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1. 发明授权

US5112708A Member for charging with surface layer of N-alkoxymethylated nylon effecting charging at lower voltage 失效
标题翻译：用于在低电压下用N-烷氧基甲基乙烯基化的尼龙效应充电表面填充的成员
公开(公告)号：US5112708A
公开(公告)日：1992-05-12
申请号：US696977
申请日：1991-05-02
申请人： Masami Okunuki , Hisami Tanaka , Hiroyuki Ohmori , Masafumi Hisamura
发明人： Masami Okunuki , Hisami Tanaka , Hiroyuki Ohmori , Masafumi Hisamura
IPC分类号： C08G69/48 , G03G15/02
CPC分类号： G03G15/0233 , Y10S430/102
摘要： A member for charging comprises a surface layer formed of a N-alkoxymethylated nylon. A contact charging method performs charging of a member to be charged arranged in contact with the member for charging by applying externally a voltage on the member for charging. An electrophotographic device comprises the member for charging and an electrophotographic photosensitive member arranged in contact with the member for charging.

2. 发明授权

US5669047A Charging member, electrophotographic apparatus and charging method using the same 失效
标题翻译：充电构件，电子照相设备及使用其的充电方法
公开(公告)号：US5669047A
公开(公告)日：1997-09-16
申请号：US465577
申请日：1995-06-05
申请人： Masami Okuda , Hisami Tanaka , Junichi Kishi , Hiroyuki Ohmori , Takashi Koyama , Masafumi Hisamura
发明人： Masami Okuda , Hisami Tanaka , Junichi Kishi , Hiroyuki Ohmori , Takashi Koyama , Masafumi Hisamura
IPC分类号： G03G15/02 , G03G13/00 , H01T23/00
CPC分类号： G03G15/0233 , Y10S428/906 , Y10S430/102 , Y10T428/258 , Y10T428/31507 , Y10T428/31551
摘要： A charging member for electrophotography comprising a surface layer, wherein the surface layer comprises a resin and an alkali metal salt contained therein.
摘要翻译：一种用于电子照相的充电元件，包括表面层，其中所述表面层包含树脂和其中所含的碱金属盐。

3. 发明授权

US5008706A Electrophotographic apparatus 失效
标题翻译：电子照相设备
公开(公告)号：US5008706A
公开(公告)日：1991-04-16
申请号：US426197
申请日：1989-10-25
申请人： Hiroyuki Ohmori , Hisami Tanaka , Masami Okunuki
发明人： Hiroyuki Ohmori , Hisami Tanaka , Masami Okunuki
IPC分类号： G03G5/00 , G03G5/04 , G03G15/00 , G03G15/02 , G03G21/00
CPC分类号： G03G15/751 , G03G15/0233
摘要： An electrophotographic apparatus including a photosensitive member and a charging member disposed in contact with the photosensitive member; the photosensitive member being capable of being charged by applying a voltage to the charging member; wherein the ten-point mean surface roughness (Rz.sub.1) of the photosensitive member and the ten-point means surface roughness (Rz.sub.2) of the charging member satisfy the following relationships:______________________________________0.1 micron .ltoreq. Rz.sub.1 + Rz.sub.2 .ltoreq. 6.0 microns,0.05 micron .ltoreq. Rz.sub.1 .ltoreq. 5.0 microns, and0.05 micron .ltoreq. Rz.sub.2 .ltoreq.5.0 microns.______________________________________

4. 发明授权

US5430527A Electrophotographic apparatus having cleaning width larger than charging width 失效
标题翻译：扫描宽度大于充电宽度的电子照相设备
公开(公告)号：US5430527A
公开(公告)日：1995-07-04
申请号：US263394
申请日：1994-06-21
申请人： Akio Maruyama , Junichi Kishi , Hiroyuki Ohmori , Masami Okunuki
发明人： Akio Maruyama , Junichi Kishi , Hiroyuki Ohmori , Masami Okunuki
IPC分类号： G03G5/047 , G03G15/02 , G03G21/00 , G03G5/00
CPC分类号： G03G21/0005 , G03G15/0216 , G03G5/047 , G03G2215/025 , G03G2221/0015
摘要： An image forming apparatus has a photosensitive member, a charging device, an image exposure device for exposing the photosensitive member to form a latent image, a developing device for developing the latent image with a toner to form a transferable toner image on the surface of the photosensitive member, a transfer device for transferring the toner image to a transfer material, and a cleaning device for removing a residual toner; the charging device, image exposure device, developing device, transfer device and cleaning device being disposed in the named order along the moving direction of the photosensitive member. The charging device includes an electroconductive member which directly contacts the photosensitive member surface to charge the photosensitive member surface. The electroconductive member forms a nip width with the photosensitive member of at least 0.5 mm and a load per unit contact area between the electroconductive member and photosensitive member is between 0.5-30 g/mm.sup.2. With respect to the longitudinal direction of the photosensitive member, the width of the photosensitive member surface cleaned by the cleaning device is equal to or greater than the width of the photosensitive member surface contacting the electroconductive member.
摘要翻译：图像形成装置具有感光构件，充电装置，用于曝光感光构件以形成潜像的图像曝光装置，用调色剂显影潜像的显影装置，以在该表面上形成可转印调色剂图像感光构件，用于将调色剂图像转印到转印材料的转印装置，以及用于除去残留调色剂的清洁装置; 充电装置，图像曝光装置，显影装置，转印装置和清洁装置沿着感光构件的移动方向按照所述顺序设置。充电装置包括直接接触感光构件表面以对感光构件表面充电的导电构件。导电构件与感光构件形成至少0.5mm的压区宽度，并且导电构件和感光构件之间的每单位接触面积的负载为0.5-30g / mm 2。关于感光构件的纵向方向，由清洁装置清洁的感光构件表面的宽度等于或大于与导电构件接触的感光构件表面的宽度。

5. 发明授权

US08945730B2 Storage element and memory device 有权
标题翻译：存储元件和存储器件
公开(公告)号：US08945730B2
公开(公告)日：2015-02-03
申请号：US13310846
申请日：2011-12-05
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida , Tetsuya Asayama
IPC分类号： H01L43/10 , H01L27/22 , G01R33/09 , H01L43/08
CPC分类号： H01L27/228 , G01R33/091 , G01R33/093 , G01R33/098 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1129 , Y10T428/1143 , Y10T428/115
摘要： A storage element including: a storage layer; a magnetization fixed layer; and an insulating layer, wherein by injecting spin-polarized electrons in a laminating direction of a layered structure that includes the storage layer, the insulating layer, and the magnetization fixed layer, the orientation of magnetization of the storage layer changes and recording of information is performed on the storage layer, and an Fe film and a film that includes Ni are formed in order from an interface side that is in contact with the insulating layer, and a graded composition distribution of Ni and Fe is formed after heating on at least one of the storage layer and the magnetization fixed layer.
摘要翻译：一种存储元件，包括：存储层; 磁化固定层; 和绝缘层，其中通过在包括存储层，绝缘层和磁化固定层的层状结构的层叠方向上注入自旋极化电子，存储层的磁化方向改变并且信息的记录是在与绝缘层接触的界面侧依次形成Fe膜和包含Ni的膜，并且在至少一个加热后形成Ni和Fe的分级组成分布的存储层和磁化固定层。

6. 发明授权

US08879315B2 Storage element and storage device 有权
标题翻译：存储元件和存储设备
公开(公告)号：US08879315B2
公开(公告)日：2014-11-04
申请号：US13560708
申请日：2012-07-27
申请人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
发明人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
IPC分类号： G11C11/14 , H01L43/10 , G11C11/16 , H01F10/32 , H01L27/22
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01F10/3286 , H01F10/329 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/10
摘要： Provided is a storage element including a storage layer that holds information according to a magnetization state of a magnetic body, a magnetization fixing layer that has magnetization serving as a reference of the information stored in the storage layer, and an insulation layer that is formed of a non-magnetic body disposed between the storage layer and the magnetization fixing layer. The information is stored by reversing the magnetization of the storage layer using spin torque magnetization reversal occurring with a current flowing in a lamination direction of a layer configuration of the storage layer, the insulation layer, and the magnetization fixing layer, and a size of the storage layer is less than a size in which a direction of the magnetization is simultaneously changed.
摘要翻译：提供一种存储元件，其包括存储层，其根据磁体的磁化状态保存信息;磁化固定层，其具有作为存储在存储层中的信息的参考的磁化;以及绝缘层，其由设置在所述存储层和所述磁化固定层之间的非磁性体。通过使用在存储层，绝缘层和磁化固定层的层构造的层叠方向上流动的电流发生的自旋转矩磁化反转来反转存储层的磁化来存储信息，以及存储层小于磁化方向同时变化的尺寸。

7. 发明授权

US08611139B2 Memory element and memory device 有权
标题翻译：存储器元件和存储器件
公开(公告)号：US08611139B2
公开(公告)日：2013-12-17
申请号：US13226983
申请日：2011-09-07
申请人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Hiroyuki Uchida
发明人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Hiroyuki Uchida
IPC分类号： G11C11/00
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/32 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08
摘要： There is disclosed a memory element including a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co—Fe—B magnetic layer.
摘要翻译：公开了一种包括层叠结构的存储元件，该结构包括具有垂直于膜面的磁化的存储层; 磁化固定层; 以及设置在存储层之间的绝缘层。自旋极化的电子沿着分层结构的层叠方向注入，存储层接收的有效抗磁场的大小相对于存储层的饱和磁化量小于相对于绝缘层的饱和磁化量与存储层接触，并且存储层在与绝缘层相对的一侧接触的另一侧层，至少与存储层接触的界面由氧化物膜形成，并且除了Co-Fe-B磁性层之外，存储层还包括非磁性金属和氧化物中的至少一种。

8. 发明授权

US08598671B2 Storage element, method for manufacturing storage element, and memory 有权
标题翻译：存储元件，存储元件的制造方法和存储器
公开(公告)号：US08598671B2
公开(公告)日：2013-12-03
申请号：US13163215
申请日：2011-06-17
申请人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane
发明人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane
IPC分类号： H01L29/78
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F10/329 , H01F41/307 , H01L43/08
摘要： Disclosed herein is a storage element, including: a storage layer configured to retain information based on a magnetization state of a magnetic material; and a magnetization pinned layer configured to be provided for the storage layer with intermediary of a tunnel barrier layer, wherein the tunnel barrier layer has a thickness not less than or equal to 0.1 nm to not more than or equal to 0.6 nm and interface roughness less than 0.5 nm, and information is stored in the storage layer through change in direction of magnetization of the storage layer by applying a current in a stacking direction and injecting a spin-polarized electron.
摘要翻译：这里公开了一种存储元件，包括：存储层，被配置为基于磁性材料的磁化状态来保持信息; 以及被配置为提供具有隧道势垒层的介质的存储层的磁化固定层，其中所述隧道势垒层具有不小于或等于0.1nm至不大于或等于0.6nm的厚度，并且界面粗糙度减去通过在层叠方向施加电流并注入自旋极化电子，通过存储层的磁化方向的变化来将信息存储在存储层中。

9. 发明授权

US08445980B2 Memory element and memory device 有权
标题翻译：存储器元件和存储器件
公开(公告)号：US08445980B2
公开(公告)日：2013-05-21
申请号：US13216453
申请日：2011-08-24
申请人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1675
摘要： There is disclosed a memory element which includes a layered structure. The layered structure includes a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer having magnetization perpendicular to the film face; an insulating layer provided between the memory layer and the magnetization-fixed layer; and a cap layer provided at a face side, which is opposite to the insulating layer-side face, of the memory layer, in which an electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and at least a face, which comes into contact with the memory layer, of the cap layer is formed of a Ta film.
摘要翻译：公开了一种包含分层结构的存储元件。层状结构包括具有垂直于膜面的磁化的存储层; 具有垂直于膜面的磁化的磁化固定层; 设置在所述存储层和所述磁化固定层之间的绝缘层; 以及在层叠结构的层叠方向上注入自旋极化的电子的存储层的与绝缘层侧面相反的面侧的盖层，由此磁化存储层的方向变化，进行信息记录，存储层接收的有效抗磁场的大小小于存储层的饱和磁化量，至少与盖层的记忆层由Ta膜形成。

10. 发明授权

US08437180B2 Memory and write control method 失效
标题翻译：内存和写控制方式
公开(公告)号：US08437180B2
公开(公告)日：2013-05-07
申请号：US12795933
申请日：2010-06-08
申请人： Yutaka Higo , Masanori Hosomi , Minoru Ikarashi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Kazutaka Yamane , Tetsuya Yamamoto , Kazuhiro Bessho
发明人： Yutaka Higo , Masanori Hosomi , Minoru Ikarashi , Hiroshi Kano , Shinichiro Kusunoki , Hiroyuki Ohmori , Yuki Oishi , Kazutaka Yamane , Tetsuya Yamamoto , Kazuhiro Bessho
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161
摘要： A memory includes: a memory device that has a memory layer storing data as a magnetization state of a magnetic body and a magnetization fixed layer whose direction of magnetization is fixed through a nonmagnetic layer interposed between the memory layer and the magnetization fixed layer and stores the data in the memory layer by changing a magnetization direction of the memory layer when a write current flowing in a stacked direction of the memory layer and the magnetization fixed layer is applied; and a voltage control unit that supplies the write current configured by independent pulse trains of two or more to the memory device by using a write voltage that is configured by independent pulse trains of two or more.
摘要翻译：存储器包括：存储器件，其具有存储数据作为磁体的磁化状态的数据和磁化方向的磁化固定层，该磁化固定层通过介于存储层和磁化固定层之间的非磁性层固定，并存储当存储层和磁化固定层的堆叠方向上流动的写入电流被施加时，通过改变存储层的磁化方向来改变存储层中的数据; 以及电压控制单元，其通过使用由两个或更多个独立脉冲串构成的写入电压将由两个或更多个独立脉冲串构成的写入电流提供给存储器件。

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