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    • 8. 发明授权
    • Silicone compound and process for producing the same
    • 硅酮化合物及其制备方法
    • US07683206B2
    • 2010-03-23
    • US10590850
    • 2005-02-25
    • Kazuhiko FujisawaTsutomu GoshimaMitsuru Yokota
    • Kazuhiko FujisawaTsutomu GoshimaMitsuru Yokota
    • C07F7/08C07C30/08C08G77/38
    • C08G77/14C07F7/0838
    • This invention provides a process for producing of a silicone compound which includes a synthesis reaction of a silicone compound represented by the following formulas (a) and/or (a′), by reacting a carboxylic acid represented by the following formula (a2) to an epoxy silane represented by the following formula (a1) in presence of a metal salt of the carboxylic acid represented by the general formula (a2), characterized in that the reaction is carried out in presence of 0.05 wt % or more water in said reaction system. Here, A denotes siloxanyl group. R1 denotes a substitutent with 1 to 20 carbons having a polymerizable group. R2 to R4 respectively and independently denote hydrogen, a substituted or unsubstituted substitutent with 1 to 20 carbons, or —X-A. X denotes a substituted or unsubstituted divalent substitutent with 1 to 20 carbons.
    • 本发明提供一种硅氧烷化合物的制造方法,其包括由下式(a)和/或(a')表示的硅氧烷化合物的合成反应,将下式(a2)表示的羧酸与 在由通式(a2)表示的羧酸的金属盐的存在下,由下式(a1)表示的环氧硅烷,其特征在于,所述反应在所述反应中在0.05重量%以上的水的存在下进行 系统。 这里,A表示硅氧烷基。 R1表示具有可聚合基团的具有1至20个碳的取代基。 R2至R4分别独立地表示氢,取代或未取代的碳原子数1〜20的取代基或-X-A。 X表示具有1至20个碳的取代或未取代的二价取代基。
    • 9. 发明授权
    • Method of forming a printed wiring board with compensation scales
    • 形成具有补偿标尺的印刷线路板的方法
    • US06316731B1
    • 2001-11-13
    • US09442382
    • 1999-11-17
    • Tsutomu Goshima
    • Tsutomu Goshima
    • H05K100
    • H05K1/0269H05K3/3452H05K2203/163H05K2203/166
    • The present invention provides a printed wiring board formed with a film thereon, wherein the printed wiring board has at least a first reference mark and at least a first scale mark separated from the first reference mark, and the film has at least a second reference mark and at least a second scale mark separated from the second reference mark, and the second scale is positioned to overlap the first scale, and the first scale mark has a first scale and the second scale mark has a second scale which is so different from the first scale as to allow measuring a necessary amount of compensation in alignment to the film with reference to the printed wiring board.
    • 本发明提供一种在其上形成有膜的印刷线路板,其中印刷线路板至少具有第一参考标记和至少与第一参考标记分开的第一刻度标记,并且该膜具有至少第二参考标记 以及与第二参考标记分开的至少第二刻度尺,并且第二刻度被定位成与第一刻度重叠,并且第一刻度具有第一刻度,并且第二刻度具有与第二刻度非常不同的第二刻度 第一刻度,以允许测量与胶片相对于印刷线路板对准的必要量的补偿。
    • 10. 发明申请
    • Silicone compound and process for producing the same
    • 硅酮化合物及其制备方法
    • US20070191621A1
    • 2007-08-16
    • US10590850
    • 2005-02-25
    • Kazuhiko FujisawaTsutomu GoshimaMitsuru Yokota
    • Kazuhiko FujisawaTsutomu GoshimaMitsuru Yokota
    • C07F7/08
    • C08G77/14C07F7/0838
    • This invention provides a process for producing of a silicone compound which includes a synthesis reaction of a silicone compound represented by the following formulas (a) and/or (a′), by reacting a carboxylic acid represented by the following formula (a2) to an epoxy silane represented by the following formula (a1) in presence of a metal salt of the carboxylic acid represented by the general formula (a2), characterized in that the reaction is carried out in presence of 0.05 wt % or more water in said reaction system. Here, A denotes siloxanyl group. R1 denotes a substitutent with 1 to 20 carbons having a polymerizable group. R2 to R4 respectively and independently denote hydrogen, a substituted or unsubstituted substitutent with 1 to 20 carbons, or —X-A. X denotes a substituted or unsubstituted divalent substitutent with 1 to 20 carbons.
    • 本发明提供一种硅氧烷化合物的制造方法,其包括由下式(a)和/或(a')表示的硅氧烷化合物的合成反应,将下式(a2)表示的羧酸与 在由通式(a2)表示的羧酸的金属盐的存在下,由下式(a1)表示的环氧硅烷,其特征在于,所述反应在所述反应中在0.05重量%以上的水的存在下进行 系统。 这里,A表示硅氧烷基。 R 1表示具有可聚合基团的具有1至20个碳的取代基。 R 2分别独立地表示氢,取代或未取代的碳原子数1〜20的取代基或-X-A。 X表示具有1至20个碳的取代或未取代的二价取代基。