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    • 2. 发明授权
    • Manufacture of an infra-red detector element, and detection elements so
manufactured
    • 制造红外探测器元件和如此制造的检测元件
    • US4321615A
    • 1982-03-23
    • US183524
    • 1980-09-02
    • Maurice V. BlackmanMichael D. Jenner
    • Maurice V. BlackmanMichael D. Jenner
    • H01L27/14G01J1/02H01L21/302H01L21/3065H01L21/465H01L21/467H01L27/144H01L31/0224H01L31/0264H01L31/0296H01L31/0352H01L31/036H01L31/09H01L31/18H01L31/02C23C15/00
    • H01L21/467H01L21/465H01L27/1446H01L31/0224H01L31/02966H01L31/035281H01L31/036H01L31/09H01L31/1832Y02E10/50
    • The manufacture of an infra-red radiation detector element (51). A body of infra-red sensitive material (e.g. cadmium mercury telluride) secured to a substrate (22) is subjected to ion-etching to remove part of the material over the whole thickness of the element (51) at areas (56) between the contact areas of the element electrodes (35 and 36b) so as to define a current path between these electrodes (35 and 36b) which extends through the remaining material and is longer than the distance along a straight line between the electrodes (35 and 36b). This longer current path increases the charge-carrier transit time and resistance between the electrodes (35 and 36b) so that the responsivity of the detector element (51) can be improved while still producing a compact element structure because of the advantages of defining the current path by ion-etching. This etch-removal may involve forming parallel slots (56) which extend from opposite side walls of the element (51) to define a meandering current path, and may additionally be used to form a mutual separation (55) between portions (51 and 52) of the body each of which is to form a separate infra-red detector element of an array formed on the substrate (22).
    • 红外辐射探测器元件(51)的制造。 固定在基板(22)上的红外敏感材料体(例如碲化汞镉)体经受离子蚀刻,以在元件(51)的整个厚度之间的区域(56)上去除部分材料 元件电极(35和36b)的接触区域,以便限定这些电极(35和36b)之间的电流通路,其延伸穿过剩余的材料并且比沿着电极(35和36b)之间的直线的距离长, 。 这种较长的电流路径增加了电极(35和36b)之间的电荷载流子传播时间和电阻,从而可以改善检测器元件(51)的响应性,同时仍然产生紧凑的元件结构,因为定义电流 离子蚀刻路径。 该蚀刻去除可以包括形成从元件(51)的相对侧壁延伸以形成弯曲电流路径的平行狭槽(56),并且还可以用于在部分(51和52)之间形成相互间隔(55) ),其每一个都形成在衬底(22)上形成的阵列的单独的红外检测器元件。