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    • 1. 发明申请
    • INTEGRATED HIGH SIDE GATE DRIVER STRUCTURE AND CIRCUIT FOR DRIVING HIGH SIDE POWER TRANSISTORS
    • 集成高侧门驱动器结构和驱动高功率晶体管的电路
    • US20160336442A1
    • 2016-11-17
    • US15112830
    • 2015-01-16
    • MERUS AUDIO APS
    • Allan Nogueras NielsenMikkel Høyerby
    • H01L29/78H03K17/687H01L27/06H03F3/217
    • H01L29/7816H01L21/761H01L21/823892H01L27/0629H01L29/1083H01L29/1087H01L29/78H03F3/2171H03F3/2173H03K17/687
    • The present invention relates to an integrated high side gate driver structure for driving a power transistor. The high side gate driver structure comprises a semiconductor substrate comprising a first polarity semiconductor material in which a first well diffusion comprising a second polarity semiconductor material is formed. A peripheral outer wall of the first well diffusion is abutted to the semiconductor substrate. A second well diffusion, comprising first polarity semiconductor material, is arranged inside the first well diffusion such that an outer peripheral wall of the second well diffusion is abutted to an inner peripheral wall of the first well diffusion. The integrated high side gate driver structure further comprises a gate driver comprising a high side positive supply voltage port, a high side negative supply voltage port, a driver input and a driver output, wherein the gate driver comprises a transistor driver arranged in the second well diffusion such that a control terminal of the transistor driver and an output terminal of the transistor driver is coupled to the driver input and the driver output, respectively; the integrated high side gate driver structure also comprises a first electrical connection between the first well diffusion and the high side negative supply voltage port and a second electrical connection between the second well diffusion and the high side negative supply voltage port.
    • 本发明涉及用于驱动功率晶体管的集成高边栅极驱动器结构。 高侧栅极驱动器结构包括包括第一极性半导体材料的半导体衬底,其中形成包括第二极性半导体材料的第一阱扩散。 第一阱扩散部的周边外壁与半导体基板抵接。 包括第一极性半导体材料的第二阱扩散布置在第一阱扩散内部,使得第二阱扩散的外周壁与第一阱扩散的内周壁邻接。 集成高侧栅极驱动器结构还包括栅极驱动器,其包括高侧正电源电压端口,高侧负电源电压端口,驱动器输入端和驱动器输出端,其中栅极驱动器包括布置在第二阱中的晶体管驱动器 扩散,使得晶体管驱动器的控制端子和晶体管驱动器的输出端子分别耦合到驱动器输入端和驱动器输出端; 集成的高侧栅极驱动器结构还包括第一阱扩散和高侧负电源电压端口之间的第一电连接以及第二阱扩散与高侧负电源电压端口之间的第二电连接。