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1. 发明申请

US20050207073A1 Current-perpendicular-to-plane magnetoresistive sensor with free layer stabilized by in-stact orthogonal magnetic coupling to an antiparallel pinned biasing layer 有权
标题翻译：具有自由层的电流 - 垂直于平面的磁阻传感器通过与反平行的钉扎偏置层的非正交正交磁耦合而稳定
公开(公告)号：US20050207073A1
公开(公告)日：2005-09-22
申请号：US10856102
申请日：2004-05-27
申请人： Matthew Carey , Jeffrey Childress , Kuok Ho , Stefan Maat
发明人： Matthew Carey , Jeffrey Childress , Kuok Ho , Stefan Maat
IPC分类号： G01R33/09 , G11B5/127 , G11B5/33 , G11B5/39 , H01F10/30 , H01F10/32
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/30 , H01F10/3268 , H01F10/3295
摘要： A magnetically-coupled structure has two ferromagnetic layers with their in-plane magnetization directions coupled orthogonally across an electrically-conducting spacer layer that induces the direct orthogonal magnetic coupling. The structure has application for in-stack biasing in a current-perpendicular-to-the-plane (CPP) magnetoresistive sensor. One of the ferromagnetic layers of the structure is an antiparallel-pinned biasing layer and the other ferromagnetic layer is the sensor free layer. The antiparallel-pinned biasing layer has first and second ferromagnetic films separated by an antiferromagnetically-coupling film. An antiferromagnetic layer exchange-couples the first ferromagnetic film of the biasing layer to fix the net moment of the biasing layer parallel to the moment of the sensor pinned layer. This allows a single annealing step to be used to set the magnetization direction of the biasing and pinned layers.
摘要翻译：磁耦合结构具有两个铁磁层，它们的面内磁化方向正交地耦合在导电直接磁耦合的导电间隔层上。该结构具有在电流垂直于平面（CPP）磁阻传感器中的堆叠偏置的应用。结构的铁磁层之一是反平行钉扎的偏置层，另一个铁磁层是传感器自由层。反平行钉扎偏置层具有由反铁磁耦合膜隔开的第一和第二铁磁膜。反铁磁层将偏置层的第一铁磁膜交换耦合，以将偏置层的净矩平行于传感器钉扎层的力矩。这允许使用单个退火步骤来设定偏置和钉扎层的磁化方向。

2. 发明申请

US20060221515A1 Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer 失效
标题翻译：使用倾斜蚀刻底层的磁性读取传感器，用于在自偏压自由层中诱导单轴磁各向异性
公开(公告)号：US20060221515A1
公开(公告)日：2006-10-05
申请号：US11177990
申请日：2005-07-07
申请人： Matthew Carey , Jeffrey Childress , James Nix , Stefan Maat , Ian McFadyen
发明人： Matthew Carey , Jeffrey Childress , James Nix , Stefan Maat , Ian McFadyen
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , G11B5/3932 , H01F10/16 , H01F10/30 , H01F41/306 , H01L43/08 , H01L43/12
摘要： A magnetoresistive sensor having a self biased free layer. The free layer is constructed upon an underlayer that has been treated by a surface texturing process that configures the underlayer with an anisotropic roughness that induces a magnetic anisotropy in the free layer. The treated layer underlying the free layer can be a spacer layer sandwiched between the free layer and pinned layer or can be a separate underlayer formed opposite the spacer layer. Alternatively, the texturing of an underlayer can be used to induce a magnetic anisotropy in a bias layer that is separated from the free layer by an orthogonal coupling layer. This self biasing of the free layer induced by texturing can also be used in conjunction with biasing from a hard-bias structure.
摘要翻译：具有自偏置自由层的磁阻传感器。自由层被构造在已经通过表面纹理化处理处理的底层上，该表面构造过程用在各自自由层中引起磁各向异性的各向异性粗糙度来构造底层。自由层下面的处理层可以是夹在自由层和被钉扎层之间的间隔层，或者可以是与间隔层相对形成的单独的下层。或者，底层的纹理化可以用于在通过正交耦合层与自由层分离的偏压层中引起磁各向异性。由纹理引起的自由层的这种自偏压也可以与来自硬偏压结构的偏压结合使用。

3. 发明申请

US20060218775A1 Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer 失效
标题翻译：用于制造在硬磁性钉扎层中诱导单轴磁各向异性的倾斜蚀刻底层的磁读取传感器的方法
公开(公告)号：US20060218775A1
公开(公告)日：2006-10-05
申请号：US11097546
申请日：2005-03-31
申请人： Matthew Carey , Jeffrey Childress , Eric Fullerton , Stefan Maat
发明人： Matthew Carey , Jeffrey Childress , Eric Fullerton , Stefan Maat
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3932 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A magnetoresistive sensor having a hard magnetic pinning layer with an engineered magnetic anisotropy in a direction substantially perpendicular to the medium facing surface. The hard magnetic pinning layer may be constructed of CoPt, CoPtCr, or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness for example in form of oriented ripples or facets oriented along a direction parallel to the medium facing surface. The anisotropic roughness induces a strong uniaxial magnetic anisotropy substantially perpendicular to the medium facing surface in the hard magnetic pinning layer deposited there over.
摘要翻译：磁阻传感器具有在基本上垂直于介质相对表面的方向上具有工程磁各向异性的硬磁性钉扎层。硬磁性钉扎层可以由CoPt，CoPtCr或一些其他磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。离子束蚀刻已经以相对于法线成一定角度进行，以便引起各向异性粗糙度，例如沿着平行于面向介质的表面的方向取向的定向波纹或面的形式。各向异性粗糙度引起基本上垂直于沉积在其上的硬磁性钉扎层中的面向介质的表面的强单轴磁各向异性。

4. 发明申请

US20070133132A1 Magnetoresitive sensor having magnetic layers with tailored magnetic anisotropy induced by direct ion milling 失效
标题翻译：具有由直接离子研磨引起的具有定制的磁各向异性的磁性层的磁敏传感器
公开(公告)号：US20070133132A1
公开(公告)日：2007-06-14
申请号：US11304033
申请日：2005-12-14
申请人： Matthew Carey , Jeffrey Childress , Stefan Maat
发明人： Matthew Carey , Jeffrey Childress , Stefan Maat
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3932 , G11B5/3163
摘要： A magnetoresistive sensor having a magnetic anisotropy induced in one or both of the free layer and/or pinned layer. The magnetic anisotropy is induced by a surface texture formed in the surface of the magnetic layer of either or both of the free layer or pinned layer. The surface texture is formed by a direct, angled ion mill performed on the surface of the magnetic layer while holding the wafer on a stationary chuck. By applying this ion milling technique, the magnetic anisotropy of the pinned layer can be formed in a first direction (eg. perpendicular to the ABS) while the magnetic anisotropy of the free layer can be formed perpendicular to that of the pinned layer (eg. parallel to the ABS).
摘要翻译：具有在自由层和/或固定层中的一个或两个中诱发的磁各向异性的磁阻传感器。磁各向异性由在自由层或被钉扎层中的任一个或两者的磁性层表面形成的表面纹理引起。表面纹理由在磁性层的表面上执行的直接成角度的离子磨机形成，同时将晶片保持在固定的卡盘上。通过应用这种离子铣削技术，可以沿着第一方向（例如垂直于ABS）形成钉扎层的磁各向异性，同时自由层的磁各向异性可以垂直于被钉扎层的形状形成（例如，平行于ABS）。

5. 发明申请

US20070109692A1 Oblique angle etched underlayers for improved exchange biased structures in a magnetoresitive sensor 失效
标题翻译：斜角蚀刻底层，用于改进磁阻传感器中的交换偏置结构
公开(公告)号：US20070109692A1
公开(公告)日：2007-05-17
申请号：US11283033
申请日：2005-11-17
申请人： Matthew Carey , Jeffrey Childress , James Freitag , Stefan Maat , Mustafa Pinarbasi
发明人： Matthew Carey , Jeffrey Childress , James Freitag , Stefan Maat , Mustafa Pinarbasi
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive sensor having improved pinning field strength. The sensor includes a pinned layer structure pinned by exchange coupling with an antiferromagnetic (AFM) layer. The AFM layer is constructed upon an under layer having treated surface with an anisotropic roughness. The anisotropic roughness, produced by an angled ion etch, results in improved pinning strength. The underlayer may include a seed layer and a thin layer of crystalline material such as PtMn formed over the seed layer. The magnetic layer may include a first sub-layer of NiFeCr and a second sub-layer of NiFe formed there over. The present invention also includes a magnetoresistive sensor having a magnetic layer deposited on an underlayer (such as a non-magnetic spacer) having a surface treated with an anisotropic texture. An AFM layer is then deposited over the magnetic layer. The magnetic layer is then strongly pinned by a combination of exchange coupling with the AFM layer and a strong anisotropy provided by the surface texture of the underlayer. Such a structure can be used for example in a sensor having a pinned layer structure formed above the free layer, or in a sensor having an in stack bias structure.
摘要翻译：具有改善的钉扎场强的磁阻传感器。传感器包括通过与反铁磁（AFM）层的交换耦合固定的钉扎层结构。 AFM层被构造在具有各向异性粗糙度的处理表面的底层上。通过角度离子蚀刻产生的各向异性粗糙度导致改善的钉扎强度。底层可以包括种子层和在种子层上形成的诸如PtMn的薄层结晶材料。磁性层可以包括NiFeCr的第一子层和在其上形成的NiFe的第二子层。本发明还包括具有沉积在具有用各向异性纹理处理的表面的底层（例如非磁性间隔物）上的磁性层的磁阻传感器。然后将AFM层沉积在磁性层上。然后通过与AFM层的交换耦合的组合强烈地钉住磁性层，并且由底层的表面纹理提供强烈的各向异性。这种结构可以用于例如具有形成在自由层上方的钉扎层结构的传感器中，或者在具有堆叠偏压结构的传感器中。

6. 发明申请

US20070097558A1 Current-perpendicular-to-the-plane spin-valve (CPP-SV) sensor with current-confining apertures concentrated near the sensing edge 失效
标题翻译：电流垂直于平面的自旋阀（CPP-SV）传感器，电流限制孔径集中在感应边缘附近
公开(公告)号：US20070097558A1
公开(公告)日：2007-05-03
申请号：US11268275
申请日：2005-11-03
申请人： Matthew Carey , Jeffrey Childress , Stefan Maat , Neil Smith
发明人： Matthew Carey , Jeffrey Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3906
摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an insulating layer with at least one aperture that confines the flow of sense current through the active region. The apertures are located closer to the sensing edge of the sensor than to the back edge of the sensor. The aperture (or apertures) are patterned by e-beam lithography, which enables the number, size and location of the apertures to be precisely controlled. The insulating layer may be located inside the electrically conductive nonmagnetic spacer layer, or outside of the magnetically active layers of the spin-valve. More than one insulating layer may be included in the stack to define conductive current paths where the apertures of the insulating layers overlap. The apertures are filled with electrically conductive material, typically the same material as that used for the spacer layer.
摘要翻译：电流 - 垂直于平面的自旋阀（CPP-SV）磁阻传感器具有绝缘层，其具有至少一个限制感应电流通过有源区域的孔径。孔比传感器的后边缘更靠近传感器的感测边缘。孔（或孔）通过电子束光刻被图案化，这使得能够精确地控制孔的数量，尺寸和位置。绝缘层可以位于导电非磁性间隔层内部，或位于自旋阀的磁性有效层的外部。堆叠中可以包括多于一个绝缘层，以限定绝缘层的孔重叠的导电电流路径。孔被填充有导电材料，通常与用于间隔层的材料相同。

7. 发明申请

US20070047155A1 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned structure having selected additive elements 失效
标题翻译：电流垂直于平面（CPP）磁阻传感器，具有选择的添加元素的反平行销钉结构
公开(公告)号：US20070047155A1
公开(公告)日：2007-03-01
申请号：US11216746
申请日：2005-08-30
申请人： Matthew Carey , Jeffrey Childress , Stefan Maat
发明人： Matthew Carey , Jeffrey Childress , Stefan Maat
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , G11B5/3906
摘要： A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an improved antiparallel (AP) pinned structure, i.e., a structure with first (AP1) and second (AP2) ferromagnetic layers separated by a nonmagnetic antiparallel coupling (APC) layer with the magnetization directions of AP1 and AP2 oriented substantially antiparallel. The AP2 ferromagnetic layer (the layer in contact with the SV spacer layer) is an alloy of a ferromagnetic material and one or more additive elements of Cu, Au and Ag. The additive elements reduce the magnetic moment of the AP2 layer, which enables its thickness to be increased so that its magnetic moment remains close to the magnetic moment of the AP1 ferromagnetic layer. The thicker AP2 layer allows for more bulk spin-dependent scattering of electrons which increases the magnetoresistance of the sensor. An annealed AP2 layer results in more segregation of the ferromagnetic material grains and the additive element grains, and thus a further improvement in magnetoresistance as a result of more interfacial scattering of electrons.
摘要翻译：电流垂直于平面的自旋阀（CPP-SV）磁阻传感器具有改进的反平行（AP）钉扎结构，即，具有由非磁性分离的第一（AP1）和第二（AP2）铁磁层的结构反向平行耦合（APC）层，其AP1和AP2的磁化方向基本上反平行取向。 AP2铁磁层（与SV间隔层接触的层）是铁磁材料和Cu，Au和Ag的一种或多种添加元素的合金。添加元素降低了AP2层的磁矩，使其厚度增加，使其磁矩保持接近AP1铁磁层的磁矩。较厚的AP2层允许电子的更多的体自旋依赖性散射，这增加了传感器的磁阻。退火的AP2层导致铁磁材料晶粒和添加元素晶粒的更多偏析，并且因此由于电子的更多的界面散射而导致的磁阻的进一步改善。

8. 发明申请

US20060222112A1 Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers 失效
标题翻译：使用倾斜蚀刻底层的磁性读取传感器，用于诱导硬磁偏置层中的单轴磁各向异性
公开(公告)号：US20060222112A1
公开(公告)日：2006-10-05
申请号：US11096636
申请日：2005-03-31
申请人： Matthew Carey , Jeffrey Childress , Eric Fullerton , Stefan Maat
发明人： Matthew Carey , Jeffrey Childress , Eric Fullerton , Stefan Maat
IPC分类号： H04L27/06
CPC分类号： B82Y25/00 , G11B5/3932 , H01F10/16 , H01F10/30 , H01F10/3272 , H01F41/306 , H01L43/08 , H01L43/12
摘要： A magnetoresistive sensor having a hard bias layer with an engineered magnetic anisotropy in a direction substantially parallel with the medium facing surface. The hard bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness on its surface for example in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic bias layers deposited there over.
摘要翻译：磁阻传感器具有在与介质面对表面基本平行的方向上具有工程磁各向异性的硬偏置层。硬偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。已经以相对于正常的角度执行离子束蚀刻，以便在其表面上引起各向异性的粗糙度，例如以定向的波纹或小面的形式。各向异性粗糙度在其上沉积的硬磁偏置层中引起基本平行于面向介质的表面的单轴磁各向异性。

9. 发明申请

US20060221514A1 Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer 有权
标题翻译：采用倾斜蚀刻底层的磁性读取传感器，用于诱导硬磁性钉扎层中的单轴磁各向异性
公开(公告)号：US20060221514A1
公开(公告)日：2006-10-05
申请号：US11097920
申请日：2005-03-31
申请人： Matthew Carey , Jeffrey Childress , Eric Fullerton , Stefan Maat
发明人： Matthew Carey , Jeffrey Childress , Eric Fullerton , Stefan Maat
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/3903 , B82Y25/00 , B82Y40/00 , G11B5/3932 , H01F10/16 , H01F10/30 , H01F10/3272 , H01F10/3286 , H01F41/308 , H01L43/08
摘要： A magnetoresistive sensor having a hard magnetic pinning layer with an engineered magnetic anisotropy in a direction substantially perpendicular to the medium facing surface. The hard magnetic pinning layer may be constructed of CoPt, CoPtCr, or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness for example in form of oriented ripples or facets oriented along a direction parallel to the medium facing surface. The anisotropic roughness induces a strong uniaxial magnetic anisotropy substantially perpendicular to the medium facing surface in the hard magnetic pinning layer deposited there over.
摘要翻译：磁阻传感器具有在基本上垂直于介质相对表面的方向上具有工程磁各向异性的硬磁性钉扎层。硬磁性钉扎层可以由CoPt，CoPtCr或一些其他磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。已经以相对于法线的角度执行离子束蚀刻，以便例如以沿着平行于面向介质的表面的方向取向的定向波纹或小面的形式引起各向异性的粗糙度。各向异性粗糙度引起基本上垂直于沉积在其上的硬磁性钉扎层中的面向介质的表面的强单轴磁各向异性。

10. 发明申请

US20060221513A1 Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer 失效
标题翻译：使用倾斜蚀刻底层的磁性读取传感器，用于在硬磁堆叠偏压层中诱导单轴磁各向异性
公开(公告)号：US20060221513A1
公开(公告)日：2006-10-05
申请号：US11097638
申请日：2005-03-31
申请人： Matthew Carey , Jeffrey Childress , Eric Fullerton , Stefan Maat
发明人： Matthew Carey , Jeffrey Childress , Eric Fullerton , Stefan Maat
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/3932 , B82Y25/00 , B82Y40/00 , H01F10/16 , H01F10/30 , H01F10/3272 , H01F10/3286 , H01F41/308 , H01L43/08
摘要： A magnetoresistive sensor having an in stack bias layer with an engineered magnetic anisotropy in a direction parallel with the medium facing surface. The in-stack bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to form anisotropic roughness in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic in-stack bias layer deposited thereover.
摘要翻译：磁阻传感器具有在与介质面向表面平行的方向上具有工程磁各向异性的堆叠偏置层。叠层偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且沉积在已被离子束蚀刻的底层上。已经以相对于正常的角度执行离子束蚀刻，以便形成定向的波纹或小面的各向异性的粗糙度。各向异性粗糙度在其上沉积的硬磁堆叠偏压层中引起基本平行于面向介质的表面的单轴磁各向异性。

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