专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5228052A Plasma ashing apparatus 失效
标题翻译：等离子灰化设备
公开(公告)号：US5228052A
公开(公告)日：1993-07-13
申请号：US757766
申请日：1991-09-11
申请人： Masashi Kikuchi , Richard L. Bersin , Masaki Uematsu
发明人： Masashi Kikuchi , Richard L. Bersin , Masaki Uematsu
IPC分类号： H01J37/32
CPC分类号： H01J37/32082 , H01J37/32541 , H01J2237/334
摘要： A plasma ashing apparatus has a vacuum treatment chamber for receiving therein a substrate coated with a resist film, a reactive gas introduction pipe equipped with a plasma applicator, a vacuum exhaust pipe, a heating means for heating the substrate, and two pieces of electrodes disposed in parallel to each other. One of the electrodes is a substrate electrode and the other thereof is a circular counter electrode. These two electrodes are commonly connected to an RF power source to thereby constitute a cathode electrode. Multiple concentric perforations are formed in the counter electrode except for a rib portion. A central perforation is formed in the center of the counter electrode. The concentric perforations are formed at every distance, from the center, equivalent to a diameter of the central perforation, while leaving circular electrode surfaces corresponding in width to a radius of of the perforation.
摘要翻译：等离子体灰化装置具有真空处理室，用于在其中容纳涂覆有抗蚀剂膜的基材，配备有等离子体涂布器的反应气体引入管，真空排气管，用于加热基板的加热装置和设置的两个电极彼此平行。电极中的一个是基板电极，另一个是圆形对电极。这两个电极通常连接到RF电源，从而构成阴极电极。除了肋部之外，在对电极中形成多个同心穿孔。中心穿孔形成在对电极的中心。同心的穿孔在距离中心的每个距离处形成，相当于中心穿孔的直径，同时留下宽度对应于穿孔半径的圆形电极表面。

2. 发明授权

US4148705A Gas plasma reactor and process 失效
标题翻译：气体等离子体反应器和工艺
公开(公告)号：US4148705A
公开(公告)日：1979-04-10
申请号：US774239
申请日：1977-03-04
申请人： James F. Battey , Richard L. Bersin , Richard F. Reichelderfer , Joseph M. Welty
发明人： James F. Battey , Richard L. Bersin , Richard F. Reichelderfer , Joseph M. Welty
IPC分类号： B01J12/00 , C23C8/36 , H01J37/32 , C23C15/00 , C23F1/00
CPC分类号： H01J37/32082 , B01J12/002 , C23C8/36 , H01J37/32577 , H01J37/32623 , B01J2219/0894
摘要： Process and apparatus for carrying out a reaction, such as etching aluminum, in the glow discharge of a gas plasma. The plasma is formed between a pair of closely spaced electrodes, and a distributed impedance is provided in series with the plasma to assure uniform distribution of the ionizing current and the glow discharge of the plasma throughout the region between the electrodes.
摘要翻译：用于在气体等离子体的辉光放电中进行反应的方法和装置，例如蚀刻铝。等离子体形成在一对紧密间隔的电极之间，并且提供与等离子体串联的分布阻抗，以确保电离电流的均匀分布和等离子体在电极之间的整个区域的辉光放电。

3. 发明授权

US5882489A Processes for cleaning and stripping photoresist from surfaces of semiconductor wafers 失效
标题翻译：用于从半导体晶片的表面清洁和剥离光致抗蚀剂的工艺
公开(公告)号：US5882489A
公开(公告)日：1999-03-16
申请号：US638279
申请日：1996-04-26
申请人： Richard L. Bersin , Han Xu
发明人： Richard L. Bersin , Han Xu
IPC分类号： H01L21/302 , G03F7/42 , H01L21/02 , H01L21/027 , H01L21/3065 , H01L21/3213 , C23C14/34 , C23F1/00
CPC分类号： H01L21/02071
摘要： A method for removing a resist layer, particularly in via holes, includes plasma to remove organic compounds, rinsing the device in deionized water, and sputtering with argon to remove inorganic compounds. The order of rinsing and sputtering can be reversed. These methods avoid the use of acids and industrial solvents.
摘要翻译：用于去除抗蚀剂层的方法，特别是在通孔中的方法包括用于去除有机化合物的等离子体，用去离子水冲洗该装置，并用氩气溅射以去除无机化合物。冲洗和溅射的顺序可以颠倒。这些方法避免使用酸和工业溶剂。

4. 发明授权

US5795831A Cold processes for cleaning and stripping photoresist from surfaces of semiconductor wafers 失效
标题翻译：用于从半导体晶片的表面清洁和剥离光致抗蚀剂的冷加工方法
公开(公告)号：US5795831A
公开(公告)日：1998-08-18
申请号：US731612
申请日：1996-10-16
申请人： Izumi Nakayama , Yukio Masuda , Richard L. Bersin , Han Xu , Quain Geng
发明人： Izumi Nakayama , Yukio Masuda , Richard L. Bersin , Han Xu , Quain Geng
IPC分类号： G03F7/42 , H01L21/311 , C23F1/02
CPC分类号： H01L21/31138 , G03F7/42
摘要： A method for removing a resist layer includes an RIE process and a downstream microwave process, each performed such that the temperature of the wafer is no greater than about 60.degree. C. By performing these processes cold, the resist need not be pre-heated to drive off solvents. The RIE process and the microwave process can be performed sequentially or simultaneously.
摘要翻译：除去抗蚀剂层的方法包括RIE工艺和下游微波处理，每个进行使得晶片的温度不大于约60℃。通过冷却进行这些处理，抗蚀剂不需要预热驱除溶剂。 RIE过程和微波处理可以顺序或同时执行。

5. 发明授权

US4303467A Process and gas for treatment of semiconductor devices 失效
标题翻译：用于半导体器件处理的工艺和气体
公开(公告)号：US4303467A
公开(公告)日：1981-12-01
申请号：US850713
申请日：1977-11-11
申请人： Frank Scornavacca , Richard L. Bersin
发明人： Frank Scornavacca , Richard L. Bersin
IPC分类号： H01L21/302 , C23F4/00 , G03F7/42 , H01L21/3065 , H01L21/311 , C23F1/02 , C03C15/00 , C03C25/06 , H01L21/306
CPC分类号： H01L21/3065 , C23F4/00 , G03F7/427 , H01L21/31116 , H01L21/31138
摘要： Gas plasma process and gas mixture useful for the removal of materials in the manufacture of semiconductor devices. Substrate wafers or other semiconductor devices are exposed to a gaseous plasma containing SiF.sub.4 or SiF.sub.4 and oxygen for a time sufficient to effect a desired removal of material from the wafer or device. The process and gas are particularly suitable for selective etching of Si.sub.3 N.sub.4 and the stripping of photoresist, as well as the etching of materials such as silicon and compounds containing silicon.
摘要翻译：气体等离子体工艺和气体混合物可用于去除半导体器件制造中的材料。将衬底晶片或其它半导体器件暴露于含有SiF 4或SiF 4和氧的气态等离子体的时间足以实现材料从晶片或器件的期望去除。该方法和气体特别适用于Si 3 N 4的选择性蚀刻和光致抗蚀剂的剥离，以及诸如硅和含硅化合物的材料的蚀刻。

6. 发明授权

US5908319A Cleaning and stripping of photoresist from surfaces of semiconductor wafers 失效
标题翻译：从半导体晶片的表面清洁和剥离光致抗蚀剂
公开(公告)号：US5908319A
公开(公告)日：1999-06-01
申请号：US637137
申请日：1996-04-24
申请人： Han Xu , Richard L. Bersin
发明人： Han Xu , Richard L. Bersin
IPC分类号： G03F7/42 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/311
CPC分类号： H01L21/31138 , G03F7/427
摘要： In a microwave downstream process, a microwave plasma is formed from a gas that has a small quantity of fluorine to enhance ashing without substantial oxide loss. This process can be performed before or after other microwave downstream processes or reactive ion etching processes.
摘要翻译：在微波下游工艺中，微波等离子体由具有少量氟的气体形成，以增强灰分而没有实质的氧化物损失。该过程可以在其它微波下游工艺或反应离子蚀刻工艺之前或之后进行。

7. 发明授权

US5099100A Plasma etching device and process 失效
标题翻译：等离子体蚀刻装置及工艺
公开(公告)号：US5099100A
公开(公告)日：1992-03-24
申请号：US415453
申请日：1989-09-29
申请人： Richard L. Bersin , Michael J. Singleton
发明人： Richard L. Bersin , Michael J. Singleton
IPC分类号： H01J37/32 , H01J65/04 , H05H1/46 , H05K3/08
CPC分类号： H01J37/32009 , H01J65/044 , H05H1/46 , H05K3/08
摘要： Plasma etching device and process in which a chamber is divided into two regions by a perforated screen. Objects to be etched are placed in one region, and a plasma is formed in the other region. Etching occurs in the first region, and structure is included for heating the etched objects in the first region to facilitate the removal of photoresist used to define the areas to be etched.
摘要翻译：等离子体蚀刻装置和其中通过穿孔筛分成两个区域的工艺。要蚀刻的对象被放置在一个区域中，并且在另一个区域中形成等离子体。蚀刻发生在第一区域中，并且包括用于加热第一区域中的蚀刻物体的结构以便于去除用于限定待蚀刻区域的光致抗蚀剂。

8. 发明授权

US4687544A Method and apparatus for dry processing of substrates 失效
标题翻译：干燥处理基材的方法和装置
公开(公告)号：US4687544A
公开(公告)日：1987-08-18
申请号：US851108
申请日：1986-04-14
申请人： Richard L. Bersin
发明人： Richard L. Bersin
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/306 , B29C37/00 , B44C1/22 , C03C15/00
CPC分类号： H01J37/32623 , H01J37/32339 , H01J37/32357 , H01J37/32422 , H01L21/3065
摘要： A method and apparatus for dry processing of a substrate is provided. More particularly, a substrate is exposed to a gas, such as an effluent from a gas plasma, having at least one reactive specie, such as a free radical, the gas having substantially no electrically charged particles present. Simultaneously, the substrate is irradiated with ultraviolet radiation to enhance the reaction rate in a controlled manner. Also provided is a means for irradiating the wafer with infrared radiation to heat the wafer independently of the irradiation with ultraviolet radiation.
摘要翻译：提供了一种用于干燥处理基板的方法和装置。更具体地，将基底暴露于气体，例如来自气体等离子体的流出物，其具有至少一种反应性物质，例如自由基，所述气体基本上不带有带电粒子。同时，用紫外线照射基板，以受控的方式提高反应速率。还提供了用红外辐射照射晶片以独立于紫外线照射的方式加热晶片的装置。

9. 发明授权

US4699689A Method and apparatus for dry processing of substrates 失效
标题翻译：干燥处理基材的方法和装置
公开(公告)号：US4699689A
公开(公告)日：1987-10-13
申请号：US824438
申请日：1986-01-31
申请人： Richard L. Bersin
发明人： Richard L. Bersin
IPC分类号： H01J37/32 , H01L21/3065 , B44C1/22 , B29C17/08 , C03C15/00 , C03C25/06
CPC分类号： H01J37/32623 , H01J37/32339 , H01J37/32357 , H01J37/32422 , H01L21/3065
摘要： A method is provided for removing photoresist from a substrate, wherein the method comprises producing a gas plasma from a gas mixture comprising oxygen, CF.sub.4, nitrogen, and hydrogen; substantially eliminating any electrically charged particles from the plasma to produce a plasma effluent; heating the substrate to a temperature in the range of from about 250 to 300 degrees Centigrade; exposing the substrate and photoresist thereon to the effluent while said temperature is maintained; and simultaneously with the exposure step, irradiating the substrate with collimated ultraviolet radiation.
摘要翻译：提供了用于从基底去除光致抗蚀剂的方法，其中该方法包括从包含氧，CF 4，氮和氢的气体混合物制备气体等离子体; 基本上消除了来自等离子体的任何带电粒子以产生等离子体流出物; 将基板加热至约250至300摄氏度的温度; 在保持所述温度的同时将衬底和光致抗蚀剂暴露于流出物; 并且在曝光步骤的同时，用准直的紫外线照射基板。

10. 发明授权

US4689112A Method and apparatus for dry processing of substrates 失效
标题翻译：干燥处理基材的方法和装置
公开(公告)号：US4689112A
公开(公告)日：1987-08-25
申请号：US918545
申请日：1986-10-10
申请人： Richard L. Bersin
发明人： Richard L. Bersin
IPC分类号： H01J37/32 , H01L21/3065 , B44C1/22 , B29C37/00 , C03C15/00 , C03C25/06
CPC分类号： H01J37/32623 , H01J37/32339 , H01J37/32357 , H01J37/32422 , H01L21/3065
摘要： This invention relates to an apparatus and process for the uniform dry process treatment of the surface of a substrate. More particularly, the invention relates to an apparatus and process wherein a gas plasma composition having at least one reactive specie is supplied through a first inlet port into a chamber means containing the substrate to be treated. A second gas is also supplied into the chamber through a second inlet port thereby redirecting the gas plasma composition into contact with the substrate in a substantially uniform manner.
摘要翻译：本发明涉及用于均匀干法处理基材表面的装置和方法。更具体地，本发明涉及一种装置和方法，其中具有至少一种反应物种的气体等离子体组合物通过第一入口提供到包含待处理基底的腔室装置中。第二气体也通过第二入口进入腔室，从而以基本上均匀的方式将气体等离子体组合物重新定向为与衬底接触。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式