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2. 发明授权

US06323114B1 Stacked/composite gate dielectric which incorporates nitrogen at an interface 有权
标题翻译：在界面上结合氮的堆叠/复合栅极电介质
公开(公告)号：US06323114B1
公开(公告)日：2001-11-27
申请号：US09447407
申请日：1999-11-22
申请人： Sunil V. Hattangady , Tad (Douglas) Grider , John W. Kuehne
发明人： Sunil V. Hattangady , Tad (Douglas) Grider , John W. Kuehne
IPC分类号： H01L213205
CPC分类号： H01L21/28202 , H01L21/32105 , H01L29/513 , H01L29/518
摘要： An embodiment of the instant invention is a method of fabricating an electronic device over a semiconductor substrate which includes a dielectric layer formed between a first structure and a second structure, the method comprising the steps of: growing an oxide-containing layer (layer 204 of FIGS. 2a-2d) on the first structure (substrate 202 of FIGS. 2a-2d); forming a silicon-containing layer (layer 206 of FIG. 2b) on the oxide-containing layer; oxidizing substantially all of the silicon-containing layer by subjecting it to an ambient comprised of oxygen and nitrogen with a substrate temperature around 700 to 800 C.; and forming the second structure (layer 214 of FIG. 2d) on the oxidized silicon-containing layer. Preferably, the step of oxidizing substantially all of the silicon-containing layer is performed by subjecting the silicon-containing layer to an ambient containing: N2O with a wafer temperature around 700 to 800 C.; or NO with a wafer temperature around 700 to 800 C. The nitrogen is, preferably, incorporated between the oxide-containing layer and the first structure and/or between the oxide-containing layer and the oxidized silicon-containing layer.
摘要翻译：本发明的一个实施例是一种在半导体衬底上制造电子器件的方法，该半导体衬底包括在第一结构和第二结构之间形成的介电层，该方法包括以下步骤：生长含氧化物层（层204 图2a-2d）在第一结构（图2a-2d的基板202）上; 在含氧化物层上形成含硅层（图2b的层206）; 通过使其包含氧和氮的环境基本上全部氧化，衬底温度约为700至800℃; 并在氧化的含硅层上形成第二结构（图2d的层214）。优选地，基本上氧化所述含硅层的步骤通过使含硅层在约700至800℃的晶片温度下经受含有N 2 O的环境来进行; 或NO，晶片温度约为700至800℃。氮优选并入含氧化物层和第一结构之间和/或含氧化物层和氧化含硅层之间。

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