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1. 发明授权

US07851323B2 Phase change material with filament electrode 有权
标题翻译：相变材料与灯丝电极
公开(公告)号：US07851323B2
公开(公告)日：2010-12-14
申请号：US12500659
申请日：2009-07-10
申请人： Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Alejandro G. Schrott , Gerhard Ingmar Meijer
发明人： Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Alejandro G. Schrott , Gerhard Ingmar Meijer
IPC分类号： H01L21/06 , H01L21/16
CPC分类号： H01L45/141 , G11C13/0004 , G11C13/0007 , G11C2213/52 , H01L45/06 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/145
摘要： The present invention, in one embodiment, provides a memory device that includes a phase change memory cell; a first electrode; and a layer of filamentary resistor material positioned between the phase change memory cell and the first electrode, wherein at least one bistable conductive filamentary pathway is present in at least a portion of the layer of filamentary resistor material that provides electrical communication between the phase change memory cell and the first electrode.
摘要翻译：本发明在一个实施例中提供了一种包括相变存储单元的存储器件; 第一电极; 以及位于所述相变存储器单元和所述第一电极之间的丝状电阻材料层，其中在所述丝状电阻器材料层的至少一部分中存在至少一个双稳态导电丝状通道，其提供所述相变存储器电池和第一电极。

2. 发明申请

US20090275168A1 PHASE CHANGE MATERIAL WITH FILAMENT ELECTRODE 有权
标题翻译：具有电极的相变材料
公开(公告)号：US20090275168A1
公开(公告)日：2009-11-05
申请号：US12500659
申请日：2009-07-10
申请人： Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Alejandro G. Schrott , Gerhard Ingmar Meijer
发明人： Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Alejandro G. Schrott , Gerhard Ingmar Meijer
IPC分类号： H01L21/06 , H01L21/16
CPC分类号： H01L45/141 , G11C13/0004 , G11C13/0007 , G11C2213/52 , H01L45/06 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/145
摘要： The present invention, in one embodiment, provides a memory device that includes a phase change memory cell; a first electrode; and a layer of filamentary resistor material positioned between the phase change memory cell and the first electrode, wherein at least one bistable conductive filamentary pathway is present in at least a portion of the layer of filamentary resistor material that provides electrical communication between the phase change memory cell and the first electrode.
摘要翻译：本发明在一个实施例中提供了一种包括相变存储单元的存储器件; 第一电极; 以及位于所述相变存储器单元和所述第一电极之间的丝状电阻材料层，其中在所述丝状电阻器材料层的至少一部分中存在至少一个双稳态导电丝状通道，其提供所述相变存储器电池和第一电极。

3. 发明授权

US07560721B1 Phase change material with filament electrode 有权
标题翻译：相变材料与灯丝电极
公开(公告)号：US07560721B1
公开(公告)日：2009-07-14
申请号：US12035237
申请日：2008-02-21
申请人： Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Alejandro G. Schrott , Gerhard Ingmar Meijer
发明人： Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Alejandro G. Schrott , Gerhard Ingmar Meijer
IPC分类号： H01L47/00
CPC分类号： H01L45/141 , G11C13/0004 , G11C13/0007 , G11C2213/52 , H01L45/06 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/145
摘要： The present invention, in one embodiment, provides a memory device that includes a phase change memory cell; a first electrode; and a layer of filamentary resistor material positioned between the phase change memory cell and the first electrode, wherein at least one bistable conductive filamentary pathway is present in at least a portion of the layer of filamentary resistor material that provides electrical communication between the phase change memory cell and the first electrode.
摘要翻译：本发明在一个实施例中提供了一种包括相变存储单元的存储器件; 第一电极; 以及位于所述相变存储器单元和所述第一电极之间的丝状电阻材料层，其中在所述丝状电阻器材料层的至少一部分中存在至少一个双稳态导电丝状通道，其提供所述相变存储器电池和第一电极。

4. 发明授权

US08470676B2 Programmable element, and memory device or logic circuit 有权
标题翻译：可编程元件，存储器件或逻辑电路
公开(公告)号：US08470676B2
公开(公告)日：2013-06-25
申请号：US12350469
申请日：2009-01-08
申请人： Siegfried F. Karg , Gerhard Ingmar Meijer
发明人： Siegfried F. Karg , Gerhard Ingmar Meijer
IPC分类号： H01L21/8236
CPC分类号： H01L29/24 , H01L29/78 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/146 , H01L45/147
摘要： A multi-terminal programmable element. The programmable element includes a source electrode and a drain electrode on a base. The programmable element includes reference voltage contact that is not in contact with the source or drain electrode. The base includes a transition-metal oxide with oxygen vacancies for drifting under an applied electric field. Further, materials of the source electrode and the base are selected such that an interface of a source and/or drain electrode material and the transition metal oxide base material forms an energy barrier for electron injection from the electrode into the base material. The energy barrier has a height that depends on an oxygen vacancy concentration of the base material. Four non-volatile states are programmable into the programmable element.
摘要翻译：多端子可编程元件。可编程元件包括基极上的源电极和漏电极。可编程元件包括不与源极或漏电极接触的参考电压接触。基底包括具有氧空位的过渡金属氧化物，用于在施加的电场下漂移。此外，源极和基极的材料被选择为使得源极和/或漏极电极材料和过渡金属氧化物基底材料的界面形成用于从电极注入基底材料的电子注入的能量势垒。能量势垒的高度取决于基材的氧空位浓度。四个非易失性状态可编程到可编程元件中。

5. 发明授权

US08279665B2 Memory cell and select element 有权
标题翻译：存储单元和选择元素
公开(公告)号：US08279665B2
公开(公告)日：2012-10-02
申请号：US12949047
申请日：2010-11-18
申请人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
发明人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
IPC分类号： G11C11/00
CPC分类号： G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/1683 , H01L45/1691
摘要： In accordance with an aspect of the present disclosure, a memory cell (1) or select element is provided. The element includes an ion conductor element (3) formed of a ion conductor material with mobile metal ions, a first electrically conducing electrode (4) in electrical contact with the ion conductor element, and a second electrically conducting electrode (6) in electrical contact with the ion conductor element, so that the memory cell or select element is programmable by applying an electrical voltage between the first electrode and the second electrode that causes the metal ions to be influenced so that an electrical resistance across the ion conductor element is caused to vary, for example because a metallic protrusion (7) is caused to grow or decompose. In contrast to prior art approaches, the ion conductor element has a shape that is asymmetrical with respect to an exchange of the first electrode (4) and the second electrode (6) for each other.
摘要翻译：根据本公开的一个方面，提供了存储单元（1）或选择元件。该元件包括由离子导体材料与移动金属离子形成的离子导体元件（3），与离子导体元件电接触的第一导电电极（4）和电接触的第二导电电极（6）通过在第一电极和第二电极之间施加电压来使存储单元或选择元件可编程，从而使金属离子受到影响，从而使离子导体元件的电阻达到变化，例如因为使金属突起（7）生长或分解。与现有技术的方法相比，离子导体元件具有相对于第一电极（4）和第二电极（6）彼此交换的不对称的形状。

6. 发明授权

US07897957B2 Non-volatile resistance switching memory 有权
公开(公告)号：US07897957B2
公开(公告)日：2011-03-01
申请号：US12541411
申请日：2009-08-14
申请人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
发明人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
IPC分类号： H01L47/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01L21/31691 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625
摘要： A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.

7. 发明申请

US20090305487A1 NON-VOLATILE RESISTANCE SWITCHING MEMORY 有权
公开(公告)号：US20090305487A1
公开(公告)日：2009-12-10
申请号：US12541411
申请日：2009-08-14
申请人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
发明人： Rolf Allenspach , Johannes G. Bednorz , Gerhard Ingmar Meijer , Chung Hon Lam , Richard Stutz , Daniel Widmer
IPC分类号： H01L21/20
CPC分类号： G11C13/0007 , G11C2213/31 , H01L21/31691 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625
摘要： A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.

8. 发明申请

US20090179245A1 MEMORY CELL AND MEMORY DEVICE 有权
标题翻译：存储单元和存储器件
公开(公告)号：US20090179245A1
公开(公告)日：2009-07-16
申请号：US12353315
申请日：2009-01-14
申请人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
发明人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
IPC分类号： H01L29/82 , H01L29/94
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： A programmable magnetoresistive memory cell. The memory cell has a magnetic element that includes a first and a second ferromagnetic layer. The first and second ferromagnetic layers are separated by a non-ferromagnetic and preferably electrically insulating spacer layer. The data bit is read out by measuring the electrical resistance across the magnetic element. The memory cell further includes: a third ferromagnetic layer having a well-defined magnetization direction and a resistance switching material having a carrier density. The carrier density can be altered by causing an ion concentration to become altered by means of an applied electrical voltage signal. Thus, the carrier density can be switched between a first and second state.
摘要翻译：可编程磁阻存储单元。存储单元具有包括第一和第二铁磁层的磁性元件。第一铁磁层和第二铁磁层由非铁磁性并且优选电绝缘间隔层分开。通过测量磁性元件两端的电阻来读出数据位。存储单元还包括：具有明确限定的磁化方向的第三铁磁层和具有载流子密度的电阻切换材料。可以通过使施加的电压信号使离子浓度变化而改变载流子密度。因此，可以在第一和第二状态之间切换载流子密度。

9. 发明申请

US20090174428A1 PROGRAMMABLE ELEMENT, AND MEMORY DEVICE OR LOGIC CIRCUIT 有权
标题翻译：可编程元件，以及存储器件或逻辑电路
公开(公告)号：US20090174428A1
公开(公告)日：2009-07-09
申请号：US12350469
申请日：2009-01-08
申请人： Siegfried F. Karg , Gerhard Ingmar Meijer
发明人： Siegfried F. Karg , Gerhard Ingmar Meijer
IPC分类号： H03K19/173 , H01L47/00 , H01L29/66
CPC分类号： H01L29/24 , H01L29/78 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/146 , H01L45/147
摘要： A multi-terminal programmable element. The programmable element includes a source electrode and a drain electrode on a base. The programmable element includes reference voltage contact that is not in contact with the source or drain electrode. The base includes a transition-metal oxide with oxygen vacancies for drifting under an applied electric field. Further, materials of the source electrode and the base are selected such that an interface of a source and/or drain electrode material and the transition metal oxide base material forms an energy barrier for electron injection from the electrode into the base material. The energy barrier has a height that depends on an oxygen vacancy concentration of the base material. Four non-volatile states are programmable into the programmable element.
摘要翻译：多端子可编程元件。可编程元件包括基极上的源电极和漏电极。可编程元件包括不与源极或漏电极接触的参考电压接触。基底包括具有氧空位的过渡金属氧化物，用于在施加的电场下漂移。此外，源极和基极的材料被选择为使得源极和/或漏极电极材料和过渡金属氧化物基底材料的界面形成用于从电极注入基底材料的电子注入的能量势垒。能量势垒的高度取决于基材的氧空位浓度。四个非易失性状态可编程到可编程元件中。

10. 发明授权

US08405124B2 Logic element, and integrated circuit or field programmable gate array 有权
标题翻译：逻辑元件，集成电路或现场可编程门阵列
公开(公告)号：US08405124B2
公开(公告)日：2013-03-26
申请号：US12350329
申请日：2009-01-08
申请人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
发明人： Siegfried Friedrich Karg , Gerhard Ingmar Meijer
IPC分类号： H01L29/66
CPC分类号： H03K19/1778 , H01L27/11803 , H03K19/17728
摘要： A complementary logic element including first and second transistor elements. The first and second gate electrodes of the two transistor elements are electrically parallel to form a common gate. Both the coupling layers of the first and the second transistor element include a resistance switching material, a conductivity of which may be altered by causing an ion concentration to alter if an electrical voltage signal of an appropriate polarity is applied. The first and second transistor elements also include an ion conductor layer that is capable of accepting ions from the coupling layer and of releasing ions into the coupling layer. The coupling layers and ion conductor layers are such that the application of an electrical signal of a given polarity to the gate enhances the electrical conductivity of the first coupling layer and diminishes the electrical conductivity of the second, or vice versa.
摘要翻译：互补逻辑元件，包括第一和第二晶体管元件。两个晶体管元件的第一和第二栅极电极并联以形成公共栅极。第一和第二晶体管元件的耦合层都包括电阻切换材料，如果施加了适当极性的电压信号，其电导率可以通过使离子浓度改变而改变。第一和第二晶体管元件还包括能够接受来自耦合层的离子并将离子释放到耦合层中的离子导体层。耦合层和离子导体层使得向栅极施加给定极性的电信号增强了第一耦合层的电导率并且减小了第二耦合层的电导率，反之亦然。

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