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    • 1. 发明授权
    • Solar battery
    • 太阳能电池
    • US08993877B2
    • 2015-03-31
    • US13378908
    • 2010-06-16
    • Masamichi YamashitaTakashi IwadeToyoharu TeradaTakayoshi Fujimoto
    • Masamichi YamashitaTakashi IwadeToyoharu TeradaTakayoshi Fujimoto
    • H01L31/00H01L31/048
    • H01L31/048H01L31/0481Y02E10/50
    • A solar battery module has a structure in which a solar battery cell formed by a transparent electrode, a power generating element, and a back electrode is formed on a substrate, and it is sealed with a resin material such as EVA. However, there has been a problem that water enters from a gap between the substrate and a resin sealing material, thereby resulting in the corrosion of the resin or the solar battery cell. A barrier layer made of inorganic substances having portions in contact with the substrate and the second electrode is provided. Here, the barrier layer is formed by laminating at least SiO2 and an inorganic layer having a lower density than SiO2, and the film having a lower density than SiO2 is directly formed on the substrate and the second electrode.
    • 太阳能电池模块具有在基板上形成由透明电极,发电元件和背面电极形成的太阳能电池单元的结构,并且用树脂材料如EVA密封。 然而,存在水从基板和树脂密封材料之间的间隙进入的问题,从而导致树脂或太阳能电池的腐蚀。 提供由具有与基板和第二电极接触的部分的无机物质制成的阻挡层。 这里,通过层压至少SiO 2和密度低于SiO 2的无机层来形成阻挡层,并且在基板和第二电极上直接形成具有比SiO 2低的密度的膜。
    • 2. 发明申请
    • SOLAR BATTERY
    • 太阳能电池
    • US20120085407A1
    • 2012-04-12
    • US13378908
    • 2010-06-16
    • Masamichi YamashitaTakashi IwadeToyoharu TeradaTakayoshi Fujimoto
    • Masamichi YamashitaTakashi IwadeToyoharu TeradaTakayoshi Fujimoto
    • H01L31/0224
    • H01L31/048H01L31/0481Y02E10/50
    • A solar battery module has a structure in which a solar battery cell formed by a transparent electrode, a power generating element, and a back electrode is formed on a substrate, and it is sealed with a resin material such as EVA. However, there has been a problem that water enters from a gap between the substrate and a resin sealing material, thereby resulting in the corrosion of the resin or the solar battery cell. A barrier layer made of inorganic substances having portions in contact with the substrate and the second electrode is provided. Here, the barrier layer is formed by laminating at least SiO2 and an inorganic layer having a lower density than SiO2, and the film having a lower density than SiO2 is directly formed on the substrate and the second electrode.
    • 太阳能电池模块具有在基板上形成由透明电极,发电元件和背面电极形成的太阳能电池单元的结构,并且用树脂材料如EVA密封。 然而,存在水从基板和树脂密封材料之间的间隙进入的问题,从而导致树脂或太阳能电池的腐蚀。 提供由具有与基板和第二电极接触的部分的无机物质制成的阻挡层。 这里,通过层压至少SiO 2和密度低于SiO 2的无机层来形成阻挡层,并且在基板和第二电极上直接形成具有比SiO 2低的密度的膜。
    • 4. 发明申请
    • SILICON THIN-FILM AND METHOD OF FORMING SILICON THIN-FILM
    • 硅薄膜和形成硅薄膜的方法
    • US20090321895A1
    • 2009-12-31
    • US12304957
    • 2007-05-30
    • Masamichi YamashitaTakashi IwadeKohshi TaguchiMitsuo Yamazaki
    • Masamichi YamashitaTakashi IwadeKohshi TaguchiMitsuo Yamazaki
    • H01L21/31H01L29/06
    • C23C16/30C23C16/401H01L51/5256
    • Issue Providing a silicon film which can prevent damage of electronic devices formed on a substrate from occurrence, can prevent apparatus arrangement from becoming large-scale one, can improve coherency of a silicon thin film to a substrate, and is hardly happened crack and/or flaking, and providing a method for forming the silicon thin film.Solving Means A method for forming a silicon thin film according to the present invention is a method for forming a silicon thin film having isolation function or barrier function, on a substrate K using CVD method, and comprises a step for forming a first thin film on the substrate using plasma CVD method employing gas containing hydrogen element and a gas containing silicon element; a step for forming a second thin film using plasma CVD method employing a gas containing nitrogen element and a gas containing silicon element; and a step for forming a third thin film using plasma CVD method employing a gas containing oxygen element and a gas containing silicon element.
    • 问题提供能够防止在基板上形成的电子器件的损坏的硅膜可以防止装置排列变大,可以提高硅薄膜与基板的一致性,并且几乎不发生裂纹和/或 剥离,提供形成硅薄膜的方法。 解决方法根据本发明的形成硅薄膜的方法是使用CVD法在基板K上形成具有隔离功能或阻挡功能的硅薄膜的方法,并且包括用于形成第一薄膜的步骤 使用等离子体CVD法的基板,其使用含有氢元素的气体和含有硅元素的气体; 使用含有氮元素的气体和含有硅元素的气体的等离子体CVD法形成第二薄膜的工序; 以及使用含有氧元素的气体和含有硅元素的气体的等离子体CVD法形成第三薄膜的工序。
    • 6. 发明授权
    • Silicon thin-film and method of forming silicon thin-film
    • 硅薄膜和硅薄膜的形成方法
    • US07776670B2
    • 2010-08-17
    • US12304957
    • 2007-05-30
    • Masamichi YamashitaTakashi IwadeKohshi TaguchiMitsuo Yamazaki
    • Masamichi YamashitaTakashi IwadeKohshi TaguchiMitsuo Yamazaki
    • H01L21/00
    • C23C16/30C23C16/401H01L51/5256
    • Issue Providing a silicon film which can prevent damage of electronic devices formed on a substrate from occurrence, can prevent apparatus arrangement from becoming large-scale one, can improve coherency of a silicon thin film to a substrate, and is hardly happened crack and/or flaking, and providing a method for forming the silicon thin film.Solving Means A method for forming a silicon thin film according to the present invention is a method for forming a silicon thin film having isolation function or barrier function, on a substrate K using CVD method, and comprises a step for forming a first thin film on the substrate using plasma CVD method employing gas containing hydrogen element and a gas containing silicon element; a step for forming a second thin film using plasma CVD method employing a gas containing nitrogen element and a gas containing silicon element; and a step for forming a third thin film using plasma CVD method employing a gas containing oxygen element and a gas containing silicon element.
    • 问题提供能够防止在基板上形成的电子器件的损坏的硅膜可以防止装置排列变大,可以提高硅薄膜与基板的一致性,并且几乎不发生裂纹和/或 剥离,提供形成硅薄膜的方法。 解决方法根据本发明的形成硅薄膜的方法是使用CVD法在基板K上形成具有隔离功能或阻挡功能的硅薄膜的方法,并且包括用于形成第一薄膜的步骤 使用等离子体CVD法的基板,其使用含有氢元素的气体和含有硅元素的气体; 使用含有氮元素的气体和含有硅元素的气体的等离子体CVD法形成第二薄膜的工序; 以及使用含有氧元素的气体和含有硅元素的气体的等离子体CVD法形成第三薄膜的工序。
    • 7. 发明授权
    • Method and apparatus for the mass spectrometric analysis of solutions
    • 解决方案的质谱分析方法和装置
    • US4531056A
    • 1985-07-23
    • US486645
    • 1983-04-20
    • Michael J. LabowskyJohn B. FennMasamichi Yamashita
    • Michael J. LabowskyJohn B. FennMasamichi Yamashita
    • B01D59/44G01N27/62G01N30/72H01J49/04H01J49/10
    • H01J49/165B01D59/44H01J49/044H01J49/0477G01N30/7273G01N30/7293
    • An electrospray ion source for a mass spectrometer capable of generating ions from samples dissolved in a solution comprises a capillary tube through which the said solution is pumped into a first chamber maintained substantially at atmospheric pressure and in which an inert gas is flowing in a direction counter to the flow of the solution, and a small orifice in the end wall of the chamber opposite to and aligned with the capillary. A high potential difference is applied between the capillary and the end wall so that the solution is electrosprayed into the chamber and ions characteristic of the sample are formed. These ions are desolvated to a controllable extent by the inert gas, which may also be heated to improve the efficiency of the process and increase the maximum permissible flow rate of solution. The ions so formed pass through the small orifice into a second chamber maintained at a reduced pressure, and into a mass spectrometer. Alternatively an additional pressure reduction stage can be included, so that the ions pass into a third chamber maintained at a still lower pressure in which the mass spectrometer is situated through a conventional nozzle and skimmer arrangement. The ion source is particularly effective for the production of unfragmented and unsolvated ions from thermally unstable or involatile samples, and may be used as a liquid chromatograph--mass spectrometer interface.
    • 用于能够从溶解在溶液中的样品产生离子的质谱仪的电喷雾离子源包括毛细管,所述溶液通过该毛细管被泵入保持基本上处于大气压的第一室,并且惰性气体沿反方向流动 到溶液的流动,以及在腔室的端壁中与毛细管相对并与毛细管对准的小孔口。 在毛细管和端壁之间施加高电位差,使得溶液电喷雾到室中并形成样品的特征。 这些离子通过惰性气体被解吸到可控程度,惰性气体也可被加热以提高过程的效率并增加溶液的最大允许流速。 如此形成的离子通过小孔进入保持在减压下的第二室,并进入质谱仪。 或者,可以包括另外的减压阶段,使得离子进入维持在更低压力的第三室中,在该压力下质谱仪通过常规喷嘴和分离器排列设置。 离子源对于从热不稳定或非挥发性样品生产未分散和未溶解的离子特别有效,并且可以用作液相色谱 - 质谱仪界面。