会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Light emitting diode array and production method of the light emitting
diode
    • 发光二极管阵列及发光二极管的制作方法
    • US5406095A
    • 1995-04-11
    • US112669
    • 1993-08-26
    • Yoshihisa KoyamaTaku KatayamaKatsuhiko MoritaMasashi YoshimuraToshiki YoshidaManabu Endo
    • Yoshihisa KoyamaTaku KatayamaKatsuhiko MoritaMasashi YoshimuraToshiki YoshidaManabu Endo
    • H01L27/15H01L33/00
    • H01L27/153
    • An LED (light emitting diode) array of the present invention has a plurality of light emitting diodes aligned in row on a substrate crystal. Each of the light emitting diodes has a double hetero-structure formed by causing a light emitting layer to be interposed between p-type and n-type semi-conductive layers and is isolated with isolating mesa grooves. A reflecting layer is provided between the substrate crystal and one of the p-type and n-type semi-conductive layers. The reflecting layer comprises a plurality of semi-conductive layers having at least different refractive indexes of 2 or more than 2-kinds, each of the semi-conductive layers made of semiconductor having the same polarity as that of the substrate crystal and having a wider forbidden band width than that of the light emitting layer. Further, the isolating mesa grooves are provided by a wet etching using an etching liquid of H.sub.3 PO.sub.4 .multidot.H.sub.2 O.sub.2 having volume ratio of H.sub.3 PO.sub.4 : H.sub.2 O.sub.2 =1.about.5:1, thus, the LED array having a high integration and a high light emitting output can be successfully produced.
    • 本发明的LED(发光二极管)阵列具有在衬底晶体上排成行的多个发光二极管。 每个发光二极管具有通过使发光层插入在p型和n型半导体层之间而形成的双异质结构,并且通过隔离台面凹槽隔离。 在衬底晶体和p型和n型半导体层中的一个之间提供反射层。 反射层包括多个半导体层,其折射率至少为2种以上,2种以上,半导体层由与半导体基板晶体相同极性的半导体层构成, 禁带宽度比发光层宽。 此外,通过使用体积比为H 3 PO 4 :H 2 O 2 = 1的DIFFERENCE 5:1的H 3 PO 4·H 2 O 2的蚀刻液的湿式蚀刻来提供隔离台面凹槽,因此可以成功地具有高积分和高发光输出的LED阵列 生产。