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1. 发明授权

US06752676B2 Methods for producing electron-emitting device, electron source, and image-forming apparatus 失效
标题翻译：用于制造电子发射器件，电子源和图像形成装置的方法
公开(公告)号：US06752676B2
公开(公告)日：2004-06-22
申请号：US09250400
申请日：1999-02-16
申请人： Masataka Yamashita , Hisaaki Kawade , Toshikazu Ohnishi , Tatsuya Iwasaki , Takeo Ono
发明人： Masataka Yamashita , Hisaaki Kawade , Toshikazu Ohnishi , Tatsuya Iwasaki , Takeo Ono
IPC分类号： H01J0902
CPC分类号： H01J9/027 , H01J2201/3165
摘要： A method for producing an electron-emitting device having an electroconductive film with an electron-emitting region extending between plural electrodes, includes a step of forming the electron-emitting region in the electroconductive film, including a step of heating the electroconductive film, and a step of energizing the electroconductive film in an atmosphere in which a gas for promoting cohesion of the electroconductive film exists.
摘要翻译：一种制造具有在多个电极之间延伸的电子发射区的导电膜的电子发射器件的方法包括在导电膜中形成电子发射区的步骤，包括加热导电膜的步骤，以及在导电膜的内聚力气体存在的气氛中赋能导电膜的工序。

2. 发明授权

US5591061A Apparatus for manufacturing electron source and image forming apparatus 失效
标题翻译：用于制造电子源和图像形成装置的装置
公开(公告)号：US5591061A
公开(公告)日：1997-01-07
申请号：US499579
申请日：1995-07-07
申请人： Sotomitsu Ikeda , Masato Yamanobe , Hisaaki Kawade , Toshikazu Ohnishi , Tatsuya Iwasaki
发明人： Sotomitsu Ikeda , Masato Yamanobe , Hisaaki Kawade , Toshikazu Ohnishi , Tatsuya Iwasaki
IPC分类号： H01J1/316 , H01J9/02 , H01J9/42
CPC分类号： H01J9/027 , H01J1/316
摘要： An electron-emitting device has a pair of device electrodes and an electroconductive thin film including an electron emitting region arranged between the electrodes. The device is manufactured via an activation process for increasing the emission current of the device. The activation process includes steps of a) applying a voltage (Vact) to the electroconductive thin film having a gap section under initial conditions, b) detecting the electric performance of the electroconductive thin film and c) modifying, if necessary, the initial conditions as a function of the detected electric performance of the electroconductive thin film.
摘要翻译：电子发射器件具有一对器件电极和导电薄膜，该导电薄膜包括布置在电极之间的电子发射区域。该器件通过激活过程制造，用于增加器件的发射电流。激活过程包括以下步骤：a）在初始条件下向具有间隙部分的导电薄膜施加电压（Vact），b）检测导电薄膜的电性能，以及c）如有必要，将初始条件修改为检测出导电薄膜的电性能的功能。

3. 发明授权

US5593335A Method of manufacturing an electron source 失效
标题翻译：制造电子源的方法
公开(公告)号：US5593335A
公开(公告)日：1997-01-14
申请号：US223528
申请日：1994-04-05
申请人： Hidetoshi Suzuki , Yoshiyuki Osada , Ichiro Nomura , Takeo Ono , Hisaaki Kawade , Eiji Yamaguchi , Toshihiko Takeda , Hiroaki Toshima , Yasuhiro Hamamoto , Tatsuya Iwasaki , Aoji Isono , Noritake Suzuki , Yasuyuki Todokoro , Masahiro Okuda , Katsuhiko Shinjo
发明人： Hidetoshi Suzuki , Yoshiyuki Osada , Ichiro Nomura , Takeo Ono , Hisaaki Kawade , Eiji Yamaguchi , Toshihiko Takeda , Hiroaki Toshima , Yasuhiro Hamamoto , Tatsuya Iwasaki , Aoji Isono , Noritake Suzuki , Yasuyuki Todokoro , Masahiro Okuda , Katsuhiko Shinjo
IPC分类号： G09G3/22 , H01J1/316 , H01J9/02 , H01J29/04 , H01J31/12 , H01J1/30
CPC分类号： H01J1/316 , G09G3/22 , H01J31/127 , H01J9/027 , G09G2300/0885 , G09G2310/06 , H01J2201/3165 , H01J2201/319 , H01J2329/00
摘要： A method of manufacturing an electron source having a plurality of surface-conduction electron-emitting devices arranged on a substrate in row and column directions includes the forming of electron emission portions of the plurality of surface-conduction electron-emitting devices. The forming is carried out by supplying current through the plurality of surface-conduction electron-emitting devices upon dividing them into a plurality of groups. An image forming apparatus passes a current through a plurality of electron sources, which are formed on a substrate and arrayed in the form of a matrix, in dependence upon an image signal, and an image is formed by a light emission in response to electrons emitted from the plurality of electron sources.
摘要翻译：制造具有沿行和列方向布置在基板上的多个表面传导电子发射器件的电子源的方法包括形成多个表面传导电子发射器件的电子发射部分。通过在通过多个表面传导电子发射器件将电流分成多个组时供给电流来进行形成。图像形成装置根据图像信号使电流通过形成在基板上并以矩阵的形式排列的多个电子源，并且通过响应于发射的电子的发光形成图像从多个电子源。

4. 发明授权

US06231412B1 Method of manufacturing and adjusting electron source array 失效
标题翻译：制造和调整电子源阵列的方法
公开(公告)号：US06231412B1
公开(公告)日：2001-05-15
申请号：US08718744
申请日：1996-09-18
申请人： Hisaaki Kawade , Tatsuya Iwasaki
发明人： Hisaaki Kawade , Tatsuya Iwasaki
IPC分类号： H01J902
CPC分类号： H01J9/027 , H01J2329/00
摘要： In an electron source having a plurality of surfaceconduction electron-emitting devices, the electrical characteristics of the surfaceconduction electron-emitting devices are made, controllable, and uniform. For this purpose, the electron emission characteristic of a selected surfaceconduction electron-emitting device is adjusted with a correction process of applying a voltage higher than a practical driving voltage to the device.
摘要翻译：在具有多个表面积电子发射器件的电子源中，表面传导电子发射器件的电特性被制成，可控制和均匀。为此，通过向设备施加比实际驱动电压高的电压的校正处理来调整所选择的表面传导电子发射器件的电子发射特性。

5. 发明授权

US06283815B1 Electron source and image forming apparatus as well as method of providing the same with means for maintaining activated state thereof 有权
标题翻译：电子源和图像形成装置以及用于保持其激活状态的装置的方法
公开(公告)号：US06283815B1
公开(公告)日：2001-09-04
申请号：US09351001
申请日：1999-07-12
申请人： Tatsuya Iwasaki , Toshikazu Ohnishi
发明人： Tatsuya Iwasaki , Toshikazu Ohnishi
IPC分类号： H01J939
CPC分类号： H01J1/316 , H01J9/027 , H01J2201/3165 , H01J2209/385 , H01J2329/00
摘要： An electron source comprises one or more electron-emitting devices, especially of surface conduction type, and is provided with means for supplying an activating substance to device(s). The means comprises preferably a substance source and a heater or electron beam generator for gasifying the substance source. The electron source can be combined with an image-forming member (e.g. fluorecent body) to constitute an image-forming apparatus. The means is used for in situ activation or re-activation of the electron-emitting device(s).
摘要翻译：电子源包括一个或多个电子发射器件，特别是表面传导型电子发射器件，并且具有用于向器件提供激活物质的装置。该装置优选地包括用于气化物质源的物质源和加热器或电子束发生器。电子源可以与图像形成构件（例如，荧光体）组合以构成图像形成装置。该装置用于原位激活或重新激活电子发射器件。

6. 发明授权

US6160347A Electron source and image forming apparatus as well as method of providing the same with means for maintaining activated state thereof 失效
标题翻译：电子源和图像形成装置以及用于保持其激活状态的装置的方法
公开(公告)号：US6160347A
公开(公告)日：2000-12-12
申请号：US543897
申请日：1995-10-17
申请人： Tatsuya Iwasaki , Toshikazu Ohnishi
发明人： Tatsuya Iwasaki , Toshikazu Ohnishi
IPC分类号： H01J31/12 , H01J1/316 , H01J9/02 , H01J29/04 , H01J1/30
CPC分类号： H01J1/316 , H01J9/027 , H01J2201/3165 , H01J2209/385 , H01J2329/00
摘要： An electron source comprises one or more electron-emitting devices, especially of surface conduction type, and is provided with means for supplying an activating substance to the device(s). The means comprises preferably a substance source and a heater or electron beam generator for gasifying the substance source. The electron source can be combined with an image-forming member (e.g. fluorescent body) to constitute an image-forming apparatus. The means is used for in situ activation or re-activation of the electron-emitting device(s).
摘要翻译：电子源包括一个或多个电子发射器件，特别是表面传导型电子发射器件，并且设置有用于向器件提供激活物质的装置。该装置优选地包括用于气化物质源的物质源和加热器或电子束发生器。电子源可以与图像形成构件（例如荧光体）组合以构成图像形成装置。该装置用于原位激活或重新激活电子发射器件。

7. 发明授权

US08716711B2 Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer 有权
标题翻译：具有非晶氧化物半导体层的薄膜晶体管和薄膜二极管
公开(公告)号：US08716711B2
公开(公告)日：2014-05-06
申请号：US13012125
申请日：2011-01-24
申请人： Tatsuya Iwasaki
发明人： Tatsuya Iwasaki
IPC分类号： H01L29/04
CPC分类号： H01L29/7869
摘要： A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
摘要翻译：一种薄膜晶体管，包括由对可见光透明且具有折射率nx的氧化物半导体形成的沟道层，设置在沟道层的一个面上的栅极绝缘层和设置在另一个面上的透明层的沟道层，折射率为nt，其中nx> nt的关系。一种薄膜晶体管，包括折射率为no的衬底，设置在衬底上的折射率为nt的透明层，以及设置在透明层上并且折射率为nx的沟道层，其中存在 nx> nt> no的关系。

8. 发明申请

US20130214854A1 SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME 审中-公开
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20130214854A1
公开(公告)日：2013-08-22
申请号：US13881266
申请日：2011-10-31
申请人： Katsumi Abe , Hideya Kumomi , Ryo Hayashi , Tatsuya Iwasaki
发明人： Katsumi Abe , Hideya Kumomi , Ryo Hayashi , Tatsuya Iwasaki
IPC分类号： H01L29/786 , G05F3/02
CPC分类号： H01L29/7869 , G05F3/02 , H01L27/0705 , H01L27/11807 , H01L27/1203 , H03K17/063 , H03K17/693 , H03K19/20
摘要： Provided is a semiconductor device, including an electrode, a first insulator, a first semiconductor having a bandgap of 2 eV or greater, a second insulator, and a second semiconductor, which are stacked on one another, and at least further including one or more electrodes in contact with the first semiconductor and two or more electrodes in contact with the second semiconductor.
摘要翻译：提供了一种半导体器件，其包括彼此堆叠的电极，第一绝缘体，具有2eV以上的带隙的第一半导体，第二绝缘体和第二半导体，并且至少进一步包括一个或多个与第一半导体接触的电极和与第二半导体接触的两个或多个电极。

9. 发明授权

US07888684B2 Light emitting device and method of producing light emitting device with a semiconductor includes one of chalcopyrite and oxychacogenide 有权
标题翻译：具有半导体的发光器件和发光器件的制造方法包括黄铜矿和含氧基金属盐之一
公开(公告)号：US07888684B2
公开(公告)日：2011-02-15
申请号：US12162924
申请日：2007-03-15
申请人： Tomoyuki Oike , Tatsuya Iwasaki , Toru Den
发明人： Tomoyuki Oike , Tatsuya Iwasaki , Toru Den
IPC分类号： H01L31/0256 , H01L33/00
CPC分类号： H01L33/285 , H01L33/0087 , H01L33/26
摘要： There has not been a DC drive type light emitting device capable of providing high brightness. The present invention provides a light emitting device, including: a pair of electrodes; a light emitter placed between the electrodes; and a semiconductor laminated to be adjacent to the light emitter, in which the semiconductor contains one of a chalcopyrite and an oxychalcogenide.
摘要翻译：还没有能够提供高亮度的DC驱动型发光装置。本发明提供一种发光器件，包括：一对电极; 位于电极之间的发光体; 以及与发光体相邻的半导体层叠体，其中半导体含有黄铜矿和氧化硫化物之一。

10. 发明授权

US07829444B2 Field effect transistor manufacturing method 有权
标题翻译：场效应晶体管制造方法
公开(公告)号：US07829444B2
公开(公告)日：2010-11-09
申请号：US11269641
申请日：2005-11-09
申请人： Hisato Yabuta , Masafumi Sano , Tatsuya Iwasaki , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Hisato Yabuta , Masafumi Sano , Tatsuya Iwasaki , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L21/20
CPC分类号： H01L29/78618 , H01L29/66969 , H01L29/78693
摘要： Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.
摘要翻译：提供一种用于制造场效应晶体管的新颖方法。在基板上形成无定形氧化物层之前，在臭氧气氛中将紫外线照射到基板表面上，将等离子体照射到基板表面上，或者通过含有过氧化氢的化学溶液清洁基板表面。

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