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1. 发明授权

US08921030B2 Tone inversion of self-assembled self-aligned structures 有权
标题翻译：自组装自对准结构的音调反演
公开(公告)号：US08921030B2
公开(公告)日：2014-12-30
申请号：US13603869
申请日：2012-09-05
申请人： Michael A. Guillorn , Steven J. Holmes , Chi-Chun Liu , Hiroyuki Miyazoe , Hsinyu Tsai
发明人： Michael A. Guillorn , Steven J. Holmes , Chi-Chun Liu , Hiroyuki Miyazoe , Hsinyu Tsai
IPC分类号： G03F7/00
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , H01L21/3086
摘要： A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch.
摘要翻译：在衬底上设置有机平面化层（OPL）和模板层的叠层。将模板层图案化以引起随后沉积的共聚物层的自组装。共聚物层被沉积并退火以形成相分离的共聚物嵌段。通过相对于第一相分离的聚合物除去第二相分离的聚合物形成原始的自组装图案。原始图案通过各向异性蚀刻转移到OPL中，并且去除第一相分离的聚合物和模板层。在包含原始图案的图案化OPL上沉积旋涂电介质（SOD）材料层，以形成填充图案化OPL内的沟槽的SOD部分。图案化的OPL被选择性地移除到包括互补图案的SOD部分。 SOD部分的互补图案通过各向异性蚀刻转移到下面的层中。

2. 发明授权

US08771929B2 Tone inversion of self-assembled self-aligned structures 有权
公开(公告)号：US08771929B2
公开(公告)日：2014-07-08
申请号：US13587088
申请日：2012-08-16
申请人： Michael A. Guillorn , Steven J. Holmes , Chi-Chun Liu , Hiroyuki Miyazoe , Hsinyu Tsai
发明人： Michael A. Guillorn , Steven J. Holmes , Chi-Chun Liu , Hiroyuki Miyazoe , Hsinyu Tsai
IPC分类号： G03F7/26
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , H01L21/3086
摘要： A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch.

3. 发明申请

US20140148012A1 TONE INVERSION OF SELF-ASSEMBLED SELF-ALIGNED STRUCTURES 有权
公开(公告)号：US20140148012A1
公开(公告)日：2014-05-29
申请号：US13587088
申请日：2012-08-16
申请人： Michael A. Guillorn , Steven J. Holmes , Chi-Chun Liu , Hiroyuki Miyazoe , Hsinyu Tsai
发明人： Michael A. Guillorn , Steven J. Holmes , Chi-Chun Liu , Hiroyuki Miyazoe , Hsinyu Tsai
IPC分类号： H01L21/033
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , H01L21/3086
摘要： A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch.

4. 发明授权

US08916054B2 High fidelity patterning employing a fluorohydrocarbon-containing polymer 有权
标题翻译：采用含氟代烃基聚合物的高保真图案
公开(公告)号：US08916054B2
公开(公告)日：2014-12-23
申请号：US13281749
申请日：2011-10-26
申请人： Markus Brink , Sebastian U. Engelmann , Nicholas C. M. Fuller , Michael A. Guillorn , Hiroyuki Miyazoe , Masahiro Nakamura
发明人： Markus Brink , Sebastian U. Engelmann , Nicholas C. M. Fuller , Michael A. Guillorn , Hiroyuki Miyazoe , Masahiro Nakamura
IPC分类号： B44C1/22 , H01L21/033 , H01L21/311 , G03F7/40 , G03F7/09
CPC分类号： G03F7/094 , G03F7/091 , G03F7/40 , H01L21/0332 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144 , Y10T428/24479
摘要： A stack of a hard mask layer, a soft mask layer, and a photoresist is formed on a substrate. The photoresist is patterned to include at least one opening. The pattern is transferred into the soft mask layer by an anisotropic etch, which forms a carbon-rich polymer that includes more carbon than fluorine. The carbon-rich polymer can be formed by employing a fluorohydrocarbon-containing plasma generated with fluorohydrocarbon molecules including more hydrogen than fluorine. The carbon-rich polymer coats the sidewalls of the soft mask layer, and prevents widening of the pattern transferred into the soft mask. The photoresist is subsequently removed, and the pattern in the soft mask layer is transferred into the hard mask layer. Sidewalls of the hard mask layer are coated with the carbon-rich polymer to prevent widening of the pattern transferred into the hard mask.
摘要翻译：在基板上形成硬掩模层，软掩模层和光致抗蚀剂的堆叠。图案化光致抗蚀剂以包括至少一个开口。该图案通过各向异性蚀刻转移到软掩模层中，其形成包含比氟更多的碳的富碳聚合物。富含碳的聚合物可以通过使用包含比氟更多的氢的氟代烃分子产生的含氟代烃等离子体形成。富含碳的聚合物涂覆软掩模层的侧壁，并且防止转移到软掩模中的图案的加宽。随后去除光致抗蚀剂，并将软掩模层中的图案转移到硬掩模层中。用富含碳的聚合物涂覆硬掩模层的侧壁以防止转移到硬掩模中的图案变宽。

5. 发明申请

US20130108833A1 HIGH FIDELITY PATTERNING EMPLOYING A FLUOROHYDROCARBON-CONTAINING POLYMER 有权
标题翻译：使用含氟聚合物聚合物的高清晰度图案
公开(公告)号：US20130108833A1
公开(公告)日：2013-05-02
申请号：US13281749
申请日：2011-10-26
申请人： Markus Brink , Sebastian U. Engelmann , Nicholas C. M. Fuller , Michael A. Guillorn , Hiroyuki Miyazoe , Masahiro Nakamura
发明人： Markus Brink , Sebastian U. Engelmann , Nicholas C. M. Fuller , Michael A. Guillorn , Hiroyuki Miyazoe , Masahiro Nakamura
IPC分类号： B32B3/00 , C23F1/02
CPC分类号： G03F7/094 , G03F7/091 , G03F7/40 , H01L21/0332 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144 , Y10T428/24479
摘要： A stack of a hard mask layer, a soft mask layer, and a photoresist is formed on a substrate. The photoresist is patterned to include at least one opening. The pattern is transferred into the soft mask layer by an anisotropic etch, which forms a carbon-rich polymer that includes more carbon than fluorine. The carbon-rich polymer can be formed by employing a fluorohydrocarbon-containing plasma generated with fluorohydrocarbon molecules including more hydrogen than fluorine. The carbon-rich polymer coats the sidewalls of the soft mask layer, and prevents widening of the pattern transferred into the soft mask. The photoresist is subsequently removed, and the pattern in the soft mask layer is transferred into the hard mask layer. Sidewalls of the hard mask layer are coated with the carbon-rich polymer to prevent widening of the pattern transferred into the hard mask.
摘要翻译：在基板上形成硬掩模层，软掩模层和光致抗蚀剂的堆叠。图案化光致抗蚀剂以包括至少一个开口。该图案通过各向异性蚀刻转移到软掩模层中，其形成包含比氟更多的碳的富碳聚合物。富含碳的聚合物可以通过使用包含比氟更多的氢的氟代烃分子产生的含氟代烃等离子体形成。富含碳的聚合物涂覆软掩模层的侧壁，并且防止转移到软掩模中的图案的加宽。随后去除光致抗蚀剂，并将软掩模层中的图案转移到硬掩模层中。用富含碳的聚合物涂覆硬掩模层的侧壁以防止转移到硬掩模中的图案变宽。

6. 发明授权

US09190316B2 Low energy etch process for nitrogen-containing dielectric layer 有权
标题翻译：含氮介电层的低能蚀刻工艺
公开(公告)号：US09190316B2
公开(公告)日：2015-11-17
申请号：US13281732
申请日：2011-10-26
申请人： Markus Brink , Robert L. Bruce , Sebastian U. Engelmann , Nicholas C. M. Fuller , Hiroyuki Miyazoe , Masahiro Nakamura
发明人： Markus Brink , Robert L. Bruce , Sebastian U. Engelmann , Nicholas C. M. Fuller , Hiroyuki Miyazoe , Masahiro Nakamura
IPC分类号： H01L21/00 , H01L21/768 , H01L21/311 , H01L21/321
CPC分类号： H01L23/53295 , H01L21/31116 , H01L21/31144 , H01L21/3212 , H01L21/76802 , H01L21/76813 , H01L21/76831 , H01L21/76834 , H01L21/76835 , H01L23/5226 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： A stack that includes, from bottom to top, a nitrogen-containing dielectric layer, an interconnect level dielectric material layer, and a hard mask layer is formed on a substrate. The hard mask layer and the interconnect level dielectric material layer are patterned by an etch. Employing the patterned hard mask layer as an etch mask, the nitrogen-containing dielectric layer is patterned by a break-through anisotropic etch, which employs a fluorohydrocarbon-containing plasma to break through the nitrogen-containing dielectric layer. Fluorohydrocarbon gases used to generate the fluorohydrocarbon-containing plasma generate a carbon-rich polymer residue, which interact with the nitrogen-containing dielectric layer to form volatile compounds. Plasma energy can be decreased below 100 eV to reduce damage to physically exposed surfaces of the interconnect level dielectric material layer.
摘要翻译：在基板上形成从底部到顶部包括含氮介电层，互连层介电材料层和硬掩模层的堆叠。通过蚀刻对硬掩模层和互连层电介质材料层进行图案化。使用图案化的硬掩模层作为蚀刻掩模，通过使用含氟烃的等离子体穿过含氮介电层的穿透各向异性蚀刻来对含氮介电层进行图案化。用于产生含氟烃的等离子体的氟烃气体产生富含碳的聚合物残余物，其与含氮介电层相互作用以形成挥发性化合物。等离子体能量可以降低到低于100eV，以减少互连层介电材料层的物理暴露表面的损伤。

7. 发明申请

US20130105996A1 LOW ENERGY ETCH PROCESS FOR NITROGEN-CONTAINING DIELECTRIC LAYER 有权
标题翻译：含氮电介质层的低能量蚀刻工艺
公开(公告)号：US20130105996A1
公开(公告)日：2013-05-02
申请号：US13281732
申请日：2011-10-26
申请人： Markus Brink , Robert L. Bruce , Sebastian U. Engelmann , Nicholas C. M. Fuller , Hiroyuki Miyazoe , Masahiro Nakamura
发明人： Markus Brink , Robert L. Bruce , Sebastian U. Engelmann , Nicholas C. M. Fuller , Hiroyuki Miyazoe , Masahiro Nakamura
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L23/53295 , H01L21/31116 , H01L21/31144 , H01L21/3212 , H01L21/76802 , H01L21/76813 , H01L21/76831 , H01L21/76834 , H01L21/76835 , H01L23/5226 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： A stack that includes, from bottom to top, a nitrogen-containing dielectric layer, an interconnect level dielectric material layer, and a hard mask layer is formed on a substrate. The hard mask layer and the interconnect level dielectric material layer are patterned by an etch. Employing the patterned hard mask layer as an etch mask, the nitrogen-containing dielectric layer is patterned by a break-through anisotropic etch, which employs a fluorohydrocarbon-containing plasma to break through the nitrogen-containing dielectric layer. Fluorohydrocarbon gases used to generate the fluorohydrocarbon-containing plasma generate a carbon-rich polymer residue, which interact with the nitrogen-containing dielectric layer to form volatile compounds. Plasma energy can be decreased below 100 eV to reduce damage to physically exposed surfaces of the interconnect level dielectric material layer.
摘要翻译：在基板上形成从底部到顶部包括含氮介电层，互连层介电材料层和硬掩模层的堆叠。通过蚀刻对硬掩模层和互连层电介质材料层进行图案化。使用图案化的硬掩模层作为蚀刻掩模，通过使用含氟烃的等离子体穿过含氮介电层的穿透各向异性蚀刻来对含氮介电层进行图案化。用于产生含氟烃的等离子体的氟烃气体产生富含碳的聚合物残余物，其与含氮介电层相互作用以形成挥发性化合物。等离子体能量可以降低到低于100eV，以减少互连层介电材料层的物理暴露表面的损伤。

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