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1. 发明申请

US20130079412A1 Branched 3-phenylpropionic acid derivatives and their use 有权
标题翻译：支链3-苯基丙酸衍生物及其用途
公开(公告)号：US20130079412A1
公开(公告)日：2013-03-28
申请号：US13431934
申请日：2012-03-27
申请人： Michael HAHN , Thomas LAMPE , Johannes-Peter STASCH , Karl-Heinz SCHLEMMER , Frank WUNDER , Volkhart Min-Jian LI , Eva-Maria BECKER , Friederike STOLL , Andreas KNORR , Elisabeth WOLTERING
发明人： Michael HAHN , Thomas LAMPE , Johannes-Peter STASCH , Karl-Heinz SCHLEMMER , Frank WUNDER , Volkhart Min-Jian LI , Eva-Maria BECKER , Friederike STOLL , Andreas KNORR , Elisabeth WOLTERING
IPC分类号： C07C233/55 , A61K45/06 , A61K31/196
CPC分类号： C07C231/14 , A61K9/0053 , A61K31/196 , A61K45/06 , C07C233/55 , C07C235/38 , C07C2601/02 , C07C2601/04 , C07C2601/08
摘要： The present application relates to novel 3-phenylpropionic acid derivatives which carry a branched or cyclic alkyl substituent in the 3-position, to processes for their preparation, to their use for the treatment and/or prevention of diseases and to their use for preparing medicaments for the treatment and/or prevention of diseases, in particular for the treatment and/or prevention of cardiovascular diseases.
摘要翻译：本申请涉及在3-位上带有支链或环状烷基取代基的新型3-苯基丙酸衍生物，其制备方法，其用于治疗和/或预防疾病及其用于制备药物的用途用于治疗和/或预防疾病，特别是用于治疗和/或预防心血管疾病。

2. 发明申请

US20120172448A1 Substituted 1-benzylcycloalkylcarboxylic acids and the use thereof 有权
标题翻译：取代的1-苄基环烷基羧酸及其用途
公开(公告)号：US20120172448A1
公开(公告)日：2012-07-05
申请号：US13312320
申请日：2011-12-06
申请人： Thomas LAMPE , Michael G. HAHN , Johannes-Peter STASCH , Karl-Heinz SCHLEMMER , Frank WUNDER , Sherif EL SHEIKH , Volkhart Min-Jian LI , Eva-Maria BECKER , Friederike STOLL , Andreas KNORR , Peter KOLKHOF , Elisabeth WOLTERING
发明人： Thomas LAMPE , Michael G. HAHN , Johannes-Peter STASCH , Karl-Heinz SCHLEMMER , Frank WUNDER , Sherif EL SHEIKH , Volkhart Min-Jian LI , Eva-Maria BECKER , Friederike STOLL , Andreas KNORR , Peter KOLKHOF , Elisabeth WOLTERING
IPC分类号： A61K31/196 , C07C231/14 , A61P9/04 , A61P13/12 , A61P9/12 , A61P9/00 , A61P7/02 , C07C233/55 , A61P9/10
CPC分类号： C07C231/02 , A61K31/196 , C07C233/24 , C07C233/55
摘要： The present application relates to novel substituted 1-benzylcycloalkylcarboxylic acid derivatives, to processes for their preparation, to their use for the treatment and/or prevention of diseases, and to their use for producing medicaments for the treatment and/or prevention of diseases, especially for the treatment and/or prevention of cardiovascular disorders.
摘要翻译：本申请涉及新的取代的1-苄基环烷基羧酸衍生物，其制备方法，其用于治疗和/或预防疾病的用途及其用于制备用于治疗和/或预防疾病的药物的用途，特别是用于治疗和/或预防心血管疾病。

3. 发明申请

US20110130445A1 SUBSTITUTED 3-PHENYLPROPIONIC ACIDS AND THE USE THEREOF 审中-公开
标题翻译：取代的3-苯基丙酸及其用途
公开(公告)号：US20110130445A1
公开(公告)日：2011-06-02
申请号：US12914101
申请日：2010-10-28
申请人： Thomas LAMPE , Michael HAHN , Johannes-Peter STASCH , Karl-Heinz SCHLEMMER , Frank WUNDER , Sherif EL SHEIKH , Volkhart Min-Jian LI , Eva-Maria BECKER , Friederike STOLL , Andreas KNORR
发明人： Thomas LAMPE , Michael HAHN , Johannes-Peter STASCH , Karl-Heinz SCHLEMMER , Frank WUNDER , Sherif EL SHEIKH , Volkhart Min-Jian LI , Eva-Maria BECKER , Friederike STOLL , Andreas KNORR
IPC分类号： A61K31/196 , C07C233/55 , C07D305/06 , C07C235/38 , C07C231/24 , A61K31/337 , A61P9/04 , A61P9/12 , A61P9/10 , A61P9/00 , A61P7/00
CPC分类号： C07C233/88 , A61K31/196 , A61K31/655 , C07C205/38 , C07C231/02 , C07C233/45 , C07C233/55 , C07C255/60 , C07C2601/02 , C07C2601/04 , C07C2601/08 , C07D305/06
摘要： The present application relates to novel 3-phenylpropionic acid derivatives, to processes for their preparation, to their use for the treatment and/or prevention of diseases and to their use for preparing medicaments for the treatment and/or prevention of diseases, in particular for the treatment and/or prevention of cardiovascular disorders.
摘要翻译：本申请涉及新的3-苯基丙酸衍生物，其制备方法，其用于治疗和/或预防疾病及其用于制备用于治疗和/或预防疾病的药物的用途，特别是治疗和/或预防心血管疾病。

4. 发明申请

US20110204419A1 INTEGRATED CIRCUITS INCLUDING MULTI-GATE TRANSISTORS LOCALLY INTERCONNECTED BY CONTINUOUS FIN STRUCTURE AND METHODS FOR THE FABRICATION THEREOF 有权
标题翻译：集成电路，包括通过连续熔融结构局部互连的多栅极晶体管及其制造方法
公开(公告)号：US20110204419A1
公开(公告)日：2011-08-25
申请号：US12711022
申请日：2010-02-23
申请人： Frank Scott JOHNSON , Andreas KNORR
发明人： Frank Scott JOHNSON , Andreas KNORR
IPC分类号： H01L27/08 , H01L21/70 , H01L23/52
CPC分类号： H01L27/1207 , H01L21/76895 , H01L21/823431 , H01L21/823821 , H01L21/845 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of an integrated circuit are provided. In one embodiment, the integrated circuit includes a substrate and a plurality of locally interconnected multi-gate transistors. The plurality of locally interconnected multi-gate transistors includes a continuous fin structure formed on the substrate and first and second multi-gate transistors formed on the substrate and including first and second fin segments of the continuous fin structure, respectively. The continuous fin structure electrically interconnects the first and second multi-gate transistors.
摘要翻译：提供集成电路的实施例。在一个实施例中，集成电路包括衬底和多个局部互连的多栅极晶体管。多个本地互连的多栅极晶体管包括形成在衬底上的连续鳍结构，以及形成在衬底上的第一和第二多栅极晶体管，并且分别包括连续鳍结构的第一鳍片段和第二鳍片段。连续翅片结构使第一和第二多栅极晶体管电连接。

5. 发明申请

US20120058983A1 Adenosine A1 agonists for the treatment of glaucoma and ocular hypertension 审中-公开
标题翻译：腺苷A1激动剂治疗青光眼和高眼压症
公开(公告)号：US20120058983A1
公开(公告)日：2012-03-08
申请号：US13210889
申请日：2011-08-16
申请人： Jürgen Klar , Georges VON DEGENFELD , Hans-Georg LERCHEN , Barbara Albrecht-Küpper , Andreas KNORR , Peter SANDNER , Daniel MEIBOM
发明人： Jürgen Klar , Georges VON DEGENFELD , Hans-Georg LERCHEN , Barbara Albrecht-Küpper , Andreas KNORR , Peter SANDNER , Daniel MEIBOM
IPC分类号： A61K31/4439 , A61P27/06 , A61P27/02 , C07D417/12
CPC分类号： A61K31/4439 , A61K9/0048 , A61K9/08 , A61K38/05 , A61K45/06 , C07D413/12 , C07D417/12 , C07D417/14
摘要： The present invention relates to the use of selective adenosine A1 agonists, in particular the dicyanopyridines of formula (I), for the treatment and/or prophylaxis of glaucoma and ocular hypertension as well as the their use for the production of a medicament for the treatment and/or prophylaxis of glaucoma and ocular hypertension.
摘要翻译：本发明涉及选择性腺苷A1激动剂，特别是式（I）的二氰基吡啶用于治疗和/或预防青光眼和高眼压症及其用于生产治疗药物的用途的用途和/或预防青光眼和高眼压症。

6. 发明申请

US20100308440A1 SEMICONDUCTOR STRUCTURES AND METHODS FOR STABILIZING SILICON-COMPRISING STRUCTURES ON A SILICON OXIDE LAYER OF A SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：用于稳定半导体衬底的氧化硅层上的含硅结构的半导体结构和方法
公开(公告)号：US20100308440A1
公开(公告)日：2010-12-09
申请号：US12480286
申请日：2009-06-08
申请人： Frank S. JOHNSON , Andreas KNORR
发明人： Frank S. JOHNSON , Andreas KNORR
IPC分类号： H01L21/302 , H01L29/06
CPC分类号： H01L29/66795
摘要： Methods are provided for substantially preventing and filling overetched regions in a silicon oxide layer of a semiconductor substrate. The overetched regions may be formed as a result of overetching of the silicon oxide layer during etching of an overlying silicon-comprising material layer to form a silicon-comprising structure. An etch resistant spacer may be formed after the initial or subsequent overetches. The etch resistant spacer may be formed by depositing an etch resistant material into the overetched region and etching the deposited etch resistant material to leave residual etch resistant material forming the etch resistant spacer. The etch resistant spacer may also be formed by exposing the silicon oxide layer in the overetched region to a nitrogen-supplying material to form a silicon oxynitride etch resistant spacer.
摘要翻译：提供了用于基本上防止和填充半导体衬底的氧化硅层中的过蚀刻区域的方法。在蚀刻覆盖的含硅材料层以形成含硅结构的过程中，可以形成过蚀刻区域作为氧化硅层的过蚀刻的结果。可以在初始或随后的过程之后形成耐蚀刻间隔物。耐蚀刻间隔物可以通过将抗蚀刻材料沉积到过蚀刻区域中并蚀刻沉积的耐蚀刻材料以形成形成耐蚀刻间隔物的残留耐蚀刻材料来形成。也可以通过将过蚀区域中的氧化硅层暴露于氮供给材料以形成氮氧化硅耐腐蚀间隔物来形成耐蚀刻间隔物。

7. 发明申请

US20130092957A1 SELF-ALIGNED SILICIDATION FOR REPLACEMENT GATE PROCESS 有权
标题翻译：用于替代浇注过程的自对准硅化物
公开(公告)号：US20130092957A1
公开(公告)日：2013-04-18
申请号：US13692369
申请日：2012-12-03
申请人： Indradeep SEN , Thorsten KAMMLER , Andreas KNORR , Akif SULTAN
发明人： Indradeep SEN , Thorsten KAMMLER , Andreas KNORR , Akif SULTAN
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L21/28097 , H01L21/823814 , H01L21/823864 , H01L29/4975 , H01L29/513 , H01L29/66515 , H01L29/66545 , H01L29/66606
摘要： A semiconductor device is formed with low resistivity self aligned silicide contacts with high-K/metal gates. Embodiments include postponing silicidation of a metal layer on source/drain regions in a silicon substrate until deposition of a high-K dielectric, thereby preserving the physical and morphological properties of the silicide film and improving device performance. An embodiment includes forming a replaceable gate electrode on a silicon-containing substrate, forming source/drain regions, forming a metal layer on the source/drain regions, forming an ILD over the metal layer on the substrate, removing the replaceable gate electrode, thereby forming a cavity, depositing a high-K dielectric layer in the cavity at a temperature sufficient to initiate a silicidation reaction between the metal layer and underlying silicon, and forming a metal gate electrode on the high-K dielectric layer.
摘要翻译：半导体器件形成为具有高K /金属栅极的低电阻率自对准硅化物接触。实施例包括在硅衬底的源极/漏极区域上延迟金属层的硅化物，直到沉积高K电介质，从而保持硅化物膜的物理和形态特性并提高器件性能。一个实施例包括在含硅衬底上形成可替换的栅电极，形成源极/漏极区域，在源极/漏极区域上形成金属层，在衬底上的金属层上形成ILD，去除可更换的栅电极，由此形成空腔，在足以在金属层和下层硅之间引发硅化反应的温度下在腔中沉积高K电介质层，以及在高K电介质层上形成金属栅电极。

8. 发明申请

US20110068431A1 SEMICONDUCTOR STRUCTURES AND METHODS FOR FORMING ISOLATION BETWEEN FIN STRUCTURES OF FINFET DEVICES 有权
标题翻译：半导体结构和在FINFET器件的FIN结构之间形成隔离的方法
公开(公告)号：US20110068431A1
公开(公告)日：2011-03-24
申请号：US12562849
申请日：2009-09-18
申请人： Andreas KNORR , Frank Scott JOHNSON
发明人： Andreas KNORR , Frank Scott JOHNSON
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L21/76229 , H01L29/66795 , H01L29/7851
摘要： Semiconductor structures and methods for forming isolation between fin structures formed from a bulk silicon wafer are provided. A bulk silicon wafer is provided having one or more fin structures formed therefrom. Forming of the fin structures defines isolation trenches between the one or more fin structures. Each of the fin structures has vertical sidewalls. An oxide layer is deposited in the isolation trenches and on the vertical sidewalls using HPDCVD in about a 4:1 ratio or greater. The oxide layer is isotropically etched to remove the oxide layer from the vertical sidewalls and a portion of the oxide layer from the bottom of the isolation trenches. A substantially uniformly thick isolating oxide layer is formed on the bottom of the isolation trench to isolate the one or more fin structures and substantially reduce fin height variability.
摘要翻译：提供了用于形成由体硅晶片形成的翅片结构之间的隔离的半导体结构和方法。提供具有由其形成的一个或多个翅片结构的体硅晶片。翅片结构的形成限定了一个或多个翅片结构之间的隔离沟槽。每个翅片结构都具有垂直侧壁。使用HPDCVD以大约4:1的比例或更大的比例在隔离沟槽和垂直侧壁上沉积氧化物层。氧化层被各向同性蚀刻以从隔离沟底部的垂直侧壁和氧化物层的一部分去除氧化物层。在隔离沟槽的底部上形成基本上均匀的厚的隔离氧化物层，以隔离一个或多个翅片结构，并显着降低翅片高度的可变性。

9. 发明申请

US20110045648A1 METHODS FOR FABRICATING BULK FINFET DEVICES HAVING DEEP TRENCH ISOLATION 有权
标题翻译：用于制造具有深度分离隔离的块状FINFET器件的方法
公开(公告)号：US20110045648A1
公开(公告)日：2011-02-24
申请号：US12544931
申请日：2009-08-20
申请人： Andreas KNORR , Frank Scott JOHNSON
发明人： Andreas KNORR , Frank Scott JOHNSON
IPC分类号： H01L21/336 , H01L21/762
CPC分类号： H01L21/76232 , H01L29/66795 , H01L29/7851
摘要： Methods are provided for fabricating Bulk FinFET devices having deep trench isolation. One or more deep isolation trenches are formed in a bulk silicon wafer. Mandrel-forming material is deposited overlying the bulk silicon wafer and dielectric pad layer thereon and simultaneously into the trench(es) as filler material. Mandrels are formed, overetching thereof creating a recess at the trench upper end. A conformal sidewall spacer material from which sidewall spacers are fabricated is deposited overlying the mandrels and into the recess forming a spacer overlying the filler material in the trench(es). Mandrels are removed using the spacer as an etch stop. Fin structures are formed from the bulk silicon wafer using the sidewall spacers as an etch mask. The mandrel-forming material is amorphous and/or polycrystalline silicon.
摘要翻译：提供了用于制造具有深沟槽隔离的块状FinFET器件的方法。在体硅晶片中形成一个或多个深隔离沟槽。在其上的沉积硅晶片和介质垫层上沉积形成心轴的材料，同时沉积到作为填充材料的沟槽中。形成心轴，其过蚀刻在沟槽上端形成凹部。制造侧壁间隔件的共形侧壁间隔材料沉积在芯轴上并且形成凹槽，形成覆盖沟槽中的填充材料的间隔物。使用间隔物去除心轴作为蚀刻停止。使用侧壁间隔物作为蚀刻掩模，从体硅晶片形成翅片结构。心轴形成材料是非晶和/或多晶硅。

10. 发明申请

US20100308382A1 SEMICONDUCTOR STRUCTURES AND METHODS FOR REDUCING SILICON OXIDE UNDERCUTS IN A SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：用于减少半导体衬底中的氧化硅衬底的半导体结构和方法
公开(公告)号：US20100308382A1
公开(公告)日：2010-12-09
申请号：US12480279
申请日：2009-06-08
申请人： Frank S. JOHNSON , Andreas KNORR
发明人： Frank S. JOHNSON , Andreas KNORR
IPC分类号： H01L29/78 , H01L21/302 , H01L21/28
CPC分类号： H01L29/66795 , H01L21/3065
摘要： Methods are provided for fabricating semiconductor structures with an etch resistant layer that reduces undercuts in a silicon oxide layer of a semiconductor substrate. The semiconductor substrate is provided having the silicon oxide layer. The etch resistant layer is formed which uses at least a portion of the silicon oxide layer. A silicon-comprising material layer is formed overlying the etch resistant layer. The silicon-comprising material layer has an etch rate greater than an etch rate of the etch resistant layer when subjected to an etchant. The silicon-comprising material layer is etched with an etchant to form a fin structure on the silicon oxide layer. The etch resistant layer may be formed by ion implantation, diffusing nitrogen-supplying species into the silicon oxide layer, or forming an insulator material layer overlying the silicon oxide layer.
摘要翻译：提供了用于制造具有减少半导体衬底的氧化硅层中的底切的耐蚀刻层的半导体结构的方法。提供具有氧化硅层的半导体衬底。形成耐蚀层，其使用氧化硅层的至少一部分。形成覆盖耐蚀刻层的含硅材料层。当经受蚀刻剂时，含硅材料层的蚀刻速率大于耐蚀刻层的蚀刻速率。用蚀刻剂蚀刻含硅材料层，以在氧化硅层上形成翅片结构。耐蚀刻层可以通过离子注入形成，将氮供应物质扩散到氧化硅层中，或者形成覆盖氧化硅层的绝缘体材料层。

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