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1. 发明申请

US20100079662A1 IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR OF IMAGE SENSOR 有权
标题翻译：图像传感器和驱动图像传感器传输晶体管的方法
公开(公告)号：US20100079662A1
公开(公告)日：2010-04-01
申请号：US12630081
申请日：2009-12-03
申请人： Bong Ki MHEEN , Mi Jin KIM , Young Joo SONG
发明人： Bong Ki MHEEN , Mi Jin KIM , Young Joo SONG
IPC分类号： H04N5/225
CPC分类号： H04N5/3597 , H01L27/14603 , H01L27/14609 , H04N5/357 , H04N5/361 , H04N5/3745
摘要： Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.
摘要翻译：提供了一种4晶体管CMOS图像，其中改变驱动条件或像素结构，使得像素在复位和传输操作期间在夹断状态下工作，以减少暗电流和固定图案噪声由转移晶体管的操作条件的变化和像素间特性差异引起。图像传感器包括光敏像素，其包括用于传输在光电二极管中产生的光子感应电荷的转移晶体管; 以及电压控制单元，用于在所述转移晶体管的导通部分的部分或整个部分期间将施加到所述转移晶体管的栅极的导通电压控制为低于浮置扩散节点电压加上所述转移晶体管的阈值电压转移晶体管使得转移晶体管以伪夹断模式工作。

2. 发明申请

US20100079178A1 IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR OF IMAGE SENSOR 有权
公开(公告)号：US20100079178A1
公开(公告)日：2010-04-01
申请号：US12630071
申请日：2009-12-03
申请人： Bong Ki MHEEN , Mi Jin KIM , Young Joo SONG
发明人： Bong Ki MHEEN , Mi Jin KIM , Young Joo SONG
IPC分类号： H03B1/00
CPC分类号： H04N5/3597 , H01L27/14603 , H01L27/14609 , H04N5/357 , H04N5/361 , H04N5/3745
摘要： Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.

3. 发明申请

US20080079043A1 LIGHT SENSING PIXEL OF IMAGE SENSOR WITH LOW OPERATING VOLTAGE 审中-公开
标题翻译：具有低工作电压的图像传感器的感光像素
公开(公告)号：US20080079043A1
公开(公告)日：2008-04-03
申请号：US11857001
申请日：2007-09-18
申请人： Mi Jin KIM , Bong Ki MHEEN , Young Joo SONG
发明人： Mi Jin KIM , Bong Ki MHEEN , Young Joo SONG
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1463 , H01L27/14689
摘要： Provided is a light sensing pixel including an image sensor. In a general four-transistor Complementary Metal-Oxide Semiconductor (CMOS) image sensor, unlike a conventional structure, a transfer transistor in a pixel includes a depletion region separated from a channel that is not influenced by a turn-on voltage of the transfer transistor regardless of a driving voltage or a driving method when a photodiode is reset and transferred. As a result, dark current or fixed pattern noise, caused by a change in operating condition of the transfer transistor and inconsistent characteristics between the pixels, is reduced.The image sensor includes a light sensing pixel that includes the transfer transistor for transferring a light-induced charge generated by the photodiode. The light sensing pixel, to dispose the depletion region between the channel of the transfer transistor and a diffusion node, i.e., to operate in the similar pinch-off state, may have a structure in which an insulating layer of the diffusion node side is thicker than a gate insulating layer adjacent to the photodiode in the transfer transistor. That is, the insulating layer of the transfer transistor has steps or a gradual change in thickness. Also, the light sensing pixel may have a structure in which pocket/halo implant using electrically the same material as a doping material of a substrate is performed between the channel of the transfer transistor and the diffusion node.
摘要翻译：提供了包括图像传感器的感光像素。在通常的四晶体管互补金属氧化物半导体（CMOS）图像传感器中，与传统结构不同，像素中的传输晶体管包括与不受传输晶体管的导通电压影响的沟道分离的耗尽区不管驱动电压或驱动方式如何，当光电二极管复位和传输时。结果，由于转移晶体管的工作状态的变化引起的暗电流或固定图案噪声减小了。该图像传感器包括光传感像素，其包括用于传输由光电二极管产生的光感应电荷的传输晶体管。为了在传输晶体管的沟道和扩散节点之间设置耗尽区，即以类似的夹断状态工作的光感测像素可以具有其中扩散节点侧的绝缘层较厚的结构比与传输晶体管中的光电二极管相邻的栅绝缘层。也就是说，转移晶体管的绝缘层具有步骤或厚度的逐渐变化。此外，光感测像素可以具有这样的结构，其中在传输晶体管的沟道和扩散节点之间执行使用与衬底的掺杂材料相同的材料的袋/晕注入。

4. 发明申请

US20100110258A1 IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR OF IMAGE SENSOR 有权
公开(公告)号：US20100110258A1
公开(公告)日：2010-05-06
申请号：US12645588
申请日：2009-12-23
申请人： Bong Ki MHEEN , Mi Jin KIM , Young Joo SONG
发明人： Bong Ki MHEEN , Mi Jin KIM , Young Joo SONG
IPC分类号： H04N5/335
CPC分类号： H04N5/3597 , H01L27/14603 , H01L27/14609 , H04N5/357 , H04N5/361 , H04N5/3745
摘要： Provided is a 4-transistor CMOS image in which a driving condition or a pixel structure is changed so that a transfer transistor in a pixel operates in a pinch-off condition during reset and transfer operations in order to reduce dark current and fixed-pattern noise caused by a change in an operation condition of the transfer transistor and inter-pixel characteristic discrepancy. The image sensor includes a photosensitive pixel including a transfer transistor for transferring photon-induced charges created in a photodiode; and a voltage control unit for controlling a turn-on voltage applied to a gate of the transfer transistor to be lower than a floating diffusion node voltage plus the threshold voltage of the transfer transistor during a partial or entire section of a turn-on section of the transfer transistor such that the transfer transistor operates in a pseudo pinch-off mode.

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