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1. 发明授权

US5663583A Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMTs on GaAs substrate 失效
标题翻译： GaAs衬底上的低噪声和功率AlGaPSb / GaInAs HEMT和伪成像HEMT
公开(公告)号：US5663583A
公开(公告)日：1997-09-02
申请号：US466157
申请日：1995-06-06
申请人： Mehran Matloubian , Takyiu Liu , Chanh Nguyen
发明人： Mehran Matloubian , Takyiu Liu , Chanh Nguyen
IPC分类号： H01L21/205 , H01L21/338 , H01L29/201 , H01L29/778 , H01L29/812 , H01L31/0328 , H01L21/20
CPC分类号： H01L29/7783 , H01L29/201
摘要： An epitaxial structure and method of manufacture for a field-effect transistor capable of low-noise and power applications. Preferably, the epitaxial structure includes an N-type barrier layer comprising a wide-gap semiconductor material having the formula Al.sub.1-y Ga.sub.y P.sub.0.71+z Sb.sub.0.29-z.
摘要翻译：一种能够实现低噪声和功率应用的场效应晶体管的外延结构和制造方法。优选地，外延结构包括N型阻挡层，其包含具有式Al1-yGayP0.71 + zSb0.29-z的宽间隙半导体材料。

2. 发明授权

US5721161A Method of making high-speed, low-noise millimeterwave HEMT and pseudormorphic HEMT 失效
标题翻译：制造高速，低噪声毫米波HEMT和伪形HEMT的方法
公开(公告)号：US5721161A
公开(公告)日：1998-02-24
申请号：US555442
申请日：1995-11-09
申请人： Chanh Nguyen , Takyiu Liu , Mehran Matloubian
发明人： Chanh Nguyen , Takyiu Liu , Mehran Matloubian
IPC分类号： H01L21/335 , H01L29/201 , H01L29/205 , H01L29/778 , H01L21/00
CPC分类号： H01L29/66462 , H01L29/201 , H01L29/205 , H01L29/7783
摘要： An epitaxial structure and method of manufacture for a field-effect transistor capable of high-speed low-noise microwave, submillimeterwave and millimeterwave applications. Preferably, the epitaxial structure includes a donor layer and/or buffer layer made from a semiconductor material having the formula AlP.sub.0.39+y Sb.sub.0.61-y.
摘要翻译：一种能够实现高速低噪声微波，亚毫米波和毫米波应用的场效应晶体管的外延结构和制造方法。优选地，外延结构包括由具有式AlP0.39 + ySb0.61-y的半导体材料制成的施主层和/或缓冲层。

3. 发明授权

US5548140A High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt 失效
标题翻译：高速，低噪音毫米波波和假象波
公开(公告)号：US5548140A
公开(公告)日：1996-08-20
申请号：US466156
申请日：1995-06-06
申请人： Chanh Nguyen , Takyiu Liu , Mehran Matloubian
发明人： Chanh Nguyen , Takyiu Liu , Mehran Matloubian
IPC分类号： H01L21/335 , H01L29/201 , H01L29/205 , H01L29/778 , H01L31/0328 , H01L29/06
CPC分类号： H01L29/66462 , H01L29/201 , H01L29/205 , H01L29/7783
摘要： An epitaxial structure and method of manufacture for a field-effect transistor capable of high-speed low-noise microwave, submillimeterwave and millimeterwave applications. Preferably, the epitaxial structure includes a donor layer and/or buffer layer made from a semiconductor material having the formula AlP.sub.0.39+y Sb.sub.0.61-y.
摘要翻译：一种能够实现高速低噪声微波，亚毫米波和毫米波应用的场效应晶体管的外延结构和制造方法。优选地，外延结构包括由具有式AlP0.39 + ySb0.61-y的半导体材料制成的施主层和/或缓冲层。

4. 发明授权

US5612551A AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications 失效
标题翻译： AlPb / InP单异质结双极晶体管在InP衬底上用于高速，大功率应用
公开(公告)号：US5612551A
公开(公告)日：1997-03-18
申请号：US672210
申请日：1996-06-27
申请人： Takyiu Liu , Chanh Nguyen , Mehran Matloubian
发明人： Takyiu Liu , Chanh Nguyen , Mehran Matloubian
IPC分类号： H01L29/73 , H01L21/203 , H01L21/331 , H01L29/201 , H01L29/205 , H01L29/737 , H01L31/0328
CPC分类号： H01L29/205 , H01L29/201 , H01L29/7371 , Y10S148/072
摘要： An epitaxial structure and method of manufacture for a single heterojunction bipolar transistor capable of being utilized in high-speed and high-power applications. Preferably, the epitaxial structure comprises an N-type collector made from InP, a P-type base made from InP, and an N-type emitter made from a semiconductor material of approximately 39 mole percent AlP and approximately 61 mole percent Sb.
摘要翻译：用于单个异质结双极晶体管的外延结构和制造方法，其能够用于高速和大功率应用中。优选地，外延结构包括由InP制成的N型集电体，由InP制成的P型基极和由约39摩尔％的AlP和约61摩尔％的Sb的半导体材料制成的N型发射极。

5. 发明授权

US5610086A Method of making an AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications 失效
标题翻译：在InP衬底上制造用于高速，大功率应用的AlPSb / InP单异质结双极晶体管的方法
公开(公告)号：US5610086A
公开(公告)日：1997-03-11
申请号：US468584
申请日：1995-06-06
申请人： Takyiu Liu , Chanh Nguyen , Mehran Matloubian
发明人： Takyiu Liu , Chanh Nguyen , Mehran Matloubian
IPC分类号： H01L29/73 , H01L21/203 , H01L21/331 , H01L29/201 , H01L29/205 , H01L29/737 , H01L21/265
CPC分类号： H01L29/205 , H01L29/201 , H01L29/7371 , Y10S148/072
摘要： An epitaxial structure and method of manufacture for a single heterojunction bipolar transistor capable of being utilized in high-speed and high-power applications. Preferably, the epitaxial structure comprises an N-type collector made from InP, a P-type base made from InP, and an N-type emitter made from a semiconductor material of approximately 39 mole percent AlP and approximately 61 mole percent Sb.
摘要翻译：用于单个异质结双极晶体管的外延结构和制造方法，其能够用于高速和大功率应用中。优选地，外延结构包括由InP制成的N型集电体，由InP制成的P型基极和由约39摩尔％的AlP和约61摩尔％的Sb的半导体材料制成的N型发射极。

6. 发明授权

US5603765A Method of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxy 失效
标题翻译：通过低温分子束外延在InP器件中生长高击穿电压全能层的方法
公开(公告)号：US5603765A
公开(公告)日：1997-02-18
申请号：US507744
申请日：1995-04-21
申请人： Mehran Matloubian , Linda M. Jelloian , Mark Lui , Takyiu Liu
发明人： Mehran Matloubian , Linda M. Jelloian , Mark Lui , Takyiu Liu
IPC分类号： H01L21/203 , H01L21/285 , H01L21/335 , H01L21/20
CPC分类号： H01L29/66462 , H01L21/02392 , H01L21/02463 , H01L21/02505 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02631 , H01L21/28587
摘要： High breakdown voltages for AlInAs layers in InP-based devices, such as a gate layer in an InP HEMT or a collector layer in a heterojunction bipolar transistor, are achieved by growing the AlInAs layer by MBE at a substrate temperature about 70.degree.-125.degree. C. below the temperature at which a 2.times.4 reflective high energy diffraction pattern is observed. This corresponds to a growth temperature range of about 415.degree.-470.degree. C. for a 540.degree. 2.times.4 reconstruction temperature. Preferred growth temperatures within these ranges are 80.degree. C. below the 2.times.4 reconstruction temperature, or about 460.degree. C. Higher breakdown voltages are obtained than when the AlInAs layer is grown at either higher or lower temperatures.
摘要翻译：在基于InP的器件中的AlInAs层的高击穿电压，例如InP HEMT中的栅极层或异质结双极晶体管中的集电极层，是通过在衬底温度约70°-125°下通过MBE生长AlInAs层来实现的低于观察到2x4反射性高能衍射图案的温度。这对应于在540°2×4重建温度下约415°-470℃的生长温度范围。这些范围内的优选生长温度低于2x4重建温度或约460℃以下的80℃。获得比在更高或更低温度下生长AlInAs层的更高的击穿电压。

7. 发明授权

US5753545A Effective constant doping in a graded compositional alloy 失效
标题翻译：在渐变组分合金中有效的恒定掺杂
公开(公告)号：US5753545A
公开(公告)日：1998-05-19
申请号：US349097
申请日：1994-12-01
申请人： Takyiu Liu , Chanh Nguyen
发明人： Takyiu Liu , Chanh Nguyen
IPC分类号： H01L21/203
CPC分类号： H01L21/02579 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/0251 , H01L21/02543 , H01L21/02546 , H01L21/02576
摘要： Epitaxial growth of a chirped superlattice with constant dopings is achieved with minimal growth interruption time. This is done by doping only one of the two compositions during growth of its layer. For example, in the growth of a plurality of alternating layers of InP and GaInAs to form the superlattice, either the InP layers are doped with an n-type dopant, such as silicon, or the GaInAs layers are doped with a p-type dopant, such as beryllium. Alternatively, InP can equally be doped p-type (with beryllium) and GaInAs can be doped n-type (with silicon). In either case, the doping scheme described herein is easily done during molecular beam epitaxial growth by opening and closing the shutter of the dopant (silicon or beryllium) source cell at the appropriate times. To the electrical carriers, the doping superlattice scheme of the present invention presents a uniform doping without any need to change the doping cell temperature. This in turn allows improved controllability and minimal interface contamination.
摘要翻译：实现具有恒定掺杂的啁啾超晶格的外延生长，具有最小的生长中断时间。这通过在其层的生长期间仅掺杂两种组合物中的一种来完成。例如，在形成超晶格的多个交替层的InP和GaInAs的生长中，InP层中掺杂有诸如硅的n型掺杂剂，或者GaInAs层掺杂有p型掺杂剂，如铍。或者，InP可以同样地掺杂p型（具有铍），GaInAs可以掺杂n型（具有硅）。在任一情况下，本文所述的掺杂方案在分子束外延生长期间容易地在合适的时间打开和闭合掺杂剂（硅或铍）源电池的快门来完成。对于电载体，本发明的掺杂超晶格方案呈现均匀掺杂，而不需要改变掺杂电池温度。这反过来又提高了可控性和最小的界面污染。

8. 发明授权

US5606185A Parabolically graded base-collector double heterojunction bipolar transistor 失效
标题翻译：抛物线分级的基极二极管双异质结双极晶体管
公开(公告)号：US5606185A
公开(公告)日：1997-02-25
申请号：US349096
申请日：1994-12-01
申请人： Chanh Nguyen , Takyiu Liu
发明人： Chanh Nguyen , Takyiu Liu
IPC分类号： H01L29/737 , H01L31/0328 , H01L31/0336 , H01L31/072
CPC分类号： H01L29/7371
摘要： A double heterojunction bipolar transistor (DHBT) is provided with a parabolic grade in bandgap at the base-collector junction. The parabolic grade in bandgap is close to parabolic in composition. The parabolic grade in bandgap is achieved by employing a chirped superlattice to mimic the parabolically varying alloy composition. Each period of the superlattice consists of one low-bandgap layer and one high-bandgap layer. The average composition in each period is determined by the relative thicknesses of these two layers. By varying the thickness ratio of these two layers approximately parabolically with (i) the distance from the base for a concave parabola and (ii) the distance from the collector for a convex parabola, the intended parabolic grade is achieved. The exact values may be computed numerically.
摘要翻译：双异质结双极晶体管（DHBT）在基极 - 集电极结上的带隙中具有抛物线等级。带隙中的抛物线等级在组成上接近抛物线。带隙中的抛物线级别通过采用啁啾超晶格来模拟抛物线变化的合金组成来实现。超晶格的每个周期由一个低带隙层和一个高带隙层组成。每个周期的平均组成由这两层的相对厚度决定。通过以下方式改变这两层的厚度比：（i）与凹面抛物线的基底的距离，以及（ii）与凸型抛物线的收集器的距离，实现了预期的抛物线等级。精确值可以数值计算。

9. 发明申请

US20200340775A1 Electromagnetic Coil-gun Launch Systems 审中-公开
公开(公告)号：US20200340775A1
公开(公告)日：2020-10-29
申请号：US16395230
申请日：2019-04-25
申请人： Joshua Z. Zhou , Takyiu Liu
发明人： Joshua Z. Zhou , Takyiu Liu
IPC分类号： F41B6/00 , H01F7/20 , H01F7/06
摘要： An accelerator for a projectile includes a coil; an H-bridge coupled to the coil with four relays S1-S4, and a controller to control current flow in the coil, wherein when relays S1 and S4 are on and relays S2 and S3 are off, current goes through the coil in one direction, and when the states of the relays are switched, current direction reverses, wherein switching the current direction ensures that the projectile has a positive acceleration.

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