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1. 发明授权

US09196501B2 Method for chemical planarization and chemical planarization apparatus 有权
标题翻译：化学平面化和化学平面化装置的方法
公开(公告)号：US09196501B2
公开(公告)日：2015-11-24
申请号：US13422969
申请日：2012-03-16
申请人： Masako Kodera , Yukiteru Matsui
发明人： Masako Kodera , Yukiteru Matsui
IPC分类号： B44C1/22 , H01L21/302 , H01L21/461 , H01L21/3105
CPC分类号： H01L21/67086 , H01L21/31055 , H01L21/67011
摘要： According to one embodiment, a method for chemical planarization includes: preparing a treatment liquid containing a hydrosilicofluoric acid aqueous solution containing silicon dioxide dissolved therein at a saturated concentration; and decreasing height of irregularity of a silicon dioxide film. In the decreasing, dissolution rate of convex portions is made larger than dissolution rate of concave portion of the irregularity while changing equilibrium state of the treatment liquid at areas being in contact with the convex portions of the irregularity, in a state in which the silicon dioxide film having the irregularity is brought into contact with the treatment liquid.
摘要翻译：根据一个实施方案，化学平面化方法包括：以饱和浓度制备含有溶解有二氧化硅的氢硅氟酸水溶液的处理液; 并降低二氧化硅膜的不规则高度。在使二氧化硅的状态下，使凹凸部的溶解率降低，使其处于与凹凸的凸部接触的区域的处理液的平衡状态，同时使凸部的溶解率大于凹凸部的凹部的溶解率使具有不规则性的膜与处理液接触。

2. 发明授权

US08703004B2 Method for chemical planarization and chemical planarization apparatus 有权
标题翻译：化学平面化和化学平面化装置的方法
公开(公告)号：US08703004B2
公开(公告)日：2014-04-22
申请号：US13423018
申请日：2012-03-16
申请人： Yukiteru Matsui , Masako Kodera , Hiroshi Tomita , Gaku Minamihaba , Akifumi Gawase
发明人： Yukiteru Matsui , Masako Kodera , Hiroshi Tomita , Gaku Minamihaba , Akifumi Gawase
IPC分类号： C03C15/00
CPC分类号： H01L21/30625 , B24B37/044 , B24B37/24 , H01L21/67075 , H01L21/67219
摘要： According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.
摘要翻译：根据一个实施例，公开了用于化学平面化的方法。该方法可以包括在具有不规则性的待处理膜上形成表面层。表面层沿着不规则结合或吸附到待处理的膜上以抑制被处理膜的溶解。该方法可以包括在待处理膜的处理溶液中平面化待处理膜，通过旋转待处理膜和加工体，同时待处理膜与处理体接触通过表面层除去凹凸部的凸部的表面层，同时将表面层留在凹凸部的凹部上，使凸部的溶解度大于凹部的溶解度。

3. 发明申请

US20110294291A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110294291A1
公开(公告)日：2011-12-01
申请号：US13035546
申请日：2011-02-25
申请人： Yukiteru Matsui , Gaku Minamihaba , Hajime Eda , Masayoshi Iwayama , Minoru Amano , Masatoshi Yoshikawa , Motoyuki Sato , Kyoichi Suguro , Masako Kodera
发明人： Yukiteru Matsui , Gaku Minamihaba , Hajime Eda , Masayoshi Iwayama , Minoru Amano , Masatoshi Yoshikawa , Motoyuki Sato , Kyoichi Suguro , Masako Kodera
IPC分类号： H01L21/768
CPC分类号： H01L21/02697 , H01L21/3212 , H01L21/7684 , H01L21/76877 , H01L21/76883 , H01L27/228
摘要： According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less.
摘要翻译：根据一个实施例，半导体器件包括设置在半导体衬底的表面区域中的开关元件，具有上表面和下表面的接触插塞以及设置在接触插塞的上表面上的功能元件。接触插头的下表面连接到开关元件。接触塞的上表面的最大粗糙度为0.2nm以下。

4. 发明授权

US08740667B2 Polishing method and polishing apparatus 有权
标题翻译：抛光方法和抛光装置
公开(公告)号：US08740667B2
公开(公告)日：2014-06-03
申请号：US13415143
申请日：2012-03-08
申请人： Masako Kodera , Yukiteru Matsui
发明人： Masako Kodera , Yukiteru Matsui
IPC分类号： B24B37/015
CPC分类号： B24B37/015 , B24B37/044 , B24B55/02
摘要： According to one embodiment, a polishing method comprises pressing a substrate being rotated against a polishing pad being rotated and supplying slurry on the polishing pad, measuring a surface temperature of the polishing pad, and when the surface temperature is not less than a predetermined temperature, jetting jet stream containing supercooled droplets from a nozzle having a narrow portion toward the polishing pad.
摘要翻译：根据一个实施例，抛光方法包括将正在旋转的衬底旋转的衬底压在抛光垫上并将浆料供应到抛光垫上，测量抛光垫的表面温度，并且当表面温度不低于预定温度时，从具有窄部分的喷嘴朝向抛光垫的喷射流包含过冷液滴。

5. 发明申请

US20130115774A1 METHOD FOR CHEMICAL PLANARIZATION AND CHEMICAL PLANARIZATION APPARATUS 有权
标题翻译：化学平面化学和化学平面化装置的方法
公开(公告)号：US20130115774A1
公开(公告)日：2013-05-09
申请号：US13422969
申请日：2012-03-16
申请人： Masako Kodera , Yukiteru Matsui
发明人： Masako Kodera , Yukiteru Matsui
IPC分类号： H01L21/3105 , C23F1/08 , H01L21/306
CPC分类号： H01L21/67086 , H01L21/31055 , H01L21/67011
摘要： According to one embodiment, a method for chemical planarization includes: preparing a treatment liquid containing a hydrosilicofluoric acid aqueous solution containing silicon dioxide dissolved therein at a saturated concentration; and decreasing height of irregularity of a silicon dioxide film. In the decreasing, dissolution rate of convex portions is made larger than dissolution rate of concave portion of the irregularity while changing equilibrium state of the treatment liquid at areas being in contact with the convex portions of the irregularity, in a state in which the silicon dioxide film having the irregularity is brought into contact with the treatment liquid.
摘要翻译：根据一个实施方案，化学平面化方法包括：以饱和浓度制备含有溶解有二氧化硅的氢硅氟酸水溶液的处理液; 并降低二氧化硅膜的不规则高度。在使二氧化硅的状态下，使凹凸部的溶解率降低，使得在不规则的凸部接触的区域改变处理液的平衡状态，使凸部的溶解率大于凹凸部的凹部的溶解率使具有不规则性的膜与处理液接触。

6. 发明申请

US20120220195A1 CMP APPARATUS, POLISHING PAD AND CMP METHOD 审中-公开
标题翻译： CMP装置，抛光垫和CMP方法
公开(公告)号：US20120220195A1
公开(公告)日：2012-08-30
申请号：US13233960
申请日：2011-09-15
申请人： Akifumi GAWASE , Yukiteru Matsui
发明人： Akifumi GAWASE , Yukiteru Matsui
IPC分类号： B24B51/00
CPC分类号： B24B37/24 , B24B37/015
摘要： According to one embodiment, a CMP apparatus includes a supplying portion supplying a slurry to a surface portion of a polishing pad including water-soluble particles, a holding portion contacting an object to be polished with the surface portion of the polishing pad in a condition of holding the object, a temperature setting portion on the surface portion of the polishing pad, the temperature setting portion setting a temperature of the surface of the polishing pad. A control portion executes a first polishing step and a second polishing step after the first polishing step, the object is polished in a condition of setting the temperature of the surface of the polishing pad within a first temperature range in the first polishing step, and the object is polished in a condition of setting the temperature of the surface of the polishing pad within a second temperature range in the second polishing step.
摘要翻译：根据一个实施例，CMP装置包括供给部分，该供给部分将抛光垫的表面部分提供到包括水溶性颗粒的抛光垫，保持部分与抛光对象物接触抛光垫的表面部分，保持物体，在抛光垫的表面部分上设置温度设定部分，温度设定部分设定抛光垫表面的温度。控制部分执行第一抛光步骤之后的第一抛光步骤和第二抛光步骤，在将抛光垫的表面的温度设定在第一抛光步骤中的第一温度范围内的条件下进行抛光，并且在第二研磨工序中，在将抛光垫的表面的温度设定在第二温度范围内的条件下进行抛光。

7. 发明授权

US07888139B2 Fabricating method of nonvolatile semiconductor storage apparatus 有权
标题翻译：非易失性半导体存储装置的制造方法
公开(公告)号：US07888139B2
公开(公告)日：2011-02-15
申请号：US12549261
申请日：2009-08-27
申请人： Yukiteru Matsui , Takeo Kubota , Yoshikuni Tateyama , Hiroyuki Kanaya , Yoshihiro Minami
发明人： Yukiteru Matsui , Takeo Kubota , Yoshikuni Tateyama , Hiroyuki Kanaya , Yoshihiro Minami
IPC分类号： H01L21/00
CPC分类号： H01L27/11507 , H01L21/0206 , H01L21/31053 , H01L21/32139 , H01L28/55
摘要： A first electrode film, a ferroelectric film, and a second electrode film are accumulated above a semiconductor in this order, a hard mask is accumulated above the second electrode, scrub cleaning is performed on the surface of the hard mask with an surfactant, the hard mask on which the scrub cleaning is performed has been patterned according to a planar shape of a ferroelectric capacitor, and etching is performed by using as a hard mask the hard mask that has been patterned.
摘要翻译：第一电极膜，铁电体膜和第二电极膜依次堆积在半导体上方，硬掩模在第二电极上方积聚，用表面活性剂对硬掩模的表面进行擦洗清洗根据铁电电容器的平面形状，对其进行擦洗清洁的掩模进行了图案化，并且通过使用已经被图案化的硬掩模作为硬掩模来进行蚀刻。

8. 发明授权

US07700489B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07700489B2
公开(公告)日：2010-04-20
申请号：US10935429
申请日：2004-09-08
申请人： Yukiteru Matsui , Gaku Minamihaba , Hiroyuki Yano , Atsushi Shigeta
发明人： Yukiteru Matsui , Gaku Minamihaba , Hiroyuki Yano , Atsushi Shigeta
IPC分类号： H01L21/302
CPC分类号： H01L21/31058 , C09G1/02 , H01L21/31053
摘要： A method of manufacturing a semiconductor device includes depositing a SiO2 film on the substrate having formed thereon a wiring pattern; coating a SOG film on the SiO2 film; and polishing the SOG film using a slurry containing cerium oxide and cationic surfactant with a chemical-mechanical polishing process.
摘要翻译：一种制造半导体器件的方法包括在其上形成有布线图案的基板上沉积SiO 2膜; 在SiO 2膜上涂覆SOG膜; 并使用含有氧化铈和阳离子表面活性剂的浆料通过化学机械抛光方法研磨SOG膜。

9. 发明申请

US20090075487A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090075487A1
公开(公告)日：2009-03-19
申请号：US12208372
申请日：2008-09-11
申请人： Shunsuke Doi , Yukiteru Matsui
发明人： Shunsuke Doi , Yukiteru Matsui
IPC分类号： H01L21/31
CPC分类号： H01L21/31053 , H01L21/76229
摘要： Disclosed is a method of manufacturing a semiconductor device, which includes forming an insulating film above a semiconductor substrate having a recess and stopper film formed above the semiconductor substrate excluding the recess, thereby filling the recess with the insulating film, performing a first polishing by polishing the insulating film by means of a chemical mechanical polishing method using a first polishing liquid containing cerium oxide and first anionic surfactant, thereby obtaining a flattened surface, and performing a second polishing by polishing the flattened insulating film using a second polishing liquid containing cerium oxide and a second anionic surfactant having a smaller molecular weight than that of the first anionic surfactant under a polishing condition which differs from that of the first polishing, thereby exposing the stopper film.
摘要翻译：公开了一种制造半导体器件的方法，其包括在半导体衬底上形成绝缘膜，该半导体衬底具有形成在除了凹部之外的半导体衬底之上的凹部和阻挡膜，从而用绝缘膜填充凹部，通过抛光执行第一抛光该绝缘膜通过使用含有氧化铈和第一阴离子表面活性剂的第一研磨液的化学机械研磨法进行化学机械研磨，得到平坦化面，通过使用含有氧化铈的第二研磨液，对平坦化的绝缘膜进行研磨，进行第二次研磨，在与第一研磨不同的抛光条件下，分子量小于第一阴离子表面活性剂的第二阴离子表面活性剂，从而暴露出止动膜。

10. 发明授权

US07435682B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07435682B2
公开(公告)日：2008-10-14
申请号：US11118316
申请日：2005-05-02
申请人： Yukiteru Matsui , Gaku Minamihaba , Atsushi Shigeta , Hiroyuki Yano , Satoko Seta , Hirokazu Kato
发明人： Yukiteru Matsui , Gaku Minamihaba , Atsushi Shigeta , Hiroyuki Yano , Satoko Seta , Hirokazu Kato
IPC分类号： H01L21/302
CPC分类号： G03F7/094 , H01L21/0332 , H01L21/0337 , H01L21/31058 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76811 , H01L21/76813 , H01L21/76825 , H01L21/76835
摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an insulating film above a substrate, forming a recess in the insulating film, successively forming an underlying layer, an immediate layer and a resist film above the insulating film having the recess formed thereon, the underlying layer being formed by a process comprising forming a first organic film above the insulating film, chemically mechanically polishing the first organic film to expose a surface of the insulating film and to remain the first organic film selectively in the recess, and forming a second organic film above the insulating film and above the first organic film, and subjecting the resist film to patterning exposure.
摘要翻译：公开了一种制造半导体器件的方法，包括在衬底上形成绝缘膜，在绝缘膜中形成凹陷，在其上形成有凹部的绝缘膜上依次形成下层，立即层和抗蚀剂膜，通过包括在绝缘膜上形成第一有机膜的方法形成下层，对第一有机膜进行化学机械抛光以暴露绝缘膜的表面，并在第一有机膜中选择性地保留第一有机膜，并形成第二有机膜在绝缘膜之上和第一有机膜之上，并且对抗蚀剂膜进行图案曝光。

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