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1. 发明授权

US4939591A Contact-type image sensor 失效
公开(公告)号：US4939591A
公开(公告)日：1990-07-03
申请号：US209882
申请日：1988-06-22
申请人： Masataka Itoh , Atsushi Yoshinouchi , Satoshi Nishigaki , Takashi Nukii , Shuhei Tsuchimoto
发明人： Masataka Itoh , Atsushi Yoshinouchi , Satoshi Nishigaki , Takashi Nukii , Shuhei Tsuchimoto
IPC分类号： H04N1/028 , H01L27/146 , H04N1/031
CPC分类号： H04N1/0312 , H04N1/0311 , H04N1/0316
摘要： A contact-type image sensor comprising a light source that illuminates the manuscript to be read; photodetectors that convert the light reflected by the manuscript into an electrical signal; a substrate that is disposed between the photodetectors and the manuscript, a bundle of optical fibers being buried in the substrate; and wiring electrodes that are disposed on the top surface of the substrate corresponding to the light-emitting face of the bundle of optical fibers and that are disposed on the light-receiving surfaces of the photodetectors, wherein the photodetectors are disposed in such a manner that the light-receiving surfaces of the photodetectors face the light-emitting face of the bundle of optical fibers, the wiring electrodes disposed on the photodetectors being electrically bonded to the wiring electrodes disposed on the substrate.

2. 发明授权

US4942481A Contact-type image sensor 失效
标题翻译：接触式图像传感器
公开(公告)号：US4942481A
公开(公告)日：1990-07-17
申请号：US217681
申请日：1988-07-11
申请人： Atsushi Yoshinouchi , Masataka Itoh , Shuhei Tsuchimoto , Keiji Tarui , Satoshi Nishigaki
发明人： Atsushi Yoshinouchi , Masataka Itoh , Shuhei Tsuchimoto , Keiji Tarui , Satoshi Nishigaki
IPC分类号： H04N1/031 , H04N1/40
CPC分类号： H04N1/0312 , H04N1/0311 , H04N1/0316
摘要： A contact-type image sensor comprising a light source that illuminates the manuscript to be read; photodetectors that convert the light reflected by the manuscript into an electrical signal; a substrate that is disposed between the photodetectors and the manuscript; an optical fiber array that is constituted by a bundle of optical fibers that are buried in the substrate, the optical fiber array introducing the reflected light from the manuscript into the light-receiving surfaces of the photodetectors; and a light-absorbing substance that is disposed on the outer surface of each of the optical fibers, wherein the light-absorbing substance is disposed on the outer surface of each of the optical fibers, except for the region with a given length from the end of the optical fiber array that faces the manuscript.

3. 发明授权

US5004905A Contact type image sensor with a fiber array coated in part with an absorber 失效
标题翻译：具有部分涂覆有吸收体的纤维阵列的接触式图像传感器
公开(公告)号：US5004905A
公开(公告)日：1991-04-02
申请号：US432995
申请日：1989-11-08
申请人： Atsushi Yoshinouchi , Masataka Itoh , Shuhei Tsuchimoto
发明人： Atsushi Yoshinouchi , Masataka Itoh , Shuhei Tsuchimoto
IPC分类号： H04N1/031
CPC分类号： H04N1/02865 , H04N1/0311 , H04N1/0312 , H04N1/0316
摘要： A contact type image sensor comprising a light-detecting element array formed on a substrate, a light source for irradiating an original to be read, and an optical fiber array disposed between said light-detecting element array and said original to be read, said optical fiber array being formed by laminating an optical fiber array member that is composed of optical fibers not coated with an absorber on an optical fiber array member that is composed of optical fibers coated with an absorber, said optical fibers being disposed between said light-detecting element array and said original to be read, and said light source being disposed at the light emission side of said optical fiber array, thereby attaining a precise irradiation of an original with light from a light source and reliably shuts off the leakage to maintain excellent resolution characteristics of the sensor.

4. 发明授权

US4759951A Heat-treating Cd-containing photoelectric conversion film in the presence of a cadmium halide 失效
标题翻译：在卤化镉存在下热处理含Cd光电转换膜
公开(公告)号：US4759951A
公开(公告)日：1988-07-26
申请号：US910875
申请日：1986-09-23
申请人： Masataka Itoh , Masaya Nagata , Shuhei Tsuchimoto , Atsushi Yoshinouchi , Hiroshi Wada , Katsushi Okibayashi , Soji Ohhara
发明人： Masataka Itoh , Masaya Nagata , Shuhei Tsuchimoto , Atsushi Yoshinouchi , Hiroshi Wada , Katsushi Okibayashi , Soji Ohhara
IPC分类号： H01L31/09 , H01L31/18 , B05D5/12 , H01L31/00
CPC分类号： H01L31/1832 , H01L31/09 , H01L31/1828 , Y02E10/543
摘要： A process for producing a photoelectric conversion film comprising heat-treating a coating (A) of a photoconductive material composed chiefly of at least one of CdSe, CdS, CdTe, CdS.sub.x Se.sub.1-x and CdS.sub.x Te.sub.1-x wherein x is a real number of less than 1, opposite from a coating (B) in proximity thereto, the coating (B) being made of a material composed chiefly of CdS and a Cd halide.
摘要翻译：一种制造光电转换膜的方法，包括热处理主要由CdSe，CdS，CdTe，CdSxSe1-x和CdSxTe1-x中的至少一种组成的光电导材料的涂层（A），其中x是小于如图1所示，与其附近的涂层（B）相反，涂层（B）由主要由CdS和Cd卤化物组成的材料制成。

5. 发明授权

US5585817A Apparatus and a method for inputting/outputting an image 失效
标题翻译：用于输入/输出图像的装置和方法
公开(公告)号：US5585817A
公开(公告)日：1996-12-17
申请号：US63951
申请日：1993-05-20
申请人： Masataka Itoh , Tatsuo Morita , Shuhei Tsuchimoto
发明人： Masataka Itoh , Tatsuo Morita , Shuhei Tsuchimoto
IPC分类号： G02F1/133 , G02F1/135 , G09G3/36 , H01L27/146 , H04N1/028
CPC分类号： H04N1/02805 , G02F1/1354 , H04N1/028
摘要： A device and a method for inputting/outputting an image are disclosed. The device includes: an image display section which selectively transmits light; and an image input section having a photodetective portion for converting part of the light which has been transmitted through the image display section and reflected from an original surface to be imaged, into an electric signal. The method is performed by using the device.
摘要翻译：公开了一种用于输入/输出图像的装置和方法。该装置包括：选择性地透射光的图像显示部; 以及图像输入部分，具有用于将已经透过图像显示部分并被从要成像的原始表面反射的部分光转换为电信号的光电检测部分。该方法通过使用该装置来执行。

6. 发明授权

US4644406A Large scale contact type image reading unit using two-dimensional sensor array 失效
标题翻译：大尺寸接触式图像读取单元采用二维传感器阵列
公开(公告)号：US4644406A
公开(公告)日：1987-02-17
申请号：US696089
申请日：1985-01-29
申请人： Satoshi Nishigaki , Masataka Itoh , Shohichi Katoh
发明人： Satoshi Nishigaki , Masataka Itoh , Shohichi Katoh
IPC分类号： H01L27/146 , H01L31/0224 , H01L31/105 , H04N1/028 , H04N1/195 , H01L27/14
CPC分类号： H04N1/02805 , H01L27/14643 , H01L27/14665 , H01L31/022408 , H01L31/1055 , H04N1/028 , H04N1/195
摘要： A two-dimensional image reading unit includes a semiconductor layer made of a photoelectric material having a pin structure, a plurality of transparent electrodes aligned parallel to each other and provided on one face of the semiconductor layer, and a plurality of opaque electrodes aligned parallel to each other and provided on the other face of the semiconductor layer such that the opaque electrodes intercept with the transparent electrodes. A photoelectric cell is defined at each crossing point of the transparent and opaque electrodes.
摘要翻译：二维图像读取单元包括由具有pin结构的光电材料制成的半导体层，彼此平行排列并且设置在半导体层的一个面上的多个透明电极以及与彼此并且设置在半导体层的另一面上，使得不透明电极与透明电极截距。在透明和不透明电极的每个交叉点处限定光电池。

7. 发明授权

US4597012A Two-dimensional image read-out sensor device 失效
标题翻译：二维图像读出传感器装置
公开(公告)号：US4597012A
公开(公告)日：1986-06-24
申请号：US673618
申请日：1984-11-21
申请人： Masataka Itoh , Satoshi Nishigaki , Shohichi Katoh
发明人： Masataka Itoh , Satoshi Nishigaki , Shohichi Katoh
IPC分类号： H01L27/146 , H04N1/028 , H04N1/195 , H04N5/335 , H04N5/374
CPC分类号： H04N1/19515 , H01L27/14665 , H04N1/028 , H04N1/19505 , H04N1/19584
摘要： A two-dimensional image read-out device comprises an insulating substrate, a plurality of Y-line electrodes formed on the insulating substrate and arranged parallel with each other, a plurality of X-line electrodes formed over the insulating substrate and arranged parallel with each other in a direction perpendicular to the Y-line electrodes, a photoconductive layer interposed between the Y-line and the X-line electrodes, gate electrodes for selecting a pair of the Y-line and the X-line electrodes, and three scanning circuits for selecting some of the Y-line electrodes, and some of the X-line electrodes, and at least one of the gate electrodes, respectively.
摘要翻译：二维图像读取装置包括绝缘基板，形成在绝缘基板上并且彼此平行布置的多个Y线电极，多个X线电极，形成在绝缘基板上并平行于每个另外在与Y线电极垂直的方向上，插入在Y线和X线电极之间的光电导层，用于选择一对Y线和X线电极的栅电极和三条扫描电路用于分别选择一些Y线电极和一些X线电极，以及至少一个栅电极。

8. 发明授权

US07764273B2 Touch panel for mounting on a display panel 有权
标题翻译：触摸面板用于安装在显示面板上
公开(公告)号：US07764273B2
公开(公告)日：2010-07-27
申请号：US11020197
申请日：2004-12-27
申请人： Chien-Sen Weng , Masataka Itoh
发明人： Chien-Sen Weng , Masataka Itoh
IPC分类号： G06F3/041 , G06F3/044
CPC分类号： G06F3/047 , G06F3/0416 , G06K9/0002
摘要： A touch panel includes a TFT array having a plurality of thin film transistors; a plurality of signal lines disposed within the TFT array, each of the signal lines being electrically connected to a respective one of the transistors; a transparent conductive pattern layer disposed above the plurality of signal lines and electrically connected to each of the transistors; a flexible conductive layer; and a spacing pattern layer supporting flexible conductive layer to space the flexible conductive layer apart from the transparent conductive pattern layer. When pressure is applied onto the flexible conductive layer, the flexible conductive layer contacts the transparent conductive pattern layer to transmit an electrical signal via the signal lines into the TFTs to indicate the point of contact.
摘要翻译：触摸面板包括具有多个薄膜晶体管的TFT阵列; 设置在TFT阵列内的多条信号线，每条信号线电连接到晶体管的相应一个; 透明导电图案层，其设置在所述多个信号线上方并电连接到所述晶体管中的每一个; 柔性导电层; 以及支撑柔性导电层以将柔性导电层与透明导电图案层隔开的间隔图案层。当压力施加到柔性导电层上时，柔性导电层接触透明导电图案层，以经由信号线将电信号传输到TFT中以指示接触点。

9. 发明授权

US06784495B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06784495B2
公开(公告)日：2004-08-31
申请号：US10291081
申请日：2002-11-08
申请人： Jun Koyama , Hidehito Kitakado , Masataka Itoh , Hiroyuki Ogawa
发明人： Jun Koyama , Hidehito Kitakado , Masataka Itoh , Hiroyuki Ogawa
IPC分类号： H01L2701
CPC分类号： H01L27/12 , H01L27/1248 , H01L29/78603
摘要： The present invention has provided on a back channel side of the TFT a blocking layer that is formed by laminating a 50 nm to 100 nm thick silicon oxynitride film (A) and a 30 nm to 70 nm thick silicon oxynitride film (B). By forming a lamination structure of such silicon oxynitride films, not only can be the contaminations caused by impurities such as alkali metallic elements from the substrate prevented, but the fluctuations in the electrical characteristics of the TFT can be reduced.
摘要翻译：本发明在TFT的背沟侧提供了通过层叠50nm至100nm厚的氮氧化硅膜（A）和30nm至70nm厚的氮氧化硅膜（B）而形成的阻挡层。通过形成这种氮氧化硅膜的层压结构，不仅可以防止由来自基板的碱金属元素等杂质引起的污染，还可以降低TFT的电特性的波动。

10. 外观设计

USD406398S Clip for a wig or hairpiece 失效
公开(公告)号：USD406398S
公开(公告)日：1999-03-02
申请号：US77206
申请日：1997-09-29
申请人： Masanori Kageyama , Masataka Itoh
设计人： Masanori Kageyama , Masataka Itoh

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