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1. 发明授权

US09142516B2 Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09142516B2
公开(公告)日：2015-09-22
申请号：US13525719
申请日：2012-06-18
申请人： Masashi Takenaka , Katsuyoshi Yamamoto
发明人： Masashi Takenaka , Katsuyoshi Yamamoto
IPC分类号： H01L23/498 , H01L23/00 , H01L23/48 , H01L21/48 , H01L25/065
CPC分类号： H01L24/03 , H01L21/4853 , H01L23/481 , H01L23/49811 , H01L23/49827 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L2224/02372 , H01L2224/03 , H01L2224/034 , H01L2224/03614 , H01L2224/0401 , H01L2224/05009 , H01L2224/05082 , H01L2224/05083 , H01L2224/05155 , H01L2224/05171 , H01L2224/05562 , H01L2224/05564 , H01L2224/05624 , H01L2224/11 , H01L2224/11416 , H01L2224/1145 , H01L2224/1146 , H01L2224/11462 , H01L2224/116 , H01L2224/1161 , H01L2224/11616 , H01L2224/1182 , H01L2224/11849 , H01L2224/119 , H01L2224/11901 , H01L2224/13012 , H01L2224/13013 , H01L2224/13014 , H01L2224/13022 , H01L2224/13024 , H01L2224/13025 , H01L2224/13076 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/13186 , H01L2224/1319 , H01L2224/13566 , H01L2224/13624 , H01L2224/1411 , H01L2224/14133 , H01L2224/16145 , H01L2224/16146 , H01L2224/16235 , H01L2224/16237 , H01L2224/16238 , H01L2224/17107 , H01L2224/17133 , H01L2224/17177 , H01L2224/17181 , H01L2224/81141 , H01L2224/81193 , H01L2224/81194 , H01L2224/81801 , H01L2224/92 , H01L2224/9211 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2225/06593 , H01L2924/00014 , H01L2924/07811 , H01L2924/01047 , H01L2224/114 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor device includes a plurality of protrusions formed on a first face of the semiconductor device; first bonding portions formed on upper portions of the plurality of protrusions; second bonding portions formed on side faces of the plurality of protrusions; and third bonding portions formed on the first face between the plurality of protrusions, wherein the semiconductor device is configured to bond to an other semiconductor device through the third from the first bonding portions.
摘要翻译：半导体器件包括形成在半导体器件的第一面上的多个突起; 形成在所述多个突起的上部的第一接合部; 形成在所述多个突起的侧面上的第二接合部; 以及形成在所述多个突起之间的所述第一面上的第三接合部，其中所述半导体器件被配置为从所述第一接合部分通过第三接合到另一个半导体器件。

2. 发明申请

US20130026649A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 有权
公开(公告)号：US20130026649A1
公开(公告)日：2013-01-31
申请号：US13525719
申请日：2012-06-18
申请人： Masashi Takenaka , Katsuyoshi Yamamoto
发明人： Masashi Takenaka , Katsuyoshi Yamamoto
IPC分类号： H01L23/48 , H01L21/768 , H01L21/28
CPC分类号： H01L24/03 , H01L21/4853 , H01L23/481 , H01L23/49811 , H01L23/49827 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L2224/02372 , H01L2224/03 , H01L2224/034 , H01L2224/03614 , H01L2224/0401 , H01L2224/05009 , H01L2224/05082 , H01L2224/05083 , H01L2224/05155 , H01L2224/05171 , H01L2224/05562 , H01L2224/05564 , H01L2224/05624 , H01L2224/11 , H01L2224/11416 , H01L2224/1145 , H01L2224/1146 , H01L2224/11462 , H01L2224/116 , H01L2224/1161 , H01L2224/11616 , H01L2224/1182 , H01L2224/11849 , H01L2224/119 , H01L2224/11901 , H01L2224/13012 , H01L2224/13013 , H01L2224/13014 , H01L2224/13022 , H01L2224/13024 , H01L2224/13025 , H01L2224/13076 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13147 , H01L2224/13186 , H01L2224/1319 , H01L2224/13566 , H01L2224/13624 , H01L2224/1411 , H01L2224/14133 , H01L2224/16145 , H01L2224/16146 , H01L2224/16235 , H01L2224/16237 , H01L2224/16238 , H01L2224/17107 , H01L2224/17133 , H01L2224/17177 , H01L2224/17181 , H01L2224/81141 , H01L2224/81193 , H01L2224/81194 , H01L2224/81801 , H01L2224/92 , H01L2224/9211 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2225/06593 , H01L2924/00014 , H01L2924/07811 , H01L2924/01047 , H01L2224/114 , H01L2924/00012 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor device includes a plurality of protrusions formed on a first face of the semiconductor device; first bonding portions formed on upper portions of the plurality of protrusions; second bonding portions formed on side faces of the plurality of protrusions; and third bonding portions formed on the first face between the plurality of protrusions, wherein the semiconductor device is configured to bond to an other semiconductor device through the third from the first bonding portions.

3. 发明授权

US08140552B2 Method and apparatus for optimizing lead time for service provisioning 失效
标题翻译：用于优化服务提供的提前期的方法和装置
公开(公告)号：US08140552B2
公开(公告)日：2012-03-20
申请号：US12233921
申请日：2008-09-19
申请人： Masatoshi Tagami , Yoshinori Tanaka , Katsuyoshi Yamamoto
发明人： Masatoshi Tagami , Yoshinori Tanaka , Katsuyoshi Yamamoto
IPC分类号： G06F17/30
CPC分类号： G06F17/30312
摘要： A method for optimizing lead time for service provisioning for a request from a customer includes storing a record of installation and configuration times for each hardware and software configuration in a database, and then calculating success rates and failure rates for each hardware and software configuration. A manual installation time for the request is set in the event of failure. The necessary time to prepare the system fulfilling the customer request is then determined and displayed in the data center.
摘要翻译：用于优化来自客户的请求的服务提供的交货时间的方法包括将每个硬件和软件配置的安装记录和配置时间记录存储在数据库中，然后计算每个硬件和软件配置的成功率和故障率。发生故障时设置请求的手动安装时间。然后确定准备满足客户请求的系统所需的时间并显示在数据中心中。

4. 发明授权

US07964902B2 Imaging device 有权
标题翻译：成像设备
公开(公告)号：US07964902B2
公开(公告)日：2011-06-21
申请号：US11861691
申请日：2007-09-26
申请人： Tadao Inoue , Katsuyoshi Yamamoto , Hiroshi Kobayashi
发明人： Tadao Inoue , Katsuyoshi Yamamoto , Hiroshi Kobayashi
IPC分类号： H01L31/062
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14645 , H01L31/03529 , H04N5/361 , Y02E10/50
摘要： First diffusion region constituting a photodiode in each pixel stores carriers generated according to incident light. Second diffusion region is formed at a surface of the first diffusion region to cover a peripheral part of the first diffusion region. In the peripheral part of the first diffusion region, crystal defects tend to occur by a process of forming an isolation region and a gate electrode, so that dark current noise tends to occur. The second diffusion region functioning as a protection layer prevents crystal defects in a manufacturing process. The second diffusion region isn't formed on a center of the surface of the first diffusion region where crystal defects don't tend to occur. In the first diffusion region where the second diffusion region isn't formed, the thickness of a depletion layer increases, which improves light detection sensitivity. This improves detection sensitivity of the photodiode without increasing the dark current noise.
摘要翻译：在每个像素中构成光电二极管的第一扩散区域存储根据入射光生成的载流子。第二扩散区域形成在第一扩散区域的表面以覆盖第一扩散区域的周边部分。在第一扩散区域的外围部分中，通过形成隔离区域和栅极电极的过程倾向于发生晶体缺陷，从而趋于产生暗电流噪声。用作保护层的第二扩散区防止制造过程中的晶体缺陷。第二扩散区域不形成在不易发生结晶缺陷的第一扩散区域的表面的中心。在没有形成第二扩散区域的第一扩散区域中，耗尽层的厚度增加，这提高了光检测灵敏度。这可以提高光电二极管的检测灵敏度，而不会增加暗电流噪声。

5. 发明申请

US20100188542A1 IMAGING DEVICE AND IMAGE SENSOR CHIP 审中-公开
标题翻译：成像装置和图像传感器芯片
公开(公告)号：US20100188542A1
公开(公告)日：2010-07-29
申请号：US12692037
申请日：2010-01-22
申请人： Toshitaka MIZUGUCHI , Katsuyoshi Yamamoto
发明人： Toshitaka MIZUGUCHI , Katsuyoshi Yamamoto
IPC分类号： H04N5/335
CPC分类号： H04N9/045 , H04N5/378
摘要： An imaging device includes a pixel array that includes a plurality of pixels, a data read circuit that sequentially reads the data of a given line from the pixel array, a plurality of column analog-digital converters that perform analog-digital conversion on the data from the data read circuit, and a control signal generating circuit that generates a control signal to control the analog-digital conversion.
摘要翻译：一种成像装置包括：包括多个像素的像素阵列，从像素阵列顺序读取给定行的数据的数据读取电路;多个列模拟数字转换器，对来自数据读取电路以及产生用于控制模数转换的控制信号的控制信号发生电路。

6. 发明授权

US07522199B2 Imaging device with light-shielding region, control method thereof and CMOS image sensor with light-shielding region 失效
标题翻译：具有遮光区域的成像装置，其控制方法和具有遮光区域的CMOS图像传感器
公开(公告)号：US07522199B2
公开(公告)日：2009-04-21
申请号：US10995394
申请日：2004-11-24
申请人： Jun Funakoshi , Katsuyoshi Yamamoto , Asao Kokubo , Toshitaka Mizuguchi , Tsuyoshi Higuchi
发明人： Jun Funakoshi , Katsuyoshi Yamamoto , Asao Kokubo , Toshitaka Mizuguchi , Tsuyoshi Higuchi
IPC分类号： H04N9/64
CPC分类号： H04N5/3658 , H04N5/378
摘要： An imaging device provided with a read circuit in which a light-shielding region is formed in a part of an image region where a plurality of optical/electrical conversion devices is two-dimensionally arrayed in the row and column directions and which converts a optically detected signal outputted from each of the optical/electrical conversion devices for each of the column into a digital signal, comprises a storage device for storing the outputted digital signal outputted in relation with the optical/electrical conversion device in the light-shielding region and a difference calculation device for calculating a difference between the outputted digital signal in relation with the optical/electrical conversion device in a light-receiving region except the light-shielding region and a value stored in the storage device.
摘要翻译：一种具有读取电路的成像装置，其中在多个光/电转换装置在行和列方向上二维排列的图像区域的一部分中形成有遮光区域，并且将光学检测从每个列的每个光/电转换装置输出的信号为数字信号，包括存储装置，用于存储在光屏蔽区域中输出的与光/电转换装置相关的数字信号，计算装置，用于计算除光屏蔽区域之外的光接收区域中与光/电转换装置相关的输出数字信号之间的差和存储在存储装置中的值。

7. 发明授权

US08966051B2 Technique for monitoring component processing 有权
标题翻译：监控元件加工技术
公开(公告)号：US08966051B2
公开(公告)日：2015-02-24
申请号：US10768905
申请日：2004-01-30
申请人： Kohsuke Okamoto , Katsuyoshi Yamamoto , Hiroyuki Ogura
发明人： Kohsuke Okamoto , Katsuyoshi Yamamoto , Hiroyuki Ogura
IPC分类号： G06F15/173 , G06F11/34 , H04L12/26
CPC分类号： H04L43/0894 , G06F11/348 , G06F11/3495 , H04L43/00
摘要： The present invention provides a technique for measuring the efficiency of components in a computer. An echo server is provided which comprises several units. A socket generation unit generates a receiving server socket on the basis of information on a correspondence between a plurality of components in a computer. And generates a client socket that is a dedicated socket inheriting information of the receiving server socket when data is transmitted. A stream acquisition unit acquires a transmission path for acquiring data transmitted and received between components. A thread generation unit generates a transmission path by coupling streams. A transfer execution unit transfers data acquired via a thread to an original destination component. Using these units, the technique monitors and running verifies behavior by observing data running on the network.
摘要翻译：本发明提供了一种用于测量计算机中部件的效率的技术。提供了包括多个单元的回波服务器。插座生成单元根据关于计算机中的多个部件之间的对应关系的信息生成接收服务器插座。并生成一个客户端套接字，它是一个专用的套接字，当传输数据时继承接收服务器套接字的信息。流获取单元获取用于获取在组件之间发送和接收的数据的传输路径。线程生成单元通过耦合流生成传输路径。传送执行单元将经由线程获取的数据传送到原始目的地部件。使用这些单元，技术监视和运行通过观察网络上运行的数据来验证行为。

8. 发明授权

US08477384B2 Solid-state image pickup device and image pickup method 有权
标题翻译：固态图像拾取装置和图像拾取方法
公开(公告)号：US08477384B2
公开(公告)日：2013-07-02
申请号：US12211613
申请日：2008-09-16
申请人： Toshitaka Mizuguchi , Katsuyoshi Yamamoto , Jun Funakoshi , Tsuyoshi Higuchi
发明人： Toshitaka Mizuguchi , Katsuyoshi Yamamoto , Jun Funakoshi , Tsuyoshi Higuchi
IPC分类号： H04N1/40
CPC分类号： H01L27/14623 , H01L27/14603 , H04N5/361 , H04N5/378
摘要： A solid-state image pickup device and image pickup method eliminate a dark-current component by adjusting the black level appropriately even if the dark-current component varies among horizontal lines. A pixel array includes light-receiving pixel elements and light-blocking pixel elements disposed such that horizontal lines include the light-blocking pixel elements individually. A readout circuit block reads pixel signals of each of the horizontal lines from the pixel array, inputs the pixel signals to ADC circuits (column ADC circuit block), and outputs the pixel signals of the light-blocking pixel elements. A ramp signal generation circuit obtains the pixel signals of the light-blocking pixel elements output from the readout circuit block, generates a ramp signal by using a reference level of AD conversion adjusted for each of the horizontal lines in accordance with the obtained pixel signals of the light-blocking pixel elements, and inputs the ramp signal to the ADC circuits.
摘要翻译：固态图像拾取装置和图像拾取方法即使在暗电流分量在水平线之间变化时也可以适当地调整黑电平来消除暗电流分量。像素阵列包括光接收像素元件和被设置为使得水平线分别包括遮光像素元件的遮光像素元件。读出电路块从像素阵列读取每条水平线的像素信号，将像素信号输入到ADC电路（列ADC电路块），并输出遮光像素元件的像素信号。斜坡信号发生电路获取从读出电路块输出的遮光像素元件的像素信号，根据所获得的像素信号，通过使用针对每个水平线调整的AD转换的参考电平来生成斜坡信号遮光像素元件，并将斜坡信号输入到ADC电路。

9. 发明授权

US07593047B2 CMOS image sensor for suppressing degradation of spatial resolution and generating compressed image signals 失效
公开(公告)号：US07593047B2
公开(公告)日：2009-09-22
申请号：US09962236
申请日：2001-09-26
申请人： Jun Funakoshi , Katsuyoshi Yamamoto
发明人： Jun Funakoshi , Katsuyoshi Yamamoto
IPC分类号： H04N9/04 , H04N5/335 , H04N9/083 , H04N3/14
CPC分类号： H04N5/335 , H04N5/347 , H04N9/045
摘要： The present invention is an image sensor having a pixel array, which arranges pixels having photoelectric conversion circuits in rows and columns; and a pixel selecting circuit for selecting each pixel, wherein the pixel selecting circuit selects pixels of all rows and/or pixels of all columns, and selects a pixel signal at every plural pixels among the selected pixel signals, and pixels selected from a pixel block of a plurality of rows and columns within the pixel array are dispersed within this pixel block.

10. 发明授权

US07477299B2 Imaging device 失效
标题翻译：成像设备
公开(公告)号：US07477299B2
公开(公告)日：2009-01-13
申请号：US11133386
申请日：2005-05-20
申请人： Tsuyoshi Higuchi , Jun Funakoshi , Seiji Yamagata , Toshitaka Mizuguchi , Katsuyoshi Yamamoto
发明人： Tsuyoshi Higuchi , Jun Funakoshi , Seiji Yamagata , Toshitaka Mizuguchi , Katsuyoshi Yamamoto
IPC分类号： H04N5/217 , H04N3/14
CPC分类号： H04N5/3598 , H03F3/087 , H04N5/3575 , H04N5/363
摘要： A second source follower circuit of a reference voltage generator includes a transistor having the same characteristics as a first source follower circuit of a pixel. Accordingly, the second source follower circuit can generate a second reference voltage according to the change in characteristics of the first source follower circuit. A noise voltage switching circuit outputs a first voltage as a noise voltage to a pixel signal generator when the noise voltage is equal to or lower than the second reference voltage. In a reset state, the noise voltage and the second reference voltage always have a predetermined voltage difference. Therefore, deterioration in image quality can be prevented even when capturing a subject having high brightness. Since a trimming circuit or the like selecting any one of a plurality of reference voltages according to characteristics of a formed transistor becomes unnecessary, the cost of an imaging device can be reduced.
摘要翻译：参考电压发生器的第二源极跟随器电路包括具有与像素的第一源极跟随器电路相同的特性的晶体管。因此，第二源极跟随器电路可以根据第一源极跟随器电路的特性的变化产生第二参考电压。当噪声电压等于或低于第二参考电压时，噪声电压切换电路将作为噪声电压的第一电压输出到像素信号发生器。在复位状态下，噪声电压和第二参考电压总是具有预定的电压差。因此，即使在拍摄具有高亮度的被摄体的情况下也能够防止图像质量的劣化。由于不需要根据形成的晶体管的特性选择多个参考电压中的任何一个的微调电路等，因此可以降低成像装置的成本。

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