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1. 发明申请

US20100248092A1 MASK BLANK SUBSTRATE, MASK BLANK, EXPOSURE MASK, MASK BLANK SUBSTRATE MANUFACTURING METHOD, AND SEMICONDUCTOR MANUFACTURING METHOD 有权
标题翻译：掩模空白基板，掩模布，曝光掩模，掩模基板制造方法和半导体制造方法
公开(公告)号：US20100248092A1
公开(公告)日：2010-09-30
申请号：US12797304
申请日：2010-06-09
申请人： Masaru TANABE , Atsushi KAWAGUCHI , Hiroyuki AKAGAWA , Akihiro KAWAHARA
发明人： Masaru TANABE , Atsushi KAWAGUCHI , Hiroyuki AKAGAWA , Akihiro KAWAHARA
IPC分类号： G03F7/20 , G03F1/00
CPC分类号： G03F1/60 , G03F1/50 , Y10T428/31616
摘要： In a mask blank substrate to be chucked by a mask stage of an exposure system, the flatness of a rectangular flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the mask blank substrate on its side to be chucked by the mask stage is 0.6 μm or less, and at least three of four corner portions of the flatness measurement area each have a shape that rises toward the outer peripheral side.
摘要翻译：在通过曝光系统的掩模台夹持的掩模基板中，除了掩模基板的主面的外周端面外侧的2mm外侧的矩形平坦度测量区域的平坦度被掩模台夹持的面积为0.6μm以下，平坦度测量区域的四个角部中的至少三个角分别具有朝向外周侧上升的形状。

2. 发明申请

US20100035164A1 MASK BLANK SUBSTRATE, MASK BLANK, EXPOSURE MASK, MASK BLANK SUBSTRATE MANUFACTURING METHOD, AND SEMICONDUCTOR MANUFACTURING METHOD 有权
标题翻译：掩模空白基板，掩模布，曝光掩模，掩模基板制造方法和半导体制造方法
公开(公告)号：US20100035164A1
公开(公告)日：2010-02-11
申请号：US12540405
申请日：2009-08-13
申请人： Masaru TANABE , Atsushi Kawaguchi , Hiroyuki Akagawa , Akihiro Kawahara
发明人： Masaru TANABE , Atsushi Kawaguchi , Hiroyuki Akagawa , Akihiro Kawahara
IPC分类号： G03F7/20 , G03F1/00
CPC分类号： G03F1/60 , G03F1/50 , Y10T428/31616
摘要： In a mask blank substrate to be chucked by a mask stage of an exposure system, the flatness of a rectangular flatness measurement area excluding an area of 2 mm inward from an outer peripheral end surface on a main surface of the mask blank substrate on its side to be chucked by the mask stage is 0.6 μm or less, and at least three of four corner portions of the flatness measurement area each have a shape that rises toward the outer peripheral side.
摘要翻译：在通过曝光系统的掩模台夹持的掩模基板中，除了掩模基板的主面的外周端面外侧的2mm外侧的矩形平坦度测量区域的平坦度被掩模台夹持的面积为0.6μm以下，平坦度测量区域的四个角部中的至少三个分别具有朝向外周侧上升的形状。

3. 发明申请

US20100173232A1 MASK BLANK PROVIDING SYSTEM, MASK BLANK PROVIDING METHOD, MASK BLANK TRANSPARENT SUBSTRATE MANUFACTURING METHOD, MASK BLANK MANUFACTURING METHOD, AND MASK MANUFACTURING METHOD 有权
标题翻译： MASK BLANK提供系统，MASK BLANK提供方法，MASK BLANK透明基板制造方法，MASK BLANK制造方法和MASK制造方法
公开(公告)号：US20100173232A1
公开(公告)日：2010-07-08
申请号：US12725032
申请日：2010-03-16
申请人： Osamu SUZUKI , Hiroyuki AKAGAWA , Masaru TANABE , Atsushi KAWAGUCHI , Naozumi ISHIBASHI
发明人： Osamu SUZUKI , Hiroyuki AKAGAWA , Masaru TANABE , Atsushi KAWAGUCHI , Naozumi ISHIBASHI
IPC分类号： G03F1/00
CPC分类号： G03F1/60 , G03F1/50 , Y10T428/31616
摘要： A mask blank manufacturing department manufactures a mask blank by forming a thin film to be a mask pattern on a mask blank transparent substrate. When providing the mask blank to a mask manufacturing department, the mask blank manufacturing department provides optical characteristic information (transmittance variation) of the mask blank transparent substrate and optical characteristic information (transmittance variation and/or phase difference variation) of the mask blank to the mask manufacturing department. The optical characteristic information of the mask blank transparent substrate is provided to the mask blank manufacturing department from a materials processing department that manufactures mask blank transparent substrates.
摘要翻译：掩模制造部门通过在掩模板透明基板上形成作为掩模图案的薄膜来制造掩模坯料。当掩模制造部门提供掩模坯料时，掩模制造部门提供掩模毛坯透明基板的光学特性信息（透射率变化）和掩模毛坯的光学特性信息（透射率变化和/或相位差变化）面具制造部门。掩模坯料透明基板的光学特性信息由制造掩模板透明基板的材料加工部门提供给掩模坯料制造部。

4. 发明申请

US20120015286A1 MASK BLANK SUBSTRATE, MASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：掩蔽空白基板，掩模布，光电及其制造方法
公开(公告)号：US20120015286A1
公开(公告)日：2012-01-19
申请号：US13241691
申请日：2011-09-23
申请人： Masaru TANABE
发明人： Masaru TANABE
IPC分类号： G03F7/20 , G03F1/00
CPC分类号： G03F1/60 , Y10T428/24802
摘要： A mask blank substrate for a photomask is chucked on a mask stage of an exposure apparatus. A main surface, on the side where a thin film for a transfer pattern is to be formed, of the mask blank substrate has a flatness of 0.3 μm or less in a 142 mm square area including its central portion and has a convex shape being relatively high at its central portion and relatively low at its peripheral portion. The difference upon fitting, to the main surface of the mask blank substrate, a virtual reference main surface, having a spherical shape in a 132 mm square area, of a virtual reference substrate is 40 nm or less.
摘要翻译：用于光掩模的掩模空白基板被夹在曝光装置的掩模台上。掩模毛坯基板的形成有转印图案用薄膜的一侧的主面在包括其中央部的142mm的正方形区域中的平坦度为0.3μm以下，并且具有相对的凸形在其中心部分高，在其周边部分相对较低。对于虚拟参考基板，在掩模坯料基板的主表面上具有132mm正方形面积的球形的虚拟参考主表面的差异为40nm以下。

5. 发明申请

US20110287347A1 THIN FILM EVALUATION METHOD, MASK BLANK, AND TRANSFER MASK 有权
标题翻译：薄膜评估方法，遮罩和转印面膜
公开(公告)号：US20110287347A1
公开(公告)日：2011-11-24
申请号：US13109655
申请日：2011-05-17
申请人： Kazuya SAKAI , Masaru TANABE
发明人： Kazuya SAKAI , Masaru TANABE
IPC分类号： G03F1/00 , B01J19/12 , G03F7/20
CPC分类号： G03F1/50 , G03F1/82
摘要： Provided is a thin film evaluation method for a transfer mask which is adapted to be applied with ArF excimer laser exposure light and comprises a thin film formed with a pattern on a transparent substrate. The method includes intermittently irradiating pulsed laser light onto the thin film to thereby evaluate the irradiation durability of the thin film.
摘要翻译：本发明提供一种转印掩模的薄膜评价方法，其适用于应用ArF准分子激光曝光光，并且包括在透明基板上形成有图案的薄膜。该方法包括将脉冲激光间歇地照射到薄膜上，从而评价薄膜的照射耐久性。

6. 发明申请

US20120214093A1 PHOTOMASK BLANK, PHOTOMASK BLANK MANUFACTURING METHOD, AND PHOTOMASK MANUFACTURING METHOD 有权
标题翻译： PHOTOMASK BLANK，PHOTOMASK BLANK制造方法和光电制造方法
公开(公告)号：US20120214093A1
公开(公告)日：2012-08-23
申请号：US13460893
申请日：2012-05-01
申请人： Masaru TANABE
发明人： Masaru TANABE
IPC分类号： G03F1/26 , G03F7/20 , G03F1/00
CPC分类号： G03F1/32
摘要： A photomask blank manufacturing method that forms, on a light-transmissive substrate, a thin film for forming a transfer pattern, thereby producing a thin-film coated substrate and then presses the thin-film coated substrate. The pressing is carried out, for example, by a cold isostatic pressing method in a range of 1000 to 10000 atmospheric pressure.
摘要翻译：一种在透光性基板上形成用于形成转印图案的薄膜的光掩模坯料制造方法，由此制造薄膜涂布基板，然后压制薄膜涂覆的基板。例如通过在1000〜10000大气压的范围内的冷等静压法进行压制。

7. 发明申请

US20110027701A1 MASK BLANK TRANSPARENT SUBSTRATE MANUFACTURING METHOD, MASK BLANK MANUFACTURING METHOD, AND EXPOSURE MASK MANUFACTURING METHOD 有权
标题翻译：掩模空白透明基板制造方法，掩模制造方法和曝光掩模制造方法
公开(公告)号：US20110027701A1
公开(公告)日：2011-02-03
申请号：US12904970
申请日：2010-10-14
申请人： Masaru TANABE
发明人： Masaru TANABE
IPC分类号： G03F1/00 , G03F7/20 , G06F17/50
CPC分类号： G03F7/705 , G03F1/32 , G03F1/60 , G03F7/70783
摘要： A method includes a preparation step of preparing a transparent substrate having a precision-polished main surface, a surface shape information obtaining step of obtaining, as surface shape information, height information at a plurality of measurement points on the main surface of the transparent substrate that contacts a mask stage of an exposure apparatus, a simulation step of obtaining, based on the surface shape information and shape information of the mask stage, height information at the plurality of measurement points by simulating the state where the transparent substrate is set in the exposure apparatus, a flatness calculation step of calculating, based on the height information obtained through the simulation, a flatness of the transparent substrate when it is set in the exposure apparatus, a judging step of judging whether or not the calculated flatness satisfies a specification, and a thin film forming step of forming a thin film as serving as a mask pattern, on the main surface of the transparent substrate whose flatness satisfies the specification.
摘要翻译：一种方法包括准备具有精密抛光主表面的透明基板的准备步骤，在透明基板的主表面上的多个测量点处获得作为表面形状信息的高度信息的表面形状信息获取步骤，接触曝光装置的掩模台，模拟步骤，基于掩模台的表面形状信息和形状信息，通过模拟在曝光中设置透明基板的状态，在多个测量点处获取高度信息装置，平面度计算步骤，基于通过模拟获得的高度信息，计算在设置在曝光装置中时透明基板的平坦度;判断步骤，判断所计算的平面度是否满足规格;以及在主su上形成薄膜作为掩模图案的薄膜形成步骤平坦度满足规格的透明基板的表面。

8. 发明申请

US20110189595A1 METHOD OF MANUFACTURING A SUBSTRATE FOR A MASK BLANK, METHOD OF MANUFACTURING A MASK BLANK, METHOD OF MANUFACTURING A TRANSFER MASK , AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：用于制造掩模板的基板的制造方法，制造掩模布的方法，制造转印掩模的方法以及制造半导体器件的方法
公开(公告)号：US20110189595A1
公开(公告)日：2011-08-04
申请号：US13016645
申请日：2011-01-28
申请人： Masaru TANABE
发明人： Masaru TANABE
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： C03B20/00 , C03C19/00 , G03F1/00 , G03F1/50 , G03F1/60 , G03F7/20 , Y02P40/57
摘要： In a simulation step, based on information of a main surface shape of a transparent substrate and shape information of a mask stage of an exposure apparatus and using a deflection differential equation taking into account a twist deformation, height information at a plurality of measurement points is obtained by simulating a state where the transparent substrate is set in the exposure apparatus. Based on the height information obtained through the simulation, a flatness of the transparent substrate when it is set in the exposure apparatus is calculated in a flatness calculation step. Then, by judging in a selection step whether or not the calculated flatness satisfies a specification, the transparent substrate whose flatness satisfies the specification is used as a substrate for a mask blank.
摘要翻译：在模拟步骤中，基于透明基板的主表面形状的信息和曝光装置的掩模台的形状信息，并且考虑到扭曲变形使用偏转微分方程，在多个测量点处的高度信息是通过模拟将透明基板设置在曝光装置中的状态获得。基于通过模拟获得的高度信息，在平坦度计算步骤中计算在曝光装置中设置透明基板时的平坦度。然后，通过在选择步骤中判断所计算的平面度是否满足规格，将平坦度满足说明书的透明基板用作掩模板的基板。

9. 发明申请

US20100081067A1 MASK BLANK SUBSTRATE SET AND MASK BLANK SET 有权
标题翻译： MASK BLANK基板设置和MASK BLANK SET
公开(公告)号：US20100081067A1
公开(公告)日：2010-04-01
申请号：US12570190
申请日：2009-09-30
申请人： Masaru TANABE
发明人： Masaru TANABE
IPC分类号： G03F7/20 , G03F1/00
CPC分类号： G03F1/60 , G03F1/00
摘要： A substrate set is a mask blank substrate set including a plurality of substrates each for use in a mask blank for producing a photomask to be chucked on a mask stage of an exposure apparatus. In each of the substrates in the mask blank substrate set, a main surface, on the side where a thin film for forming a transfer pattern is to be formed, has a convex shape being relatively high at its center and relatively low at its peripheral portion. In each substrate, the flatness in a 142 mm square area, including a central portion, of the main surface is 0.3 μm or less and the difference upon fitting to a reference main surface of a reference substrate is 40 nm or less.
摘要翻译：衬底组是掩模空白衬底组，其包括多个衬底，每个衬底用于掩模坯料中，用于制造要夹持在曝光设备的掩模台上的光掩模。在掩模基板组中的每个基板中，要形成转印图案的薄膜侧的主表面的凸形形状在其中心处相对较高，在其周边部分相对较低。在每个基板中，主表面的142mm正方形区域（包括中心部分）的平坦度为0.3μm以下，与基准基板的基准主面嵌合的差为40nm以下。

10. 发明申请

US20120251928A1 METHOD OF MANUFACTURING A TRANSFER MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造转移掩模的方法和制造半导体器件的方法
公开(公告)号：US20120251928A1
公开(公告)日：2012-10-04
申请号：US13436132
申请日：2012-03-30
申请人： Masaru TANABE , Hideaki MITSUI , Naoki NISHIDA , Satoshi IWASHITA
发明人： Masaru TANABE , Hideaki MITSUI , Naoki NISHIDA , Satoshi IWASHITA
IPC分类号： G03F1/84 , G03F7/20
CPC分类号： G03F1/84 , G03F1/70 , G03F1/72
摘要： An internal defect or the like of a transfer mask is detected using transmitted light quantity distribution data of an inspection apparatus. Using a die-to-die comparison inspection method, inspection light is irradiated to a first region of a thin film to obtain a first transmitted light quantity distribution, the inspection light is also irradiated to a second region of the thin film to obtain a second transmitted light quantity distribution, a predetermined-range difference distribution is produced by plotting coordinates at which difference light quantity values calculated from a comparison between the first transmitted light quantity distribution and the second transmitted light quantity distribution are each not less than a first threshold value and less than a second threshold value, and a selection is made of a transfer mask in which a region with high density of plotting is not detected in the predetermined-range difference distribution.
摘要翻译：使用检查装置的透射光量分布数据检测转印掩模的内部缺陷等。使用管芯间的比较检查方法，将检查光照射到薄膜的第一区域以获得第一透射光量分布，也将检查光照射到薄膜的第二区域，以获得第二透射光通过绘制从第一透射光量分布和第二透射光量分布之间的比较计算出的差光量值分别不小于第一阈值的坐标，并产生预定范围的差分布，小于第二阈值，并且选择在预定范围差分布中未检测到具有高密度绘图密度的区域的转印掩模。

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