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1. 发明申请

US20070087475A1 Method and apparatus for peeling surface protective film 失效
标题翻译：剥离表面保护膜的方法和装置
公开(公告)号：US20070087475A1
公开(公告)日：2007-04-19
申请号：US11544189
申请日：2006-10-05
申请人： Masaki Kanazawa , Minoru Ametani , Daisuke Akita , Motoi Nezu
发明人： Masaki Kanazawa , Minoru Ametani , Daisuke Akita , Motoi Nezu
IPC分类号： H01L21/00
CPC分类号： H01L21/6835 , B29C63/0013 , H01L21/67103 , H01L21/67132 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/6839 , H01L2221/68395 , Y10S438/976 , Y10S438/977
摘要： A method and an apparatus for peeling a surface protective film attached on the surface of a semiconductor wafer are provided. A heating block is set in proximity to the whole surface of the semiconductor wafer, and the whole surface protective film is heated by the heating block. Thus, the air bubbles existing between the semiconductor wafer and the surface protective film are expanded or swelled, and the adhesion between the semiconductor wafer and the surface protective film is weakened. After that, the surface protective film is peeled from the semiconductor wafer. As a result, a peel starting point can be appropriately formed and damage to the wafer can be prevented.
摘要翻译：提供了一种用于剥离附着在半导体晶片的表面上的表面保护膜的方法和装置。加热块设置在半导体晶片的整个表面附近，并且整个表面保护膜被加热块加热。因此，存在于半导体晶片和表面保护膜之间的气泡膨胀或膨胀，并且半导体晶片和表面保护膜之间的粘附力减弱。之后，从半导体晶片剥离表面保护膜。结果，可以适当地形成剥离起始点，并且可以防止对晶片的损坏。

2. 发明授权

US07521384B2 Method and apparatus for peeling surface protective film 失效
标题翻译：剥离表面保护膜的方法和装置
公开(公告)号：US07521384B2
公开(公告)日：2009-04-21
申请号：US11544189
申请日：2006-10-05
申请人： Masaki Kanazawa , Minoru Ametani , Daisuke Akita , Motoi Nezu
发明人： Masaki Kanazawa , Minoru Ametani , Daisuke Akita , Motoi Nezu
IPC分类号： H01L21/46 , H01L21/30 , H01L21/78 , H01L21/00
CPC分类号： H01L21/6835 , B29C63/0013 , H01L21/67103 , H01L21/67132 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/6839 , H01L2221/68395 , Y10S438/976 , Y10S438/977
摘要： A method and an apparatus for peeling a surface protective film attached on the surface of a semiconductor wafer are provided. A heating block is set in proximity to the whole surface of the semiconductor wafer, and the whole surface protective film is heated by the heating block. Thus, the air bubbles existing between the semiconductor wafer and the surface protective film are expanded or swelled, and the adhesion between the semiconductor wafer and the surface protective film is weakened. After that, the surface protective film is peeled from the semiconductor wafer. As a result, a peel starting point can be appropriately formed and damage to the wafer can be prevented.
摘要翻译：提供了一种用于剥离附着在半导体晶片的表面上的表面保护膜的方法和装置。加热块设置在半导体晶片的整个表面附近，并且整个表面保护膜被加热块加热。因此，存在于半导体晶片和表面保护膜之间的气泡膨胀或膨胀，并且半导体晶片和表面保护膜之间的粘附力减弱。之后，从半导体晶片剥离表面保护膜。结果，可以适当地形成剥离起始点，并且可以防止对晶片的损坏。

3. 发明申请

US20070105343A1 Method of grinding back surface of semiconductor wafer and semiconductor wafer grinding apparatus 失效
标题翻译：研磨半导体晶片和半导体晶片研磨装置的背面的方法
公开(公告)号：US20070105343A1
公开(公告)日：2007-05-10
申请号：US11590640
申请日：2006-10-30
申请人： Tomoo Hayashi , Motoi Nezu
发明人： Tomoo Hayashi , Motoi Nezu
IPC分类号： H01L21/30
CPC分类号： B24B7/228 , B24B49/02 , B24B49/12 , Y10S438/977
摘要： A semiconductor wafer back-surface grinding method, for grinding a back surface of a semiconductor wafer, an opposed front surface of the semiconductor wafer being adhered to a support base material and being provided with a circuit pattern, including: measuring an initial thickness of the semiconductor wafer before grinding, in a condition where the support base material is adhered to the front surface of the semiconductor wafer; obtaining a cutting depth by subtracting a set final thickness measured after grinding from the initial thickness; and grinding the back surface of the semiconductor wafer, based on the cutting depth.
摘要翻译：一种半导体晶片背面磨削方法，用于研磨半导体晶片的背面，所述半导体晶片的相对的前表面粘附到支撑基材上并具有电路图案，所述电路图案包括：测量所述半导体晶片的初始厚度半导体晶片在研磨之前，其中所述支撑基材粘附到所述半导体晶片的前表面; 通过从初始厚度减去研磨后测得的设定的最终厚度来获得切割深度; 并根据切割深度研磨半导体晶片的背面。

4. 发明授权

US07601615B2 Method of grinding back surface of semiconductor wafer and semiconductor wafer grinding apparatus 失效
标题翻译：研磨半导体晶片和半导体晶片研磨装置的背面的方法
公开(公告)号：US07601615B2
公开(公告)日：2009-10-13
申请号：US11590640
申请日：2006-10-30
申请人： Tomoo Hayashi , Motoi Nezu
发明人： Tomoo Hayashi , Motoi Nezu
IPC分类号： H01L21/30
CPC分类号： B24B7/228 , B24B49/02 , B24B49/12 , Y10S438/977
摘要： A semiconductor wafer back-surface grinding method, for grinding a back surface of a semiconductor wafer, an opposed front surface of the semiconductor wafer being adhered to a support base material and being provided with a circuit pattern, including: measuring an initial thickness of the semiconductor wafer before grinding, in a condition where the support base material is adhered to the front surface of the semiconductor wafer; obtaining a cutting depth by subtracting a set final thickness measured after grinding from the initial thickness; and grinding the back surface of the semiconductor wafer, based on the cutting depth.
摘要翻译：一种半导体晶片背面磨削方法，用于研磨半导体晶片的背面，所述半导体晶片的相对的前表面粘附到支撑基材上并具有电路图案，所述电路图案包括：测量所述半导体晶片的初始厚度半导体晶片在研磨之前，其中所述支撑基材粘附到所述半导体晶片的前表面; 通过从初始厚度减去研磨后测得的设定的最终厚度来获得切割深度; 并根据切割深度研磨半导体晶片的背面。

5. 发明授权

US6039638A Work planarizing method and apparatus 失效
标题翻译：工作平面化方法和装置
公开(公告)号：US6039638A
公开(公告)日：2000-03-21
申请号：US17010
申请日：1998-02-02
申请人： Hitoshi Nagayama , Motoi Nezu
发明人： Hitoshi Nagayama , Motoi Nezu
IPC分类号： B24B37/005 , B24B37/04 , B24B37/30 , H01L21/304 , B24B5/00
CPC分类号： B24B37/102 , B24B37/30 , B24B41/06
摘要： A method and apparatus for planarizing works can adjust an urging force or pressure applied to a work with ease in a short period of time, but also avoid wasteful use of rings. Wafers 100 adhered to a block 110 is made into contact with a lower surface plate 1. An annular ring 5 which encloses the wafers 100 is disposed in the peripheral portion of the block 110. The peripheral portion of the block 110 is pressed by a head 4 through an annular ring 5. Simultaneous with this, by rotating the lower surface plate 1 while pressing the central portion of the block 110 at a desired pressure by means of a center-pressing member 6 provided on the head 4, the wafers 100 are planarized. Preferably, the center-pressing member 6 includes a pressure chamber 7 formed in the central portion of the head 4, a pressing plate 8 mounted in an opening of the pressure chamber 7 for movement relative thereto so that it can project from the opening to thereby press the central portion of the block 110, and an air pump 9 for controlling the air pressure in the pressure chamber 7.
摘要翻译：用于平坦化工作的方法和装置可以在短时间内容易地调节施加到工件上的推动力或压力，而且还避免浪费使用环。与块体110粘附的晶片100与下表面板1接触。封闭晶片100的环形环5设置在块110的周边部分中。块110的周边部分被头部与此同时，通过旋转下表面板1，同时通过设置在头部4上的中心按压构件6，在期望的压力下按压块110的中心部分，晶片100是平面化优选地，中心按压部件6包括形成在头部4的中心部分的压力室7，安装在压力室7的开口中以相对于其移动的压板8，使得其能够从开口突出按压块110的中心部分，以及用于控制压力室7中的空气压力的空气泵9。

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