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1. 发明授权

US07811383B2 Device for making monocrystalline or multicrystalline materials, in particular multicrystalline silicon 有权
标题翻译：用于制造单晶或多晶材料的装置，特别是多晶硅
公开(公告)号：US07811383B2
公开(公告)日：2010-10-12
申请号：US12421051
申请日：2009-04-09
申请人： Matthias Mueller , Markus Finkbeiner , Uwe Sahr , Ingo Schwirtlich , Michael Clauss
发明人： Matthias Mueller , Markus Finkbeiner , Uwe Sahr , Ingo Schwirtlich , Michael Clauss
IPC分类号： C30B11/00 , C30B21/04
CPC分类号： C30B29/06 , C30B11/003 , C30B35/002 , H01L31/04 , H01L31/1804 , Y02E10/546 , Y02P70/521 , Y10T117/10 , Y10T117/102 , Y10T117/108 , Y10T117/1088 , Y10T117/1092
摘要： The device for production of a monocrystalline or a multicrystalline material blank, especially a silicon multicrystalline blank, using the VGF method has a crucible with a rectangular or square cross section. A flat heating device, especially a jacket heater, which generates an inhomogeneous temperature profile, is arranged around the crucible. This temperature profile corresponds to the temperature gradient formed in the center of the crucible. The heat output of the flat heating device decreases from the top to the bottom end of the crucible. The flat heating device includes parallel heating webs, which extend in a meandering course. The heat outputs from the heating webs differ according to their different conductor cross sections. To avoid local overheating in corner areas of the crucible, constrictions of the cross sections of the heating webs are provided at inversion zones of their meandering course.
摘要翻译：使用VGF方法制造单晶或多晶材料坯料，特别是硅多晶坯料的装置具有矩形或正方形横截面的坩埚。在坩埚周围布置有平坦加热装置，特别是产生不均匀温度分布的夹套加热器。该温度曲线对应于在坩埚中心形成的温度梯度。扁平加热装置的热输出从坩埚的顶端向下端减小。平面加热装置包括平行加热腹板，其在曲折的过程中延伸。来自加热腹板的热量输出根据其不同的导体横截面而不同。为了避免在坩埚的拐角区域局部过热，在它们的蜿蜒过程的反转区域处设置加热幅材横截面的收缩。

2. 发明申请

US20090188427A1 Device for making monocrystalline or multicrystalline materials, in particular multicrystalline silicon 有权
标题翻译：用于制造单晶或多晶材料的装置，特别是多晶硅
公开(公告)号：US20090188427A1
公开(公告)日：2009-07-30
申请号：US12421051
申请日：2009-04-09
申请人： Matthias Mueller , Markus Finkbeiner , Uwe Sahr , Ingo Schwirtlich , Michael Clauss
发明人： Matthias Mueller , Markus Finkbeiner , Uwe Sahr , Ingo Schwirtlich , Michael Clauss
IPC分类号： C30B13/16
CPC分类号： C30B29/06 , C30B11/003 , C30B35/002 , H01L31/04 , H01L31/1804 , Y02E10/546 , Y02P70/521 , Y10T117/10 , Y10T117/102 , Y10T117/108 , Y10T117/1088 , Y10T117/1092
摘要： The device for production of a monocrystalline or a multicrystalline material blank, especially a silicon multicrystalline blank, using the VGF method has a crucible with a rectangular or square cross section. A flat heating device, especially a jacket heater, which generates an inhomogeneous temperature profile, is arranged around the crucible. This temperature profile corresponds to the temperature gradient formed in the center of the crucible. The heat output of the flat heating device decreases from the top to the bottom end of the crucible. The flat heating device includes parallel heating webs, which extend in a meandering course. The heat outputs from the heating webs differ according to their different conductor cross sections. To avoid local overheating in corner areas of the crucible, constrictions of the cross sections of the heating webs are provided at inversion zones of their meandering course.
摘要翻译：使用VGF方法制造单晶或多晶材料坯料，特别是硅多晶坯料的装置具有矩形或正方形横截面的坩埚。在坩埚周围布置有平坦加热装置，特别是产生不均匀温度分布的夹套加热器。该温度曲线对应于在坩埚中心形成的温度梯度。扁平加热装置的热输出从坩埚的顶端向下端减小。平面加热装置包括平行加热腹板，其在曲折的过程中延伸。来自加热腹板的热量输出根据其不同的导体横截面而不同。为了避免在坩埚的拐角区域局部过热，在它们的蜿蜒过程的反转区域处设置加热幅材横截面的收缩。

3. 发明授权

US07597756B2 Device and method for the production of monocrystalline or multicrystalline materials, in particular multicrystalline silicon 失效
标题翻译：用于生产单晶或多晶材料的装置和方法，特别是多晶硅
公开(公告)号：US07597756B2
公开(公告)日：2009-10-06
申请号：US11692005
申请日：2007-03-27
申请人： Matthias Mueller , Markus Finkbeiner , Uwe Sahr , Ingo Schwirtlich , Michael Clauss
发明人： Matthias Mueller , Markus Finkbeiner , Uwe Sahr , Ingo Schwirtlich , Michael Clauss
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B11/003 , C30B35/002 , H01L31/04 , H01L31/1804 , Y02E10/546 , Y02P70/521 , Y10T117/10 , Y10T117/102 , Y10T117/108 , Y10T117/1088 , Y10T117/1092
摘要： The method of producing monocrystalline or multicrystalline blanks, especially silicon blanks, by using a vertical-gradient-freeze method, includes providing a crucible with a rectangular or square-shaped cross section and a heating jacket disposed around the crucible, which has a number of flat heating elements with a meandering course disposed on side faces of the crucible. The heating jacket generates an inhomogeneous temperature profile corresponding to a temperature gradient in the center of the crucible. The flat heating elements preferably comprise parallel heating webs, whose heat output is set by varying the conductor cross section. To avoid local overheating in corner areas of the crucible, constrictions of the cross section are provided at inversion zones of the meandering courses of the webs. The flat heating elements can be formed from a plurality of interconnected individual segments.
摘要翻译：通过使用垂直梯度冷冻方法制造单晶或多晶坯料，特别是硅坯料的方法包括提供具有矩形或方形截面的坩埚和设置在坩埚周围的加热套，其具有多个具有设置在坩埚的侧面上的曲折的平面加热元件。加热套产生对应于坩埚中心的温度梯度的不均匀温度曲线。扁平加热元件优选地包括平行加热腹板，其热输出通过改变导体横截面来设定。为了避免在坩埚的拐角区域局部过热，在腹板的蜿蜒过程的反转区域设有横截面的收缩。扁平的加热元件可以由多个相互连接的各个段形成。

4. 发明申请

US20070266931A1 DEVICE AND METHOD FOR THE PRODUCTION OF MONOCRYSTALLINE OR MULTICRYSTALLINE MATERIALS, IN PARTICULAR MULTICRYSTALLINE SILICON 失效
标题翻译：用于生产特殊多晶硅的单晶或多晶材料的装置和方法
公开(公告)号：US20070266931A1
公开(公告)日：2007-11-22
申请号：US11692005
申请日：2007-03-27
申请人： Matthias Mueller , Markus Finkbeiner , Uwe Sahr , Ingo Schwirtlich , Michael Clauss
发明人： Matthias Mueller , Markus Finkbeiner , Uwe Sahr , Ingo Schwirtlich , Michael Clauss
IPC分类号： C30B13/16
CPC分类号： C30B29/06 , C30B11/003 , C30B35/002 , H01L31/04 , H01L31/1804 , Y02E10/546 , Y02P70/521 , Y10T117/10 , Y10T117/102 , Y10T117/108 , Y10T117/1088 , Y10T117/1092
摘要： The invention relates to a device and a method for the production of monocrystalline or multicrystalline materials using the vertical-gradient-freeze method, in particular silicon for applications in photovoltaics. According to the invention a low amount of wastage is achieved in that the cross section of the crucible is polygonal, in particular rectangular or square-shaped. Disposed around the circumference of the crucible there is a flat or planar heating element, in particular a jacket heater, which generates an inhomogeneous temperature profile. This corresponds to the temperature gradient formed in the centre of the crucible. The heat output of the flat heating element decreases going from the top end to the bottom end of the crucible. The flat heating element comprises a plurality of parallel heating webs, extending in a vertical or horizontal meandering course. The heat output from the webs is set by varying the conductor cross section. To avoid local overheating in corner areas of the crucible, constrictions of the cross section are provided at inversion zones of the meandering courses of the webs. The flat heating element can be formed from a plurality of interconnected individual segments.
摘要翻译：本发明涉及使用垂直梯度冷冻法，特别是用于光伏发电的硅的单晶或多晶材料的生产的装置和方法。根据本发明，实现了少量的浪费，其中坩埚的横截面是多边形的，特别是矩形或正方形。围绕坩埚的圆周布置有平坦或平面的加热元件，特别是夹套加热器，其产生不均匀的温度分布。这对应于在坩埚中心形成的温度梯度。扁平加热元件的热输出从坩埚的顶端到底端减小。扁平加热元件包括多个平行的加热幅材，其在垂直或水平的曲折过程中延伸。通过改变导体横截面来设定来自腹板的热量输出。为了避免在坩埚的拐角区域局部过热，在腹板的蜿蜒过程的反转区域设有横截面的收缩。扁平加热元件可以由多个相互连接的各个部分形成。

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