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1. 发明授权

US06521546B1 Method of making a fluoro-organosilicate layer 失效
标题翻译：制备氟 - 有机硅酸盐层的方法
公开(公告)号：US06521546B1
公开(公告)日：2003-02-18
申请号：US09593851
申请日：2000-06-14
申请人： Michael Barnes , Hichem M'Saad , Huong Thanh Nguyen , Farhad Moghadam
发明人： Michael Barnes , Hichem M'Saad , Huong Thanh Nguyen , Farhad Moghadam
IPC分类号： H01L2131
CPC分类号： H01L21/02131 , C23C16/30 , H01L21/02211 , H01L21/02274 , H01L21/3127 , H01L21/31629
摘要： A method of forming an integrated circuit using a fluoro-organosilicate layer is disclosed. The fluoro-organosilicate layer is formed by applying an electric field to a gas mixture comprising a fluoro-organosilane compound and an oxidizing gas. The fluoro-organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the fluoro-organosilicate layer is used as a hardmask. In another integrated circuit fabrication process, the fluoro-organosilicate layer is incorporated into a damascene structure.
摘要翻译：公开了一种使用氟 - 有机硅酸盐层形成集成电路的方法。通过向包含氟 - 有机硅烷化合物和氧化气体的气体混合物施加电场而形成氟 - 有机硅酸盐层。氟 - 有机硅酸盐层与集成电路制造工艺兼容。在一个集成电路制造工艺中，氟 - 有机硅酸盐层用作硬掩模。在另一集成电路制造工艺中，氟 - 有机硅酸盐层被结合到镶嵌结构中。

2. 发明授权

US07097716B2 Method for performing fluorocarbon chamber cleaning to eliminate fluorine memory effect 失效
标题翻译：执行氟碳室清洗以消除氟记忆效应的方法
公开(公告)号：US07097716B2
公开(公告)日：2006-08-29
申请号：US10274093
申请日：2002-10-17
申请人： Michael Barnes , Huong Thanh Nguyen
发明人： Michael Barnes , Huong Thanh Nguyen
IPC分类号： B08B3/00
CPC分类号： C11D11/0041 , Y10S438/905
摘要： A method of cleaning a plasma etching reactor is provided. The method of cleaning a plasma etching reactor includes generating one or more plasmas from oxygen gas and a hydrogen-containing gas, and exposing interior surfaces of the reactor to the plasma(s) from the oxygen-gas and the hydrogen-containing gas. The cleaning method is used to remove deposited material, such as deposits containing fluorine, carbon, oxygen, and hydrogen from interior surfaces of the reactor. The hydrogen-containing gas may contribute to the cleaning method by providing a source of hydrogen that removes fluorine from the surfaces of the reactor.
摘要翻译：提供了一种清洗等离子体蚀刻反应器的方法。清洁等离子体蚀刻反应器的方法包括从氧气和含氢气体产生一个或多个等离子体，并将反应器的内表面从氧气和含氢气体暴露于等离子体。清洁方法用于从反应器的内表面去除沉积物，例如含有氟，碳，氧和氢的沉积物。含氢气体可以通过提供从反应器表面除去氟的氢源来促进清洗方法。

3. 发明授权

US06569257B1 Method for cleaning a process chamber 失效
标题翻译：清洁处理室的方法
公开(公告)号：US06569257B1
公开(公告)日：2003-05-27
申请号：US09710357
申请日：2000-11-09
申请人： Huong Thanh Nguyen , Michael Barnes , Li-Qun Xia , Ellie Yieh
发明人： Huong Thanh Nguyen , Michael Barnes , Li-Qun Xia , Ellie Yieh
IPC分类号： B08B300
CPC分类号： H01J37/32862 , C23C16/4405
摘要： A method for cleaning silicon carbide and/or organosilicate layers from interior surfaces of a process chamber is disclosed. In one aspect, silicon carbide and/or organosilicate layers are cleaned from interior surfaces of a process chamber by treating it with a hydrogen/fluorine-based plasma. In another aspect, silicon carbide and/or organosilicate layer are cleaned from interior surfaces of the process chamber by treating it with a hydrogen-based plasma followed by a fluorine-based plasma. Alternatively, silicon carbide and/or organosilicate layers are cleaned from interior surfaces of the chamber by treating it with a fluorine-based plasma followed by a hydrogen-based plasma.
摘要翻译：公开了一种从处理室的内表面清洁碳化硅和/或有机硅酸盐层的方法。在一个方面，通过用氢/氟基等离子体处理碳化硅和/或有机硅酸盐层，从处理室的内表面清洗。另一方面，通过用基于氢的等离子体处理它，随后用氟基等离子体处理碳化硅和/或有机硅酸盐层，从处理室的内表面清洗。或者，通过用氟基等离子体处理，然后用氢基等离子体来清洗碳化硅和/或有机硅酸盐层，从室的内表面清洗。

4. 发明授权

US06541282B1 Plasma processes for depositing low dielectric constant films 失效
标题翻译：用于沉积低介电常数膜的等离子体工艺
公开(公告)号：US06541282B1
公开(公告)日：2003-04-01
申请号：US09594187
申请日：2000-06-13
申请人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
发明人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
IPC分类号： H05H102
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O; at a constant RF power level from about 10 W to about 150 W, or a pulsed RF power level from about 20 W to about 250 W during 10% to 30% of the duty cycle.
摘要翻译：一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和设备或从约20W至约500W的脉冲RF功率水平。在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。优选的氧化有机硅烷膜是通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O的反应制备的; 在约10W至约150W的恒定RF功率水平或在占空比的10％至30％期间从约20W至约250W的脉冲RF功率水平。

5. 发明授权

US06869896B2 Plasma processes for depositing low dielectric constant films 有权
标题翻译：用于沉积低介电常数膜的等离子体工艺
公开(公告)号：US06869896B2
公开(公告)日：2005-03-22
申请号：US10647959
申请日：2003-08-26
申请人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
发明人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
IPC分类号： C23C16/40 , H01L21/316 , H01L21/768 , H01L21/31
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.
摘要翻译：一种通过有机硅化合物和包含碳的氧化气体以恒定的RF功率水平的反应沉积低介电常数膜的方法和装置。在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。

6. 发明授权

US06734115B2 Plasma processes for depositing low dielectric constant films 有权
公开(公告)号：US06734115B2
公开(公告)日：2004-05-11
申请号：US10229992
申请日：2002-08-27
申请人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
发明人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
IPC分类号： H01L2131
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

7. 发明申请

US20050191846A1 Plasma processes for depositing low dielectric constant films 有权
公开(公告)号：US20050191846A1
公开(公告)日：2005-09-01
申请号：US11087393
申请日：2005-03-22
申请人： David Cheung , Wai-Fan Yau , Robert Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Poon
发明人： David Cheung , Wai-Fan Yau , Robert Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Poon
IPC分类号： C23C16/40 , H01L21/316 , H01L21/768 , H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.

8. 发明授权

US06583071B1 Ultrasonic spray coating of liquid precursor for low K dielectric coatings 失效
标题翻译：用于低K电介质涂层的液体前体的超声波喷涂
公开(公告)号：US06583071B1
公开(公告)日：2003-06-24
申请号：US09692660
申请日：2000-10-18
申请人： Timothy Weidman , Yunfeng Lu , Michael P Nault , Michael Barnes , Farhad Moghadam
发明人： Timothy Weidman , Yunfeng Lu , Michael P Nault , Michael Barnes , Farhad Moghadam
IPC分类号： H01L2131
CPC分类号： H01L21/3122 , C23C16/30 , C23C16/325 , C23C16/401 , C23C16/4486 , H01L21/02126 , H01L21/02167 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/02282 , H01L21/312 , H01L21/3124 , H01L21/3125 , H01L21/31633 , H01L21/31695 , H01L21/76801 , H01L21/76828 , H01L21/76834
摘要： A process for forming a extremely low dielectric constant film over a substrate. The process includes coating a substrate with a solution comprising a soluble source of silicon oxide, water, a solvent, a surfactant and a catalyst using an ultrasonic spray nozzle. The coated substrate is then subsequently treated to harden the solution into an extremely low dielectric constant film.
摘要翻译：一种在衬底上形成极低介电常数膜的方法。该方法包括使用超声波喷嘴将包含可溶性氧化硅源，水，溶剂，表面活性剂和催化剂的溶液涂覆在基材上。然后将涂覆的基底随后处理以将溶液硬化成极低介电常数的膜。

9. 发明授权

US06562690B1 Plasma processes for depositing low dielectric constant films 失效
标题翻译：用于沉积低介电常数膜的等离子体工艺
公开(公告)号：US06562690B1
公开(公告)日：2003-05-13
申请号：US09594186
申请日：2000-06-13
申请人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
发明人： David Cheung , Wai-Fan Yau , Robert P. Mandal , Shin-Puu Jeng , Kuo-Wei Liu , Yung-Cheng Lu , Michael Barnes , Ralf B. Willecke , Farhad Moghadam , Tetsuya Ishikawa , Tze Wing Poon
IPC分类号： H01L2176
CPC分类号： H01L21/76835 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/31612 , H01L21/76801 , H01L21/76808 , H01L21/7681 , H01L21/76829 , H01L21/76832 , H01L21/76834 , H01L2221/1031 , Y10T428/24926 , Y10T428/31663
摘要： A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle.
摘要翻译：一种用于通过有机硅化合物和氧化性气体以约10W至约200W的恒定RF功率水平的反应沉积低介电常数膜的方法和装置或约20W至约500W的脉冲RF功率水平。在与有机硅化合物混合之前，优选在单独的微波室内可以提高氧化气体的离解，以帮助控制沉积膜的碳含量。氧化的有机硅烷或有机硅氧烷膜具有良好的屏障性能，用作邻近其它介电层的衬垫层或盖层。氧化的有机硅烷或有机硅氧烷膜也可以用作蚀刻停止层和用于制造双镶嵌结构的金属间介电层。氧化的有机硅烷或有机硅氧烷膜也在不同的介电层之间提供优异的粘附性。优选的氧化有机硅烷膜通过甲基硅烷，CH 3 SiH 3或二甲基硅烷，（CH 3）2 SiH 2和一氧化二氮，N 2 O以约10W至约150W的恒定RF功率水平或约20W的脉冲RF功率水平在占用周期的10％到30％的范围内达到约250W。

10. 发明授权

US06511923B1 Deposition of stable dielectric films 失效
标题翻译：沉积稳定的介电膜
公开(公告)号：US06511923B1
公开(公告)日：2003-01-28
申请号：US09574404
申请日：2000-05-19
申请人： Yaxin Wang , Michael Barnes , Thanh N. Pham , Farhad Moghadam
发明人： Yaxin Wang , Michael Barnes , Thanh N. Pham , Farhad Moghadam
IPC分类号： H01L2131
CPC分类号： H01L21/31053 , H01L21/31629
摘要： A composite insulating film including three layers is formed on a substrate having a gap. The first layer partially fills the gap and contains a dielectric material having a low dielectric constant, such as halogen-doped silicate glass. The second layer is formed over the first layer, and contains an undoped dielectric material such as silicon oxide, nitride, or oxynitride. The second layer is more stable and integrable, and less susceptible to moisture absorption and outgassing, than the first layer. The second layer is substantially smaller in thickness than the first layer, and at least substantially fills the gap. The third layer is formed over the second layer, and contains a dielectric material having a low dielectric constant, such as halogen-doped silicate glass. In a specific embodiment, the first layer is formed by plasma-enhanced chemical vapor deposition in which reactive species are generated from a process gas mixture by plasma for sputtering the first layer.
摘要翻译：在具有间隙的基板上形成包括三层的复合绝缘膜。第一层部分地填充间隙并且包含具有低介电常数的介电材料，例如掺杂卤素的硅酸盐玻璃。第二层形成在第一层上，并且包含未掺杂的介电材料，例如氧化硅，氮化物或氧氮化物。第二层比第一层更稳定和可整合，较不易吸潮和脱气。第二层的厚度明显小于第一层，并且至少基本上填充间隙。第三层形成在第二层上，并且包含具有低介电常数的电介质材料，例如卤素掺杂的硅酸盐玻璃。在具体实施例中，第一层通过等离子体增强化学气相沉积形成，其中通过等离子体从工艺气体混合物产生反应性物质以溅射第一层。

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