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    • 1. 发明授权
    • Liquid crystal display device
    • 液晶显示装置
    • US06795050B1
    • 2004-09-21
    • US09383923
    • 1999-08-26
    • Masumitsu InoToshikazu MaekawaYoshiharu NakajimaHiroaki Ichikawa
    • Masumitsu InoToshikazu MaekawaYoshiharu NakajimaHiroaki Ichikawa
    • G09G336
    • G09G3/3688G09G3/3614G09G3/3648G09G2310/0297G09G2320/0209
    • An active-matrix-type liquid crystal display device supplies signal potentials to signal lines of a liquid crystal display panel according to a time-division drive method using time-division switches. The low-level potential of select pulses to be supplied from a select pulse generating circuit to CMOS analog switches of the time-division switches is set to be lower than the low-level potential of a signal potential output from a horizontal drive circuit. With this arrangement, even if the signal potential of a non-selected signal line is decreased due to the crosstalk of a signal potential from a selected signal line to the non-selected signal line, the generation of insufficient contrast and non-uniformity of the luminance in the horizontal direction can be prevented. As a consequence, a high image quality is maintained.
    • 根据使用时分开关的时分驱动方法,有源矩阵型液晶显示装置向液晶显示面板的信号线提供信号电位。 将从选择脉冲发生电路提供的选择脉冲的低电平电位设置为低于从水平驱动电路输出的信号电位的低电位电位。 利用这种布置,即使由于从所选择的信号线到未选择的信号线的信号电位的串扰,未被选择的信号线的信号电位降低,产生不足的对比度和不均匀性 可以防止水平方向的亮度。 因此,保持高图像质量。
    • 4. 发明授权
    • Process for fabricating thin film semiconductor device
    • 薄膜半导体器件制造工艺
    • US06602744B1
    • 2003-08-05
    • US08878588
    • 1997-06-19
    • Masumitsu InoToshikazu Maekawa
    • Masumitsu InoToshikazu Maekawa
    • H01L2100
    • H01L21/02686H01L21/02532H01L21/02595H01L21/2026H01L27/1214H01L27/1222H01L27/1285H01L29/66757H01L29/66765H01L29/78633
    • A process of fabricating a thin film semiconductor device includes the steps of: forming a semiconducting thin film on an insulating substrate; annealing the semiconducting thin film by irradiating a laser beam thereon, thereby crystallizing the semiconducting thin film; and integratedly forming thin film transistors, each including the semiconducting thin film as an active layer, with a specific arrangement pitch. In the laser annealing step, a pulsed laser beam formed in a band-shape is intermittently irradiated onto the insulating substrate and it is simultaneously moved relative to the insulating substrate in the lateral direction with a specific movement pitch to form partially overlapping regions irradiated with the laser beam between the irradiated regions. In this case, the movement pitch of the laser beam is set at a value equal to an arrangement pitch of the thin film transistors or at a value larger by a factor of an integer than the arrangement pitch, and the insulating substrate is previously positioned such that any one of the boundaries of the partially overlapped regions irradiated with the laser beam is not overlapped on a channel region of each thin film transistor.
    • 制造薄膜半导体器件的工艺包括以下步骤:在绝缘衬底上形成半导体薄膜; 通过在其上照射激光束来对半导体薄膜进行退火,从而使半导体薄膜结晶化; 并且以特定排列间距将包含半导体薄膜作为有源层的薄膜晶体管集成形成。 在激光退火步骤中,将形成为带状的脉冲激光束间歇地照射到绝缘基板上,并且以相对于绝缘基板在横向方向上以特定的移动间距同时移动,以形成部分重叠的区域 照射区域之间的激光束。 在这种情况下,将激光束的移动间距设定为与薄膜晶体管的配置间距相等的值,或者设定为比配置间距大的整数倍的值,将绝缘基板预先定位成 用激光束照射的部分重叠区域的边界中的任何一个不在每个薄膜晶体管的沟道区上重叠。
    • 5. 发明授权
    • Laser annealing apparatus
    • 激光退火装置
    • US06759628B1
    • 2004-07-06
    • US09678459
    • 2000-10-03
    • Masumitsu InoToshikazu Maekawa
    • Masumitsu InoToshikazu Maekawa
    • H01L2176
    • H01L27/1274H01L27/1214H01L29/66757H01L29/66765H01L29/78633
    • A laser annealing apparatus for fabricating a thin film semiconductor device integratedly formed with thin film transistors each of which includes a semiconducting thin film formed on the surface of an insulating substrate spread in longitudinal and lateral directions and then crystallized. A band-shaped pulsed laser beam irradiates the insulating substrate along the longitudinal direction. The laser beam is simultaneously moved in the lateral direction with a specific movement pitch while partially overlapping regions irradiated with the laser beam. The movement pitch of the laser beam is set at a value equal to an arrangement pitch of the thin film transistors or at a value larger by a factor of an integer than the arrangement pitch. The insulating substrate is previously positioned such that the boundaries of the partially overlapped irradiated regions are not overlapped on a channel region of any of the thin film transistors.
    • 一种用于制造与薄膜晶体管整体形成的薄膜半导体器件的激光退火装置,每个薄膜晶体管包括形成在绝缘基片的表面上的纵向和横向的半导体薄膜,然后结晶。 带状脉冲激光束沿纵向照射绝缘基板。 激光束以特定的运动间距在横向方向上同时移动,同时用激光束照射的部分重叠区域。 将激光束的移动间距设定为与薄膜晶体管的配置间距相等的值,或者设定为比排列间距大的整数倍的值。 绝缘基板预先定位成使得部分重叠的照射区域的边界不重叠在任何薄膜晶体管的沟道区上。
    • 10. 发明授权
    • Active matrix display device and its driving method
    • 主动矩阵显示装置及其驱动方法
    • US5764207A
    • 1998-06-09
    • US423862
    • 1995-04-18
    • Toshikazu MaekawaKatsuhide Uchino
    • Toshikazu MaekawaKatsuhide Uchino
    • G02F1/133G09G3/20G09G3/36
    • G09G3/3688G09G3/3648G09G2310/0248G09G2320/0209G09G3/2011
    • To restrict a potential oscillation in a video line caused by a high speed sampling rate, the active matrix display device is comprised of gate lines X in row, signal lines Y in column and liquid crystal pixels LC of matrix arranged at each of the crossing points of both lines. The V driver 1 scans in sequence each of the gate lines X and selects the liquid crystal pixels LC in one line for every one horizontal period. The H driver 4 performs a sampling of the video signal VSIG for each of the signal lines Y and performs a writing of the video signal VSIG in the liquid crystal pixels LC in one selected line within one horizontal period. The precharging means 5 supplies the predetermined precharging signal VPS to each of the signal lines Y just before writing the video signal VSIG for the liquid crystal pixels LC in one line. With such an arrangement as above, it is possible to reduce the charging or discharging amount in each of the signal lines Y when the video signal VSIG is sampled and further to restrict the potential oscillation in the video line 2.
    • 为了限制由高速采样率引起的视频线中的潜在振荡,有源矩阵显示装置由行中的栅极线X,列中的信号线Y和布置在每个交叉点处的矩阵的液晶像素LC 的两条线。 V驱动器1依次扫描每条栅极线X,并且在每一个水平周期中一行地选择液晶像素LC。 H驱动器4对每个信号线Y执行视频信号VSIG的采样,并且在一个水平周期内在一个选定行中执行在液晶像素LC中的视频信号VSIG的写入。 在将液晶像素LC的视频信号VSIG写入一行之前,预充电装置5将预定的预充电信号VPS提供给每个信号线Y. 通过上述这样的配置,当视频信号VSIG被采样时,可以减少每条信号线Y中的充电或放电量,并且进一步限制视频线2中的电位振荡。