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1. 发明申请

US20110193136A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110193136A1
公开(公告)日：2011-08-11
申请号：US13024004
申请日：2011-02-09
申请人： Masashige MORITOKI , Takamasa ITOU , Takashi OGURA , Tsutomu HIMUKAI , Shigeaki SHIMIZU
发明人： Masashige MORITOKI , Takamasa ITOU , Takashi OGURA , Tsutomu HIMUKAI , Shigeaki SHIMIZU
IPC分类号： H01L23/522
CPC分类号： H01L21/76895 , H01L27/10811 , H01L27/10814 , H01L27/10885 , H01L27/10894
摘要： To provide a structure of a semiconductor device that realizes an increase in a capacitor capacitance of a memory circuit to the maximum while inhibiting an increase in a contact resistance of a logic circuit, and a manufacture method thereof. When designating the number of layers of the local interconnect layers having wiring that makes up a logic circuit area as M and designating the number of layers of the local interconnect layers having wiring that makes up the memory circuit as N (M and N are natural numbers and satisfy M>N), capacitance elements are provided over the interconnect layers comprised of (M−N) layers or (M−N+1) layers.
摘要翻译：为了提供一种在抑制逻辑电路的接触电阻的增加的同时最大限度地实现存储电路的电容器电容的增加的半导体器件的结构及其制造方法。当将具有构成逻辑电路区域的布线的局部互连层的层数指定为M并且指定具有构成存储器电路的布线的局部互连层的层数为N（M和N为自然数并且满足M> N），在由（M-N）层或（M-N + 1）层组成的互连层上提供电容元件。

2. 发明申请

US20100167493A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100167493A1
公开(公告)日：2010-07-01
申请号：US12548471
申请日：2009-08-27
申请人： Keiji SAKAMOTO , Takashi OGURA , Masashige MORITOKI
发明人： Keiji SAKAMOTO , Takashi OGURA , Masashige MORITOKI
IPC分类号： H01L21/762
CPC分类号： H01L21/76232
摘要： A method of manufacturing a semiconductor device includes a process of forming a STI trench in a substrate, a process of forming a thermal oxide film on a sidewall and a bottom surface of the STI trench, a process of performing a plasma treatment on a surface of the thermal oxide film that is located at a bottom portion of the STI trench, and a process of forming an insulating film in the STI trench using a CVD method
摘要翻译：制造半导体器件的方法包括在衬底中形成STI沟槽的工艺，在STI沟槽的侧壁和底表面上形成热氧化膜的工艺，在表面上进行等离子体处理的工艺位于STI沟槽的底部的热氧化膜，以及使用CVD法在STI沟槽中形成绝缘膜的工序

3. 发明申请

US20110310644A1 Power Conversion Device 有权
标题翻译：电源转换装置
公开(公告)号：US20110310644A1
公开(公告)日：2011-12-22
申请号：US13160724
申请日：2011-06-15
申请人： Takashi OGURA , Satoru Shigeta , Hiroaki Igarashi , Koichi Ono , Yasuo Noto
发明人： Takashi OGURA , Satoru Shigeta , Hiroaki Igarashi , Koichi Ono , Yasuo Noto
IPC分类号： H02H7/122
CPC分类号： H02M7/5387 , H02M1/32
摘要： A power conversion device includes: an inverter that converts a DC current supplied from a DC power source to an AC current by engaging a plurality of switching elements, which constitute an upper arm, and a plurality of switching elements, which constitute a lower arm, in switching operation; a control unit that includes a signal generation unit that generates a switching signal carrying a command for execution of the switching operation in correspondence to each of the plurality of switching elements constituting the upper arm and the plurality of switching elements constituting the lower arm, and outputs the switching signal thus generated as a control signal; and a drive unit that individually drives each of the switching elements based upon the corresponding control signals. The control unit includes a plurality of protection circuits disposed in series on a control signal line extending between the signal generation unit and the drive unit, with each of the protection circuits outputting a control signal having been input thereto when a protective operation is not executed but outputting a control signal for setting the corresponding switching element either in a cut-off state or in an electrically continuous state in place of the control signal input thereto when the protective operation is executed.
摘要翻译：电力转换装置包括：逆变器，其通过接合构成上臂的多个开关元件和构成下臂的多个开关元件来将从直流电源提供的直流电流转换为交流电流，切换操作; 控制单元，其包括信号生成单元，该信号生成单元生成与构成上臂的多个开关元件和构成下臂的多个开关元件中的每一个对应地执行切换操作的指令的切换信号，并且输出由此产生作为控制信号的切换信号; 以及驱动单元，其基于相应的控制信号独立地驱动每个开关元件。控制单元包括多个保护电路，串联布置在信号发生单元和驱动单元之间延伸的控制信号线上，当不执行保护操作时，每个保护电路输出已输入的控制信号，当执行保护操作时，输出用于将相应的开关元件设置在截止状态或电连续状态中的控制信号，以代替输入到其的控制信号。

4. 发明申请

US20120123274A1 ULTRASONIC TRANSDUCER AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：超声波传感器及其制造方法
公开(公告)号：US20120123274A1
公开(公告)日：2012-05-17
申请号：US13358652
申请日：2012-01-26
申请人： Masako IKEDA , Takashi OGURA
发明人： Masako IKEDA , Takashi OGURA
IPC分类号： A61B8/14 , B05D5/00
CPC分类号： B06B1/0622 , G10K11/002
摘要： An ultrasonic transducer which can attenuate ultrasonic waves emitted toward the rear without increasing a thickness of a backing layer includes: a piezoelectric transducer which emits and receives ultrasonic waves; and the backing layer which is provided in contact with the rear of the piezoelectric transducer and which attenuates the ultrasonic waves emitted in a rear direction from the piezoelectric transducer. The backing layer includes a plurality of acoustic tubes formed in the rear direction from a plane of the backing layer that is in contact with the piezoelectric transducer. Each of the acoustic tubes has a different length based on a principle of superposition of acoustic waves. The acoustic tubes include an acoustic tube which has (i) a portion of the length formed in a direction perpendicular to the rear direction and (ii) the remaining portion of the length formed in a direction parallel to the rear direction.
摘要翻译：能够衰减向后发射的超声波而不增加背层的厚度的超声波换能器包括：发射和接收超声波的压电换能器; 以及背衬层，其设置成与压电换能器的后部接触并且衰减从压电换能器沿后方发射的超声波。背衬层包括从与压电换能器接触的背衬层的平面沿后方形成的多个声管。基于声波叠加的原理，每个声管具有不同的长度。声管包括声管，该声管具有（i）沿垂直于后方向的方向形成的长度的一部分，以及（ii）在与后方平行的方向上形成的长度的剩余部分。

5. 发明申请

US20100078709A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100078709A1
公开(公告)日：2010-04-01
申请号：US12568441
申请日：2009-09-28
申请人： Takashi OGURA
发明人： Takashi OGURA
IPC分类号： H01L27/06 , H01L29/78 , H01L23/60
CPC分类号： H01L27/0248 , H01L29/0692 , H01L29/7322 , H01L29/7816 , H01L2924/0002 , H01L2924/00
摘要： In a conventional semiconductor device, protection of a to-be-protected element from a surge voltage is difficult because the to-be-protected element is turned on before a protection element due to variations in manufacturing conditions. In a semiconductor device of the present invention, a protection element and a MOS transistor have part of their structures formed under common conditions. N type diffusion layers of the protection element and the MOS transistor are formed in the same process, while the N type diffusion layer of the protection element has a larger diffusion width than the N type diffusion layer of the MOS transistor. With this structure, when a surge voltage is applied to an output terminal, the protection element is turned on before the MOS transistor, and thereby the MOS transistor is protected from an avalanche current.
摘要翻译：在传统的半导体器件中，保护元件免受浪涌电压的保护是困难的，因为由于制造条件的变化，保护元件在保护元件之前被接通。在本发明的半导体器件中，保护元件和MOS晶体管具有在一般条件下形成的部分结构。保护元件和MOS晶体管的N型扩散层以相同的工艺形成，而保护元件的N型扩散层的扩散宽度大于MOS晶体管的N型扩散层。利用这种结构，当浪涌电压施加到输出端子时，在MOS晶体管之前保护元件导通，从而保护MOS晶体管免受雪崩电流的影响。

6. 发明申请

US20110017579A1 SLIDE SWITCH 失效
标题翻译：滑动开关
公开(公告)号：US20110017579A1
公开(公告)日：2011-01-27
申请号：US12840735
申请日：2010-07-21
申请人： Takashi OGURA
发明人： Takashi OGURA
IPC分类号： H01H15/10
CPC分类号： H01H15/04 , H01H19/635 , H01H21/36
摘要： Disclosed is a slide switch comprising: an operating member which moves circular arcuately in a predetermined movement stroke relative to a main surface of a printed wiring board for outputting a plurality of electrical signals and selects between the electric signals; a converting mechanism for converting a circular arcuate movement of the operating member into a rectilinear movement relative to the main surface of the printed wiring board; and a moving member rectilinearly moved relative to the main surface of the printed wiring board by the converting mechanism and determining, in cooperation with the printed wiring board, an electrified state corresponding to an electric signal selected by the operating member.
摘要翻译：公开了一种滑动开关，包括：操作构件，其相对于印刷线路板的主表面以预定的移动行程弧形地移动，用于输出多个电信号并在电信号之间进行选择; 转换机构，用于将操作构件的圆弧运动转换成相对于印刷电路板的主表面的直线运动; 以及通过转换机构相对于印刷电路板的主表面直线移动的移动部件，并且与印刷电路板协作确定与由操作部件选择的电信号对应的通电状态。

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