专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070032009A1 Semiconductor devices having strained dual channel layers 有权
标题翻译：具有应变双通道层的半导体器件
公开(公告)号：US20070032009A1
公开(公告)日：2007-02-08
申请号：US11544245
申请日：2006-10-06
申请人： Matthew Currie , Anthony Lochtefeld , Christopher Leitz , Eugene Fitzgerald
发明人： Matthew Currie , Anthony Lochtefeld , Christopher Leitz , Eugene Fitzgerald
IPC分类号： H01L21/8238
CPC分类号： H01L29/66545 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/823807 , H01L21/823814 , H01L29/1054 , H01L29/66628 , H01L29/66636 , H01L29/66651 , H01L29/66916 , H01L29/802 , Y10S438/938
摘要： A semiconductor structure includes a strain-inducing substrate layer having a germanium concentration of at least 10 atomic %. The semiconductor structure also includes a compressively strained layer on the strain-inducing substrate layer. The compressively strained layer has a germanium concentration at least approximately 30 percentage points greater than the germanium concentration of the strain-inducing substrate layer, and has a thickness less than its critical thickness. The semiconductor structure also includes a tensilely strained layer on the compressively strained layer. The tensilely strained layer may be formed from silicon having a thickness less than its critical thickness. A method for fabricating a semiconductor structure includes providing a substrate, providing a compressively strained semiconductor on the substrate, depositing a tensilely strained semiconductor adjacent the substrate until a thickness of a first region of the tensilely strained semiconductor is greater than a thickness of a second region of the tensilely strained semiconductor, forming a n-channel device on the first region, and forming a p-channel device on the second region.
摘要翻译：半导体结构包括锗浓度为至少10原子％的应变诱导基底层。半导体结构还包括在应变诱导基底层上的压缩应变层。压缩应变层的锗浓度比应变诱导基底层的锗浓度大至少约30个百分点，并且具有小于其临界厚度的厚度。半导体结构还包括在压缩应变层上的拉伸应变层。拉伸应变层可以由厚度小于其临界厚度的硅形成。一种用于制造半导体结构的方法包括：提供衬底，在衬底上提供压缩应变半导体，在衬底附近沉积拉伸应变半导体，直到拉伸应变半导体的第一区域的厚度大于第二区域的厚度的拉伸应变半导体，在第一区域上形成n沟道器件，并在第二区域上形成p沟道器件。

2. 发明申请

US20080070397A1 Methods for Selective Placement of Dislocation Arrays 有权
标题翻译：位错阵列选择性放置方法
公开(公告)号：US20080070397A1
公开(公告)日：2008-03-20
申请号：US11945130
申请日：2007-11-26
申请人： Anthony Lochtefeld , Christopher Leitz , Matthew Currie , Mayank Bulsara
发明人： Anthony Lochtefeld , Christopher Leitz , Matthew Currie , Mayank Bulsara
IPC分类号： H01L21/44
CPC分类号： C30B25/18 , H01L21/0245 , H01L21/02463 , H01L21/0251 , H01L21/02532 , H01L21/76251 , H01L21/823807 , H01L29/1054 , H01L29/665 , H01L29/6659 , H01L29/66628 , H01L29/7834 , Y10S438/938
摘要： Misfit dislocations are selectively placed in layers formed over substrates. Thicknesses of layers may be used to define distances between misfit dislocations and surfaces of layers formed over substrates, as well as placement of misfit dislocations and dislocation arrays with respect to devices subsequently formed on the layers.
摘要翻译：选择性地将位错配置在衬底上形成的层中。可以使用层的厚度来限定失配位错与在衬底上形成的层的表面之间的距离，以及相对于随后形成在层上的器件的位错和位错阵列的位置。

3. 发明申请

US20110095363A1 Semiconductor Structures Employing Strained Material Layers with Defined Impurity Gradients and Methods for Fabricating Same 有权
标题翻译：采用具有定义杂质梯度的应变材料层的半导体结构及其制造方法
公开(公告)号：US20110095363A1
公开(公告)日：2011-04-28
申请号：US12982101
申请日：2010-12-30
申请人： Matthew Currie , Anthony Lochtefeld , Richard Hammond , Eugene Fitzgerald
发明人： Matthew Currie , Anthony Lochtefeld , Richard Hammond , Eugene Fitzgerald
IPC分类号： H01L29/78
CPC分类号： H01L29/1054 , H01L29/105 , H01L29/161 , H01L29/36 , H01L29/66477 , H01L29/66545 , H01L29/66651 , H01L29/78 , H01L29/7842 , Y10S438/926
摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.
摘要翻译：包括具有无杂质区域的应变材料层的半导体结构和器件及其制造方法。应变材料层的某些区域保持没有可以从半导体的相邻部分相互扩散的杂质。当杂质存在于应变材料层的某些区域中时，器件性能下降。通过采用具有所描述或者根据所描述的步骤制造的特征的半导体结构和器件（例如，场效应晶体管或“FET”），器件操作被增强。

4. 发明申请

US20050212061A1 Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes 有权
标题翻译：通过使用分裂面形成绝缘体上半导体器件结构的方法
公开(公告)号：US20050212061A1
公开(公告)日：2005-09-29
申请号：US11127508
申请日：2005-05-12
申请人： Thomas Langdo , Matthew Currie , Richard Hammond , Anthony Lochtefeld , Eugene Fitzgerald
发明人： Thomas Langdo , Matthew Currie , Richard Hammond , Anthony Lochtefeld , Eugene Fitzgerald
IPC分类号： H01L21/20 , H01L21/331 , H01L21/336 , H01L21/337 , H01L21/762 , H01L21/84 , H01L27/12 , H01L29/786 , H01L29/76
CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译：应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

5. 发明申请

US20070293009A1 SEMICONDUCTOR STRUCTURES EMPLOYING STRAINED MATERIAL LAYERS WITH DEFINED IMPURITY GRADIENTS AND METHODS FOR FABRICATING SAME 有权
标题翻译：使用定义的污染物等级的应变材料层的半导体结构及其制造方法
公开(公告)号：US20070293009A1
公开(公告)日：2007-12-20
申请号：US11848642
申请日：2007-08-31
申请人： Matthew Currie , Anthony Lochtefeld , Richard Hammond , Eugene Fitzgerald
发明人： Matthew Currie , Anthony Lochtefeld , Richard Hammond , Eugene Fitzgerald
IPC分类号： H01L21/336
CPC分类号： H01L29/1054 , H01L29/105 , H01L29/161 , H01L29/36 , H01L29/66477 , H01L29/66545 , H01L29/66651 , H01L29/78 , H01L29/7842 , Y10S438/926
摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.
摘要翻译：包括具有无杂质区域的应变材料层的半导体结构和器件及其制造方法。应变材料层的某些区域保持没有可以从半导体的相邻部分相互扩散的杂质。当杂质存在于应变材料层的某些区域中时，器件性能下降。通过采用具有所描述或者根据所描述的步骤制造的特征的半导体结构和器件（例如，场效应晶体管或“FET”），器件操作被增强。

6. 发明申请

US20060266997A1 Methods for forming semiconductor structures with differential surface layer thicknesses 审中-公开
标题翻译：用于形成具有差的表面层厚度的半导体结构的方法
公开(公告)号：US20060266997A1
公开(公告)日：2006-11-30
申请号：US11498521
申请日：2006-08-03
申请人： Matthew Currie , Anthony Lochtefeld , Eugene Fitzgerald
发明人： Matthew Currie , Anthony Lochtefeld , Eugene Fitzgerald
IPC分类号： H01L31/00
CPC分类号： H01L21/823807 , H01L21/823412 , H01L27/0922
摘要： A semiconductor structure having a substrate with a surface layer including strained silicon. The surface layer has a first region with a first thickness less than a second thickness of a second region. A gate dielectric layer is disposed over a portion of at least the first surface layer region.
摘要翻译：具有具有包括应变硅的表面层的基板的半导体结构。表面层具有第一厚度小于第二区域的第二厚度的第一区域。栅电介质层设置在至少第一表面层区域的一部分上。

7. 发明申请

US20060197125A1 Methods for forming double gate strained-semiconductor-on-insulator device structures 审中-公开
标题翻译：用于形成双栅应变半导体绝缘体上器件结构的方法
公开(公告)号：US20060197125A1
公开(公告)日：2006-09-07
申请号：US11415784
申请日：2006-05-02
申请人： Thomas Langdo , Matthew Currie , Glyn Braithwaite , Richard Hammond , Anthony Lochtefeld , Eugene Fitzgerald
发明人： Thomas Langdo , Matthew Currie , Glyn Braithwaite , Richard Hammond , Anthony Lochtefeld , Eugene Fitzgerald
IPC分类号： H01L21/8234 , H01L29/76 , H01L31/00
CPC分类号： H01L29/785 , H01L21/76254 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/66795 , H01L29/66916 , H01L29/7842 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译：应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

8. 发明申请

US20120086047A1 Semiconductor Structures Employing Strained Material Layers with Defined Impurity Gradients and Methods for Fabricating Same 有权
标题翻译：采用具有定义杂质梯度的应变材料层的半导体结构及其制造方法
公开(公告)号：US20120086047A1
公开(公告)日：2012-04-12
申请号：US13327194
申请日：2011-12-15
申请人： Matthew Currie , Anthony Lochtefeld , Richard Hammond , Eugene Fitzgerald
发明人： Matthew Currie , Anthony Lochtefeld , Richard Hammond , Eugene Fitzgerald
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/1054 , H01L29/105 , H01L29/161 , H01L29/36 , H01L29/66477 , H01L29/66545 , H01L29/66651 , H01L29/78 , H01L29/7842 , Y10S438/926
摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.
摘要翻译：包括具有无杂质区域的应变材料层的半导体结构和器件及其制造方法。应变材料层的某些区域保持没有可以从半导体的相邻部分相互扩散的杂质。当杂质存在于应变材料层的某些区域中时，器件性能下降。通过采用具有所描述或者根据所描述的步骤制造的特征的半导体结构和器件（例如，场效应晶体管或“FET”），器件操作被增强。

9. 发明申请

US20070293003A1 SEMICONDUCTOR STRUCTURES EMPLOYING STRAINED MATERIAL LAYERS WITH DEFINED IMPURITY GRADIENTS AND METHODS FOR FABRICATING SAME 有权
公开(公告)号：US20070293003A1
公开(公告)日：2007-12-20
申请号：US11847721
申请日：2007-08-30
申请人： Matthew Currie , Anthony Lochtefeld , Richard Hammond , Eugene Fitzgerald
发明人： Matthew Currie , Anthony Lochtefeld , Richard Hammond , Eugene Fitzgerald
IPC分类号： H01L21/336
CPC分类号： H01L29/1054 , H01L29/105 , H01L29/161 , H01L29/36 , H01L29/66477 , H01L29/66545 , H01L29/66651 , H01L29/78 , H01L29/7842 , Y10S438/926
摘要： Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced.

10. 发明申请

US20060197123A1 Methods for forming strained-semiconductor-on-insulator bipolar device structures 审中-公开
标题翻译：用于形成应变半导体绝缘体上双极器件结构的方法
公开(公告)号：US20060197123A1
公开(公告)日：2006-09-07
申请号：US11415556
申请日：2006-05-01
申请人： Anthony Lochtefeld , Thomas Langdo , Richard Hammond , Matthew Currie , Glyn Braithwaite , Eugene Fitzgerald
发明人： Anthony Lochtefeld , Thomas Langdo , Richard Hammond , Matthew Currie , Glyn Braithwaite , Eugene Fitzgerald
IPC分类号： H01L21/8234 , H01L29/76 , H01L31/00
CPC分类号： H01L29/785 , H01L21/76254 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/66795 , H01L29/66916 , H01L29/7842 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译：应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式