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1. 发明授权

US07931820B2 Dry etching gas and method for dry etching 有权
标题翻译：干蚀刻气体和干蚀刻方法
公开(公告)号：US07931820B2
公开(公告)日：2011-04-26
申请号：US10362973
申请日：2001-09-05
申请人： Masataka Hirose , Shingo Nakamura , Mitsushi Itano , Hirokazu Aoyama
发明人： Masataka Hirose , Shingo Nakamura , Mitsushi Itano , Hirokazu Aoyama
IPC分类号： C23F1/00 , B44C1/22 , C03C15/00 , C03C25/68
CPC分类号： H01L21/76802 , H01L21/31056 , H01L21/31116
摘要： A dry etching gas that comprises a compound having a CF3CF fragment directly bonded to a double bond (provided that the compound is exclusive of CF3CF═CFCF═CF2). Said dry etching gas permits the formation of a pattern such as a contact hole with a high aspect ratio.
摘要翻译：干蚀刻气体，其包含具有直接键合到双键的CF 3 CF片段的化合物（条件是该化合物不包括CF 3CF≡CFCF≡CF2）。所述干蚀刻气体允许形成具有高纵横比的接触孔的图案。

2. 发明授权

US07833957B2 Removing solution 有权
标题翻译：清除解决方案
公开(公告)号：US07833957B2
公开(公告)日：2010-11-16
申请号：US10525249
申请日：2003-08-21
申请人： Mitsushi Itano , Takashi Kanemura , Shingo Nakamura , Fumihiro Kamiya , Takehiko Kezuka
发明人： Mitsushi Itano , Takashi Kanemura , Shingo Nakamura , Fumihiro Kamiya , Takehiko Kezuka
IPC分类号： C11D7/50
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/24 , C11D7/263 , C11D7/264 , C11D7/265 , C11D7/28 , C11D7/32 , C11D7/3263 , C11D7/34 , C11D11/0047 , G03F7/42 , G03F7/422 , G03F7/423 , G03F7/425 , G03F7/426 , G03F7/428 , H01L21/02071 , H01L21/31133 , H01L21/31138 , H01L21/76802 , H01L21/76838 , H05K3/26
摘要： The present invention provides a resist-removing solution for low-k film and a cleaning solution for via holes or capacitors, the solutions comprising hydrogen fluoride (HF) and at least one member selected from the group consisting of organic acids and organic solvents. The invention also provides a method of removing resist and a method of cleaning via holes or capacitors by the use of the solutions.
摘要翻译：本发明提供了一种用于低k膜的抗蚀剂去除溶液和用于通孔或电容器的清洗溶液，所述溶液包含氟化氢（HF）和选自有机酸和有机溶剂中的至少一种。本发明还提供一种通过使用溶液去除抗蚀剂的方法和清洁通孔或电容器的方法。

3. 发明申请

US20100112821A1 ETCHING SOLUTION 有权
标题翻译：蚀刻解决方案
公开(公告)号：US20100112821A1
公开(公告)日：2010-05-06
申请号：US12595424
申请日：2008-04-08
申请人： Mitsushi Itano , Shingo Nakamura , Takehiko Kezuka , Daisuke Watanabe
发明人： Mitsushi Itano , Shingo Nakamura , Takehiko Kezuka , Daisuke Watanabe
IPC分类号： H01L21/306 , C09K13/08
CPC分类号： C09K13/08 , C09K13/00 , C09K13/06 , C09K15/00 , H01L21/02052 , H01L21/02063 , H01L21/30604 , H01L21/31053 , H01L21/31105 , H01L21/31111 , H01L21/31133 , H01L21/32134 , H01L21/76814
摘要： The present invention provides an etching solution in which a change in the composition due to the evaporation of the chemical solution or the like is small, thus reducing the frequency with which the chemical solution must be replaced, and in which the time-dependent change in etch rate is also small, thus allowing uniform etching of a silicon oxide film. Specifically, the present invention relates to an etching solution, a process of producing the same, and an etching process using the same, in which the etching solution includes hydrofluoric acid (a), ammonium fluoride (b), and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia; the concentration of ammonium fluoride (b) is not higher than 8.2 mol/kg, and the total amount of ammonium fluoride (b) and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia is not less than 9.5 mol/kg.
摘要翻译：本发明提供了一种蚀刻溶液，其中由于化学溶液等的蒸发而导致的组成变化小，从而降低了化学溶液必须被更换的频率，并且其中时间依赖性变化蚀刻速率也很小，从而允许均匀蚀刻氧化硅膜。具体地说，本发明涉及一种蚀刻溶液及其制造方法及使用该方法的蚀刻方法，其中蚀刻溶液包括氢氟酸（a），氟化铵（b）和形成的盐（c）在氟化氢和沸点高于氨的沸点之间; 氟化铵（b）的浓度不高于8.2mol / kg，氟化氢和沸点高于氨的碱之间形成的氟化铵（b）和盐（c）的总量不是小于9.5mol / kg。

4. 发明申请

US20060138399A1 Removing solution 有权
标题翻译：清除解决方案
公开(公告)号：US20060138399A1
公开(公告)日：2006-06-29
申请号：US10525249
申请日：2003-08-21
申请人： Mitsushi Itano , Takashi Kanemura , Shingo Nakamura , Fumihiro Kamiya , Takehiko Kezuka
发明人： Mitsushi Itano , Takashi Kanemura , Shingo Nakamura , Fumihiro Kamiya , Takehiko Kezuka
IPC分类号： H01L29/08 , C11D11/00
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/24 , C11D7/263 , C11D7/264 , C11D7/265 , C11D7/28 , C11D7/32 , C11D7/3263 , C11D7/34 , C11D11/0047 , G03F7/42 , G03F7/422 , G03F7/423 , G03F7/425 , G03F7/426 , G03F7/428 , H01L21/02071 , H01L21/31133 , H01L21/31138 , H01L21/76802 , H01L21/76838 , H05K3/26
摘要： The present invention provides a resist-removing solution for low-k film and a cleaning solution for via holes or capacitors, the solutions comprising hydrogen fluoride (HF) and at least one member selected from the group consisting of organic acids and organic solvents. The invention also provides a method of removing resist and a method of cleaning via holes or capacitors by the use of the solutions.
摘要翻译：本发明提供了一种用于低k膜的抗蚀剂去除溶液和用于通孔或电容器的清洗溶液，所述溶液包含氟化氢（HF）和选自有机酸和有机溶剂中的至少一种。本发明还提供一种通过使用溶液去除抗蚀剂的方法和清洁通孔或电容器的方法。

5. 发明授权

US09399734B2 Etching solution 有权
标题翻译：蚀刻溶液
公开(公告)号：US09399734B2
公开(公告)日：2016-07-26
申请号：US12595424
申请日：2008-04-08
申请人： Mitsushi Itano , Shingo Nakamura , Takehiko Kezuka , Daisuke Watanabe
发明人： Mitsushi Itano , Shingo Nakamura , Takehiko Kezuka , Daisuke Watanabe
IPC分类号： C09K13/08 , H01L21/02 , H01L21/306 , H01L21/3105 , H01L21/311 , H01L21/3213 , H01L21/768 , C09K15/00 , C09K13/00 , C09K13/06
CPC分类号： C09K13/08 , C09K13/00 , C09K13/06 , C09K15/00 , H01L21/02052 , H01L21/02063 , H01L21/30604 , H01L21/31053 , H01L21/31105 , H01L21/31111 , H01L21/31133 , H01L21/32134 , H01L21/76814
摘要： An etching solution, a process of producing the same, and an etching process using the same, in which the etching solution includes hydrofluoric acid (a), ammonium fluoride (b), and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia; the concentration of ammonium fluoride (b) is not higher than 8.2 mol/kg, and the total amount of ammonium fluoride (b) and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia is not less than 9.5 mol/kg.
摘要翻译：蚀刻溶液，其制造方法和使用该蚀刻液的蚀刻工艺，其中蚀刻溶液包括形成在氟化氢和碱之间的氢氟酸（a），氟化铵（b）和盐（c）沸点高于氨; 氟化铵（b）的浓度不高于8.2mol / kg，氟化氢和沸点高于氨的碱之间形成的氟化铵（b）和盐（c）的总量不是小于9.5mol / kg。

6. 发明授权

US09163992B2 Abnormal measurement detection device and method for infrared radiation thermometer 有权
标题翻译：红外辐射温度计异常测量检测装置及方法
公开(公告)号：US09163992B2
公开(公告)日：2015-10-20
申请号：US13567866
申请日：2012-08-06
申请人： Yuichi Furukawa , Shingo Nakamura , Yuji Okada , Fumio Kawahara
发明人： Yuichi Furukawa , Shingo Nakamura , Yuji Okada , Fumio Kawahara
IPC分类号： G01J5/00 , G01J5/12 , G01J5/08 , G01J5/02 , G01J5/04 , G01J5/52
CPC分类号： G01J5/0003 , G01J5/004 , G01J5/0044 , G01J5/02 , G01J5/026 , G01J5/04 , G01J5/043 , G01J5/08 , G01J5/0803 , G01J5/0846 , G01J5/0859 , G01J5/12 , G01J5/522 , G01J2005/0077 , G01J2005/0081
摘要： A technique for an infrared radiation thermometer used for thermography that detects measurement abnormality of an infrared radiation thermometer and estimates the causes of the measurement abnormality such as contamination of an objective lens and a malfunction in a mechanism section of the infrared radiation thermometer.
摘要翻译：用于红外辐射温度计的红外线辐射温度计的技术，其用于检测红外线辐射温度计的测量异常，并且估计红外辐射温度计的机构部分中的物镜的污染和误差等测量异常的原因。

7. 发明申请

US20100098321A1 TEMPERATURE MEASURING DEVICE AND TEMPERATURE MEASURING METHOD 有权
标题翻译：温度测量装置和温度测量方法
公开(公告)号：US20100098321A1
公开(公告)日：2010-04-22
申请号：US12593811
申请日：2008-03-25
申请人： Yuichi Furukawa , Shingo Nakamura , Yuji Okada , Fumio Kawahara
发明人： Yuichi Furukawa , Shingo Nakamura , Yuji Okada , Fumio Kawahara
IPC分类号： G06K9/00
CPC分类号： G01J5/0003 , G01J1/0455 , G01J2005/0077 , G01J2005/0081
摘要： Feature points (41, 42, 43) in the heat image (10) of a casting die (1) are extracted and a predetermined geometrical conversion processing is performed on the heat image (10) such that the feature points are superimposed on the reference feature points (61, 62, 63) set in a reference heat image (30) picked up previously to generate a corrected heat image (20). A difference image (40) is generated by superimposing the corrected heat image (20) and the reference heat image (30) such that the corrected feature points (51, 52, 53) in the corrected heat image (20) is superimposed on the corresponding reference feature points (61, 62, 63). With such an arrangement, a highly reliable difference image can be generated even when the imaging field of vision slips off among a plurality of heat images.
摘要翻译：提取铸造模具（1）的加热图像（10）中的特征点（41,42,43），并对加热图像（10）进行预定的几何转换处理，使得特征点叠加在参考特征点（61,62,63）设置在先前拾取的参考加热图像（30）中以产生校正热图像（20）。通过将校正热图像（20）和参考加热图像（30）叠加在校正热图像（20）中的校正特征点（51,52,53）叠加在相应的参考特征点（61,62,63）。通过这样的布置，即使当多个热图像中的成像视场滑落时，也可以产生高度可靠的差分图像。

8. 发明申请

US20100063745A1 METHOD OF ESTIMATING SECONDARY STRUCTURE IN RNA AND PROGRAM AND APPARATUS THEREFOR 审中-公开
标题翻译：估计RNA及其程序中的二级结构的方法及其设备
公开(公告)号：US20100063745A1
公开(公告)日：2010-03-11
申请号：US12518854
申请日：2007-12-13
申请人： Shingo Nakamura
发明人： Shingo Nakamura
IPC分类号： G06F19/00 , G06F17/18
CPC分类号： G06Q50/22 , G16B15/00 , G16B45/00
摘要： Assuming frame F having specific short length L2 on a transcript, a structure in a small-section is sequentially analyzed while shifting the frame F finely in a step-like manner by constant value t, and first probability for a specific secondary structure in a specific position in each small-section is determined. Then, at least one specific position proved in each small-section is arranged in corresponding position on the original transcript, and the magnitude of degree of overlapping between the specific positions is determined as second probability. By focusing on these two probabilities, it is possible to predict whether an intended secondary structure is actually present in RNA such as mRNA with higher reliability.
摘要翻译：假定帧F在转录本上具有特定的短长度L2，则以阶梯状方式将帧F精细地移动恒定值t，依次分析小部分中的结构，并且将特定二级结构的特定的第一概率确定每个小节中的位置。然后，在每个小部分中证明的至少一个具体位置被布置在原始誊本上的对应位置，并且确定特定位置之间的重叠程度的大小作为第二概率。通过关注这两个概率，可以预测目标二级结构实际上是否存在于RNA中，如具有较高可靠性的mRNA。

9. 发明申请

US20090019042A1 Method Of Screening Compound Regulating The Translation Of Specific mRNA 审中-公开
标题翻译：筛选化合物调节特异性mRNA翻译的方法
公开(公告)号：US20090019042A1
公开(公告)日：2009-01-15
申请号：US11791161
申请日：2005-11-18
申请人： Shingo Nakamura , Hiroyuki Ueno
发明人： Shingo Nakamura , Hiroyuki Ueno
IPC分类号： G06F7/20 , G06F17/30
CPC分类号： C12N15/111 , C12N15/113 , C12N15/67 , C12N2310/11 , C12N2320/11 , G16B15/00 , G16B20/00 , G16B30/00 , G16B35/00 , G16C20/60
摘要： The present invention provides a screening method for a compound capable of preventing/treating a particular disease, which comprises (1) a step for selecting one or more mRNAs whose regulation of translation can result in the prevention/treatment of the disease, (2) a step for searching for mRNA(s) having a sequence, in the molecule, capable of assuming a local secondary structure capable of regulating the translation of the mRNA(s) from among the mRNAs selected in (1) above, (3) a step for selecting a particular sequence from among sequences capable of assuming a local secondary structure in the particular mRNA extracted in (2) above, (4) a step for confirming that a partial structure capable of interacting with the compound in the particular sequence selected in (3) above is not present in the region involved in the regulation of the translation of other mRNA, or even if present, is incapable of regulating the translation, and (5) a step for bringing an RNA strand comprising a particular sequence confirmed to be not present in the region involved in the regulation of the translation of other mRNA in (4) above and a test compound into contact with each other, and measuring changes in the stability of the secondary structure of the RNA strand.
摘要翻译：本发明提供了能够预防/治疗特定疾病的化合物的筛选方法，其包括（1）选择一种或多种mRNA的步骤，所述mRNA的调节可导致疾病的预防/治疗，（2）在分子中搜索具有能够在上述（1）中选择的mRNA中能够调节mRNA的翻译的局部二级结构的分子中具有序列的mRNA的步骤，（3）a 从在上述（2）中提取的特定mRNA中能够呈现局部二级结构的序列中选择特定序列的步骤，（4）确认能够与特定序列中化合物相互作用的部分结构的步骤（3）不存在于涉及其他mRNA的翻译调节的区域中，或者即使存在也不能调节翻译，以及（5）使包含一个或多个mRNA的RNA链的步骤确认在涉及上述（4）中其他mRNA的翻译调节区域和测试化合物相互接触并测定RNA链二级结构稳定性变化的区域中不存在细目序列。

10. 发明授权

US6104534A Antireflection coating with electromagnetic wave shielding effect and optical member having the antireflection coating 失效
标题翻译：具有电磁波屏蔽效果的防反射涂层和具有抗反射涂层的光学部件
公开(公告)号：US6104534A
公开(公告)日：2000-08-15
申请号：US44802
申请日：1998-03-20
申请人： Tatsuo Ohta , Shingo Nakamura , Satoshi Nakano
发明人： Tatsuo Ohta , Shingo Nakamura , Satoshi Nakano
IPC分类号： B32B15/08 , G02B1/10 , G02B1/11 , G02B1/116 , G02B1/14 , G09F9/00 , H04N5/72 , H05K9/00 , G02B5/28
CPC分类号： G02B1/116
摘要： In an optical member having a coating for reducing a ray reflecting on the coating and for reducing an electromagnetic wave incident on the coating, the optical member includes: a transparent substrate; and the coating including, and formed on the transparent substrate in the order named from the transparent substrate, a first light transmitting thin layer having a high refractive index, a first light transmitting thin layer having a low refractive index, a second light transmitting thin layer having a high refractive index, a second light transmitting thin layer having a low refractive index. At least one of the first light transmitting thin layer having the high refractive index and the second light transmitting thin layer having the high refractive index is a transparent conductive layer having a sheet resistivity of 100 .OMEGA./.quadrature. or less.
摘要翻译：在具有用于减少在涂层上反射的光线并用于减少入射在涂层上的电磁波的涂层的光学部件中，所述光学部件包括：透明基板; 以及从所述透明基板起依次形成在所述透明基板上的所述涂层具有高折射率的第一透光薄膜，具有低折射率的第一透光薄膜，第二透光薄层具有高折射率，具有低折射率的第二透光薄层。具有高折射率的第一透光薄层和具有高折射率的第二透光薄层中的至少一个是具有100欧姆/平方厘米的薄膜电阻率的透明导电层。

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