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1. 发明授权

US07079301B2 MEMS device and method of forming MEMS device 有权
标题翻译： MEMS器件和MEMS器件的形成方法
公开(公告)号：US07079301B2
公开(公告)日：2006-07-18
申请号：US11092410
申请日：2005-03-28
申请人： Michael G. Monroe , Eric L. Nikkel , Michele K. Szepesi , Stephen J. Potochnik , Richard P. Tomasco
发明人： Michael G. Monroe , Eric L. Nikkel , Michele K. Szepesi , Stephen J. Potochnik , Richard P. Tomasco
IPC分类号： G02B26/00
CPC分类号： B81C1/00174 , B81B2201/042 , G02B26/0841
摘要： A method of forming a MEMS device includes providing a substructure including a base material and at least one conductive layer formed on a side of the base material, forming a dielectric layer over the at least one conductive layer of the substructure, defining an actuating area for the MEMS device on the dielectric layer, including depositing a conductive material on the dielectric layer and communicating the conductive material with the at least one conductive layer of the substructure through the dielectric layer, forming a sacrificial layer over the conductive material and the dielectric layer, including depositing silicon over the conductive material and the dielectric layer, and forming a substantially planar surface of the silicon, forming an actuating element over the sacrificial layer within the actuating area, including communicating the actuating element with the conductive material of the actuating area through the sacrificial layer, and substantially removing the sacrificial layer between the actuating element and the dielectric layer.
摘要翻译：一种形成MEMS器件的方法包括提供一种子结构，其包括基底材料和形成在该基底材料一侧上的至少一个导电层，在该子结构的该至少一个导电层上形成介电层，该电介质层限定用于所述MEMS器件包括在所述电介质层上沉积导电材料，并且通过所述电介质层将所述导电材料与所述子结构的所述至少一个导电层连接，在所述导电材料和所述电介质层上形成牺牲层，包括在导电材料和电介质层上沉积硅，以及形成硅的基本平坦的表面，在致动区域内的牺牲层上形成致动元件，包括使致动元件与致动区域的导电材料通过牺牲层，并且基本上除去牺牲物在致动元件和电介质层之间。

2. 发明授权

US06914709B2 MEMS device and method of forming MEMS device 失效
标题翻译： MEMS器件和MEMS器件的形成方法
公开(公告)号：US06914709B2
公开(公告)日：2005-07-05
申请号：US10677825
申请日：2003-10-02
申请人： Michael G. Monroe , Eric L. Nikkel , Michele K. Szepesi , Stephen J. Potochnik , Richard P. Tomasco
发明人： Michael G. Monroe , Eric L. Nikkel , Michele K. Szepesi , Stephen J. Potochnik , Richard P. Tomasco
IPC分类号： B81B7/00 , G02B26/00 , G02B26/08 , H01L21/20
CPC分类号： B81C1/00174 , B81B2201/042 , G02B26/0841
摘要： A method of forming a MEMS device includes providing a substructure including a base material and at least one conductive layer formed on a side of the base material, forming a dielectric layer over the at least one conductive layer of the substructure, defining an actuating area for the MEMS device on the dielectric layer, including depositing a conductive material on the dielectric layer and communicating the conductive material with the at least one conductive layer of the substructure through the dielectric layer, forming a sacrificial layer over the conductive material and the dielectric layer, including depositing silicon over the conductive material and the dielectric layer, and forming a substantially planar surface of the silicon, forming an actuating element over the sacrificial layer within the actuating area, including communicating the actuating element with the conductive material of the actuating area through the sacrificial layer, and substantially removing the sacrificial layer between the actuating element and the dielectric layer.
摘要翻译：一种形成MEMS器件的方法包括提供一种子结构，其包括基底材料和形成在该基底材料一侧上的至少一个导电层，在该子结构的该至少一个导电层上形成介电层，该电介质层限定用于所述MEMS器件包括在所述电介质层上沉积导电材料，并且通过所述电介质层将所述导电材料与所述子结构的所述至少一个导电层连接，在所述导电材料和所述电介质层上形成牺牲层，包括在导电材料和电介质层上沉积硅，以及形成硅的基本平坦的表面，在致动区域内的牺牲层上形成致动元件，包括使致动元件与致动区域的导电材料通过牺牲层，并且基本上除去牺牲物在致动元件和电介质层之间。

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