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1. 发明授权

US6057592A Compound semiconductor epitaxial wafer 失效
标题翻译：化合物半导体外延片
公开(公告)号：US6057592A
公开(公告)日：2000-05-02
申请号：US101431
申请日：1998-10-21
申请人： Masataka Watanabe , Tsuneyuki Kaise , Masayuki Shinohara , Masahisa Endou , Tohru Takahashi
发明人： Masataka Watanabe , Tsuneyuki Kaise , Masayuki Shinohara , Masahisa Endou , Tohru Takahashi
IPC分类号： H01L21/20 , H01L21/203 , H01L21/205 , H01L33/30 , H01L29/167
CPC分类号： H01L33/30 , H01L33/12
摘要： At the time of forming an alloy composition gradient layer 4 of gallium arsenide phosphide GaAs.sub.x P.sub.1-x having an arsenic alloy composition x changed in such a range as not to exceed a predetermined alloy composition a with an increase of a layer thickness d between a GaP layer 3 and a composition constant layer 5 of gallium arsenide phosphide GaAs.sub.a P.sub.1-a having the predetermined alloy composition a to be grown above the GaP layer; the alloy composition x is abruptly ascended as in composition ascending zones C11 to C13 with the ascended thickness d of an epitaxial layer and then descended as in crystal stabilizing zones S11 to S13 in such a range as not to cancel the previous ascent amount. One or more combinations of such ascent and descent in the alloy composition are repeated to form as distributed in the alloy composition gradient layer 4, and then the alloy composition x is ascended to the predetermined alloy composition a. Thereby there is obtained a compound semiconductor epitaxial wafer which can effectively eliminate stresses caused by lattice mismatching, can be made thinner with an excellent productivity, and can have a high luminance due to employment of a reflective layer.
摘要翻译： PCT No.PCT / JP97 / 00050 Sec。 371日期：1998年10月21日 102（e）日期1998年10月21日PCT 1997年1月13日PCT PCT。公开号WO97 / 25747 日期1997年7月17日在形成具有砷合金组成x的砷化镓磷化镓GaAs xP 1-x的合金组成梯度层4的时间在不超过预定合金组成a的范围内变化，层厚增加在GaP层上方生长具有规定的合金组成a的GaP层3和砷化磷化镓GaAsaP1-a的组成恒定层5之间的d; 如同外延层的上升厚度d的组成上升区域C11至C13中的合金组成x突然上升，然后如在晶体稳定区域S11至S13中下降到不消除先前上升量的范围内。重复合金组合物中这种上升和下降的一种或多种组合，以形成分布在合金组成梯度层4中，然后合金组合物x上升到预定的合金组成a。由此，可以获得能有效消除由晶格失配引起的应力的化合物半导体外延晶片，能够以优异的生产率变薄，并且由于使用反射层而具有高的亮度。

2. 发明授权

US5912476A Compound semiconductor epitaxial wafer 失效
标题翻译：化合物半导体外延片
公开(公告)号：US5912476A
公开(公告)日：1999-06-15
申请号：US770500
申请日：1996-12-20
申请人： Masataka Watanabe , Tsuneyuki Kaise , Masayuki Shinohara , Masahisa Endou
发明人： Masataka Watanabe , Tsuneyuki Kaise , Masayuki Shinohara , Masahisa Endou
IPC分类号： H01L21/205 , H01L33/30 , H01L33/00
CPC分类号： H01L33/305 , H01L33/025
摘要： A compound semiconductor epitaxial wafer added with nitrogen to provide a high luminous efficiency. Epitaxial layers are grown on a single crystalline substrate 4 made of gallium phosphide or gallium arsenide to form a compound semiconductor epitaxial wafer EW. The epitaxial layers include at least an nitrogen-added gallium phosphide arsenide mixed crystalline epitaxial layer having an n-type carrier concentration descending gradually toward the uppermost surface of the grown layer in a continuous or stepwise manner before p-type impurity is diffused, and contain an intermediate layer 83 with an n-type carrier concentration of 4.times.10.sup.14 /cm.sup.3 or more and less than 3.5.times.10.sup.15 /cm.sup.3, and a surface layer 84 having an n-type carrier concentration equals to or lower than that for the intermediate layer 83.
摘要翻译：添加氮气的化合物半导体外延晶片以提供高发光效率。外延层在由磷化镓或砷化镓制成的单晶衬底4上生长以形成化合物半导体外延晶片EW。外延层至少包括在p型杂质扩散之前，以连续或逐步的方式逐渐向生长层的最上表面逐渐下降的n型载流子浓度的氮化镓磷化砷混合晶体外延层，并且含有 n型载流子浓度为4×10 14 / cm 3以上且小于3.5×10 15 / cm 3的中间层83和具有n型载流子浓度的表面层84等于或低于中间层83的表面层。

3. 发明授权

US5759264A Method for vapor-phase growth 失效
标题翻译：气相生长方法
公开(公告)号：US5759264A
公开(公告)日：1998-06-02
申请号：US619294
申请日：1996-03-21
申请人： Masataka Watanabe , Tsuneyuki Kaise , Masayuki Shinohara , Masahisa Endo
发明人： Masataka Watanabe , Tsuneyuki Kaise , Masayuki Shinohara , Masahisa Endo
IPC分类号： H01L21/20 , H01L21/203 , H01L21/205 , H01L33/16 , H01L33/30 , C30B25/14
CPC分类号： H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L33/0062 , Y10S117/902
摘要： A method for a vapor-phase growth of a GaAs.sub.1-x P.sub.x epitaxial layer having a uniform thickness is disclosed. This method allows the GaAs.sub.1-x P.sub.x epitaxial layer (wherein x stands for an alloy composition satisfying the expression, 0.ltoreq.x.ltoreq.1) to be formed on a plurality of semiconductor single crystal substrates 1 by setting the semiconductor single crystal substrates 1 in place on a wafer holder 16 disposed inside a vapor-phase growth apparatus 30 in an amount of not less than 70% as the covering ratio of the total surface area of the substrates to the surface area of the wafer holder 16.
摘要翻译：公开了一种具有均匀厚度的GaAs1-xPx外延层的气相生长方法。该方法允许通过设置半导体单晶基板在多个半导体单晶基板1上形成GaAs1-xPx外延层（其中x表示满足表达式0≤x≤1的合金组成） 1在位于气相生长装置30内的晶片保持器16上的适当位置，作为基板的总表面积与晶片保持器16的表面积的覆盖率不小于70％。

4. 发明授权

US06171394B2 Method for manufacturing compound semiconductor epitaxial wafer 失效
标题翻译：化合物半导体外延片的制造方法
公开(公告)号：US06171394B2
公开(公告)日：2001-01-09
申请号：US09081662
申请日：1998-05-20
申请人： Masataka Watanabe , Tsuneyuki Kaise , Masayuki Shinohara
发明人： Masataka Watanabe , Tsuneyuki Kaise , Masayuki Shinohara
IPC分类号： C30B2514
CPC分类号： C30B25/02 , C30B29/40 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/0251 , H01L21/02543
摘要： A method for manufacturing compound semiconductor epitaxial wafer allowing sharp changes in alloy composition and growth of high-quality epitaxial layers. In a process for epitaxially growing a gallium arsenide phosphide GaAs1-xPx alloy composition gradient layer 4 on a compound semiconductor single-crystalline substrate made of gallium phosphide GaP or gallium arsenide GaAs, one group V gas as a source for the group V element not composing the single-crystalline substrate is varied in its supply volume in at least one cycle of sharp increase/moderate decrease, while the other group V gas as a source for the group V element composing the single-crystalline substrate is moderately decreased, thereby achieving at least one cycle of sharp increase/moderate decrease of a product of partial pressures of the group III and group V gases so that at least one set of an increasing zone and a decreasing zone of the alloy composition is formed within the gallium arsenide phosphide GaAs1-xPx alloy composition gradient layer 4.
摘要翻译：一种制造化合物半导体外延晶片的方法，其允许合金组成的急剧变化和高质量外延层的生长。在由磷化镓GaP或砷化镓GaAs制成的化合物半导体单晶衬底上外延生长砷化镓磷化物GaAs1-xPx合金组成梯度层4的方法中，作为不组成V族元素的源的V族气体单晶基板的供给体积在急剧增加/中等下降的至少一个周期内变化，而作为构成单晶基板的V族元素的源的另一组V气体适度地减小，从而达到 III族和V族气体的分压产物急剧增加/中度降低的至少一个循环，使得在砷化镓磷化物GaAs1-4中形成至少一组增加区和减少区的合金组成， xPx合金组成梯度层4。

5. 发明授权

US06184049B2 Method for fabricating compound semiconductor epitaxial wafer and vapor phase growth apparatus using the same 失效
标题翻译：用于制造化合物半导体外延晶片的方法和使用其的气相生长装置
公开(公告)号：US06184049B2
公开(公告)日：2001-02-06
申请号：US09129381
申请日：1998-08-05
申请人： Masataka Watanabe , Tsuneyuki Kaise , Masayuki Shinohara
发明人： Masataka Watanabe , Tsuneyuki Kaise , Masayuki Shinohara
IPC分类号： H01L2100
CPC分类号： C30B25/02 , C30B25/14 , C30B29/40
摘要： A method for fabricating a compound semiconductor epitaxial wafer having a uniform epitaxial layer-thickness distribution independently of positions of compound semiconductor wafers placed within a reaction furnace (19), and a vapor phase growth apparatus for implementing the method. A group III source gas (13) is flowed from a gas inlet (14) of the reaction furnace (19) to a gas outlet (16) thereof, whereas a group V source gas (15) is supplied as dispersedly from a plurality of groups of gas discharge ports (18a, 18b, 18c) provided in a flow direction of the group III source gas (13).
摘要翻译：一种制造具有均匀的外延层厚度分布的化合物半导体外延晶片的方法，其独立于放置在反应炉（19）内的化合物半导体晶片的位置，以及用于实现该方法的气相生长装置。 13）从反应炉（19）的气体入口（14）流到其气体出口（16），而V族气体（15）分散地从多组气体排出口 18a，18b，18c）设置在III族源气体（13）的流动方向上。

6. 发明授权

US09128224B2 Surface light source device 有权
标题翻译：表面光源装置
公开(公告)号：US09128224B2
公开(公告)日：2015-09-08
申请号：US13821198
申请日：2012-03-09
申请人： Gouo Kurata , Masayuki Shinohara
发明人： Gouo Kurata , Masayuki Shinohara
IPC分类号： F21V8/00
CPC分类号： G02B6/0036 , G02B6/0016 , G02B6/0028 , G02B6/0038 , G02B6/0046
摘要： A surface light source device has a light source, and a light guide plate introducing light of the light source from a light incidence surface and emitting the light from a light exit surface to outside. The light source being is provided at a position facing the light incidence surface of the light guide plate. The light guide plate includes a light introducing part for enclosing the light from the light source entering from the light incidence surface and a light guide plate main body having a thickness smaller than a maximum thickness of the light introducing part, provided so as to be continued to the light introducing part, and emitting the enclosed light from the light exit surface by light emitting portion to outside.
摘要翻译：面光源装置具有光源和导光板，该光导板从光入射面引入光源的光，并将光从光出射面发射到外部。光源设置在与导光板的光入射面相对的位置。导光板包括用于封闭来自光入射面的光源的光的导光部和具有比光导入部的最大厚度小的厚度的导光板主体，该导光板主体被设置为继续并且通过发光部将来自光出射面的封闭光发射到外部。

7. 发明授权

US09009342B2 Network relay apparatus 有权
标题翻译：网络中继装置
公开(公告)号：US09009342B2
公开(公告)日：2015-04-14
申请号：US13587039
申请日：2012-08-16
申请人： Yoshihiro Nakao , Shinichi Akahane , Masayuki Shinohara , Atsushi Serizawa
发明人： Yoshihiro Nakao , Shinichi Akahane , Masayuki Shinohara , Atsushi Serizawa
IPC分类号： G06F15/16 , H04L12/10 , H04L12/701 , H04L12/713 , H04L12/801 , H04L12/803 , H04L12/933
CPC分类号： H04L12/10 , H04L45/00 , H04L45/586 , H04L47/10 , H04L47/125 , H04L49/1553
摘要： A network relay apparatus which conducts data transfer by using a plurality of network LSIs includes a transfer engine unit having at least two network LSIs and a central control unit which controls the operation state of the network relay apparatus. The transfer engine unit includes the network LSIs capable of changing over at least one of a clock and an operation which differ every function block, a load judgment unit for judging a load laid upon each of function blocks in the network LSI, and a frequency voltage control unit for individually changing over at least one of the clock and operation voltage supplied to each function block on the basis of the load judged by the load judgment unit.
摘要翻译：通过使用多个网络LSI进行数据传送的网络中继装置包括：具有至少两个网络LSI的传送引擎单元和控制网络中继装置的动作状态的中央控制单元。传送引擎单元包括能够切换每个功能块不同的时钟和操作中的至少一个的网络LSI，用于判断布置在网络LSI中的每个功能块上的负载的负载判断单元和频率电压控制单元，用于基于由负载判断单元判断的负载单独地改变提供给每个功能块的时钟和操作电压中的至少一个。

8. 发明申请

US20110286237A1 SURFACE LIGHT SOURCE DEVICE 有权
标题翻译：表面光源设备
公开(公告)号：US20110286237A1
公开(公告)日：2011-11-24
申请号：US13162106
申请日：2011-06-16
申请人： Yasuhiro Tanoue , Gouo Kurata , Masayuki Shinohara
发明人： Yasuhiro Tanoue , Gouo Kurata , Masayuki Shinohara
IPC分类号： F21V8/00
CPC分类号： G02B6/0021 , G02B6/0016 , G02B6/0018 , G02B6/002 , G02B6/0028 , G02B6/0031 , G02B6/0038 , G02F1/133615
摘要： A light guide plate is formed of a light introducing part positioned to face a point light source for confining light and a light guide plate body having a thickness smaller than the thickness of an end of the light introducing part on a point light source side and causing the confined light to be output from a light exit surface to outside. The light introducing part has an inclined surface, and a directivity conversion pattern formed on the inclined surface. The directivity conversion pattern is configured by arranging V grooves in parallel to each other, each having a vertical angle of 120°, and each extends in a direction approximately perpendicular to a light incidence end face of the light guide plate. The length of the inclined surface in a inclination direction where part of light incident to the light introducing part enters the inclined surface at least twice.
摘要翻译：导光板由位于面对用于限制光的点光源的光引入部和具有比点光源侧的光导入部的端部的厚度小的导光板主体形成，并且导致被限制的光从光出射表面输出到外部。光引入部分具有倾斜表面和形成在倾斜表面上的方向性转换图案。方向性转换图案通过将V沟槽彼此平行布置而构成，每个V形槽具有120°的垂直角，并且各自沿与导光板的光入射端面大致垂直的方向延伸。入射到光导入部的光的倾斜方向的倾斜面的长度进入倾斜面至少两次。

9. 发明申请

US20080198621A1 Optical Sheet and Surface Light Source Device 审中-公开
标题翻译：光学片和表面光源装置
公开(公告)号：US20080198621A1
公开(公告)日：2008-08-21
申请号：US11662784
申请日：2005-09-09
申请人： Yasuhiro Tanoue , Masayuki Shinohara
发明人： Yasuhiro Tanoue , Masayuki Shinohara
IPC分类号： F21V7/04 , G02B27/10
CPC分类号： G02B6/0056 , G02B5/045 , G02B5/124 , G02B6/0021 , G02B6/0036 , G02B6/0038 , G02F1/133615 , G02F2001/133342
摘要： A semi-permeable/reflective sheet (19) has a lower surface as a flag light incident surface (47) and a surface opposite to the light incident surface (47) where a light reflection area (43a) and a light transmittance area (43b) are provided. The light transmittance area (43b) is a flat surface parallel to the light incident surface (47). The light reflection area (43a) is formed by a convex pattern (42) having a cross section of a rectangular equilateral triangular shape. A part of light (41) coming from the light incident surface (47) to the light transmittance area (43b) transmits the semi-permeable/reflective sheet (19) and goes out of the surface opposite to the light incident surface (47). A part of the remaining light (41) incident from the light incident surface (47) is reflected twice by reflection walls (44, 45) forming the convex pattern (42). The light reflected by the reflection walls (44, 45) is emitted in parallel to the previous incident direction and in the reverse direction to the incident light.
摘要翻译：半透光性反射片（19）具有作为标志光入射面（47）的下表面和与光入射面（47）相反的面，其中光反射区域（43a）和透光率区域 43 b）。光透射区域（43b）是与光入射面（47）平行的平坦面。光反射区域（41a）由具有矩形等边三角形形状的横截面的凸形图案（42）形成。从光入射面（47）到透光区域（43b）的一部分光（41）透射半透射反射片（19），并从与光入射面（47）相反的面）。从光入射面（47）入射的剩余光（41）的一部分被形成凸图案（42）的反射壁（44,45）反射两次。由反射壁（44,45）反射的光与前一个入射方向平行并且与入射光反向发射。

10. 发明授权

US07121709B2 Surface light source device, diffusion plate and liquid crystal display device 有权
标题翻译：表面光源装置，扩散板和液晶显示装置
公开(公告)号：US07121709B2
公开(公告)日：2006-10-17
申请号：US10340571
申请日：2003-01-10
申请人： Masayuki Shinohara , Tetsuya Minobe , Isao Makuta , Yoshihiro Ueno , Mamoru Yabe
发明人： Masayuki Shinohara , Tetsuya Minobe , Isao Makuta , Yoshihiro Ueno , Mamoru Yabe
IPC分类号： G02B6/00
CPC分类号： G02B6/0036 , G02B6/0038 , G02B6/0051 , G02B6/0053 , G02B6/0061 , G02F1/133615 , G02F2001/133607
摘要： A point-light-source type light emitting portion faces a light incident face located at a corner portion of a light guide plate. A light diffusion pattern for emitting the light in the light guide plate from a light emission face is on the lower surface of the light guide plate. A diffusion prism sheet is on the light emission face. A prism sheet including prisms each having a concentric shape with the light emitting portion at the center is on the lower surface of the diffusion prism sheet, and an uneven diffusion plate is on the upper surface of the diffusion prism sheet. Light emitted from the light emission face of the light guide plate along the light emission face is deflected in the direction perpendicular to the light guide plate by the prism sheet, and the angle of beam spread of the light is spread by the uneven diffusion plate.
摘要翻译：点光源型发光部面对位于导光板的角部的光入射面。在导光板的下表面上，从发光面发射光的光扩散图案。扩散棱镜片在发光面上。在扩散棱镜片的下表面上，包括具有中心的发光部分的同心形状的棱镜的棱镜片，扩散棱镜片的上表面上具有不均匀漫射板。从导光板的发光面沿着发光面发射的光沿着与棱镜片垂直的导光板的方向偏转，并且光的扩散角度被不均匀扩散板扩展。

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