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1. 发明授权

US08894211B2 Light emitting device and projector 有权
标题翻译：发光装置和投影仪
公开(公告)号：US08894211B2
公开(公告)日：2014-11-25
申请号：US13369696
申请日：2012-02-09
申请人： Masamitsu Mochizuki
发明人： Masamitsu Mochizuki
IPC分类号： G03B21/26 , G02B6/122 , G02B6/12 , H01L33/00 , H01L33/08
CPC分类号： G03B21/2033 , G02B6/122 , G02B2006/121 , G03B21/006 , G03B21/2066 , H01L33/0045 , H01L33/08 , H01L33/24 , H01L33/60
摘要： A light emitting device includes a first layer that generates light by injection of a current and forms a waveguide of the light, and an electrode that injects the current into the first layer, wherein the waveguide of the light has a belt-like first region and a belt-like second region, the first region has a first part with curvature, the second region has a second part with curvature, the first region and the second region are connected in a reflection part provided on a side surface of the first layer, and a first light output from the first region on a side surface of the first layer as an output surface opposed to the side surface on which the reflection part is provided and a second light output from the second region on the output surface are output in the same direction.
摘要翻译：发光器件包括通过注入电流并形成光的波导产生光的第一层和将电流注入第一层的电极，其中光的波导具有带状的第一区域和带状的第二区域，第一区域具有曲率的第一部分，第二区域具有曲率的第二部分，第一区域和第二区域连接在设置在第一层的侧表面上的反射部分中，以及从第一层的侧表面上的第一区域输出的第一光，作为与设置有反射部分的侧表面相对的输出表面，并且在输出表面上从第二区域输出的第二光输出在同方向

2. 发明授权

US08759856B2 Light emitting device and projector 有权
标题翻译：发光装置和投影仪
公开(公告)号：US08759856B2
公开(公告)日：2014-06-24
申请号：US13407248
申请日：2012-02-28
申请人： Masamitsu Mochizuki
发明人： Masamitsu Mochizuki
IPC分类号： H01L33/00 , H01L33/10 , G03B21/26 , H01K1/28
CPC分类号： H01L33/02 , G02B19/0028 , G02B19/0066 , G02B27/0961 , G03B21/14 , G03B21/2013 , G03B21/2033 , G03B21/2066 , H01L33/0045 , H01L33/20
摘要： A light emitting device includes a first layer that generates light by injection current and forms a waveguide for the light, and an electrode that injects the current into the first layer, wherein the waveguide has a first region, a second region, and a third region, the first region and the second region connect at a first reflection part, the first region and the third region connect at a second reflection part, the second region and the third region extend to an output surface, a longitudinal direction of the first region is parallel to the output surface, and a first light output from the second region at the output surface and a second light output from the third region at the output surface are output in parallel to one another.
摘要翻译：发光器件包括通过注入电流产生光并形成光的波导的第一层和将电流注入到第一层中的电极，其中波导具有第一区域，第二区域和第三区域第一区域和第二区域在第一反射部分连接，第一区域和第三区域在第二反射部分处连接，第二区域和第三区域延伸到输出表面，第一区域的纵向方向为平行于输出表面，并且从输出表面处的第二区域输出的第一光和在输出表面处从第三区域输出的第二光输出彼此平行。

3. 发明授权

US08258534B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08258534B2
公开(公告)日：2012-09-04
申请号：US13307329
申请日：2011-11-30
申请人： Masamitsu Mochizuki
发明人： Masamitsu Mochizuki
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01S5/026 , H01S5/10 , H01S5/125
摘要： A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally.
摘要翻译：发光器件包括有源层; 有源层的至少一部分构成增益区域。增益区域从第一端面和第二端面连续。所述增益区域包括第二部分，所述第一部分从第一端面延伸到第一反射表面，所述第一部分在二维方向上以相对于所述第一侧表面的法线倾斜的方向延伸; 第二部分，从第二端面延伸到第二反射表面，其方向相对于第一侧表面的法线倾斜;二维观察; 以及第三部分，从第二反射表面延伸到相对于第一反射表面的法线倾斜的方向，如二维地观察。

4. 发明授权

US08228967B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08228967B2
公开(公告)日：2012-07-24
申请号：US12722792
申请日：2010-03-12
申请人： Masamitsu Mochizuki
发明人： Masamitsu Mochizuki
IPC分类号： H01S3/081
CPC分类号： H01S5/10 , H01S5/028 , H01S5/0287 , H01S5/1003 , H01S5/1085
摘要： A light emitting device includes first and second cladding layers and an active layer therebetween including first and second side surfaces and first and second gain regions, a second side reflectance is higher than a first side reflectance, a first end surface part of the first gain region overlaps a second end surface part of the second gain region in an overlapping plane, the first gain region obliquely extends from the first end surface to a third end surface, the second gain region obliquely extends from the second end surface to a fourth end surface, a first center line connecting the centers of the first and third end surfaces and a second center line connecting the centers of the second and fourth end surfaces intersect, and the overlapping plane is shifted from the intersection point toward the first side surface.
摘要翻译：发光器件包括第一和第二覆层及其间的有源层，包括第一和第二侧表面以及第一和第二增益区域，第二侧反射率高于第一侧反射率，第一增益区域的第一端面部分在重叠平面中与第二增益区域的第二端面重叠，第一增益区域从第一端面向第三端面倾斜延伸，第二增益区域从第二端面向第四端面倾斜延伸，连接第一和第三端面的中心的第一中心线和连接第二和第四端面的中心的第二中心线相交，并且重叠平面从交点向第一侧面移动。

5. 发明申请

US20060098706A1 Surface-emitting type semiconductor laser 有权
标题翻译：表面发射型半导体激光器
公开(公告)号：US20060098706A1
公开(公告)日：2006-05-11
申请号：US11242005
申请日：2005-10-04
申请人： Atsushi Sato , Masamitsu Mochizuki
发明人： Atsushi Sato , Masamitsu Mochizuki
IPC分类号： H01S5/00
CPC分类号： H01S5/18394 , H01S5/0425 , H01S5/18311 , H01S2301/176 , H01S2301/18
摘要： To provide a surface-emitting type semiconductor laser that is capable of emitting a laser beam with a narrower radiation angle. A surface-emitting type semiconductor laser in accordance with the present invention includes: a substrate 110; a first mirror 142 provided above the substrate 110; an active layer 144 provided above the first mirror 142; a second mirror 146 provided above the active layer 144; an electrode 122 provided above the second mirror 146; and an emission surface 126 among the second mirror 146, which is not covered by the electrode 122, wherein the electrode 122 has a film thickness D that satisfies a formula (1) as follows, (4i+1)λ/8n≦D≦(4i+3)λ/8n . . . (1) where, in the formula (1), i is an integer, λ is an oscillation wavelength, and n is a refractive index of a material that covers the emission surface.
摘要翻译：提供能够发射具有较窄辐射角的激光束的表面发射型半导体激光器。根据本发明的表面发射型半导体激光器包括：基板110; 设置在基板110上方的第一反射镜142; 设置在第一反射镜142上方的有源层144; 设置在有源层144上方的第二反射镜146; 设置在第二反射镜146上方的电极122; 和未被电极122覆盖的第二反射镜146中的发射表面126，其中电极122具有如下的满足公式（1）的膜厚度D：（4i + 1）λ/ 8n <= D <=（4i + 3）λ/ 8n。。。（1）其中，在公式（1）中，i是整数，λ是振荡波长，n是覆盖发射表面的材料的折射率。

6. 发明申请

US20050145779A1 Photodetectors, optical modules, and optical transmission devices 失效
标题翻译：光检测器，光模块和光传输设备
公开(公告)号：US20050145779A1
公开(公告)日：2005-07-07
申请号：US10976767
申请日：2004-11-01
申请人： Masamitsu Mochizuki , Tomoko Koyama , Hajime Onishi
发明人： Masamitsu Mochizuki , Tomoko Koyama , Hajime Onishi
IPC分类号： H01L31/00 , H01L31/0216 , H01L31/108
CPC分类号： H01L31/1085 , H01L31/02162
摘要： A method is provided to provide a photodetector that can enhance the light receiving sensitivity with a relatively simple structure, and that can maintain a high speed responsiveness. A photodetector having a MSM (Metal-Semiconductor-Metal) structure, including a substrate, a multilayer film that is disposed over the substrate and includes a low refractive index layer and a high refractive index layer that are alternately laminated as a unit cycle. At least one of the low refractive index layer and the high refractive index layer is a photoabsorption layer composed of semiconductor, and a portion that is embedded in the multilayer film, the portion having at least one pair of opposing electrodes within the multilayer film. The multilayer film is formed such that a wavelength region corresponding to a band edge of a photonic band overlaps at least a part of an absorption band of the photoabsorption layer, to thereby delay a group velocity of incidence light Pin with a predetermined wavelength that belongs to the absorption band of the photoabsorption layer.
摘要翻译：提供一种提供能够以相对简单的结构提高光接收灵敏度并且可以保持高速响应性的光电检测器的方法。一种具有MSM（金属 - 半导体 - 金属）结构的光电检测器，包括基板，设置在基板上并包括低折射率层和高折射率层的多层膜，其以单位周期交替层叠。低折射率层和高折射率层中的至少一个是由半导体构成的光吸收层和嵌入多层膜中的部分，该多层膜中具有至少一对相对电极的部分。形成多层膜，使得对应于光子带的带边缘的波长区域与光吸收层的吸收带的至少一部分重叠，从而延迟具有预定波长的组入射光Pin的属性光吸收层的吸收带。

7. 发明授权

US08537872B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08537872B2
公开(公告)日：2013-09-17
申请号：US13531218
申请日：2012-06-22
申请人： Masamitsu Mochizuki
发明人： Masamitsu Mochizuki
IPC分类号： H01S3/081
CPC分类号： H01S5/10 , H01S5/028 , H01S5/0287 , H01S5/1003 , H01S5/1085
摘要： A light emitting device includes first and second cladding layers and an active layer therebetween including first and second side surfaces and first and second gain regions, a second side reflectance is higher than a first side reflectance, a first end surface part of the first gain region overlaps a second end surface part of the second gain region in an overlapping plane, the first gain region obliquely extends from the first end surface to a third end surface, the second gain region obliquely extends from the second end surface to a fourth end surface, a first center line connecting the centers of the first and third end surfaces and a second center line connecting the centers of the second and fourth end surfaces intersect, and the overlapping plane is shifted from the intersection point toward the first side surface.
摘要翻译：发光器件包括第一和第二覆层及其间的有源层，包括第一和第二侧表面以及第一和第二增益区域，第二侧反射率高于第一侧反射率，第一增益区域的第一端面部分在重叠平面中与第二增益区域的第二端面重叠，第一增益区域从第一端面向第三端面倾斜延伸，第二增益区域从第二端面向第四端面倾斜延伸，连接第一和第三端面的中心的第一中心线和连接第二和第四端面的中心的第二中心线相交，并且重叠平面从交点向第一侧面移动。

8. 发明授权

US08467427B2 Light emitting and receiving device 失效
标题翻译：发光和接收装置
公开(公告)号：US08467427B2
公开(公告)日：2013-06-18
申请号：US12694525
申请日：2010-01-27
申请人： Masamitsu Mochizuki
发明人： Masamitsu Mochizuki
IPC分类号： H01S5/026 , H01S5/10
CPC分类号： H01L27/15 , G02B6/12004 , G02B6/12007 , G02B6/124 , H01L27/14 , H01L31/0352 , H01L33/0045 , H01L33/20 , H01L2933/0083 , H01S5/1003 , H01S5/105 , H01S5/125
摘要： A device includes a semiconductor layer including first and second cladding layers sandwiching an active layer, a groove electrically separates receiving and emitting areas, an active layer part forms a continuous region between first and second end surfaces on a first side of the active layer, the gain region has a reflection surface between the first and second end surfaces reflecting gain region generated light, a first gain region portion extending from the first end surface and a second gain region portion extending from the second end surface are tilted, some light from the first portion is reflected to be emitted from the second end surface, some light from the second portion is reflected to be emitted from the first end surface, and some light transmits through a mirror portion of the reflection surface and is received in the receiving area.
摘要翻译：一种器件包括半导体层，该半导体层包括夹持有源层的第一和第二覆层，沟槽电隔离接收和发射区域，有源层部分在有源层的第一侧上在第一和第二端面之间形成连续区域，所述增益区域在所述第一和第二端面之间具有反射增益区域产生的光的反射面，从所述第一端面延伸的第一增益区域部分和从所述第二端面延伸的第二增益区域部分倾斜，部分被反射从第二端面发射，来自第二部分的一些光被反射从第一端面发射，并且一些光透过反射表面的反射镜部分并被接收在接收区域中。

9. 发明授权

US07876801B2 Surface-emitting type semiconductor laser 有权
标题翻译：表面发射型半导体激光器
公开(公告)号：US07876801B2
公开(公告)日：2011-01-25
申请号：US12503397
申请日：2009-07-15
申请人： Masamitsu Mochizuki
发明人： Masamitsu Mochizuki
IPC分类号： H01S5/00
CPC分类号： H01S5/18388 , B82Y20/00 , H01S5/026 , H01S5/0425 , H01S5/18311 , H01S5/18352 , H01S5/3432 , H01S2301/166
摘要： A surface-emitting type semiconductor laser includes: a lower mirror; an active layer formed above the lower mirror; an upper mirror formed above the active layer; and a lens section formed above the upper mirror, wherein n1>n, where λ is a design wavelength, n1 is a refractive index of a topmost layer of the upper mirror with respect to light of the design wavelength, and n is a refractive index of the lens section with respect to light of the design wavelength, the lens section has a thickness of λ/2n at an anti-node of the zeroth order resonance mode component among light resonating in the active layer, and the lens section has a thickness of λ/4n at at least a portion of an anti-node of the first order resonance mode component among the light resonating in the active layer.
摘要翻译：表面发射型半导体激光器包括：下反射镜; 形成在下反射镜上方的活性层; 形成在有源层上方的上反射镜; 以及形成在上反射镜的上方的透镜部，其中，λ为设计波长，n1为相对于设计波长的光的上反射镜的最上层的折射率，n为折射率相对于设计波长的光的透镜部分，透镜部分在有源层中谐振的光中在零级谐振模式分量的反节点处具有λ/ 2n的厚度，并且透镜部分具有厚度在有源层中谐振的光的一阶谐振模式分量的反节点的至少一部分处具有λ/ 4n。

10. 发明授权

US07477671B2 Surface-emitting type semiconductor laser 有权
标题翻译：表面发射型半导体激光器
公开(公告)号：US07477671B2
公开(公告)日：2009-01-13
申请号：US11242005
申请日：2005-10-04
申请人： Atsushi Sato , Masamitsu Mochizuki
发明人： Atsushi Sato , Masamitsu Mochizuki
IPC分类号： H01S5/00
CPC分类号： H01S5/18394 , H01S5/0425 , H01S5/18311 , H01S2301/176 , H01S2301/18
摘要： To provide a surface-emitting type semiconductor laser that is capable of emitting a laser beam with a narrower radiation angle. A surface-emitting type semiconductor laser in accordance with the present invention includes: a substrate 110; a first mirror 142 provided above the substrate 110; an active layer 144 provided above the first mirror 142; a second mirror 146 provided above the active layer 144; an electrode 122 provided above the second mirror 146; and an emission surface 126 among the second mirror 146, which is not covered by the electrode 122, wherein the electrode 122 has a film thickness D that satisfies a formula (1) as follows, (4i+1)λ/8n≦D≦(4i+3)λ/8n . . . (1) where, in the formula (1), i is an integer, λ is an oscillation wavelength, and n is a refractive index of a material that covers the emission surface.
摘要翻译：提供能够发射具有较窄辐射角的激光束的表面发射型半导体激光器。根据本发明的表面发射型半导体激光器包括：基板110; 设置在基板110上方的第一反射镜142; 设置在第一反射镜142上方的有源层144; 设置在有源层144上方的第二反射镜146; 设置在第二反射镜146上方的电极122; 和未被电极122覆盖的第二反射镜146中的发射表面126，其中电极122具有如下的满足公式（1）的膜厚度D：（4i + 1）λ/ 8n <= D <=（4i + 3）λ/ 8n。。。（1）其中，在公式（1）中，i是整数，λ是振荡波长，n是覆盖发射表面的材料的折射率。

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