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1. 发明申请

US20080023654A1 METHOD OF REDUCING TRANSIENT WAFER TEMPERATURE DURING IMPLANTATION 审中-公开
标题翻译：在植入过程中减少瞬时波浪温度的方法
公开(公告)号：US20080023654A1
公开(公告)日：2008-01-31
申请号：US11829243
申请日：2007-07-27
申请人： Michael Graf , Louis P. Wainwright
发明人： Michael Graf , Louis P. Wainwright
IPC分类号： H01J37/08
CPC分类号： H01J37/20 , H01J37/302 , H01J37/3171 , H01J2237/2001 , H01J2237/202 , H01L21/265
摘要： The present invention is directed to a method and apparatus for providing a uniform ion implantation in a single-workpiece two-dimensional mechanical scanning ion implantation system, wherein the transient temperature operating parameter is controlled based on mechanical rotation of the workpiece by a predetermined amount between two or more scans of the workpiece through a fixed ion beam. Rotating the workpiece between scans through the fixed ion beam allows for the transient temperature to decay sufficiently for more uniform ion implantation processes to proceed.
摘要翻译：本发明涉及一种用于在单工件二维机械扫描离子注入系统中提供均匀离子注入的方法和装置，其中瞬态温度操作参数基于工件的机械旋转被控制预定量在通过固定离子束对工件进行两次或多次扫描。通过固定离子束在扫描之间旋转工件允许瞬态温度衰减足够多以使离子注入过程更均匀。

2. 发明授权

US09103031B2 Method and system for growing a thin film using a gas cluster ion beam 有权
标题翻译：使用气体簇离子束生长薄膜的方法和系统
公开(公告)号：US09103031B2
公开(公告)日：2015-08-11
申请号：US12144968
申请日：2008-06-24
申请人： John J. Hautala , Michael Graf , Yan Shao , Brian S. Freer
发明人： John J. Hautala , Michael Graf , Yan Shao , Brian S. Freer
IPC分类号： C23C14/00 , C23C14/48 , H01J27/02 , C23C14/10 , C23C14/22 , H01J27/00
CPC分类号： C23C14/48 , C23C14/10 , C23C14/221 , H01J27/026 , H01J2237/0812
摘要： A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness.
摘要翻译：描述了在基板上形成薄膜的方法。该方法包括在减压环境中提供衬底，以及在减压环境中从加压气体混合物产生气体簇离子束（GCIB）。设置光束加速电位和光束剂量以实现高达约300埃的薄膜厚度，并且实现薄膜上表面的表面粗糙度小于约20埃。 GCIB根据光束加速电位被加速，并且根据光束剂量将加速的GCIB照射到基底的至少一部分上。通过这样做，薄膜在衬底的至少一部分上生长以获得厚度和表面粗糙度。

3. 发明授权

US08981322B2 Multiple nozzle gas cluster ion beam system 有权
标题翻译：多喷嘴气体簇离子束系统
公开(公告)号：US08981322B2
公开(公告)日：2015-03-17
申请号：US12428945
申请日：2009-04-23
申请人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
发明人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
IPC分类号： G21K5/04 , H01J37/08 , H01J37/317
CPC分类号： H01J37/08 , H01J37/317 , H01J2237/061 , H01J2237/0812 , H01J2237/0825 , H01J2237/0827
摘要： Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer.
摘要翻译：公开了一种用于在气体簇离子束（GCIB）系统中引入过程气体混合物或多种工艺气体混合物的多喷嘴和撇渣器组件，以及相关的操作方法，用于生长，修饰，沉积或掺杂层底物。多个喷嘴和撇浮器组件包括至少两个彼此非常接近地布置的喷嘴，其至少部分地将从其发射的气体束束至少部分地聚结成单个气体束束和/或成角度以将每个射束朝着单个交叉点收敛以形成一组的交叉气体束束，并将单个和/或相交的气体束束引导到气体分离器中。

4. 发明授权

US08097860B2 Multiple nozzle gas cluster ion beam processing system and method of operating 有权
标题翻译：多喷嘴气体离子束处理系统及其操作方法
公开(公告)号：US08097860B2
公开(公告)日：2012-01-17
申请号：US12732818
申请日：2010-03-26
申请人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
发明人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
IPC分类号： H01J37/317 , H01J49/10 , H01J27/02
CPC分类号： H01J37/08 , C23C14/221 , C23C16/513 , H01J37/305 , H01J37/317 , H01J2237/0812 , H01J2237/0822 , H01J2237/0825 , H01J2237/0827
摘要： A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB.
摘要翻译：描述了使用多个喷嘴形成和发射至少一个GCIB的气体簇离子束（GCIB）处理系统及其操作方法。 GCIB处理系统可以被配置为处理衬底，包括但不限于掺杂，生长，沉积，蚀刻，平滑化，非晶化或修饰其上的层。此外，可以操作GCIB处理系统以产生第一GCIB和第二GCIB，并且与第一GCIB和第二GCIB同时和/或顺序地照射基板。

5. 发明授权

US08089052B2 Ion source with adjustable aperture 有权
标题翻译：离子源可调光圈
公开(公告)号：US08089052B2
公开(公告)日：2012-01-03
申请号：US12423066
申请日：2009-04-14
申请人： Daniel Tieger , William DiVergilio , Edward Eisner , Michael Graf
发明人： Daniel Tieger , William DiVergilio , Edward Eisner , Michael Graf
IPC分类号： H01J49/10 , H01J37/317
CPC分类号： H01J37/08 , H01J27/024 , H01J37/09 , H01J37/3171 , H01J2237/0455 , H01J2237/061 , H01J2237/0835
摘要： An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture of desired characteristics covers an ionization region of the chamber. In one embodiment, a movable ion extraction aperture plate is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.
摘要翻译：一种离子注入机系统，包括用于产生离子流或离子束的离子源。离子源具有离子源室壳体，其至少部分地界定电离区域，以在室壳体内产生高浓度的离子浓度。具有所需特性的离子提取孔覆盖室的电离区域。在一个实施例中，可动离子提取孔板相对于壳体移动以改变离子束轮廓。一个实施例包括具有至少细长孔的孔板，并在限定不同离子束轮廓的至少第一和第二位置之间移动。耦合到孔板的驱动器或致动器使孔板在第一和第二位置之间移动。一个替代实施例具有两个限定可调节孔的移动板部分。

6. 发明申请

US20110260250A1 Method And Manufacturing Low Leakage Mosfets And FinFets 有权
标题翻译：方法和制造低漏磁和FinFets
公开(公告)号：US20110260250A1
公开(公告)日：2011-10-27
申请号：US13174398
申请日：2011-06-30
申请人： Gayle W. Miller , Volker Dudek , Michael Graf
发明人： Gayle W. Miller , Volker Dudek , Michael Graf
IPC分类号： H01L29/78
CPC分类号： H01L27/1203 , H01L21/823807 , H01L21/823878 , H01L21/84 , H01L29/045 , H01L29/66795 , H01L29/785
摘要： By aligning the primary flat of a wafer with a (100) plane rather than a (110) plane, devices can be formed with primary currents flowing along the (100) plane. In this case, the device will intersect the (111) plane at approximately 54.7 degrees. This intersect angle significantly reduces stress propagation/relief along the (111) direction and consequently reduces defects as well as leakage and parasitic currents. The leakage current reduction is a direct consequence of the change in the dislocation length required to short the source-drain junction. By using this technique the leakage current is reduced by up to two orders of magnitude for an N-channel CMOS device.
摘要翻译：通过将晶片的主平面与（100）平面而不是（110）平面对准，可以沿着（100）平面流动的初级电流形成器件。在这种情况下，设备将以大约54.7度与（111）平面相交。这个相交角度可以显着地减少沿（111）方向的应力传播/释放，从而减少缺陷以及泄漏和寄生电流。泄漏电流降低是短路源极 - 漏极结所需的位错长度变化的直接后果。通过使用这种技术，对于N沟道CMOS器件，泄漏电流降低高达两个数量级。

7. 发明申请

US20100193701A1 MULTIPLE NOZZLE GAS CLUSTER ION BEAM SYSTEM 有权
标题翻译：多喷嘴气体离子束系统
公开(公告)号：US20100193701A1
公开(公告)日：2010-08-05
申请号：US12428945
申请日：2009-04-23
申请人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
发明人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
IPC分类号： H01J27/00 , G21K1/00
CPC分类号： H01J37/08 , H01J37/317 , H01J2237/061 , H01J2237/0812 , H01J2237/0825 , H01J2237/0827
摘要： Disclosed is a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system, and associated methods of operation to grow, modify, deposit, or dope a layer upon a substrate. The multiple nozzle and skimmer assembly includes at least two nozzles arranged in mutual close proximity to at least partially coalesce the gas cluster beams emitted therefrom into a single gas cluster beam and/or angled to converge each beam toward a single intersecting point to form a set of intersecting gas cluster beams, and to direct the single and/or intersecting gas cluster beam into a gas skimmer.
摘要翻译：公开了一种用于在气体簇离子束（GCIB）系统中引入过程气体混合物或多种工艺气体混合物的多喷嘴和撇渣器组件，以及相关的操作方法，用于生长，修饰，沉积或掺杂层底物。多个喷嘴和撇浮器组件包括至少两个彼此非常接近地布置的喷嘴，其至少部分地将从其发射的气体束束至少部分地聚结成单个气体束束和/或成角度以将每个射束朝着单个交叉点收敛以形成一组的交叉气体束束，并将单个和/或相交的气体束束引导到气体分离器中。

8. 发明申请

US20100193472A1 MULTIPLE NOZZLE GAS CLUSTER ION BEAM PROCESSING SYSTEM AND METHOD OF OPERATING 有权
标题翻译：多喷嘴气体离子束加工系统及其操作方法
公开(公告)号：US20100193472A1
公开(公告)日：2010-08-05
申请号：US12732818
申请日：2010-03-26
申请人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
发明人： Martin D. Tabat , Matthew C. Gwinn , Robert K. Becker , Avrum Freytsis , Michael Graf
IPC分类号： H01J37/317 , H01J37/02 , H01J37/305 , C23F1/02 , C23C14/48
CPC分类号： H01J37/08 , C23C14/221 , C23C16/513 , H01J37/305 , H01J37/317 , H01J2237/0812 , H01J2237/0822 , H01J2237/0825 , H01J2237/0827
摘要： A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB.
摘要翻译：描述了使用多个喷嘴形成和发射至少一个GCIB的气体簇离子束（GCIB）处理系统及其操作方法。 GCIB处理系统可以被配置为处理衬底，包括但不限于掺杂，生长，沉积，蚀刻，平滑化，非晶化或修饰其上的层。此外，可以操作GCIB处理系统以产生第一GCIB和第二GCIB，并且与第一GCIB和第二GCIB同时和/或顺序地照射基板。

9. 发明申请

US20090266997A1 ION SOURCE WITH ADJUSTABLE APERTURE 有权
标题翻译：离子源与可调节的孔
公开(公告)号：US20090266997A1
公开(公告)日：2009-10-29
申请号：US12423066
申请日：2009-04-14
申请人： Daniel Tieger , William DiVergilio , Edward Eisner , Michael Graf
发明人： Daniel Tieger , William DiVergilio , Edward Eisner , Michael Graf
IPC分类号： H01J3/14 , H01J27/00
CPC分类号： H01J37/08 , H01J27/024 , H01J37/09 , H01J37/3171 , H01J2237/0455 , H01J2237/061 , H01J2237/0835
摘要： An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture of desired characteristics covers an ionization region of the chamber. In one embodiment, a movable ion extraction aperture plate is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.
摘要翻译：一种离子注入机系统，包括用于产生离子流或离子束的离子源。离子源具有离子源室壳体，其至少部分地界定电离区域，以在室壳体内产生高浓度的离子浓度。具有所需特性的离子提取孔覆盖室的电离区域。在一个实施例中，可动离子提取孔板相对于壳体移动以改变离子束轮廓。一个实施例包括具有至少细长孔的孔板，并在限定不同离子束轮廓的至少第一和第二位置之间移动。耦合到孔板的驱动器或致动器使孔板在第一和第二位置之间移动。一个替代实施例具有两个限定可调节孔的移动板部分。

10. 发明授权

US07521756B2 DMOS transistor with optimized periphery structure 有权
标题翻译：具有优化外围结构的DMOS晶体管
公开(公告)号：US07521756B2
公开(公告)日：2009-04-21
申请号：US11636668
申请日：2006-12-11
申请人： Franz Dietz , Michael Graf , Stefan Schwantes
发明人： Franz Dietz , Michael Graf , Stefan Schwantes
IPC分类号： H01L29/76
CPC分类号： H01L29/0696 , H01L29/0886 , H01L29/42368 , H01L29/7816 , H01L29/7835
摘要： A lateral DMOS transistor is disclosed that includes a first region of a first conductivity type, which is surrounded on the sides by a second region of a second conductivity type, whereby a boundary line between both regions has opposite straight sections and curved sections linking the straight sections, and with a first dielectric structure, which serves as a field region and is embedded in the first region and surrounds a subregion of the first region. Whereby the first distance between the first dielectric structure and the boundary line is greater along the straight sections than along the curved sections.
摘要翻译：公开了一种横向DMOS晶体管，其包括第一导电类型的第一区域，其在侧面被第二导电类型的第二区域包围，由此两个区域之间的边界线具有相对的直线部分和连接直线的弯曲部分并且具有用作场区域并被嵌入在第一区域中并且围绕第一区域的子区域的第一电介质结构。由此，第一电介质结构和边界线之间的第一距离沿着直线部分比沿着弯曲部分更大。

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