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1. 发明申请

US20090101918A1 SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US20090101918A1
公开(公告)日：2009-04-23
申请号：US12300352
申请日：2007-05-17
申请人： Masao Uchida , Koichi Hashimoto , Masashi Hayashi
发明人： Masao Uchida , Koichi Hashimoto , Masashi Hayashi
IPC分类号： H01L29/12 , H01L21/04
CPC分类号： H01L29/7802 , H01L21/046 , H01L29/0696 , H01L29/1608 , H01L29/41741 , H01L29/66068 , H01L29/7828
摘要： A semiconductor device includes: a semiconductor layer 10; a semiconductor region 15s of a first conductivity type defined on the surface 10s of the semiconductor layer; a semiconductor region 14s of a second conductivity type defined on the surface 10s of the semiconductor layer to surround the semiconductor region 15s; and a conductor 19 with a conductive surface 19s to contact with the semiconductor regions 15s and 14s. The semiconductor layer 10 includes silicon carbide. At least one of the semiconductor region 15s and the conductive surface 19s is not circular. The semiconductor region 15s and the conductive surface 19s are shaped such that as the degree of misalignment between the conductive surface 19s and the semiconductor region 15s increases from zero through one-third of the width of the conductive surface 19s, a portion of the profile of the conductive surface 19s that crosses the semiconductor region 15s has smoothly changing lengths.
摘要翻译：半导体器件包括：半导体层10; 限定在半导体层的表面10s上的第一导电类型的半导体区域15s; 限定在半导体层的表面10s上以包围半导体区域15s的第二导电类型的半导体区域14s; 以及具有导电表面19s以与半导体区域15s和14s接触的导体19。半导体层10包括碳化硅。半导体区域15s和导电表面19s中的至少一个不是圆形的。半导体区域15s和导电表面19s被成形为使得当导电表面19s和半导体区域15s之间的未对准程度从零增加到导电表面19s的宽度的三分之一时，轮廓的一部分穿过半导体区域15s的导电表面19s具有平滑变化的长度。

2. 发明授权

US08129758B2 Semiconductor element and manufacturing method therefor 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US08129758B2
公开(公告)日：2012-03-06
申请号：US12676212
申请日：2009-07-03
申请人： Masao Uchida , Masashi Hayashi , Koichi Hashimoto
发明人： Masao Uchida , Masashi Hayashi , Koichi Hashimoto
IPC分类号： H01L27/10
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/1608 , H01L29/66068 , H01L29/7828
摘要： A semiconductor device includes: a semiconductor layer including silicon carbide, which has been formed on a substrate; a semiconductor region 15 of a first conductivity type defined on the surface of the semiconductor layer 10; a semiconductor region 14 of a second conductivity type, which is defined on the surface 10s of the semiconductor layer so as to surround the semiconductor region 15 of the first conductivity type; and a conductor 19 with a conductive surface 19s that contacts with the semiconductor regions 15 and 14 of the first and second conductivity types. On the surface 10s of the semiconductor layer, the semiconductor region 15 of the first conductivity type has at least one first strip portion 60 that runs along a first axis i. The width C1 of the semiconductor region 15 of the first conductivity type as measured along the first axis i is greater than the width A1 of the conductive surface 19s as measured along the first axis i. And the periphery of the conductive surface 19s crosses the at least one first strip portion 60, 61.
摘要翻译：半导体器件包括：已经形成在衬底上的包含碳化硅的半导体层; 限定在半导体层10的表面上的第一导电类型的半导体区域15; 限定在半导体层的表面10s上以包围第一导电类型的半导体区域15的第二导电类型的半导体区域14; 以及具有与第一和第二导电类型的半导体区域15和14接触的导电表面19s的导体19。在半导体层的表面10s上，第一导电类型的半导体区域15具有沿着第一轴线i延伸的至少一个第一条带部分60。沿着第一轴线i测量的第一导电类型的半导体区域15的宽度C1大于沿着第一轴线i测量的导电表面19s的宽度A1。并且导电表面19s的周边与至少一个第一条带部分60,61交叉。

3. 发明授权

US08125005B2 Semiconductor element and method for manufacturing same 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US08125005B2
公开(公告)日：2012-02-28
申请号：US12300352
申请日：2007-05-17
申请人： Masao Uchida , Koichi Hashimoto , Masashi Hayashi
发明人： Masao Uchida , Koichi Hashimoto , Masashi Hayashi
IPC分类号： H01L27/148
CPC分类号： H01L29/7802 , H01L21/046 , H01L29/0696 , H01L29/1608 , H01L29/41741 , H01L29/66068 , H01L29/7828
摘要： A semiconductor device includes: a semiconductor layer 10; a semiconductor region 15s of a first conductivity type defined on the surface 10s of the semiconductor layer; a semiconductor region 14s of a second conductivity type defined on the surface 10s of the semiconductor layer to surround the semiconductor region 15s; and a conductor 19 with a conductive surface 19s to contact with the semiconductor regions 15s and 14s. The semiconductor layer 10 includes silicon carbide. At least one of the semiconductor region 15s and the conductive surface 19s is not circular. The semiconductor region 15s and the conductive surface 19s are shaped such that as the degree of misalignment between the conductive surface 19s and the semiconductor region 15s increases from zero through one-third of the width of the conductive surface 19s, a portion of the profile of the conductive surface 19s that crosses the semiconductor region 15s has smoothly changing lengths.
摘要翻译：半导体器件包括：半导体层10; 限定在半导体层的表面10s上的第一导电类型的半导体区域15s; 限定在半导体层的表面10s上以包围半导体区域15s的第二导电类型的半导体区域14s; 以及具有导电表面19s以与半导体区域15s和14s接触的导体19。半导体层10包括碳化硅。半导体区域15s和导电表面19s中的至少一个不是圆形的。半导体区域15s和导电表面19s被成形为使得当导电表面19s和半导体区域15s之间的未对准程度从零增加到导电表面19s的宽度的三分之一时，轮廓的一部分穿过半导体区域15s的导电表面19s具有平滑变化的长度。

4. 发明申请

US20100295062A1 SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US20100295062A1
公开(公告)日：2010-11-25
申请号：US12676212
申请日：2009-07-03
申请人： Masao Uchida , Masashi Hayashi , Koichi Hashimoto
发明人： Masao Uchida , Masashi Hayashi , Koichi Hashimoto
IPC分类号： H01L29/78 , H01L29/24 , H01L21/04
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/1608 , H01L29/66068 , H01L29/7828
摘要： A semiconductor device includes: a semiconductor layer including silicon carbide, which has been formed on a substrate; a semiconductor region 15 of a first conductivity type defined on the surface of the semiconductor layer 10; a semiconductor region 14 of a second conductivity type, which is defined on the surface 10s of the semiconductor layer so as to surround the semiconductor region 15 of the first conductivity type; and a conductor 19 with a conductive surface 19s that contacts with the semiconductor regions 15 and 14 of the first and second conductivity types. On the surface 10s of the semiconductor layer, the semiconductor region 15 of the first conductivity type has at least one first strip portion 60 that runs along a first axis i. The width C1 of the semiconductor region 15 of the first conductivity type as measured along the first axis i is greater than the width A1 of the conductive surface 19s as measured along the first axis i. And the periphery of the conductive surface 19s crosses the at least one first strip portion 60, 61.
摘要翻译：半导体器件包括：已经形成在衬底上的包含碳化硅的半导体层; 限定在半导体层10的表面上的第一导电类型的半导体区域15; 限定在半导体层的表面10s上以包围第一导电类型的半导体区域15的第二导电类型的半导体区域14; 以及具有与第一和第二导电类型的半导体区域15和14接触的导电表面19s的导体19。在半导体层的表面10s上，第一导电类型的半导体区域15具有沿着第一轴线i延伸的至少一个第一条带部分60。沿着第一轴线i测量的第一导电类型的半导体区域15的宽度C1大于沿着第一轴线i测量的导电表面19s的宽度A1。并且导电表面19s的周边与至少一个第一条带部分60,61交叉。

5. 发明申请

US20100207125A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100207125A1
公开(公告)日：2010-08-19
申请号：US12676415
申请日：2008-10-24
申请人： Masao Uchida , Kazuya Utsunomiya , Masashi Hayashi
发明人： Masao Uchida , Kazuya Utsunomiya , Masashi Hayashi
IPC分类号： H01L29/24 , H01L21/04
CPC分类号： H01L29/66068 , H01L21/0485 , H01L29/45 , H01L29/6606 , H01L29/7828 , H01L29/872
摘要： A semiconductor device according to the present invention includes: a silicon carbide substrate (11) that has a principal surface and a back surface; a semiconductor layer (12), which has been formed on the principal surface of the silicon carbide substrate; and a back surface ohmic electrode layer (1d), which has been formed on the back surface of the silicon carbide substrate. The back surface ohmic electrode layer (1d) includes: a reaction layer (1da), which is located closer to the back surface of the silicon carbide substrate and which includes titanium, silicon and carbon; and a titanium nitride layer (1db), which is located more distant from the back surface of the silicon carbide substrate.
摘要翻译：根据本发明的半导体器件包括：具有主表面和后表面的碳化硅衬底（11）; 半导体层（12），其形成在所述碳化硅衬底的主表面上; 以及形成在碳化硅基板的背面上的背面欧姆电极层（1d）。背面欧姆电极层（1d）包括：反应层（1da），其位于更靠近碳化硅基板的背面，并且包括钛，硅和碳; 和位于比碳化硅衬底的背面更远的氮化钛层（1db）。

6. 发明授权

US08933463B2 Semiconductor element, semiconductor device, and power converter 有权
标题翻译：半导体元件，半导体器件和功率转换器
公开(公告)号：US08933463B2
公开(公告)日：2015-01-13
申请号：US13780876
申请日：2013-02-28
申请人： Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Koichi Hashimoto , Shun Kazama
发明人： Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Koichi Hashimoto , Shun Kazama
IPC分类号： H01L29/16 , H01L29/66 , H01L29/78 , H03K17/14 , H01L29/45
CPC分类号： H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/7805 , H01L29/7827 , H01L29/7828 , H03K17/145
摘要： A semiconductor element including an MISFET exhibits diode characteristics in a reverse direction through an epitaxial channel layer. The semiconductor element includes: a silicon carbide semiconductor substrate of a first conductivity type, semiconductor layer of the first conductivity type, body region of a second conductivity type, source region of the first conductivity type, epitaxial channel layer in contact with the body region, source electrode, gate insulating film, gate electrode and drain electrode. If the voltage applied to the gate electrode is smaller than a threshold voltage, the semiconductor element functions as a diode wherein current flows from the source electrode to the drain electrode through the epitaxial channel layer. The absolute value of the turn-on voltage of this diode is smaller than the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.
摘要翻译：包括MISFET的半导体元件通过外延沟道层在相反方向上表现出二极管特性。半导体元件包括：第一导电类型的碳化硅半导体衬底，第一导电类型的半导体层，第二导电类型的主体区域，第一导电类型的源极区域，与身体区域接触的外延沟道层，源电极，栅极绝缘膜，栅电极和漏电极。如果施加到栅电极的电压小于阈值电压，则半导体元件用作二极管，其中电流从源电极通过外延沟道层流到漏电极。该二极管的导通电压的绝对值小于由体区和第一碳化硅半导体层形成的体二极管的导通电压。

7. 发明授权

US08283973B2 Semiconductor element, semiconductor device, and electric power converter 有权
标题翻译：半导体元件，半导体器件和电力转换器
公开(公告)号：US08283973B2
公开(公告)日：2012-10-09
申请号：US13389555
申请日：2010-08-09
申请人： Koichi Hashimoto , Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Shun Kazama
发明人： Koichi Hashimoto , Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Shun Kazama
IPC分类号： G05F3/02
CPC分类号： H01L29/7828 , H01L29/1608 , H01L29/66068 , H01L29/78 , H01L29/7838 , H02M7/5387 , Y02B70/1483
摘要： A semiconductor element 100 including an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer 50. The semiconductor element 100 includes a semiconductor layer 20 of a first conductivity type, a body region 30 of a second conductivity type, source and drain regions 40 and 75 of the first conductivity type, an epitaxial channel layer 50 in contact with the body region, source and drain electrodes 45 and 70, a gate insulating film 60, and a gate electrode 65. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor element 100 functions as a diode in which current flows from the source electrode 45 to the drain electrode 70 through the epitaxial channel layer 50. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.
摘要翻译：包括根据本发明的MISFET的半导体元件100的特征在于通过外延沟道层50在相反方向上具有二极管特性。半导体元件100包括第一导电类型的半导体层20，第一导电类型的体区30 第二导电类型，第一导电类型的源极和漏极区域40和75，与主体区域接触的外延沟道层50，源极和漏极电极45和70，栅极绝缘膜60和栅电极65.如果施加到MISFET的栅电极的电压小于阈值电压，半导体元件100用作二极管，其中电流通过外延沟道层50从源电极45流到漏极70。绝对值该二极管的导通电压小于由体区和第一硅碳化物形成的体二极管的导通电压的导通电压 e半导体层。

8. 发明申请

US20120057386A1 SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND POWER CONVERTER 有权
标题翻译：半导体元件，半导体器件和电源转换器
公开(公告)号：US20120057386A1
公开(公告)日：2012-03-08
申请号：US13266271
申请日：2010-04-28
申请人： Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Koichi Hashimoto , Shun Kazama
发明人： Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Koichi Hashimoto , Shun Kazama
IPC分类号： H02M7/537 , H01L29/24
CPC分类号： H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/7805 , H01L29/7827 , H01L29/7828 , H03K17/145
摘要： A semiconductor element 100 including an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer 50. The semiconductor element 100 includes a silicon carbide semiconductor substrate 10 of a first conductivity type, a semiconductor layer 20 of the first conductivity type, a body region 30 of a second conductivity type, a source region 40 of the first conductivity type, an epitaxial channel layer 50 in contact with the body region, a source electrode 45, a gate insulating film 60, a gate electrode 65 and a drain electrode 70. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor element 100 functions as a diode in which current flows from the source electrode 45 to the drain electrode 70 through the epitaxial channel layer 50. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.
摘要翻译：包括根据本发明的MISFET的半导体元件100的特征在于通过外延沟道层50在相反方向上具有二极管特性。半导体元件100包括第一导电类型的碳化硅半导体衬底10，半导体层20 第一导电类型的体区30，第一导电类型的源极区40，与体区接触的外延沟道层50，源电极45，栅极绝缘膜60，栅电极65和漏电极70.如果施加到MISFET的栅电极的电压小于阈值电压，则半导体元件100用作二极管，其中电流从源电极45流到漏电极70通过外延沟道层50.该二极管的导通电压的绝对值小于体二的导通电压的绝对值由所述体区和所述第一碳化硅半导体层形成。

9. 发明授权

US08237172B2 Semiconductor device having a silicon carbide substrate with an ohmic electrode layer in which a reaction layer is arranged in contact with the silicon carbide substrate 有权
标题翻译：具有具有欧姆电极层的碳化硅衬底的半导体器件，其中反应层与碳化硅衬底接触地布置
公开(公告)号：US08237172B2
公开(公告)日：2012-08-07
申请号：US12676415
申请日：2008-10-24
申请人： Masao Uchida , Kazuya Utsunomiya , Masashi Hayashi
发明人： Masao Uchida , Kazuya Utsunomiya , Masashi Hayashi
IPC分类号： H01L31/0312 , H01L21/28
CPC分类号： H01L29/66068 , H01L21/0485 , H01L29/45 , H01L29/6606 , H01L29/7828 , H01L29/872
摘要： A semiconductor device according to the present invention includes: a silicon carbide substrate (11) that has a principal surface and a back surface; a semiconductor layer (12), which has been formed on the principal surface of the silicon carbide substrate; and a back surface ohmic electrode layer (1d), which has been formed on the back surface of the silicon carbide substrate. The back surface ohmic electrode layer (1d) includes: a reaction layer (1da), which is located closer to the back surface of the silicon carbide substrate and which includes titanium, silicon and carbon; and a titanium nitride layer (1db), which is located more distant from the back surface of the silicon carbide substrate.
摘要翻译：根据本发明的半导体器件包括：具有主表面和后表面的碳化硅衬底（11）; 半导体层（12），其形成在所述碳化硅衬底的主表面上; 以及形成在碳化硅基板的背面上的背面欧姆电极层（1d）。背面欧姆电极层（1d）包括：反应层（1da），其位于更靠近碳化硅基板的背面，并且包括钛，硅和碳; 和位于比碳化硅衬底的背面更远的氮化钛层（1db）。

10. 发明申请

US20120138951A1 SEMICONDUCTOR CHIP AND PROCESS FOR PRODUCTION THEREOF 有权
标题翻译：半导体芯片及其生产工艺
公开(公告)号：US20120138951A1
公开(公告)日：2012-06-07
申请号：US13389708
申请日：2011-05-13
申请人： Masashi Hayashi , Masao Uchida , Kunimasa Takahashi
发明人： Masashi Hayashi , Masao Uchida , Kunimasa Takahashi
IPC分类号： H01L29/06 , H01L29/20 , H01L21/78 , H01L29/24
CPC分类号： H01L29/7813 , H01L21/0475 , H01L27/0207 , H01L29/045 , H01L29/0619 , H01L29/0657 , H01L29/1608 , H01L29/2003 , H01L29/6606 , H01L29/66068 , H01L29/7811 , H01L29/7828 , H01L29/808 , H01L29/8613 , H01L29/872
摘要： A semiconductor chip of the present invention is a semiconductor device that includes a hexagonal semiconductor layer having anisotropic mechanical properties. A semiconductor chip (21), when viewed from a direction perpendicular to the semiconductor chip (21), has a rectangular shape that has a first side (1A) and a second side (1B) orthogonal to the first side (1A). The amount of thermal deformation along a direction in which the first side (1A) extends and the amount of thermal deformation along a direction in which the second side (1B) extends are substantially equal to each other.
摘要翻译：本发明的半导体芯片是具有各向异性机械特性的六方半导体层的半导体装置。当从垂直于半导体芯片（21）的方向观察时，半导体芯片（21）具有与第一侧（1A）正交的第一侧（1A）和第二侧（1B）的矩形形状。沿着第一侧（1A）延伸的方向的热变形量和沿着第二侧（1B）延伸的方向的热变形量基本相等。

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