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1. 发明授权

US08809867B2 Dislocation reduction in non-polar III-nitride thin films 有权
标题翻译：非极性III族氮化物薄膜的位错减少
公开(公告)号：US08809867B2
公开(公告)日：2014-08-19
申请号：US11852908
申请日：2007-09-10
申请人： Michael D. Craven , Steven P. Denbaars , James S. Speck , Shuji Nakamura
发明人： Michael D. Craven , Steven P. Denbaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L29/15 , H01L21/20 , H01L21/02
CPC分类号： H01L21/0237 , C30B25/02 , C30B25/04 , C30B25/105 , C30B25/18 , C30B29/403 , C30B29/406 , C30B29/605 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Lateral epitaxial overgrowth of non-polar III-nitride seed layers reduces threading dislocations in the non-polar III-nitride thin films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the non-polar III-nitride films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.
摘要翻译：非极性III族氮化物种子层的横向外延生长减少了非极性III族氮化物薄膜中的穿透位错。首先，将薄的图案化电介质掩模施加到种子层。其次，进行选择性外延再生长以实现基于图案化掩模的横向过度生长。在再生长时，非极性III族氮化物膜在垂直于垂直生长方向的方向上横向过度生长掩模之前，首先垂直于介电掩模中的开口生长。通过（1）掩模阻止位错垂直进入生长膜的扩散，以及（2）通过从垂直向侧向生长的过渡的位错弯曲，使得穿越位错在过度生长的区域中减少。

2. 发明授权

US07982208B2 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices 有权
标题翻译：非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件
公开(公告)号：US07982208B2
公开(公告)日：2011-07-19
申请号：US11472033
申请日：2006-06-21
申请人： Michael D. Craven , Stacia Keller , Steven P. Denbaars , Tal Margalith , James Stephen Speck , Shuji Nakamura , Umesh K. Mishra
发明人： Michael D. Craven , Stacia Keller , Steven P. Denbaars , Tal Margalith , James Stephen Speck , Shuji Nakamura , Umesh K. Mishra
IPC分类号： H01L31/00
CPC分类号： C30B29/403 , C30B25/02 , C30B25/04 , C30B25/105 , C30B25/18 , C30B29/406 , C30B29/605 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (1 102) sapphire substrate using MOCVD. These non-polar (11 20) a-plane GaN layers comprise templates for producing non-polar (Al, B, In, Ga)N quantum well and heterostructure materials and devices.
摘要翻译：一种形成非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件的方法。使用MOCVD在非平面（1120）蓝宝石衬底上生长非极性（11 20）a面GaN层。这些非极性（11 20）a面GaN层包括用于产生非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件的模板。

3. 发明授权

US07091514B2 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices 有权
标题翻译：非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件
公开(公告)号：US07091514B2
公开(公告)日：2006-08-15
申请号：US10413690
申请日：2003-04-15
申请人： Michael D. Craven , Stacia Keller , Steven P. Denbaars , Tal Margalith , James Stephen Speck , Shuji Nakamura , Umesh K. Mishra
发明人： Michael D. Craven , Stacia Keller , Steven P. Denbaars , Tal Margalith , James Stephen Speck , Shuji Nakamura , Umesh K. Mishra
IPC分类号： H01L31/072
CPC分类号： C30B29/403 , C30B25/02 , C30B25/04 , C30B25/105 , C30B25/18 , C30B29/406 , C30B29/605 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11{overscore (2)}0) a-plane GaN layers are grown on an r-plane (1{overscore (1)}02) sapphire substrate using MOCVD. These non-polar (11{overscore (2)}0) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.
摘要翻译：一种形成非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件的方法。非极性（11（超（20））a面GaN层使用MOCVD在r平面（1（超芯（10 2））蓝宝石衬底上生长，这些非极性（11（超核（2O）平面GaN层包括用于产生非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件的模板。

4. 发明授权

US08691671B2 Planar nonpolar group-III nitride films grown on miscut substrates 有权
标题翻译：平面非极性III族氮化物薄膜生长在不同的基板上
公开(公告)号：US08691671B2
公开(公告)日：2014-04-08
申请号：US13427590
申请日：2012-03-22
申请人： Asako Hirai , Zhongyuan Jia , Makoto Saito , Hisashi Yamada , Kenji Iso , Steven P. Denbaars , Shuji Nakamura , James S. Speck
发明人： Asako Hirai , Zhongyuan Jia , Makoto Saito , Hisashi Yamada , Kenji Iso , Steven P. Denbaars , Shuji Nakamura , James S. Speck
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B23/025 , C30B23/066 , C30B25/18 , C30B25/186 , C30B25/20 , C30B29/403 , C30B29/60 , H01L21/0237 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02529 , H01L21/0254 , H01L21/02565 , H01L21/02609 , H01L21/02617 , H01L21/02636 , H01L29/04 , H01L29/1608 , H01L29/2003 , H01L29/26 , H01L31/03044 , H01L31/036 , H01L31/1856 , H01L33/0075 , H01L33/16 , H01L33/32 , H01S5/34333 , Y10T428/24612
摘要： A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an α-axis direction comprising a 0.15° or greater miscut angle towards the α-axis direction and a less than 30° miscut angle towards the α-axis direction.
摘要翻译：提供了为了抑制表面波动而在衬底的错误角度上生长的非极性III族氮化物膜。膜的表面形态通过朝向朝向α轴方向具有0.15°以上的误差角和朝向α轴方向的小于30°的倾斜角度的朝向α轴方向的误差角度而改善。

5. 发明授权

US08853669B2 Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning 有权
标题翻译：通过衬底和外延层图案化限制III族氮化物异质结构中的应变松弛
公开(公告)号：US08853669B2
公开(公告)日：2014-10-07
申请号：US13281775
申请日：2011-10-26
申请人： James S. Speck , Anurag Tyagi , Steven P. Denbaars , Shuji Nakamura
发明人： James S. Speck , Anurag Tyagi , Steven P. Denbaars , Shuji Nakamura
IPC分类号： H01L33/16 , H01L33/12 , H01L29/04 , H01L33/00 , B82Y20/00 , H01S5/343 , H01S5/32 , H01L29/778 , H01L29/20
CPC分类号： H01L29/045 , B82Y20/00 , H01L29/2003 , H01L29/7787 , H01L33/0075 , H01L33/16 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A method of fabricating a substrate for a semipolar III-nitride device, comprising patterning and forming one or more mesas on a surface of a semipolar III-nitride substrate or epilayer, thereby forming a patterned surface of the semipolar III-nitride substrate or epilayer including each of the mesas with a dimension l along a direction of a threading dislocation glide, wherein the threading dislocation glide results from a III-nitride layer deposited heteroepitaxially and coherently on a non-patterned surface of the substrate or epilayer.
摘要翻译：一种制造用于半极性III族氮化物器件的衬底的方法，包括在半极性III族氮化物衬底或外延层的表面上图案化和形成一个或多个台面，从而形成半极性III族氮化物衬底或外延层的图案化表面，包括沿着穿透位错滑移的方向具有尺寸l的每个台面，其中穿透位错滑动来自在基底或外延层的非图案化表面上异质外延和相干沉积的III族氮化物层。

6. 发明申请

US20110300051A1 GROUP-III NITRIDE MONOCRYSTAL WITH IMPROVED PURITY AND METHOD OF PRODUCING THE SAME 审中-公开
标题翻译：具有改进的纯度的III族氮化物单晶及其生产方法
公开(公告)号：US20110300051A1
公开(公告)日：2011-12-08
申请号：US13128079
申请日：2009-11-04
申请人： Derrick S. Kamber , Siddha Pimputkar , Makoto Saito , Steven P. Denbaars , James S. Speck , Shuji Nakamura
发明人： Derrick S. Kamber , Siddha Pimputkar , Makoto Saito , Steven P. Denbaars , James S. Speck , Shuji Nakamura
IPC分类号： C01B21/06 , C30B7/10
CPC分类号： H01L29/2003 , C30B7/105 , C30B29/403 , C30B29/406 , H01L21/0254
摘要： A method to improve the crystal purity of a group-I11 nitride crystal grown in an ammonothermal growth system by removing any undesired material (i.e., impurities) from within the system prior to, in-between, or after the growth steps for the group-I11 nitride crystal. Impurities are removed from the ammonothermal growth system by first bringing the impurities into solution and then removing part or all of the solution from the growth system. The result is a high purity group-I11 nitride crystal grown in the ammonothermal growth system.
摘要翻译：一种提高生长在氨热生长系统中的第11族氮化物晶体的晶体纯度的方法，该方法通过在组 - 生长系统的生长步骤之前，之间或之后从体系内除去任何不需要的物质（即，杂质） I11氮化物晶体。通过首先将杂质引入溶液中，然后从生长系统中除去部分或全部溶液，将杂质从氨热生长系统中除去。结果是在氨热生长系统中生长的高纯度的-11族氮化物晶体。

7. 发明申请

US20080128737A1 HORIZONTAL EMITTING, VERTICAL EMITTING, BEAM SHAPED, DISTRIBUTED FEEDBACK (DFB) LASERS BY GROWTH OVER A PATTERNED SUBSTRATE 有权
标题翻译：水平发射，垂直发射，光束形状，分布式反馈（DFB）激光通过形成图案的基板
公开(公告)号：US20080128737A1
公开(公告)日：2008-06-05
申请号：US12030697
申请日：2008-02-13
申请人： Claude C.A. Weisbuch , Aurelien J.F. David , James S. Speck , Steven P. Denbaars
发明人： Claude C.A. Weisbuch , Aurelien J.F. David , James S. Speck , Steven P. Denbaars
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01S5/12 , H01S5/1021 , H01S5/105 , H01S5/187 , H01S5/32341 , H01S2304/12
摘要： A structure using integrated optical elements is comprised of a substrate, a buffer layer grown on the substrate, one or more patterned layers formed on the buffer layer and one or more active layers formed on or between the patterned layers, for instance by Lateral Epitaxial Overgrowth (LEO), and including one or more light emitting species. The patterned layer comprises a mask (made of insulating, semiconducting or metallic material) and material filling holes in the mask. The patterned layer, due to a large index difference with the active layer and/or variations of a refractive index between the mask and materials filling holes in the mask, acts as an optical confinement layer, a mirror, a diffraction grating, a wavelength selective element, a beam shaping element or a beam directing element.
摘要翻译：使用集成光学元件的结构包括衬底，在衬底上生长的缓冲层，形成在缓冲层上的一个或多个图案化层和形成在图案化层之间或之间的一个或多个有源层，例如通过横向外延生长（LEO），并且包括一种或多种发光物质。图案层包括掩模（由绝缘，半导体或金属材料制成）和掩模中的材料填充孔。由于与有源层的大的折射率差异和/或掩模和掩模中填充孔的材料之间的折射率的变化，图案化层用作光学限制层，反射镜，衍射光栅，波长选择性元件，光束成形元件或光束引导元件。

8. 发明授权

US06900070B2 Dislocation reduction in non-polar gallium nitride thin films 有权
标题翻译：非极性氮化镓薄膜的位错减少
公开(公告)号：US06900070B2
公开(公告)日：2005-05-31
申请号：US10413913
申请日：2003-04-15
申请人： Michael D. Craven , Steven P. Denbaars , James Stephen Speck
发明人： Michael D. Craven , Steven P. Denbaars , James Stephen Speck
IPC分类号： C23C16/04 , C30B25/02 , C30B25/04 , C30B25/10 , C30B25/18 , C30B29/38 , C30B29/40 , C30B29/60 , H01L21/205 , H01S5/343 , H01L21/00
CPC分类号： C30B29/403 , C30B25/02 , C30B25/04 , C30B25/105 , C30B25/18 , C30B29/406 , C30B29/605 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： Lateral epitaxial overgrowth of non-polar (11{overscore (2)}0) a-plane GaN seed layers reduces threading dislocations in the GaN films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the GaN films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.
摘要翻译：非极性（11（超（20））a面GaN种子层的横向外延生长减少了GaN膜中的穿透位错首先，将薄的图案化介电掩模施加到种子层;其次，进行选择性外延再生长为了实现基于图案化掩模的横向过度生长，在再生长时，GaN膜最初垂直于介电掩模中的开口生长，然后在垂直于垂直生长方向的方向上横向过度生长掩模之前，穿越位错通过（ 1）掩模阻止位错的垂直传播到生长膜中，和（2）通过从垂直向侧向生长的过渡的位错的弯曲。

9. 发明授权

US5650198A Defect reduction in the growth of group III nitrides 失效
标题翻译： III族氮化物生长的缺陷减少
公开(公告)号：US5650198A
公开(公告)日：1997-07-22
申请号：US516794
申请日：1995-08-18
申请人： Steven P. Denbaars , James S. Speck
发明人： Steven P. Denbaars , James S. Speck
IPC分类号： C23C16/30 , C30B25/02 , H01L33/00 , C23C16/34
CPC分类号： C30B25/02 , C23C16/303 , C30B29/403 , C30B29/406 , H01L33/007
摘要： The present invention relates to an improved method to produce Group III nitride thin film having a lower defect density, which method comprises:(a) combining under metalorganic chemical vapor deposition (MOCVD) conditions at least one Group III metalorganic compound with ammonia, hydrazine, nitrogen-hydrogen, or combinations thereof in a molar ratio of between about 1/10000 and 2/1 of metalorganic to the ammonia, hydrazine, nitrogen-hydrogen, or combinations thereof, at a low pressure of about 100 torr or less, to produce a first nitride layer;(b) combining under metalorganic chemical vapor deposition conditions at least one Group III metalorganic compound with ammonia, hydrazine, nitrogen-hydrogen, or combinations thereof in a molar ratio of between about 1/10000 and 2/1 of metalorganic to the ammonia, hydrazine, nitrogen-hydrogen, or combinations thereof, at a high pressure of about 700 to 760 torr or greater for between about 5 and 60 min to produce a nitride layer having a reduced defect density and;(c) repeating steps (a) and (b) to produce a Group III metal nitride having a reduced defect density of less than half of the defects observed wherein high and low pressure cycling is not used.
摘要翻译：本发明涉及一种生产具有较低缺陷密度的III族氮化物薄膜的改进方法，该方法包括：（a）在金属有机化学气相沉积（MOCVD）条件下，将至少一种III族金属有机化合物与氨，肼，氮 - 氢或其组合，在约100托或更低的低压下，与金，氨，肼，氮 - 氢或其组合的金属有机物的摩尔比为约1/10000至2/1，以产生第一氮化物层; （b）在金属有机化学气相沉积条件下将至少一种III族金属有机化合物与氨，肼，氮 - 氢或其组合以金属有机物与氨的摩尔比约为1/10000至2/1，肼，氮 - 氢或其组合，在约700至760托或更高的高压下进行约5至60分钟，以产生具有降低的缺陷密度的氮化物层; （c）重复步骤（a）和（b）以产生具有小于不使用高低压循环的缺陷的一半缺陷密度的III族金属氮化物。

10. 发明授权

US08227819B2 Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes 失效
标题翻译：薄型p型氮化镓和氮化镓氮化镓电子阻挡层无氮化镓基发光二极管
公开(公告)号：US08227819B2
公开(公告)日：2012-07-24
申请号：US13250558
申请日：2011-09-30
申请人： Hong Zhong , Anurag Tyagi , James Stephen Speck , Steven P. Denbaars , Shuji Nakamura
发明人： Hong Zhong , Anurag Tyagi , James Stephen Speck , Steven P. Denbaars , Shuji Nakamura
IPC分类号： H01L33/00
CPC分类号： H01L33/18 , H01L33/02
摘要： A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.
摘要翻译：具有厚度为100nm以下的p型层的发光二极管（LED），位于p型层和n型层之间的n型层和有源层，用于发光，其中LED不包括单独的电子阻挡层。

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