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1. 发明授权

US4965650A Bipolar transistor and method of producing the same 失效
标题翻译：双极晶体管及其制造方法
公开(公告)号：US4965650A
公开(公告)日：1990-10-23
申请号：US420656
申请日：1989-10-11
申请人： Masanori Inada , Kazuo Eda , Yorito Ota , Atsushi Nakagawa , Manabu Yanagihara
发明人： Masanori Inada , Kazuo Eda , Yorito Ota , Atsushi Nakagawa , Manabu Yanagihara
IPC分类号： H01L21/331 , H01L29/08 , H01L29/417 , H01L29/737
CPC分类号： H01L29/66318 , H01L29/0804 , H01L29/41708 , H01L29/7371 , Y10S148/01 , Y10S148/072
摘要： A dummy emitter (a dummy collector, in an inverted type) is formed in the portion corresponding to an emitter (a collector, in the inverted type) region, on a multiplayer structural material including layers for forming emitter, base and collector, and using it as mask, an external base region is exposed by etching, and a projection of the emitter (the collector, in the inverted type) region is formed, while the dummy emitter (the dummy collector, in the inverted type) is inverted into an emitter (a collector, in the inverted type) electrode, thereby forming an emitter (a collector, in the inverted type) electrode metal layer covering the whole upper surface of the emitter (the collector, in the inverted type). Using the thus formed emitter (the collector, in the inverted type) electrode metal layer, a base electrode metal layer is formed, by self-alignment, adjacent to the emitter (the collector, in the inverted type). In another method, on a multilayer structural material, impurities are introduced outside the portion corresponding to the base region of a bipolar transistor in order to insulate, at least, a portion of the layer forming the base, and if necessary a portion of the layer forming the emitter and a portion of the layer forming the collector. Further, an extension layers and the layer forming the collector, and an extension type dummy emitter (a dummy collector, in the inverted type) is formed which extends from the emitter (the collector, in the inverted type) on the base portion to the insulating region formed by transforming from the semiconductor material forming the base, and using it as mask, the external base region is exposed to form an emitter-including layer and the dummy emitter (the dummy collector, in the inverted type) is replaced by an emitter (a collector, in the inverted type) electrode metal layer covering the whole upper surface of the emitter-including layer.

2. 发明授权

US5166081A Method of producing a bipolar transistor 失效
标题翻译：生产双极晶体管的方法
公开(公告)号：US5166081A
公开(公告)日：1992-11-24
申请号：US549589
申请日：1990-06-27
申请人： Masanori Inada , Kazuo Eda , Yorito Ota , Atsushi Nakagawa , Manabu Yanagihara
发明人： Masanori Inada , Kazuo Eda , Yorito Ota , Atsushi Nakagawa , Manabu Yanagihara
IPC分类号： H01L21/331 , H01L29/08 , H01L29/417 , H01L29/737
CPC分类号： H01L29/66318 , H01L29/0804 , H01L29/41708 , H01L29/7371 , Y10S148/01 , Y10S148/072
摘要： A dummy emitter is formed in the portion corresponding to an emitter region, on a multiplayer structural material comprising layers for forming emitter, base and collector, and using it as mask, an external base region is exposed by etching, and a projection of emitter region is formed, while the dummy emitter is inverted into an emitter electrode, thereby forming an emitter electrode metal layer to cover the whole upper surface of the emitter. Using thus formed emitter electrode metal layer, a base electrode metal layer is formed, by self-alignment, adjacently to the emitter. In other method, on a multilayer structural material, impurities are introduced outside the portion corresponding to the base region of a bipolar transistor in order to insulate, at least, the layer to form the emitter, the layer to form the base, or at most, these layers and the layer to form the collector, and an extension type dummy emitter extending from the emitter portion to the insulating region formed by transforming from the semiconductor material to form the emitter and using it as mask, the external base region is exposed to form a projection coupling the emitter region and insulating region, and the dummy emitter is inverted to transform into an emitter electrode metal layer to cover the whole upper surface of the projection.

3. 发明授权

US5037769A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5037769A
公开(公告)日：1991-08-06
申请号：US330956
申请日：1989-03-28
申请人： Masanori Inada , Kazuo Eda , Yorito Ota
发明人： Masanori Inada , Kazuo Eda , Yorito Ota
IPC分类号： H01L29/36 , H01L29/737
CPC分类号： H01L29/36 , H01L29/7371 , Y10S148/01 , Y10S148/072
摘要： A semiconductor device of a multilayer structure comprising semiconductor materials of different properties manufactured by using at least a step of epitaxially forming a semiconductor material layer on a substrate and a passivation film layer thereover, a step of introducing impurities into specific portions of the epitaxially formed semiconductor material layer and a step of removing the passivation film layer formed directly above the epitaxially formed semiconductor material layer within an epitaxial device and then applying epitaxial growing. Impurities introduced additionally to specific portions of the layer inside are substantially eliminated at the boundary adjacent the layer above the region introduced with impurities and the properties of the thus-produced semiconductors vary abruptly at the boundary between the layer in which the impurities are introduced and the layer thereabove. The material used for the passivation film layer comprises one that can be epitaxially formed and easily removed at a temperature and in a atmosphere under which the epitaxially formed layer below the passivation film are not decomposed or evaporized.
摘要翻译：一种多层结构的半导体器件，包括通过至少在衬底上外延形成半导体材料层的步骤和其上的钝化膜层而制造的具有不同性质的半导体材料，将杂质引入外延形成的半导体的特定部分材料层和去除在外延装置内的外延形成的半导体材料层正上方形成的钝化膜层，然后施加外延生长的步骤。在与内部区域相邻的边界处附近引入的层的特定部分的杂质基本上消除，并且由此产生的半导体的性质在其中引入杂质的层与其之间的边界处突然变化层以上。用于钝化膜层的材料包括可以在外部形成的并且在钝化膜下面的外延形成层不分解或蒸发的温度和气氛中容易除去的材料。

4. 发明授权

US5147775A Method of fabricating a high-frequency bipolar transistor 失效
标题翻译：制作高频双极晶体管的方法
公开(公告)号：US5147775A
公开(公告)日：1992-09-15
申请号：US570958
申请日：1990-08-21
申请人： Yorito Ota , Masanori Inada , Manabu Yanagihara
发明人： Yorito Ota , Masanori Inada , Manabu Yanagihara
IPC分类号： H01L21/331 , H01L29/10 , H01L29/737
CPC分类号： H01L29/66318 , H01L29/1004 , H01L29/7371 , Y10S148/01 , Y10S148/072
摘要： A bipolar transistor with improved high-frequency performance is invented. The improvement is attained by eliminating a parasitic base-collector capacitance. The invented transistor is constructed upon a semi-insulating substrate, and wherein a region which underlies an extrinsic base region is semi-insulative such that the extrinsic base region does not substantially overlap the collector contact region and the collector region when viewed in the direction perpendicular to the substrate. Here, it's worthwhile to point out that a portion under the extrinsic base region is made completely semi-insulative down to the substrate. As a result, the transistor has substantially no parasitic base-collector capacitance. Also, a novel method, utilizing a self-align technique which uses a "first mask" for defining a collector contact region and a collector region, a "second mask" for defining an extrinsic base region, and a "third mask" determined by self-alignment using the first and the second mask for defining an emitter region, is disclosed to fabricate the bipolar transistor mentioned above.

5. 发明授权

US4746626A Method of manufacturing heterojunction bipolar transistors 失效
标题翻译：异质结双极晶体管的制造方法
公开(公告)号：US4746626A
公开(公告)日：1988-05-24
申请号：US48470
申请日：1987-05-08
申请人： Kazuo Eda , Masanori Inada , Yorito Ota
发明人： Kazuo Eda , Masanori Inada , Yorito Ota
IPC分类号： H01L21/331 , H01L29/73 , H01L29/737 , H01L21/203
CPC分类号： H01L29/66318 , H01L29/73 , H01L29/7371
摘要： A heterojunction bipolar transistor having excellent high-frequency characteristics is manufactured by forming a semi-insulating semiconductor layer on a collector (or emitter) layer, removing a part of the semi-insulating semiconductor layer to form a cut portion so that the collector layer is exposed at the cut portion, growing a base layer on the semi-insulating semiconductor layer, on a slant wall of the cut portion and on the exposed part of the collector layer, and growing an emitter (or collector) layer on the base layer. A base layer may be preliminarily formed on the semi-insulating semiconductor layer before forming the cut portion. Energy band gap of the emitter is greater than that of the base.
摘要翻译：通过在集电极（或发射极）层上形成半绝缘性半导体层，除去半绝缘性半导体层的一部分，形成切断部，使集电体层为在切割部分露出，在半绝缘半导体层上生长基底层，在切割部分的倾斜壁上和集电体层的暴露部分上生长基底层上的发射极（或集电极）层。在形成切割部分之前，可以在半绝缘半导体层上预先形成基底层。发射极的能带隙大于基极的能带隙。

6. 发明授权

US4400683A Voltage-dependent resistor 失效
标题翻译：电压相关电阻
公开(公告)号：US4400683A
公开(公告)日：1983-08-23
申请号：US303613
申请日：1981-09-18
申请人： Kazuo Eda , Masanori Inada , Michio Matsuoka
发明人： Kazuo Eda , Masanori Inada , Michio Matsuoka
IPC分类号： H01C7/102 , H01C7/10
CPC分类号： H01C7/102
摘要： A voltage-dependent resistor having at least one zinc oxide (ZnO) layer adjacent to at least one metal oxide layer of bismuth oxide (Bi.sub.2 O.sub.3) and at least one of the members selected from the group consisting of cobalt oxide (Co.sub.2 O.sub.3) manganese oxide (MnO.sub.2) antimony oxide (Sb.sub.2 O.sub.3) and zinc oxide (ZnO).
摘要翻译：具有至少一个与氧化铋（Bi 2 O 3）的至少一个金属氧化物层相邻的氧化锌（ZnO）层和选自氧化钴（Co 2 O 3）氧化锰（Bi 2 O 3）中的至少一种的电压相关电阻器） MnO 2）氧化锑（Sb 2 O 3）和氧化锌（ZnO）。

7. 发明授权

US5214958A Misfiring detecting apparatus for an internal combustion device 失效
标题翻译：内部燃烧装置的故障检测装置
公开(公告)号：US5214958A
公开(公告)日：1993-06-01
申请号：US834812
申请日：1992-02-13
申请人： Masanori Inada , Akira Demizu , Akihiro Nakagawa
发明人： Masanori Inada , Akira Demizu , Akihiro Nakagawa
IPC分类号： F02D45/00 , F02P17/12 , G01M15/04 , G01M15/05 , G01M15/10 , G01M15/11
CPC分类号： G01M15/042 , G01M15/05 , G01M15/102 , G01M15/11
摘要： An apparatus for defecting occurrence of misfiring in an internal combustion engine with improved reliability. A change in an angular velocity of a crankshaft of the engine and a change in the output of an air/fuel ratio sensor are monitored. Only when both changes indicate occurrence of misfiring independently from each other, it is decided that misfiring in the cylinder has taken place. Reliability in misfiring detection is improved by using the results obtained through at least two mutually different types of misfiring detections.
摘要翻译：一种用于在可靠性提高的内燃机中缺陷发生故障的装置。监测发动机的曲轴的角速度的变化和空气/燃料比传感器的输出的变化。只有当两个变化都指示彼此独立地发生失火时，则确定已经发生了气缸中的点火。通过使用通过至少两种相互不同类型的失火检测获得的结果，提高了失火检测的可靠性。

8. 发明授权

US5257533A Misfire detection device for an internal combustion engine 失效
标题翻译：内燃机失火检测装置
公开(公告)号：US5257533A
公开(公告)日：1993-11-02
申请号：US798579
申请日：1991-11-26
申请人： Masanori Inada
发明人： Masanori Inada
IPC分类号： G01M15/04 , F02D45/00 , F02P17/12 , G01M15/11 , G01M15/00
CPC分类号： G01M15/11
摘要： A misfire detection device for an internal combustion engine determines the pulse width T.sub.1 and the low level interval T.sub.2 of a rotation signal Sc generated by a rotation signal sensor. The rising and falling edges of the pulses of the rotation signal Sc corresponds to predetermined reference angular positions of respective cylinders. The ratio T.sub.2 /T.sub.1 or T.sub.2 /(T.sub.1 +T.sub.2) is calculated and an occurrence of misfire is detected when the ratio exceeds a predetermined reference level.
摘要翻译：用于内燃机的失火检测装置确定由旋转信号传感器产生的旋转信号Sc的脉冲宽度T1和低电平间隔T2。旋转信号Sc的脉冲的上升沿和下降沿对应于各个气缸的预定参考角度位置。计算比率T2 / T1或T2 /（T1 + T2），并且当比率超过预定参考水平时检测到失火的发生。

9. 发明授权

US5301546A Misfire detecting device for internal combustion engine 失效
标题翻译：内燃机失火检测装置
公开(公告)号：US5301546A
公开(公告)日：1994-04-12
申请号：US834363
申请日：1992-02-12
申请人： Masanori Inada , Akira Demizu , Akihiro Nakagawa
发明人： Masanori Inada , Akira Demizu , Akihiro Nakagawa
IPC分类号： F02B75/02 , F02P17/12 , G01M15/11 , G01M15/00
CPC分类号： G01M15/11 , F02P17/12 , F02B2075/027
摘要： In a misfire detecting device for an internal combustion engine, a crank angle detector detects the crank angle of the engine, a speed detector detects the speed of the engine from the crank angle thus detected, a load detector detects the load of the engine from the speed thus detected; and a misfire detector detects the misfire rate of the engine from the load thus detected, and outputs a misfire detection signal when the misfire rate thus detected exceeds a misfire rate determining value set according to a certain amount of load.
摘要翻译：在用于内燃机的失火检测装置中，曲柄角检测器检测发动机的曲柄角，速度检测器根据检测到的曲柄角检测发动机的速度，负载检测器检测发动机的负荷检测速度; 并且失火检测器从由此检测到的负载检测发动机的失火率，并且当所检测到的失火率超过根据一定负荷量设定的失火速率确定值时，输出失火检测信号。

10. 发明授权

US5024083A Terminal flow sensor 失效
标题翻译：端子流量传感器
公开(公告)号：US5024083A
公开(公告)日：1991-06-18
申请号：US451058
申请日：1989-12-15
申请人： Masanori Inada , Hichiro Ohtani
发明人： Masanori Inada , Hichiro Ohtani
IPC分类号： G01F1/68 , G01F1/684 , G01F1/692
CPC分类号： G01F1/684
摘要： A thermal flow sensor has a heat-sensitive resistor which is disposed at a predetermined angle relative to the line of stream of a fluid, and which has its heat-sensitive portion disposed on the surface portion of a substrate which is positioned downstream in the direction in which the fluid flows. Since the heat-sensitive resistor is already disposed at a predetermined angle relative to the line of stream of the fluid, this permits only slight influence on, hence, variation in detection characteristic to be caused by deviation in the disposition angle. Since the heat-sensitive portion is disposed on a surface portion positioned downstream in the direction of fluid flow, this restrains dust contained in air from directly depositing on the heat-sensitive portion, hence, from causing variation in detection characteristic.
摘要翻译：热流传感器具有热敏电阻器，该热敏电阻器相对于流体流线以预定角度设置，并且其热敏部分设置在基板的表面部分上，该基板位于沿着方向其中流体流动。由于热敏电阻器相对于流体流线已经以预定角度设置，所以这仅允许由于配置角度的偏差而导致的检测特性的变化的轻微影响。由于热敏部分设置在位于流体流动方向下游的表面部分上，这就限制了空气中包含的灰尘直接沉积在热敏部分上，从而导致检测特性的变化。

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