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    • 1. 发明申请
    • SYSTEM AND METHOD FOR MEASURING AND ANALYZING LITHOGRAPHIC PARAMETERS AND DETERMINING OPTIMAL PROCESS CORRECTIONS
    • 用于测量和分析光刻参数的系统和方法以及确定最佳过程校正
    • US20070035712A1
    • 2007-02-15
    • US11462022
    • 2006-08-02
    • Michael GassnerStefan HunscheYu CaoJun YeMoshe Preil
    • Michael GassnerStefan HunscheYu CaoJun YeMoshe Preil
    • G03B27/52
    • G03F7/70666G03F7/70641
    • A method of using an in-situ aerial image sensor array is disclosed to separate and remove the focal plane variations caused by the image sensor array non-flatness and/or by the exposure tool by collecting sensor image data at various nominal focal planes and by determining best focus at each sampling location by analysis of the through-focus data. In various embodiments, the method provides accurate image data at best focus anywhere in the exposure field, image data covering an exposure-dose based process window area, and a map of effective focal plane distortions. The focus map can be separated into contributions from the exposure tool and contributions due to topography of the image sensor array by suitable calibration or self-calibration procedures. The basic method enables a wide range of applications, including for example qualification testing, process monitoring, and process control by deriving optimum process corrections from analysis of the image sensor data.
    • 公开了一种使用原位空间图像传感器阵列的方法,以分离和去除由图像传感器阵列非平坦度引起的焦平面变化和/或通过曝光工具通过在各种标称焦平面处收集传感器图像数据,并且通过 通过分析焦点数据确定每个采样位置的最佳焦点。 在各种实施例中,该方法在曝光区域的任何地方提供最佳焦点上的精确图像数据,覆盖基于曝光剂量的过程窗口区域的图像数据和有效焦平面失真的映射。 焦点图可以通过适当的校准或自校准程序分为曝光工具的贡献和由于图像传感器阵列的形貌造成的贡献。 基本方法可以通过从图像传感器数据分析中得出最佳的过程校正,实现广泛的应用,包括例如鉴定测试,过程监控和过程控制。
    • 2. 发明授权
    • System and method for measuring and analyzing lithographic parameters and determining optimal process corrections
    • 用于测量和分析光刻参数并确定最佳过程校正的系统和方法
    • US07749666B2
    • 2010-07-06
    • US11462022
    • 2006-08-02
    • Michael J. GassnerStefan HunscheYu CaoJun YeMoshe E. Preil
    • Michael J. GassnerStefan HunscheYu CaoJun YeMoshe E. Preil
    • G03C5/00G01B9/00G01B9/08G01B11/00G01N21/00
    • G03F7/70666G03F7/70641
    • A method of using an in-situ aerial image sensor array is disclosed to separate and remove the focal plane variations caused by the image sensor array non-flatness and/or by the exposure tool by collecting sensor image data at various nominal focal planes and by determining best focus at each sampling location by analysis of the through-focus data. In various embodiments, the method provides accurate image data at best focus anywhere in the exposure field, image data covering an exposure-dose based process window area, and a map of effective focal plane distortions. The focus map can be separated into contributions from the exposure tool and contributions due to topography of the image sensor array by suitable calibration or self-calibration procedures. The basic method enables a wide range of applications, including for example qualification testing, process monitoring, and process control by deriving optimum process corrections from analysis of the image sensor data.
    • 公开了一种使用原位空间图像传感器阵列的方法,以分离和去除由图像传感器阵列非平坦度引起的焦平面变化和/或通过曝光工具通过在各种标称焦平面处收集传感器图像数据,并且通过 通过分析焦点数据确定每个采样位置的最佳焦点。 在各种实施例中,该方法在曝光区域的任何地方提供最佳焦点上的精确图像数据,覆盖基于曝光剂量的过程窗口区域的图像数据和有效焦平面失真的映射。 焦点图可以通过适当的校准或自校准程序分为曝光工具的贡献和由于图像传感器阵列的形貌造成的贡献。 基本方法可以通过从图像传感器数据分析中得出最佳的过程校正,实现广泛的应用,包括例如鉴定测试,过程监控和过程控制。
    • 4. 发明授权
    • Method for lithography model calibration
    • 光刻模型校准方法
    • US07488933B2
    • 2009-02-10
    • US11461929
    • 2006-08-02
    • Jun YeYu CaoGuangqing ChenStefan Hunsche
    • Jun YeYu CaoGuangqing ChenStefan Hunsche
    • G12B13/00
    • G03F7/70516G03F7/705
    • A method for separately calibrating an optical model and a resist model of lithography process using information derived from in-situ aerial image measurements to improve the calibration of both the optical model and the resist model components of the lithography simulation model. Aerial images produced by an exposure tool are measured using an image sensor array loaded into the exposure tool. Multiple embodiments of measuring aerial image information and using the measured aerial image information to calibrate the optical model and the resist model are disclosed. The method of the invention creates more accurate and separable optical and resist models, leading to better predictability of the pattern transfer process from mask to wafer, more accurate verification of circuit patterns and how they will actually print in production, and more accurate model-based process control in the wafer fabrication facility.
    • 使用从原位空间图像测量得到的信息分别校准光学模型和光刻工艺的抗蚀剂模型的方法,以改进光刻模拟和光刻模拟模型的抗蚀剂模型组件的校准。 使用装载到曝光工具中的图像传感器阵列来测量由曝光工具产生的空中影像。 公开了测量空间图像信息和使用所测量的空间图像信息来校准光学模型和抗蚀剂模型的多个实施例。 本发明的方法创建更精确和可分离的光学和抗蚀剂模型,导致从掩模到晶片的图案转移过程更好的可预测性,电路图案的更准确的验证以及它们将如何在生产中实际打印,以及更准确的基于模型 晶圆制造设备中的过程控制。
    • 5. 发明申请
    • METHOD FOR LITHOGRAPHY MODEL CALIBRATION
    • 算法模型校准方法
    • US20070032896A1
    • 2007-02-08
    • US11461929
    • 2006-08-02
    • Jun YeYu CaoGuangqing ChenStefan Hunsche
    • Jun YeYu CaoGuangqing ChenStefan Hunsche
    • G06F19/00
    • G03F7/70516G03F7/705
    • A method for separately calibrating an optical model and a resist model of lithography process using information derived from in-situ aerial image measurements to improve the calibration of both the optical model and the resist model components of the lithography simulation model. Aerial images produced by an exposure tool are measured using an image sensor array loaded into the exposure tool. Multiple embodiments of measuring aerial image information and using the measured aerial image information to calibrate the optical model and the resist model are disclosed. The method of the invention creates more accurate and separable optical and resist models, leading to better predictability of the pattern transfer process from mask to wafer, more accurate verification of circuit patterns and how they will actually print in production, and more accurate model-based process control in the wafer fabrication facility.
    • 使用从原位空间图像测量得到的信息分别校准光学模型和光刻工艺的抗蚀剂模型的方法,以改进光刻模拟和光刻模拟模型的抗蚀剂模型组件的校准。 使用装载到曝光工具中的图像传感器阵列来测量由曝光工具产生的空中影像。 公开了测量空间图像信息和使用所测量的空间图像信息来校准光学模型和抗蚀剂模型的多个实施例。 本发明的方法创建更精确和可分离的光学和抗蚀剂模型,导致从掩模到晶片的图案转移过程更好的可预测性,电路图案的更准确的验证以及它们将如何在生产中实际打印,以及更准确的基于模型 晶圆制造设备中的过程控制。
    • 6. 发明授权
    • Method for process window optimized optical proximity correction
    • 过程窗口优化光学邻近校正方法
    • US08413081B2
    • 2013-04-02
    • US12709373
    • 2010-02-19
    • Jun YeJiangwei LiStefan Hunsche
    • Jun YeJiangwei LiStefan Hunsche
    • G06F17/50
    • G06F17/50G03F1/144G03F1/36
    • One embodiment of a method for process window optimized optical proximity correction includes applying optical proximity corrections to a design layout, simulating a lithography process using the post-OPC layout and models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images. A weighted average error in the critical dimension or other contour metric for each edge segment of each feature in the design layout is determined, wherein the weighted average error is an offset between the contour metric at each process condition and the contour metric at nominal condition averaged over the plurality of process conditions. A retarget value for the contour metric for each edge segment is determined using the weighted average error and applied to the design layout prior to applying further optical proximity corrections.
    • 用于处理窗口优化的光学邻近校正的方法的一个实施例包括将光学邻近校正应用于设计布局,使用后OPC布局模拟光刻处理和在多个工艺条件下的光刻工艺的模型,以产生多个模拟 抵抗图像。 确定设计布局中每个特征的每个边缘段的关键尺寸或其他轮廓度量的加权平均误差,其中加权平均误差是在每个处理条件下的轮廓度量与标称条件下的轮廓度量之间的偏移平均 在多个工艺条件下。 使用加权平均误差确定每个边缘段的轮廓度量的重定向值,并在应用进一步的光学邻近校正之前应用于设计布局。
    • 9. 发明授权
    • Method for selecting and optimizing exposure tool using an individual mask error model
    • 使用单独的掩模误差模型选择和优化曝光工具的方法
    • US07617477B2
    • 2009-11-10
    • US11530409
    • 2006-09-08
    • Jun YeStefan Hunsche
    • Jun YeStefan Hunsche
    • G06F17/50
    • G06F17/5081G03F1/36G03F1/84G03F7/70441G03F7/705
    • Methods are disclosed for selecting and optimizing an exposure tool using an individual mask error model. In one embodiment, a method includes selecting a model of a lithography process including an optical model of an exposure tool and a resist model, creating an individual mask error model representing a mask manufactured using mask layout data, simulating the lithography process using the model of the lithography process and the individual mask error model to produce simulated patterns, determining differences between the simulated patterns and a design target, and optimizing settings of the exposure tool based on the differences between the simulated patterns and the design target.
    • 公开了使用单独的掩模误差模型来选择和优化曝光工具的方法。 在一个实施例中,一种方法包括选择包括曝光工具和抗蚀剂模型的光学模型的光刻工艺的模型,创建表示使用掩模布局数据制造的掩模的单独掩模误差模型,使用模型 光刻过程和单个掩模误差模型,以产生模拟图案,确定模拟图案与设计目标之间的差异,并且基于模拟图案和设计目标之间的差异优化曝光工具的设置。
    • 10. 发明申请
    • METHOD FOR PROCESS WINDOW OPTIMIZED OPTICAL PROXIMITY CORRECTION
    • 用于处理窗口优化光学近似校正的方法
    • US20100180251A1
    • 2010-07-15
    • US12709373
    • 2010-02-19
    • Jun YeJiangwei LiStefan Hunsche
    • Jun YeJiangwei LiStefan Hunsche
    • G06F17/50
    • G06F17/50G03F1/144G03F1/36
    • One embodiment of a method for process window optimized optical proximity correction includes applying optical proximity corrections to a design layout, simulating a lithography process using the post-OPC layout and models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images. A weighted average error in the critical dimension or other contour metric for each edge segment of each feature in the design layout is determined, wherein the weighted average error is an offset between the contour metric at each process condition and the contour metric at nominal condition averaged over the plurality of process conditions. A retarget value for the contour metric for each edge segment is determined using the weighted average error and applied to the design layout prior to applying further optical proximity corrections.
    • 用于处理窗口优化的光学邻近校正的方法的一个实施例包括将光学邻近校正应用于设计布局,使用后OPC布局模拟光刻处理和在多个工艺条件下的光刻工艺的模型,以产生多个模拟 抵抗图像。 确定设计布局中每个特征的每个边缘段的临界尺寸或其他轮廓度量的加权平均误差,其中加权平均误差是在每个处理条件下的轮廓度量与标称条件下的轮廓度量之间的偏移平均 在多个工艺条件下。 使用加权平均误差确定每个边缘段的轮廓度量的重定向值,并在应用进一步的光学邻近校正之前应用于设计布局。