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    • 2. 发明授权
    • Field emission element
    • 场发射元件
    • US07067971B2
    • 2006-06-27
    • US10900124
    • 2004-07-28
    • Masateru TaniguchiManabu KitadaKazuhito NakamuraSatoru Kawata
    • Masateru TaniguchiManabu KitadaKazuhito NakamuraSatoru Kawata
    • H01J1/62
    • H01J1/3046H01J29/04H01J31/127H01J2201/30423
    • A field emission element has a gate electrode stacked on a substrate, an emitter electrode stacked on the gate electrode via an interlayer insulating layer, and an anode electrode formed on another substrate facing the emitter electrode. Further, the field emission element includes an anode pixel formed by the anode electrode and a generally rectangular fluorescent body formed thereon and a plurality of wells, each being formed in the emitter electrode and the interlayer insulating layer in a form of a narrow elongated hole. Here, the wells are disposed within a generally rectangular electron emitting area and at least a majority of the wells are arranged parallel to each other, and a length direction of the majority of the wells is substantially normal to that of the fluorescent body and the electron emitting area.
    • 场致发射元件具有层叠在基板上的栅电极,经由层间绝缘层堆叠在栅电极上的发射极,以及在与发射电极相对的另一基板上形成的阳极电极。 此外,场发射元件包括由阳极电极和形成在其上的大致矩形的荧光体形成的阳极像素和多个阱,每个阱形成在狭长的细长孔的发射电极和层间绝缘层中。 这里,阱设置在大致矩形的电子发射区域内,并且至少大部分阱彼此平行地布置,并且大部分阱的长度方向基本上与荧光体和电子的长度方向垂直 发射区域。