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    • 3. 发明授权
    • Emergency notification system and emergency notification device
    • 紧急通知系统和紧急通知装置
    • US08103239B2
    • 2012-01-24
    • US11352545
    • 2006-02-10
    • Junichi YamazakiMasaaki Kawabata
    • Junichi YamazakiMasaaki Kawabata
    • H04M11/04H04M3/43H04W24/00
    • G08B25/016G08B25/08
    • An emergency notification uses a normal cellular telephone terminal instead of a dedicated terminal without requiring communication using a voice. An emergency notification system has a mobile communication network including a cellular telephone terminal, an emergency notification device for receiving an emergency notification, a communication line connecting the mobile communication network and the emergency notification device, and the cellular telephone terminal including display means for displaying a menu for identifying kind of emergency notification on a display screen and means for performing the emergency notification in response to selection of one of items in the menu by a user.
    • 紧急通知使用普通的蜂窝电话终端而不是专用终端,而不需要使用语音进行通信。 紧急通知系统具有移动通信网络,包括蜂窝电话终端,用于接收紧急通知的紧急通知装置,连接移动通信网络的通信线路和紧急通知装置,以及包括显示装置的蜂窝电话终端 用于在显示屏幕上识别种类的紧急通知的菜单,以及响应于用户对菜单中的一个项目的选择而执行紧急通知的装置。
    • 5. 发明申请
    • Light-emitting diode device and production method thereof
    • 发光二极管装置及其制造方法
    • US20060163603A1
    • 2006-07-27
    • US10544940
    • 2004-02-09
    • Ryouichi TakeuchiKeiichi MatsuzawaJunichi Yamazaki
    • Ryouichi TakeuchiKeiichi MatsuzawaJunichi Yamazaki
    • H01L33/00
    • H01L33/30H01L33/02H01L33/14
    • A double hetero structure light-emitting diode device includes an active layer (6), a positive-electrode-side cladding layer, a negative-electrode-side cladding layer (4), a window layer (9) and an undoped AlInP layer. The positive-electrode-side cladding layer includes an undoped AlInP layer (7) grown to have a thickness of 0.5 μm and an intermediate layer (8) doped to assume p-type conductivity and having an intermediate energy band gap value between that of the undoped AlInP layer and that of the window layer. The window layer on the intermediate layer is a GaP layer grown at 730° C. or higher and at a growth rate of 7.8 μm/hour or more in the presence of Ze serving as a dopant. The negative-electrode-side cladding layer is provided with an undoped AlInP layer (5) having a thickness of 0.1 μm or more. With this configuration, there is provided a light-emitting diode device that enhances the crystallinity of a window layer, prevents generation of faults caused by a high-temperature process and attains high luminance at a wavelength falling within a yellow-green band.
    • 双异质结构发光二极管装置包括有源层(6),正电极侧覆层,负电极侧覆层(4),窗口层(9)和未掺杂的AlInP层。 正电极侧包覆层包括生长为厚度为0.5μm的未掺杂的AlInP层(7)和被掺杂为具有p型导电性的中间层(8),并且具有中间能带隙值 未掺杂的AlInP层和窗口层的。 中间层上的窗口层是在作为掺杂剂的Ze的存在下,在730℃以上,生长速度为7.8μm/小时以上的GaP层。 负极侧包层设置有厚度为0.1μm以上的未掺杂的AlInP层(5)。 采用这种结构,提供了一种提高窗口层的结晶度的发光二极管装置,防止由高温处理引起的故障的产生,并且在落在黄绿色带中的波长下获得高亮度。