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1. 发明申请

US20100025145A1 PRESSURE WAVE GENERATOR AND TEMPERATURE CONTROLLING METHOD THEREOF 失效
标题翻译：压力波发生器及其温度控制方法
公开(公告)号：US20100025145A1
公开(公告)日：2010-02-04
申请号：US12521120
申请日：2007-12-17
申请人： Masato Hayashi , Masami Yakabe , Nobuyoshi Koshida
发明人： Masato Hayashi , Masami Yakabe , Nobuyoshi Koshida
IPC分类号： G10K15/04 , H05B1/02
CPC分类号： G10K15/04
摘要： A pressure wave generator (1) includes a thermally conductive substrate (2), a heat insulating layer (3) formed on one main surface of the substrate (2), an insulator layer (5) formed on the heat insulating layer (3), and a heat generator (4) formed on the insulator layer (5) to generate heat when a current containing an alternating component is applied thereto. The heat insulating layer (3) is formed containing at least one of silicon nitride (Si3N4), silicon dioxide (SiO2), aluminum oxide (Al2O3), magnesium oxide (MgO), diamond crystalline carbon (C), aluminum nitride (AlN), and silicon carbide (SiC). The heat generator (4) is formed containing, for example, gold (Au) or tungsten (W).
摘要翻译：压力波发生器（1）包括导热基板（2），形成在基板（2）的一个主表面上的绝热层（3），形成在绝热层（3）上的绝缘体层（5）以及形成在所述绝缘体层（5）上的热发生器（4），以在施加包含交替分量的电流时产生热量。该绝热层（3）形成为含有氮化硅（Si 3 N 4），二氧化硅（SiO 2），氧化铝（Al 2 O 3），氧化镁（MgO），金刚石结晶碳（C），氮化铝（AlN），和碳化硅（SiC）。形成有例如金（Au）或钨（W）的发热体（4）。

2. 发明授权

US08130593B2 Pressure wave generator and temperature controlling method thereof 失效
标题翻译：压力波发生器及其温度控制方法
公开(公告)号：US08130593B2
公开(公告)日：2012-03-06
申请号：US12521120
申请日：2007-12-17
申请人： Masato Hayashi , Masami Yakabe , Nobuyoshi Koshida
发明人： Masato Hayashi , Masami Yakabe , Nobuyoshi Koshida
IPC分类号： B06B1/06 , G10K15/04
CPC分类号： G10K15/04
摘要： A pressure wave generator (1) includes a thermally conductive substrate (2), a heat insulating layer (3) formed on one main surface of the substrate (2), an insulator layer (5) formed on the heat insulating layer (3), and a heat generator (4) formed on the insulator layer (5) to generate heat when a current containing an alternating component is applied thereto. The heat insulating layer (3) is formed containing at least one of silicon nitride (Si3N4), silicon dioxide (SiO2), aluminum oxide (Al2O3), magnesium oxide (MgO), diamond crystalline carbon (C), aluminum nitride (AlN), and silicon carbide (SiC). The heat generator (4) is formed containing, for example, gold (Au) or tungsten (W).
摘要翻译：压力波发生器（1）包括导热基板（2），形成在基板（2）的一个主表面上的绝热层（3），形成在绝热层（3）上的绝缘体层（5）以及形成在所述绝缘体层（5）上的热发生器（4），以在施加包含交替分量的电流时产生热量。该绝热层（3）形成为含有氮化硅（Si 3 N 4），二氧化硅（SiO 2），氧化铝（Al 2 O 3），氧化镁（MgO），金刚石结晶碳（C），氮化铝（AlN），和碳化硅（SiC）。形成有例如金（Au）或钨（W）的发热体（4）。

3. 发明授权

US07306990B2 Information storage element, manufacturing method thereof, and memory array 失效
标题翻译：信息存储元件，其制造方法和存储器阵列
公开(公告)号：US07306990B2
公开(公告)日：2007-12-11
申请号：US10535941
申请日：2003-11-28
申请人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
发明人： Shinya Yamaguchi , Masahiko Ando , Toshikazu Shimada , Natsuki Yokoyama , Shunri Oda , Nobuyoshi Koshida
IPC分类号： H01L21/336 , H01L21/00 , H01L29/788 , H01L21/3205 , H01L21/4763 , H01L29/76
CPC分类号： H01L29/7881 , G11C23/00
摘要： An information memory device capable of reading and writing of information by mechanical operation of a floating gate layer, in which a gate insulation film has a cavity (6), and a floating gate layer (5) having two stable deflection states in the cavity (6), the state stabilized by deflecting toward the channel side of transistor, and the state stabilized by deflecting toward the gate (7) side, writing and reading of information can be made by changing the stable deflection state of the floating gate layer (5) by Coulomb interactive force between the electrons (or positive holes 8) accumulated in the floating gate layer (5) and external electric field, and by reading the channel current change based on the state of the floating gate layer (5).
摘要翻译：一种能够通过机械操作读取和写入信息的信息存储装置，其中栅极绝缘膜具有空腔（6）和在空腔中具有两个稳定偏转状态的浮动栅层（5） 6），通过偏转晶体管的沟道侧稳定状态，并且通过偏向栅极（7）而稳定的状态，可以通过改变浮动栅极层（5）的稳定偏转状态来进行信息的写入和读取）通过积存在浮动栅极层（5）中的电子（或正空穴8）与外部电场之间的库仑相互作用力，并且基于浮动栅极层（5）的状态读取沟道电流变化。

4. 发明授权

US07119361B2 Luminescence stabilization of anodically oxidized porous silicon layers 失效
公开(公告)号：US07119361B2
公开(公告)日：2006-10-10
申请号：US10972550
申请日：2004-10-25
申请人： David John Lockwood , Rabah Boukherroub , Danial D. M. Wayner , Nobuyoshi Koshida
发明人： David John Lockwood , Rabah Boukherroub , Danial D. M. Wayner , Nobuyoshi Koshida
IPC分类号： H01L29/08
CPC分类号： C25D11/32
摘要： A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.

5. 发明申请

US20050085001A1 Luminescence stabilization of anodically oxidized porous silicon layers 失效
标题翻译：阳极氧化多孔硅层的发光稳定性
公开(公告)号：US20050085001A1
公开(公告)日：2005-04-21
申请号：US10972550
申请日：2004-10-25
申请人： David Lockwood , Rabah Boukherroub , Danial Wayner , Nobuyoshi Koshida
发明人： David Lockwood , Rabah Boukherroub , Danial Wayner , Nobuyoshi Koshida
IPC分类号： C25D11/32 , H01L21/00 , H01L21/31 , H01L21/469
CPC分类号： C25D11/32
摘要： A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.
摘要翻译：多孔硅结构通过阳极氧化该结构而稳定化，然后进行化学官能化以保护未氧化的表面区域，优选在1-癸烯存在下在热条件下进行。该方法在结构表面上产生保护性有机单层，使其高度稳定。

6. 发明申请

US20110204290A1 SILICON-BASED BLUE-GREEN PHOSPHORESCENT MATERIAL OF WHICH LUMINESCENCE PEAK CAN BE CONTROLLED BY EXCITATION WAVELENGTH AND PROCESS FOR PRODUCING SILICON-BASED BLUE-GREEN PHOSPHORESCENT MATERIAL 审中-公开
标题翻译：通过激发波长控制光亮度的硅基蓝绿色荧光材料和生产基于硅的蓝绿色磷光体材料的方法
公开(公告)号：US20110204290A1
公开(公告)日：2011-08-25
申请号：US13061592
申请日：2009-08-26
申请人： Nobuyoshi Koshida , Bernard Gelloz
发明人： Nobuyoshi Koshida , Bernard Gelloz
IPC分类号： C09K11/59 , B82Y30/00 , B82Y40/00
CPC分类号： C09K11/59
摘要： Provided is a silicon-based blue phosphorescent material having a longer luminescence lifetime, a high luminescence intensity, and excellent long-term stability and reproducibility. A method for producing a silicon-based blue-green phosphorescent material controllable by an excitation wavelength, which comprises a first step of anodizing the surface of silicon to prepare a nanocrystal silicon or a nanostructure silicon, a second step of processing the nanocrystal silicon or the nanostructure silicon prepared in the first step for rapid thermal oxidation, and a third step of processing the nanocrystal silicon or nanostructure silicon having been processed for rapid thermal oxidation in the second step, for high-pressure water vapor annealing. Further, a silicon-based blue-green phosphorescent material controllable by an excitation wavelength, which comprises a silicon oxide film in which numerous nanoscale crystal silicon or nanostructure silicon embedded therein, and which has a transition property between molecular energy levels through triplet excitons having a relaxation time of not shorter than 1 ms, or luminescence transition through quasi-stable excitation or trap having a relaxation time of not shorter than 1 ms.
摘要翻译：具有发光寿命长，发光强度高，长期稳定性和再现性优异的硅系蓝色磷光材料。一种可由激发波长控制的硅基蓝绿色磷光发光材料的制造方法，其特征在于，包括对硅表面进行阳极氧化以制备纳米晶体硅或纳米结构硅的第一工序，将纳米晶硅或第在第一步中制备的用于快速热氧化的纳米结构硅，以及在第二步骤中处理用于快速热氧化的纳米晶体硅或纳米结构硅的第三步骤，用于高压水蒸气退火。此外，由激发波长控制的硅基蓝绿色磷光材料，其包含其中嵌入有许多纳米级晶体硅或纳米结构硅的氧化硅膜，并且其具有通过三线态激子的分子能级之间的转移特性，具有不小于1ms的弛豫时间，或具有不小于1ms的弛豫时间的准稳态激发或阱的发光跃迁。

7. 发明申请

US20090078928A1 LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND INFORMATION DISPLAY DEVICE 审中-公开
标题翻译：发光元件，发光装置和信息显示装置
公开(公告)号：US20090078928A1
公开(公告)日：2009-03-26
申请号：US11658578
申请日：2004-07-27
申请人： Nobuyoshi Koshida , Akira Kojima
发明人： Nobuyoshi Koshida , Akira Kojima
IPC分类号： H01L33/00
CPC分类号： H01L51/52 , H01L51/0059 , H01L51/5092
摘要： A light-emitting device has a structure in which a semiconductor or a conductive substrate having a bottom electrode, a layer for generating hot electrons, quasi-ballistic electrons or ballistic electrons, a luminous layer, and a semitransparent surface electrode are deposited, or a structure in which a holes supply layer is provided between the luminous layer and the semitransparent surface electrode having the same structure. The light-emitting device realizes highly efficient light emission in a range from infrared rays to ultraviolet ray with smaller driving current than that of conventional injection-type or intrinsic EL devices.
摘要翻译：发光装置具有其中沉积具有底部电极，产生热电子的层，准弹道电子或弹道电子的半导体或导电基板，发光层和半透明表面电极的结构，或者在具有相同结构的发光层和半透明表面电极之间设置有空穴供给层的结构。发光装置在比传统的注射型或本征EL器件的驱动电流小的红外线到紫外线的范围内实现高效的发光。

8. 发明申请

US20050201575A1 Thermally excited sound wave generating device 审中-公开
标题翻译：热激声波发生装置
公开(公告)号：US20050201575A1
公开(公告)日：2005-09-15
申请号：US10524585
申请日：2004-02-27
申请人： Nobuyoshi Koshida , Kenji Tsubaki
发明人： Nobuyoshi Koshida , Kenji Tsubaki
IPC分类号： G10K15/04 , H04R23/00 , H04R25/00
CPC分类号： H04R23/002 , G10K15/04
摘要： A thermally induced sound wave generating device comprising a thermally conductive substrate, a head insulation layer formed on one surface of the substrate, and a heating element thin film formed on the heat insulation layer and in the form of an electrically driven metal film, and wherein when the heat conductivity of the thermally conductive substrate is set as αs and its heat capacity is set as Cs, and the thermal conductivity of the beat insulation layer is set as αI and its heat capacity is set as CI, relation of 1/100≧αICI/αSCS and αSCS≧100×106 is realized. This is a new technical means capable of greatly improving the function of a pressure generating device based on thermal induction.
摘要翻译：一种热诱导声波发生装置，包括导热基板，形成在所述基板的一个表面上的磁头绝缘层和形成在所述绝热层上并以电驱动的金属膜的形式的加热元件薄膜，当将导热性基板的导热率设定为αS，将其热容设定为C _{，将隔热层的导热率设定为其热容量被设定为C I I I，其中，1/100> = 1 > /> S /> S和/或S / S> 实现了。这是一种能够大大提高基于热感应的压力发生装置的功能的新的技术手段。}

9. 发明授权

US06939728B2 Method of fabricating silicon emitter with a low porosity heavily doped contact layer 失效
标题翻译：制造具有低孔隙率重掺杂接触层的硅发射器的方法
公开(公告)号：US06939728B2
公开(公告)日：2005-09-06
申请号：US10439642
申请日：2003-05-15
申请人： Xia Sheng , Nobuyoshi Koshida , Huei-Pei Kuo
发明人： Xia Sheng , Nobuyoshi Koshida , Huei-Pei Kuo
IPC分类号： H01J1/312 , H01J1/308 , H01J9/02 , H10L21/00
CPC分类号： H01J1/308 , H01J9/022 , Y10S438/96
摘要： A high emission electron emitter and a method of fabricating a high emission electron emitter are disclosed. A high emission electron emitter includes an electron injection layer, an active layer of high porosity porous silicon material in contact with the electron injection layer, a contact layer of low porosity porous silicon material in contact with the active layer and including an interface surface with a heavily doped region, and an optional top electrode in contact with the contact layer. The contact layer reduces contact resistance between the active layer and the top electrode and the heavily doped region reduces resistivity of the contact layer thereby increasing electron emission efficiency and stable electron emission from the top electrode. The electron injection layer is made from an electrically conductive material such as n+ semiconductor, n+ single crystal silicon, a metal, a silicide, or a nitride. The active layer and the contact layer are formed in a layer of silicon material that is deposited on the electron injection layer and then electrochemically anodized in a hydrofluoric acid solution. Prior to the anodization, the interface surface can be doped to form the heavily doped region. The layer of silicon material can be porous epitaxial silicon, porous polysilicon, porous amorphous silicon, and porous silicon carbide.
摘要翻译：公开了高发射电子发射体和制造高发射电子发射体的方法。高发射电子发射体包括电子注入层，与电子注入层接触的高孔隙率多孔硅材料的有源层，与活性层接触的低孔隙率多孔硅材料的接触层，重掺杂区域和与接触层接触的可选顶部电极。接触层降低了有源层和顶部电极之间的接触电阻，并且重掺杂区域降低了接触层的电阻率，从而提高了电子发射效率和从顶部电极稳定的电子发射。电子注入层由诸如n +半导体，n +单晶硅，金属，硅化物或氮化物的导电材料制成。有源层和接触层形成在沉积在电子注入层上的硅材料层中，然后在氢氟酸溶液中电化学阳极氧化。在阳极氧化之前，可以将界面表面掺杂以形成重掺杂区域。硅材料层可以是多孔外延硅，多孔多晶硅，多孔非晶硅和多孔碳化硅。

10. 发明授权

US5413883A Reversible electrochemical electrode 失效
标题翻译：可逆电化学电极
公开(公告)号：US5413883A
公开(公告)日：1995-05-09
申请号：US146401
申请日：1993-11-01
申请人： Hiroshi Uemachi , Tadashi Sotomura , Kenichi Takeyama , Nobuyoshi Koshida
发明人： Hiroshi Uemachi , Tadashi Sotomura , Kenichi Takeyama , Nobuyoshi Koshida
IPC分类号： C23C14/22 , C23C14/20 , C23C14/48 , H01M4/139 , H01M4/60 , H01M10/05
CPC分类号： H01M4/60
摘要： A reversible electrochemical electrode applicable for a battery, sensor, memory or display device is made by ion-implanting a conductive solid polymer such as polyaniline with ions of alkaline or alkaline earth metal. A wide variety of selections and combinations of materials of the conductive solid polymer and ion is possible. In addition, n-type doping is possible.
摘要翻译：用于电池，传感器，存储器或显示装置的可逆电化学电极通过离子注入诸如聚苯胺的导电固体聚合物与碱金属或碱土金属的离子来制备。导电固体聚合物和离子的各种选择和材料的组合是可能的。此外，可以进行n型掺杂。

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