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1. 发明申请

US20090314210A1 Epitaxial growth susceptor 审中-公开
标题翻译：外延生长基因
公开(公告)号：US20090314210A1
公开(公告)日：2009-12-24
申请号：US12461820
申请日：2009-08-25
申请人： Masayuki Ishibashi , John F. Krueger , Takayuki Dohi , Daizo Horie , Takashi Fujikawa
发明人： Masayuki Ishibashi , John F. Krueger , Takayuki Dohi , Daizo Horie , Takashi Fujikawa
IPC分类号： H01L21/36
CPC分类号： C30B25/12 , C23C14/50 , C23C14/54 , C23C16/45519 , C23C16/45521 , C23C16/4583 , C23C16/4584 , C23C16/4585 , C30B29/06 , H01L21/02381 , H01L21/20 , H01L21/2205 , H01L21/68735 , H01L21/68785
摘要： A susceptor for use in an epitaxial growth apparatus and method where a plurality of circular through-holes are formed in the bottom wall of a pocket in an outer peripheral region a distance of up to about ½ the radius toward the center of the circular bottom wall. The total opening surface area of these through-holes is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes provided at this outer peripheral region is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2. After a semiconductor wafer is mounted in the pocket, epitaxial growth is carried out while source gas and carrier gas (i.e., reactive gas) is made to flow on the upper surface side of the susceptor and carrier gas is made to flow on the lower surface side.
摘要翻译：一种用于外延生长装置和方法的感受体，其中多个圆形通孔形成在凹槽的底壁中的外围区域中，该圆形通孔的距离为圆形底壁的中心的半径的大约1/2 。这些通孔的总开口面积为底壁表面积的0.05〜55％。在该外周区域设置的各通孔的开口面积为0.2〜3.2mm 2，通孔的密度为每平方厘米0.25〜25。在将半导体晶片安装在口袋中之后，进行外延生长，同时源气体和载气（即，反应性气体）在基座的上表面侧流动，并使载气在下表面上流动侧。

2. 发明授权

US08926754B2 Epitaxial growth susceptor 有权
公开(公告)号：US08926754B2
公开(公告)日：2015-01-06
申请号：US12461820
申请日：2009-08-25
申请人： Masayuki Ishibashi , John F. Krueger , Takayuki Dohi , Daizo Horie , Takashi Fujikawa
发明人： Masayuki Ishibashi , John F. Krueger , Takayuki Dohi , Daizo Horie , Takashi Fujikawa
IPC分类号： C23C16/00 , H01L21/306 , C30B25/12 , C23C16/458 , C30B29/06 , H01L21/687 , C23C16/455
CPC分类号： C30B25/12 , C23C14/50 , C23C14/54 , C23C16/45519 , C23C16/45521 , C23C16/4583 , C23C16/4584 , C23C16/4585 , C30B29/06 , H01L21/02381 , H01L21/20 , H01L21/2205 , H01L21/68735 , H01L21/68785
摘要： A susceptor for use in an epitaxial growth apparatus and method where a plurality of circular through-holes are formed in the bottom wall of a pocket in an outer peripheral region a distance of up to about ½ the radius toward the center of the circular bottom wall. The total opening surface area of these through-holes is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes provided at this outer peripheral region is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2. After a semiconductor wafer is mounted in the pocket, epitaxial growth is carried out while source gas and carrier gas (i.e., reactive gas) is made to flow on the upper surface side of the susceptor and carrier gas is made to flow on the lower surface side.

3. 发明申请

US20050000449A1 Susceptor for epitaxial growth and epitaxial growth method 审中-公开
标题翻译：外延生长和外延生长方法的受体
公开(公告)号：US20050000449A1
公开(公告)日：2005-01-06
申请号：US10483809
申请日：2002-12-23
申请人： Masayuki Ishibashi , John Krueger , Takayuki Dohi , Daizo Horie , Takashi Fujikawa
发明人： Masayuki Ishibashi , John Krueger , Takayuki Dohi , Daizo Horie , Takashi Fujikawa
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C30B25/12 , C30B29/06 , H01L21/687 , C23C16/00
CPC分类号： C30B25/12 , C23C14/50 , C23C14/54 , C23C16/45519 , C23C16/45521 , C23C16/4583 , C23C16/4584 , C23C16/4585 , C30B29/06 , H01L21/02381 , H01L21/20 , H01L21/2205 , H01L21/68735 , H01L21/68785
摘要： A susceptor for use in an epitaxial growth apparatus and method where a plurality of circular through-holes are formed in the bottom wall of a pocket in an outer peripheral region a distance of up to about ½ the radius toward the center of the circular bottom wall. The total opening surface area of these through-holes is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes provided at this outer peripheral region is 0.2 to 3.2 mm2 and the density of the through-holes is 0.25 to 25 per cm2. After a semiconductor wafer is mounted in the pocket, epitaxial growth is carried out while source gas and carrier gas (i.e., reactive gas) is made to flow on the upper surface side of the susceptor and carrier gas is made to flow on the lower surface side.
摘要翻译：一种用于外延生长装置和方法的感受体，其中多个圆形通孔形成在凹槽的底壁中的外围区域中，该圆形通孔的距离为圆形底壁的中心的半径的大约1/2 。这些通孔的总开口面积为底壁表面积的0.05〜55％。在该外周区域设置的各通孔的开口面积为0.2〜3.2mm 2，通孔的密度为每平方厘米0.25〜25。在将半导体晶片安装在口袋中之后，进行外延生长，同时源气体和载气（即，反应性气体）在基座的上表面侧流动，并使载气在下表面上流动侧。

4. 发明申请

US20080110401A1 Susceptor For Vapor-Phase Growth Reactor 审中-公开
标题翻译：气相生长反应器的受体
公开(公告)号：US20080110401A1
公开(公告)日：2008-05-15
申请号：US11569139
申请日：2005-05-17
申请人： Takashi Fujikawa , Masayuki Ishibashi , Takayuki Dohi , Seiji Sugimoto
发明人： Takashi Fujikawa , Masayuki Ishibashi , Takayuki Dohi , Seiji Sugimoto
IPC分类号： C23C16/02
CPC分类号： H01L21/68735 , C23C16/4583 , C30B25/12 , H01L21/68785
摘要： In a susceptor (10) having a wafer pocket (101) for receiving a wafer W at the time of vapor-phase growth, the wafer pocket has at least a first pocket portion (102) for loading an outer circumferential portion of the wafer and a second pocket portion (103) formed to be lower than the first pocket and having a smaller diameter than that of the first pocket portion, and a fluid passage (105) having one end (105a) opening on a vertical wall (103a) of said second pocket portion and the other end (105b) opening on a back surface (104) or a side surface (106) of the susceptor is formed.
摘要翻译：在具有用于在气相生长时接收晶片W的晶片槽（101）的基座（10）中，晶片槽具有用于加载晶片的外圆周部分的至少第一凹部（102）形成为比所述第一凹部低的直径小于所述第一凹部的直径的第二凹部（103），以及具有在垂直壁（103a）上开口的一端（105a）的流体通路）和在所述基座的背面（104）或侧面（106）上开口的另一端（105b）形成。

5. 发明授权

US09017483B2 Susceptor for vapor phase epitaxial growth device 有权
标题翻译：气相外延生长装置的受体
公开(公告)号：US09017483B2
公开(公告)日：2015-04-28
申请号：US12364149
申请日：2009-02-02
申请人： Takashi Fujikawa , Masayuki Ishibashi , Kazuhiro Iriguchi , Kouhei Kawano
发明人： Takashi Fujikawa , Masayuki Ishibashi , Kazuhiro Iriguchi , Kouhei Kawano
IPC分类号： C23C16/458 , C30B25/12
CPC分类号： C30B25/12 , C23C16/4588
摘要： There is provided a susceptor for a vapor phase epitaxial growth device, by which skidding at the time of loading a silicon wafer is prevented and the wafer can be loaded at a fixed position of the susceptor: wherein a ring-shaped groove having sloping planes widening toward a surface of the susceptor are formed on the outermost circumference of the bottom surface; and gas release openings penetrating through to the back surface of the susceptor are formed, each having a sectional area of 2.0 to 3.0 mm2 and a ratio of all opening areas is 0.25 to 0.5% on the bottom surface.
摘要翻译：提供了一种用于气相外延生长装置的感受体，通过该感受器防止在装载硅晶片时的打滑，并且可以将晶片装载在基座的固定位置：其中具有倾斜平面的环形凹槽变宽朝向基座的表面形成在底面的最外周上; 形成穿过基座的背面的气体释放开口，各自的截面积为2.0〜3.0mm 2，底面的所有开口面积的比例为0.25〜0.5％。

6. 发明申请

US20100227455A1 EPITAXIAL FILM GROWING METHOD, WAFER SUPPORTING STRUCTURE AND SUSCEPTOR 有权
标题翻译：外延膜生长方法，支架结构和阻塞
公开(公告)号：US20100227455A1
公开(公告)日：2010-09-09
申请号：US12682850
申请日：2008-11-06
申请人： Takashi Fujikawa , Seiji Sugimoto
发明人： Takashi Fujikawa , Seiji Sugimoto
IPC分类号： H01L21/20
CPC分类号： H01L21/68735 , C23C16/4585 , C30B25/12
摘要： An annular step portion provided to a periphery of a wafer housing portion is provided to an area with which an area of 1 to 6 mm from a boundary line with a chamfered surface of a wafer rear surface toward a wafer center comes in contact. As a result, it is possible to produce an epitaxial wafer having no scratch in a boundary area between the rear surface and the chamfered surface, and to eliminate particles generated due to a scratch in a device process.
摘要翻译：设置在晶片收纳部周边的环状台阶部设置在与晶片背面朝向晶片中心的倒角表面的边界线1〜6mm的面积接触的区域。结果，可以在后表面和倒角表面之间的边界区域中制造没有划痕的外延晶片，并且消除在器件工艺中由划痕产生的微粒。

7. 发明申请

US20090071875A1 CATALYST FOR HYDRODESULFURIZATION/DEWAXING OF HYDROCARBON OIL, PROCESS FOR PRODUCING THE SAME, AND METHOD OF HYDROTREATING HYDROCARBON OIL WITH THE CATALYST 有权
标题翻译：用于烃油加氢脱蜡的催化剂，其生产工艺及其与催化剂氢化烃油的方法
公开(公告)号：US20090071875A1
公开(公告)日：2009-03-19
申请号：US12299329
申请日：2007-09-10
申请人： Yoshinori Kato , Hiroshi Kimura , Kazuyuki Kiriyama , Takashi Fujikawa
发明人： Yoshinori Kato , Hiroshi Kimura , Kazuyuki Kiriyama , Takashi Fujikawa
IPC分类号： C10G45/00
CPC分类号： B01J29/076 , B01J29/48 , B01J31/04 , B01J37/0203 , B01J37/08 , B01J2229/34 , B01J2229/37 , B01J2229/40 , C10G45/08 , C10G45/12 , C10G45/64 , C10G2300/202 , C10G2300/301 , C10G2300/4006 , C10G2300/70 , C10G2400/04
摘要： An object of the present invention is to provide a catalyst for hydrodesulfurization/dewaxing of a hydrocarbon oil, with which sulfur compounds in the hydrocarbon oil can be desulfurized to a high degree and which simultaneously is extremely effective in reducing the wax deposit content; a process for producing the catalyst; and a method of hydrotreatment with the catalyst.The invention relates to a catalyst for hydrodesulfurization/dewaxing of a hydrocarbon oil, comprising a support comprising an inorganic oxide containing at least one crystalline aluminosilicate having a one- or two-dimensional pore path system and, having provided thereon, 10 to 35% by mass of a metal in Group 6 of the Periodic Table, 1 to 10% by mass of a metal in Group 8 of the Periodic Table, and 1.5 to 6% by mass of phosphorus in terms of oxide amount on the basis of the catalyst and further containing 2 to 14% by mass of carbon derived from an organic acid in terms of element amount on the basis of the catalyst, wherein the content of the crystalline aluminosilicate having a one- or two-dimensional pore path system in the support is 3 to 25% by mass on the basis of the support; a process for producing the catalyst; and a method of hydrotreatment with the catalyst.
摘要翻译：本发明的目的在于提供一种用于烃油加氢脱硫/脱蜡的催化剂，其中烃油中的硫化合物可以高度脱硫，同时在降低蜡沉积物含量方面非常有效; 催化剂的制造方法; 和用催化剂进行加氢处理的方法。本发明涉及一种用于烃油加氢脱硫/脱蜡的催化剂，其包括含有至少一种具有一维或二维孔道系统的至少一种结晶硅铝酸盐的无机氧化物的载体，并且其上提供10-35％周期表第6族中的金属质量，周期表第8族中的金属为1〜10质量％，以催化剂为基准的氧化物量为1.5〜6质量％，以及进一步含有2〜14质量％的以有机酸为基准的碳，基于催化剂的元素量，其中载体中具有一维或二维孔径体系的结晶铝硅酸盐的含量为3 至25质量％; 催化剂的制造方法; 和用催化剂进行加氢处理的方法。

8. 发明授权

US06836140B2 Method for manufacturing a display device, and display device substrate 有权
标题翻译：显示装置的制造方法以及显示装置用基板
公开(公告)号：US06836140B2
公开(公告)日：2004-12-28
申请号：US09983947
申请日：2001-10-26
申请人： Takashi Fujikawa , Yoshiharu Kataoka , Hitoshi Matsumoto
发明人： Takashi Fujikawa , Yoshiharu Kataoka , Hitoshi Matsumoto
IPC分类号： G01R3100
CPC分类号： G02F1/1309 , G02F1/13452
摘要： A TEG (Test Element Group) block 1 includes a TFT (Thin Film Transistor) test element and a capacitance test element that are arranged adjacent to each other, and six test terminals. A TEG block 2 includes a resistance test element and a capacitance test element that are arranged adjacent to each other, and six test terminals. In these TEG blocks, the test terminals are arranged with the same pattern. Each of the test elements in each TEG block is connected to at least one of a plurality of test terminals included in that TEG block. The test elements can be efficiently formed on the substrate in view of the space on a display device substrate or the preference of characteristics to be evaluated. Moreover, characteristics of each test element can be conducted with a common probe regardless of the type of display device.
摘要翻译： TEG（测试元件组）块1包括彼此相邻布置的TFT（薄膜晶体管）测试元件和电容测试元件，以及六个测试端子。 TEG模块2包括彼此相邻布置的电阻测试元件和电容测试元件，以及六个测试端子。在这些TEG模块中，测试端子以相同的模式排列。每个TEG块中的每个测试元件连接到包括在该TEG块中的多个测试终端中的至少一个测试元件。考虑到显示设备基板上的空间或者优选地，可以在衬底上有效地形成测试元件的特征被评估。此外，无论显示装置的类型如何，都可以使用普通探针来进行每个测试元件的特性。

9. 发明授权

US09106028B2 Connector for a memory card 有权
标题翻译：存储卡连接器
公开(公告)号：US09106028B2
公开(公告)日：2015-08-11
申请号：US13513873
申请日：2010-12-08
申请人： Yasuyoshi Matsumoto , Mitsuhiro Tomita , Takashi Fujikawa
发明人： Yasuyoshi Matsumoto , Mitsuhiro Tomita , Takashi Fujikawa
IPC分类号： H01R24/00 , H01R12/71 , H01R12/70
CPC分类号： H01R12/714 , H01R12/7094
摘要： A connector for a card having a housing for housing a card equipped with a terminal member, a connection terminal attached to the housing for contacting the terminal member of the card and a detecting switch equipped with a first contact member and a second contact member for detecting separation from each other and the insertion of a card into the housing, wherein at least the first contact member or the second contact member is equipped with a fixed portion fixed to the housing and a moving portion displaceable by the housing and unevenly mated with the housing.
摘要翻译：一种用于卡的连接器，其具有用于容纳配备有端子构件的卡的壳体，附接到壳体的用于接触卡的端子构件的连接端子和配备有第一接触构件的检测开关和用于检测的第二接触构件彼此分离并将卡插入壳体中，其中至少第一接触构件或第二接触构件配备有固定到壳体的固定部分和由壳体移动的移动部分并且与壳体不均匀地配合。

10. 外观设计

USD672875S1 Eartip retainer for hearing aids 有权
公开(公告)号：USD672875S1
公开(公告)日：2012-12-18
申请号：US29398000
申请日：2011-07-25
申请人： Masahiro Ishibashi , Yosimasa Simogochi , Takeshi Umeda , Takashi Fujikawa
设计人： Masahiro Ishibashi , Yosimasa Simogochi , Takeshi Umeda , Takashi Fujikawa

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