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1. 发明授权

US09892187B2 Data analysis method, data analysis device, and storage medium storing processing program for same 有权
公开(公告)号：US09892187B2
公开(公告)日：2018-02-13
申请号：US14402838
申请日：2012-09-14
申请人： Masashi Tsuchida , Takashi Kotera , Shohei Matsuura , Yukio Nakano
发明人： Masashi Tsuchida , Takashi Kotera , Shohei Matsuura , Yukio Nakano
IPC分类号： G06F17/30
CPC分类号： G06F17/30592
摘要： A data analysis method for analyzing data on a data analysis apparatus having: setting, a plurality of dimension tables each having a first identifier for identifying data to be analyzed and attributes corresponding to the first identifier; setting, a history table having a second identifier associated with each of the first identifiers of the dimension tables, and having attributes corresponding to the second identifier; setting, a relation table for storing attributes relating to the first identifier, the dimension tables having a first dimension table associated with the relation table through the attribute relating to the first identifier; associating, the first identifiers that refers to the first identifier of a first dimension table with the attributes; and processing, a query for the relation table and the first dimension table, and generating a second dimension table.

2. 发明申请

US20150100543A1 DATA ANALYSIS METHOD, DATA ANALYSIS DEVICE, AND STORAGE MEDIUM STORING PROCESSING PROGRAM FOR SAME 有权
标题翻译：数据分析方法，数据分析设备和存储中间存储处理程序
公开(公告)号：US20150100543A1
公开(公告)日：2015-04-09
申请号：US14402838
申请日：2012-09-14
申请人： Masashi Tsuchida , Takashi Kotera , Shohei Matsuura , Yukio Nakano
发明人： Masashi Tsuchida , Takashi Kotera , Shohei Matsuura , Yukio Nakano
IPC分类号： G06F17/30
CPC分类号： G06F17/30592
摘要： A data analysis method for analyzing data on a data analysis apparatus having: setting, a plurality of dimension tables each having a first identifier for identifying data to be analyzed and attributes corresponding to the first identifier; setting, a history table having a second identifier associated with each of the first identifiers of the dimension tables, and having attributes corresponding to the second identifier; setting, a relation table for storing attributes relating to the first identifier, the dimension tables having a first dimension table associated with the relation table through the attribute relating to the first identifier; associating, the first identifiers that refers to the first identifier of a first dimension table with the attributes; and processing, a query for the relation table and the first dimension table, and generating a second dimension table.
摘要翻译：一种数据分析方法，用于分析数据分析装置的数据，该数据分析装置具有：设置多个维度表，每个维度表具有用于识别待分析数据的第一标识符和与该第一标识符相对应的属性; 设置具有与维度表的每个第一标识符相关联的第二标识符并且具有对应于第二标识符的属性的历史表; 设置用于存储与第一标识符相关的属性的关系表，维度表具有通过与第一标识符有关的属性与关系表相关联的第一维度表; 关联具有属性的第一维度表的第一标识符的第一标识符; 以及处理，关系表和第一维度表的查询，以及生成第二维度表。

3. 发明申请

US20070007128A1 Silicon film forming apparatus 审中-公开
标题翻译：硅膜形成装置
公开(公告)号：US20070007128A1
公开(公告)日：2007-01-11
申请号：US11519132
申请日：2006-09-12
申请人： Atsushi Tomyo , Eiji Takahashi , Masaki Fujiwara , Takashi Kotera , Masatoshi Onoda
发明人： Atsushi Tomyo , Eiji Takahashi , Masaki Fujiwara , Takashi Kotera , Masatoshi Onoda
IPC分类号： C23C14/00 , C23C16/00
CPC分类号： H01J37/321 , C23C14/165 , C23C14/3471
摘要： A silicon film forming apparatus includes a deposition chamber (10), a silicon sputter target (2) arranged in the chamber, a hydrogen gas supply circuit (102 or 102′) supplying a hydrogen gas into the chamber, and a high-frequency power applying device (antenna 1, 1′, power source PW and others) generating inductively coupled plasma by applying high-frequency power to the gas supplied into the deposition chamber (10). Chemical sputtering is effected on the target (2) by the plasma to form a silicon film on a substrate S. A silane gas may be used. A silane gas supply circuit (101) may be provided with a gas reservoir unit (GR). The silicon film can be formed inexpensively and fast at a relatively low temperature.
摘要翻译：硅膜形成装置包括沉积室（10），布置在室中的硅溅射靶（2），将氢气供应到室中的氢气供应电路（102或102'）和高频功率通过向供应到沉积室（10）的气体施加高频电力来产生电感耦合等离子体的施加装置（天线1,1'，电源PW等）。通过等离子体在靶（2）上进行化学溅射，以在衬底S上形成硅膜。可以使用硅烷气体。硅烷气体供给回路（101）也可以设置有气体储存部（GR）。硅膜可以在相对较低的温度下廉价且快速地形成。

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