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1. 发明申请

US20100208525A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20100208525A1
公开(公告)日：2010-08-19
申请号：US12697505
申请日：2010-02-01
申请人： Masami HANYU , Junichi SUZUKI , Junichi YAMASHITA
发明人： Masami HANYU , Junichi SUZUKI , Junichi YAMASHITA
IPC分类号： G11C16/06
CPC分类号： G11C16/28
摘要： A non-volatile semiconductor memory device includes a sense amplifier, first and second bit lines that are connected to the sense amplifier, a first memory cell column that is connected to the first bit line, the first memory cell column being formed by a plurality of MONOS type transistors, a first constant current source that is connected to the second bit line, the first constant current source generating a reference current for the first memory cell column, and a first switch that is provided between the first constant current source and the second bit line, the first switch being formed by a MONOS type transistor.
摘要翻译：非易失性半导体存储器件包括读出放大器，连接到读出放大器的第一和第二位线，连接到第一位线的第一存储器单元列，第一存储单元列由多个 MONOS型晶体管，连接到第二位线的第一恒定电流源，产生第一存储单元列的参考电流的第一恒定电流源和设置在第一恒定电流源与第二恒定电流源之间的第一开关，第一开关由MONOS型晶体管形成。

2. 发明申请

US20130292740A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130292740A1
公开(公告)日：2013-11-07
申请号：US13802538
申请日：2013-03-13
申请人： Junichi YAMASHITA , Tomohide TERASHIMA
发明人： Junichi YAMASHITA , Tomohide TERASHIMA
IPC分类号： H01L49/02 , H01L27/06
CPC分类号： H01L28/40 , H01L27/0629 , H01L27/0652 , H01L27/0676 , H01L27/1203 , H01L28/60 , H01L29/94
摘要： In a region located between a collector electrode and a semiconductor substrate, there are a portion where a hollow region is located and a portion where no hollow region is located. Between the collector electrode and the portion where no hollow region is located in the semiconductor substrate, a floating silicon layer electrically isolated by insulating films is formed.
摘要翻译：在位于集电极和半导体基板之间的区域中，存在中空区域所在的部分和没有中空区域的部分。在集电极与半导体衬底中没有中空区域的部分之间，形成通过绝缘膜电隔离的浮动硅层。

3. 发明申请

US20130038593A1 PIXEL CIRCUIT, DISPLAY DEVICE, DRIVING METHOD OF PIXEL CIRCUIT, AND DRIVING METHOD OF DISPLAY DEVICE 有权
标题翻译：像素电路，显示装置，像素电路的驱动方法和显示装置的驱动方法
公开(公告)号：US20130038593A1
公开(公告)日：2013-02-14
申请号：US13618974
申请日：2012-09-14
申请人： Katsuhide UCHINO , Junichi YAMASHITA
发明人： Katsuhide UCHINO , Junichi YAMASHITA
IPC分类号： G06F3/038 , H05B37/02 , G09G3/30
CPC分类号： G09G3/3233 , G09G3/3258 , G09G3/3266 , G09G3/3291 , G09G2300/0417 , G09G2300/0426 , G09G2300/0819 , G09G2300/0852 , G09G2310/02 , G09G2310/06 , G09G2320/043 , G09G2330/028
摘要： A pixel circuit includes a compensating circuit that detects a decrease in the driving current from an output node side of a drive transistor and feeds back detection results to an input node side of the drive transistor to compensate for a decrease in the driving current, which decrease is attendant on a secular change of the drive transistor.
摘要翻译：像素电路包括补偿电路，其检测来自驱动晶体管的输出节点侧的驱动电流的降低，并将检测结果反馈到驱动晶体管的输入节点侧，以补偿驱动电流的降低，这降低伴随着驱动晶体管的长期变化。

4. 发明申请

US20120162164A1 PIXEL CIRCUIT AND DISPLAY DEVICE 有权
标题翻译：像素电路和显示设备
公开(公告)号：US20120162164A1
公开(公告)日：2012-06-28
申请号：US13412655
申请日：2012-03-06
申请人： Katsuhide UCHINO , Junichi YAMASHITA , Tetsuro YAMAMOTO
发明人： Katsuhide UCHINO , Junichi YAMASHITA , Tetsuro YAMAMOTO
IPC分类号： G09G5/00 , G09G3/30
CPC分类号： G09G3/3233 , G09G3/30 , G09G3/3208 , G09G3/3266 , G09G2300/0417 , G09G2300/0426 , G09G2300/043 , G09G2300/0439 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0256 , G09G2320/043 , G09G2330/028
摘要： A pixel circuit able to prevent a spread of the terminal voltages of drive transistors inside a panel and in turn able to reliably prevent deterioration of uniformity, wherein a source of a TFT serving as a drive transistor is connected to an anode of a light emitting element, a drain is connected to a power source potential, a capacitor is connected between a gate and source of the TFT, and a source potential of the TFT is connected to a fixed potential through a TFT serving as a switch transistor and wherein pixel circuit lines are connected by an upper line and bottom line and are arranged in parallel with pixel circuit power source voltage lines so as not to have intersecting parts.
摘要翻译：一种像素电路，其能够防止驱动晶体管在面板内部的端子电压的扩展，从而可以可靠地防止均匀性的劣化，其中用作驱动晶体管的TFT的源极连接到发光元件的阳极漏极连接到电源电位，电容器连接在TFT的栅极和源极之间，TFT的源极电位通过用作开关晶体管的TFT连接到固定电位，并且其中像素电路线通过上线和底线连接并且与像素电路电源电压线并联布置，以便不具有相交部分。

5. 发明申请

US20120044130A1 DISPLAY APPARATUS AND ELECTRONIC APPARATUS 有权
标题翻译：显示设备和电子设备
公开(公告)号：US20120044130A1
公开(公告)日：2012-02-23
申请号：US13285680
申请日：2011-10-31
申请人： Katsuhide UCHINO , Tetsuro YAMAMOTO , Junichi YAMASHITA
发明人： Katsuhide UCHINO , Tetsuro YAMAMOTO , Junichi YAMASHITA
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0417 , G09G2300/043 , G09G2300/0465 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0262 , G09G2310/06 , G09G2320/043
摘要： A display apparatus includes a pixel unit in which pixels are arranged in a matrix pattern; and a driving circuit for driving the pixel unit. Each of the pixels includes a signal level holding capacitor; a first transistor that is turned on/off in response to a writing signal and via which one end of the signal level holding capacitor is connected to a signal line; a second transistor having one end of the signal level holding capacitor connected to a gate thereof and the other end of the signal level holding capacitor connected to a source thereof; a current-driven self-light-emitting element whose cathode is held at a cathode potential and whose anode is connected to the source of the second transistor; a third transistor that is turned on/off in response to a driving pulse signal; and a fourth transistor that is turned on/off in response to a control signal.
摘要翻译：显示装置包括像素单元，其中像素以矩阵图案排列; 以及用于驱动像素单元的驱动电路。每个像素包括信号电平保持电容器; 第一晶体管，其响应于写入信号而导通/截止，并且信号电平保持电容器的一端连接到信号线; 第二晶体管，其信号电平保持电容器的一端连接到其栅极，并且信号电平保持电容器的另一端连接到其源极; 电流驱动的自发光元件，其阴极保持在阴极电位并且其阳极连接到第二晶体管的源极; 响应于驱动脉冲信号而导通/截止的第三晶体管; 以及响应于控制信号而导通/截止的第四晶体管。

6. 发明申请

US20090065740A1 LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE 失效
标题翻译：液晶组合物和液晶显示装置
公开(公告)号：US20090065740A1
公开(公告)日：2009-03-12
申请号：US12210040
申请日：2008-09-12
申请人： Norikatsu HATTORI , Mayumi GOTO , Junichi YAMASHITA
发明人： Norikatsu HATTORI , Mayumi GOTO , Junichi YAMASHITA
IPC分类号： C09K19/30
CPC分类号： C09K19/3066 , C09K19/42 , C09K2019/123 , C09K2019/301 , C09K2019/3016 , Y10T428/10
摘要： A liquid crystal composition having a negative dielectric anisotropy that includes two components, wherein the first component is at least one compound selected from the group of compounds represented by formulas (1-1) and (1-2), and the second component is at least one compound selected from the group of compounds represented by formulas (2-1) to (2-3): wherein, for example, R1, R2, R3 and R4 are each alkyl having 1 to 12 carbons; X1 and X2 are each fluorine; ring A, ring B, ring C, ring D, ring E, ring F and ring G are each 1,4-cyclohexylene or 1,4-phenylene; and Z1 is a single bond.
摘要翻译：一种具有负介电各向异性的液晶组合物，其包含两种成分，其中第一成分为选自式（1-1）和（1-2）所示的化合物的族群中的至少一种化合物，第二成分为至少一种选自由式（2-1）至（2-3）表示的化合物的化合物：其中，例如，R 1，R 2，R 3和R 4各自为具有1至12个碳的烷基; X1和X2各自为氟; 环A，环B，环C，环D，环E，环F和环G各自为1,4-亚环己基或1,4-亚苯基; Z1是单键。

7. 发明申请

US20130221439A1 SOI WAFER AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： SOI波形及其制造方法
公开(公告)号：US20130221439A1
公开(公告)日：2013-08-29
申请号：US13673263
申请日：2012-11-09
申请人： Kazuhiro SHIMIZU , Junichi YAMASHITA , Takuichiro SHITOMI
发明人： Kazuhiro SHIMIZU , Junichi YAMASHITA , Takuichiro SHITOMI
IPC分类号： H01L29/02 , H01L21/20
CPC分类号： G03F9/708 , B81C1/00603 , G03F9/7084 , H01L21/308 , H01L21/76256 , H01L21/764 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/54493 , H01L2924/0002 , H01L2924/00
摘要： An SOI wafer according to the present invention includes a support substrate and an insulating layer formed on the support substrate, a predetermined cavity pattern being formed on one of main surfaces of the support substrate on which the insulating layer is provided, further includes an active semiconductor layer formed on the insulating layer with the cavity pattern being closed, the active semiconductor layer not being formed in an outer peripheral portion of the support substrate, and further includes a plurality of superposition mark patterns formed in the outer peripheral portion on the one of the main surfaces of the support substrate for specifying a position of the cavity pattern.
摘要翻译：根据本发明的SOI晶片包括支撑基板和形成在支撑基板上的绝缘层，在其上设置绝缘层的支撑基板的一个主表面上形成预定的空腔图案，还包括有源半导体所述绝缘层上形成有所述空腔图案的绝缘层，所述有源半导体层不形成在所述支撑基板的外周部，并且还包括形成在所述支撑基板的所述一个的外周部的多个叠加标记图案用于指定空腔图案的位置的支撑基板的主表面。

8. 发明申请

US20110037912A1 Liquid Crystal Composition and Liquid Crystal Display Device 有权
标题翻译：液晶组合物和液晶显示装置
公开(公告)号：US20110037912A1
公开(公告)日：2011-02-17
申请号：US12829238
申请日：2010-07-01
申请人： Masayuki SAITO , Junichi YAMASHITA
发明人： Masayuki SAITO , Junichi YAMASHITA
IPC分类号： G02F1/133 , C09K19/30 , C09K19/34
CPC分类号： C09K19/3001 , C09K19/3028 , C09K19/3066 , C09K19/3068 , C09K2019/3015 , C09K2019/3021 , C09K2019/3025 , C09K2019/3078 , C09K2019/308 , Y10T428/10
摘要： The subject is to provide a liquid crystal composition that satisfies at least one of characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of a nematic phase, a low viscosity, a suitable optical anisotropy, a negatively large dielectric anisotropy, a large specific resistance, a high stability to ultraviolet light and a high stability to heat, or that is suitably balanced regarding two or more characteristics. The subject is to provide an AM device that has a short response time, a high voltage holding ratio, a high contrast ratio, a long service life and so forth.The invention provides a liquid crystal composition having a negative dielectric anisotropy that contains a specific compound having a negatively large dielectric anisotropy as a first component, and a specific two-ring compound having a low viscosity as a second component, and provides a liquid crystal display device containing the composition.
摘要翻译：本发明提供一种液晶组合物，其满足向列相的最高最高温度，向列相的低最低温度，低粘度，适当的光学各向异性，负大的介电各向异性等特性中的至少一种，比电阻大，对紫外线的稳定性高，对热的稳定性高，或者两个以上的特性适当平衡。本发明的目的是提供一种具有短的响应时间，高电压保持率，高对比度，长使用寿命等的AM器件。本发明提供具有负介电各向异性的液晶组合物，其具有作为第一成分的具有负的大的介电各向异性的特定化合物和作为第二成分的低粘度的特定的二环化合物，并且提供液晶显示装置含有组成。

9. 发明申请

US20090109602A1 METHOD FOR MANUFACTURING ELECTROLYTIC CAPACITOR AND ELECTROLYTIC CAPACITOR 有权
标题翻译：制造电解电容器和电解电容器的方法
公开(公告)号：US20090109602A1
公开(公告)日：2009-04-30
申请号：US12260596
申请日：2008-10-29
申请人： Kenji KAKUMA , Masakazu HOSOGI , Junichi YAMASHITA , Yutaka TAKETANI , Hiroyuki OKUDA , Koso ISHIHARA
发明人： Kenji KAKUMA , Masakazu HOSOGI , Junichi YAMASHITA , Yutaka TAKETANI , Hiroyuki OKUDA , Koso ISHIHARA
IPC分类号： H01G9/025
CPC分类号： H01G9/15 , H01G9/0036 , H01G9/028 , H01G9/151 , H01G11/48 , H01G11/56 , Y02E60/13 , Y10T29/417
摘要： A method for manufacturing an electrolytic capacitor comprising: forming a capacitor element having an anode foil and a cathode foil; impregnating the capacitor element with a dispersion solution containing particles of an electrically conductive solid or aggregates thereof and a dispersion solvent to form an electrically conductive solid layer having the particles of the electrically conductive solid or the aggregates thereof in the capacitor element; and impregnating the capacitor element having the electrically conductive solid layer with a solvent containing no supporting salt.
摘要翻译：一种制造电解电容器的方法，包括：形成具有阳极箔和阴极箔的电容器元件; 用含有导电固体或其聚集体颗粒的分散溶液和分散溶剂浸渍电容器元件，以在电容器元件中形成具有导电固体颗粒或其聚集体的导电固体层; 并用不含支撑盐的溶剂浸渍具有导电固体层的电容器元件。

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