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    • 8. 发明授权
    • Engine controller
    • 发动机控制器
    • US07561435B2
    • 2009-07-14
    • US11768401
    • 2007-06-26
    • Masaru KamoshidaMasahiro SasakiTakeshi IgarashiMasahiko Asano
    • Masaru KamoshidaMasahiro SasakiTakeshi IgarashiMasahiko Asano
    • H05K5/06H05K5/02
    • H05K5/062H05K5/0052
    • There is proposed an engine controller which is excellent in reliability in that the outer peripheral edge face (cut surface) of covering member can be prevented from being rusted while securing the water-proofness and dust-proofness. This engine controller comprises a circuit board (12) for controlling an engine; an aluminum die-cast main case body (20) having an open top; and a covering member (30) made of an iron-based metal plate which is preliminarily applied with surface treatment, the covering member (30) being fixedly clamped to the main case body (20) by means of a setscrew (40) so as to hermetically close the open top of the main case body (20); wherein the main case body (20) is provided thereon with a pedestal (24) or groove (25) on which a liquid or jellied water-proofing adhesive (50) is coated or filled (piled), thereby enabling entire outer peripheral edge face (33a) of the covering member (30) to be covered by the water-proofing adhesive (50).
    • 提出了一种可靠性优异的发动机控制器,可以防止覆盖部件的外周缘(切割面)在防水性和防尘性的同时防止生锈。 该发动机控制器包括用于控制发动机的电路板(12) 具有开口顶部的铝压铸主壳体(20) 以及预先进行表面处理的铁基金属板制成的覆盖部件(30),所述覆盖部件(30)通过固定螺丝(40)固定地夹在主壳体(20)上,以便 以封闭主壳体(20)的开口顶部; 其中,所述主壳体(20)上设置有基座(24)或凹槽(25),液体或凝胶状防水粘合剂(50)被涂覆或填充(堆叠),从而使得整个外周边缘面 (30)的被防水粘合剂(50)覆盖的(33a)。
    • 9. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US07560346B2
    • 2009-07-14
    • US11727962
    • 2007-03-29
    • Takeshi Igarashi
    • Takeshi Igarashi
    • H01L21/336H01L29/76
    • H01L27/0207H01L27/0605H01L27/088H01L29/41758H01L29/42316
    • A semiconductor device includes: a first FET that is formed with first unit FETs each having a first finger electrode and a second finger electrode provided on either side of a gate finger electrode, the first unit FETs being connected in parallel; and a second FET that is formed with second unit FETs each having a first finger electrode and a second finger electrode provided on either side of a gate finger electrode, the second unit FETs being connected in parallel. In this semiconductor device, the second finger electrode of each of the first unit FETs and the first finger electrode of each corresponding one of the second unit FETs form a common finger electrode, and the first finger electrodes of the first unit FETs, the second finger electrodes of the second unit FETs, and the common finger electrodes are arranged in the gate length direction of the first FET and the second FET.
    • 半导体器件包括:第一FET,其形成有第一单元FET,每个第一单元FET具有设置在栅极指电极的任一侧上的第一指状电极和第二指状电极,所述第一单元FET并联连接; 以及第二FET,其由具有设置在栅极指状电极的任一侧上的第一指状电极和第二指状电极的第二单位FET形成,所述第二单位FET并联连接。 在该半导体器件中,第一单位FET中的每一个的第二指状电极和每个对应的一个第二单位FET的第一指状电极形成公共指状电极,并且第一单位FET的第一指状电极,第二指状物 第二单元FET的电极和公共指状电极排列在第一FET和第二FET的栅极长度方向上。