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1. 发明申请

US20110092016A1 METHOD OF TREATING SEMICONDUCTOR ELEMENT 有权
标题翻译：处理半导体元件的方法
公开(公告)号：US20110092016A1
公开(公告)日：2011-04-21
申请号：US12865032
申请日：2009-03-02
申请人： Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
发明人： Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
IPC分类号： H01L21/26 , H01L21/34
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78633
摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.
摘要翻译：在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。半导体中间隙状态的面密度为1013cm-2eV-1或更小。带隙可以是2eV或更大。半导体可以包括选自In，Ga，Zn和Sn中的至少一种。半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

2. 发明授权

US08084331B2 Method of treating semiconductor element 有权
标题翻译：半导体元件的处理方法
公开(公告)号：US08084331B2
公开(公告)日：2011-12-27
申请号：US12865032
申请日：2009-03-02
申请人： Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
发明人： Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
IPC分类号： H01L21/331
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78633
摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.
摘要翻译：在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。半导体中间隙状态的面密度为1013cm-2eV-1或更小。带隙可以是2eV或更大。半导体可以包括选自In，Ga，Zn和Sn中的至少一种。半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

3. 发明授权

US08304298B2 Inverter manufacturing method and inverter 有权
标题翻译：变频器制造方法及变频器
公开(公告)号：US08304298B2
公开(公告)日：2012-11-06
申请号：US12597211
申请日：2008-05-15
申请人： Masato Ofuji , Katsumi Abe , Ryo Hayashi , Masafumi Sano , Hideya Kumomi
发明人： Masato Ofuji , Katsumi Abe , Ryo Hayashi , Masafumi Sano , Hideya Kumomi
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , H01L27/1233
摘要： To provide an enhancement-depletion (E/D) inverter which can be easily manufactured, in the present invention, a method of manufacturing an inverter which is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, the inverter being the E/D inverter having plural thin film transistors, is characterized by comprising the steps of: forming a first transistor and a second transistor, the thicknesses of the channel layers of the first and second transistors being mutually different; and executing heat treatment to at least one of the channel layers of the first and second transistors.
摘要翻译：为了提供易于制造的增强耗尽（E / D）逆变器，在本发明中，制造由氧化物半导体构成的逆变器的制造方法，其中沟道层包括选自In， Ga和Zn形成在同一衬底上，所述逆变器是具有多个薄膜晶体管的E / D逆变器，其特征在于包括以下步骤：形成第一晶体管和第二晶体管，第一和第二晶体管的沟道层的厚度第二晶体管是相互不同的; 以及对所述第一和第二晶体管的至少一个沟道层执行热处理。

4. 发明申请

US20100117072A1 LIGHT EMITTING APPARATUS AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20100117072A1
公开(公告)日：2010-05-13
申请号：US12596998
申请日：2008-04-23
申请人： Masato Ofuji , Katsumi Abe , Ryo Hayashi , Masafumi Sano , Hideya Kumomi
发明人： Masato Ofuji , Katsumi Abe , Ryo Hayashi , Masafumi Sano , Hideya Kumomi
IPC分类号： H01L33/00 , H01L29/04 , H01L21/00 , H01L21/84
CPC分类号： H01L27/3246 , H01L27/3244 , H01L27/3248 , H01L27/3262 , H01L29/7869 , H01L51/5256
摘要： To provide a light emitting apparatus in which high definition can be realized and the connection reliability of a wiring portion is excellent, the light emitting apparatus includes: a substrate; a light emitting element which includes a first electrode, an emission layer, and a second electrode which are stacked on the substrate in the stated order; and a thin film transistor which is of an n-type and includes a channel layer and a drain electrode, the light emitting element and the thin film transistor are arranged in parallel and in contact with the substrate, the channel layer of the thin film transistor has a field effect mobility equal to or larger than 1 cm2V−1s−1, and the second electrode is connected with the drain electrode of the thin film transistor.
摘要翻译：为了提供可以实现高清晰度并且布线部分的连接可靠性优异的发光装置，发光装置包括：基板; 发光元件，其包括以所述顺序层叠在所述基板上的第一电极，发光层和第二电极; 以及薄膜晶体管，其为n型并且包括沟道层和漏电极，所述发光元件和所述薄膜晶体管平行并且与所述衬底接触，所述薄膜晶体管的沟道层具有等于或大于1cm 2V-1s-1的场效应迁移率，并且第二电极与薄膜晶体管的漏电极连接。

5. 发明申请

US20100090205A1 ACTIVE MATRIX DISPLAY APPARATUS 有权
标题翻译：主动矩阵显示设备
公开(公告)号：US20100090205A1
公开(公告)日：2010-04-15
申请号：US12520944
申请日：2007-01-29
申请人： Masato Ofuji , Katsumi Abe , Masafumi Sano , Hideya Kumomi , Ryo Hayashi
发明人： Masato Ofuji , Katsumi Abe , Masafumi Sano , Hideya Kumomi , Ryo Hayashi
IPC分类号： H01L51/50 , H01L29/24 , H01L33/00
CPC分类号： H01L27/3265 , H01L27/3248 , H01L2227/323 , H01L2251/5323
摘要： An active matrix display apparatus including a transistor 20, a storage capacitor 30 and a light-emitting element 40, which are formed on a substrate 10. The transistor 20 has a source electrode 21, a drain electrode 22 and a gate electrode 23. The storage capacitor 30 has a multilayered structure of a first electrode 31, a dielectric layer 32 and a second electrode 33 stacked in this order on the substrate 10. The light-emitting element 40 has a multilayered structure of a third electrode 41, a light-emitting layer 42 and a fourth electrode 43 stacked in this order on the substrate 10. The first electrode 31 is connected to the gate electrode 23, and at least a part of the storage capacitor 30 is disposed between the substrate 10 and the light-emitting element 40. All of the substrate 10, the first electrode 31, second electrode 33 and the third electrode 41 are formed from a material transmitting a visible light.
摘要翻译：形成在基板10上的包括晶体管20，存储电容30和发光元件40的有源矩阵型显示装置。晶体管20具有源电极21，漏电极22和栅电极23。存储电容器30具有在基板10上依次堆叠的第一电极31，电介质层32和第二电极33的多层结构。发光元件40具有第三电极41，发光元件发光层42和第四电极43依次层叠在基板10上。第一电极31与栅电极23连接，保持电容30的至少一部分配置在基板10和发光层基板10，第一电极31，第二电极33和第三电极41都由透射可见光的材料形成。

6. 发明授权

US08507910B2 Active matrix display apparatus 有权
标题翻译：主动矩阵显示装置
公开(公告)号：US08507910B2
公开(公告)日：2013-08-13
申请号：US12520944
申请日：2008-01-17
申请人： Masato Ofuji , Katsumi Abe , Masafumi Sano , Hideya Kumomi , Ryo Hayashi
发明人： Masato Ofuji , Katsumi Abe , Masafumi Sano , Hideya Kumomi , Ryo Hayashi
IPC分类号： H01L29/00
CPC分类号： H01L27/3265 , H01L27/3248 , H01L2227/323 , H01L2251/5323
摘要： An active matrix display apparatus includes a transistor, a storage capacitor, and a light-emitting element formed on a substrate. The transistor includes a source electrode, a drain electrode, and a gate electrode. The storage capacitor has a multilayered structure of a first electrode, a dielectric layer, and a second electrode stacked in this order on the substrate, and the light-emitting element has a multilayered structure of a third electrode, a light-emitting layer, and a fourth electrode stacked in this order on the substrate. The first electrode is electrically connected to the gate electrode of the transistor, and at least a part of the storage capacitor is disposed between the substrate and the light-emitting element. All of the substrate, the first electrode, the second electrode, and the third electrode are formed from a material transmitting a visible light emitted by the light-emitting element. Viewing from a top of the substrate, a region for storing charges in the storage capacitor includes or is equal to a light-emitting region of the light-emitting element.
摘要翻译：有源矩阵显示装置包括晶体管，存储电容器和形成在基板上的发光元件。晶体管包括源电极，漏电极和栅电极。存储电容器具有在基板上依次层叠的第一电极，电介质层和第二电极的多层结构，并且发光元件具有第三电极，发光层和多层结构的多层结构在基板上依次层叠的第四电极。第一电极电连接到晶体管的栅电极，并且至少一部分存储电容器设置在基板和发光元件之间。所有的基板，第一电极，第二电极和第三电极由透射由发光元件发出的可见光的材料形成。从基板的顶部观察，用于在存储电容器中存储电荷的区域包括或等于发光元件的发光区域。

7. 发明申请

US20100085081A1 INVERTER MANUFACTURING METHOD AND INVERTER 有权
标题翻译：逆变器制造方法和逆变器
公开(公告)号：US20100085081A1
公开(公告)日：2010-04-08
申请号：US12597211
申请日：2008-05-15
申请人： Masato Ofuji , Katsumi Abe , Ryo Hayashi , Masafumi Sano , Hideya Kumomi
发明人： Masato Ofuji , Katsumi Abe , Ryo Hayashi , Masafumi Sano , Hideya Kumomi
IPC分类号： H03K19/20 , H03K19/0944 , H01L21/8254 , H01L21/8236 , H01L21/42
CPC分类号： H01L29/7869 , H01L27/1233
摘要： To provide an enhancement-depletion (E/D) inverter which can be easily manufactured, in the present invention, a method of manufacturing an inverter which is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, the inverter being the E/D inverter having plural thin film transistors, is characterized by comprising the steps of: forming a first transistor and a second transistor, the thicknesses of the channel layers of the first and second transistors being mutually different; and executing heat treatment to at least one of the channel layers of the first and second transistors.
摘要翻译：为了提供易于制造的增强耗尽（E / D）逆变器，在本发明中，制造由氧化物半导体构成的逆变器的制造方法，其中沟道层包括选自In， Ga和Zn形成在同一衬底上，所述逆变器是具有多个薄膜晶体管的E / D逆变器，其特征在于包括以下步骤：形成第一晶体管和第二晶体管，第一和第二晶体管的沟道层的厚度第二晶体管是相互不同的; 以及对所述第一和第二晶体管的至少一个沟道层执行热处理。

8. 发明申请

US20110062441A1 SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS 有权
标题翻译：半导体器件和显示器
公开(公告)号：US20110062441A1
公开(公告)日：2011-03-17
申请号：US12992071
申请日：2009-05-11
申请人： Hisato Yabuta , Masato Ofuji , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko , Ryo Hayashi
发明人： Hisato Yabuta , Masato Ofuji , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko , Ryo Hayashi
IPC分类号： H01L33/08 , H01L33/16 , H01L33/26
CPC分类号： H01L29/78645 , H01L29/78633
摘要： Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.
摘要翻译：提供一种半导体器件，其包括至少包含半导体作为元件的半导体元件，其特征在于包括：用于使波长比半导体的吸收边缘波长长的光照射半导体的机构; 以及调光机构，其设置在光通过的光路的一部分中，用于调节从强度，照射时间和光的波长选择的至少一个因素，其中半导体元件的阈值电压被改变光由调光机构调节。

9. 发明授权

US08216879B2 Method for manufacturing semiconductor device or apparatus, and apparatus for manufacturing the same 有权
标题翻译：制造半导体装置或装置的方法及其制造装置
公开(公告)号：US08216879B2
公开(公告)日：2012-07-10
申请号：US12992070
申请日：2009-05-07
申请人： Nobuyuki Kaji , Masato Ofuji , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko , Ryo Hayashi
发明人： Nobuyuki Kaji , Masato Ofuji , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko , Ryo Hayashi
IPC分类号： H01L21/00 , H01L21/16 , H01L21/66 , G01R31/26
CPC分类号： H01L29/7869 , H01L22/14 , H01L29/66969
摘要： A method for manufacturing a semiconductor device or apparatus having at least a semiconductor as a component, characterized by including irradiating the semiconductor with light having a longer wavelength than the absorption edge wavelength of the semiconductor to change the threshold voltage of the semiconductor device or apparatus, and checking the threshold voltage of the semiconductor device or apparatus, after or during irradiation with the light, to determine whether the threshold voltage is in a predetermined range, during manufacturing the semiconductor device or apparatus.
摘要翻译：一种半导体器件或装置的制造方法，其至少具有半导体作为部件，其特征在于，包括用比所述半导体的吸收边缘波长长的波长的光照射所述半导体，以改变所述半导体器件或装置的阈值电压，以及在制造所述半导体器件或装置期间，在所述光照射之后或期间，检查所述半导体器件或装置的阈值电压，以确定所述阈值电压是否在预定范围内。

10. 发明申请

US20110076790A1 METHOD FOR CONTROLLING THRESHOLD VOLTAGE OF SEMICONDUCTOR ELEMENT 有权
标题翻译：用于控制半导体元件的阈值电压的方法
公开(公告)号：US20110076790A1
公开(公告)日：2011-03-31
申请号：US12992073
申请日：2009-05-11
申请人： Masato Ofuji , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko , Ryo Hayashi
发明人： Masato Ofuji , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko , Ryo Hayashi
IPC分类号： H01L21/66
CPC分类号： H01L29/7869 , H01L29/66969
摘要： A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of the irradiation intensity, irradiation time, and wavelength of the light for irradiating the semiconductor based on one of the measured threshold voltage and the measured characteristic value serving as the index for the threshold voltage; and a process to irradiate light whose one of the irradiation intensity, irradiation time, and wavelength has been determined onto the semiconductor; wherein the light irradiating the semiconductor is a light having a longer wavelength than the wavelength of the absorption edge of the semiconductor, and the threshold voltage is changed by the irradiation of the light.
摘要翻译：用于控制具有至少半导体作为分量的半导体元件的阈值电压的方法的特征在于包括测量作为阈值电压的指标的阈值电压和特征值之一的处理; 基于所测量的阈值电压和作为阈值电压的指标的测量特征值之一来确定用于照射半导体的光的照射强度，照射时间和波长之一的处理; 以及将照射强度，照射时间和波长中的一个已经确定到半导体上的光照射的过程; 其中照射半导体的光是比半导体的吸收边缘的波长长的波长的光，并且通过光的照射来改变阈值电压。

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