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1. 发明授权

US4375517A Sintered cubic boron nitride and process for producing the same 失效
标题翻译：烧结立方氮化硼及其制造方法
公开(公告)号：US4375517A
公开(公告)日：1983-03-01
申请号：US279141
申请日：1981-06-30
申请人： Masakazu Watanabe , Akiyasu Okuno , Isamu Fukuura , Yasushi Matsuo
发明人： Masakazu Watanabe , Akiyasu Okuno , Isamu Fukuura , Yasushi Matsuo
IPC分类号： C22C1/05 , B01J3/06 , C04B35/5831 , C22C26/00 , C22C29/02 , C22C29/04 , C22C29/16 , C04B35/56 , C04B35/58
CPC分类号： C04B35/5831 , B01J3/062 , C22C26/00 , B01J2203/0645 , B01J2203/066 , B01J2203/0685 , C22C2026/005
摘要： Sintered cubic boron nitride consisting of 80 to 20% by volume of the following component (a), with the balance being essentially the following component (b), and a process for producing such nitride are disclosed:(a) cubic boron nitride;(b) a cermet containing the following sub-components (1), (2) and (3):(1) TiC and/or TiC-TiN, part of which may be replaced by a carbide, a nitride, a boride and/or a silicide of a transition metal of the group IVa, Va and VIa of the Periodic Table;(2) Fe, Co and/or Ni; and(3) Mo and/or Mo.sub.2 C.
摘要翻译：由以下组分（a）的80至20体积％的烧结立方氮化硼组成，余量基本上为以下组分（b），以及制备这种氮化物的方法：（a）立方氮化硼; （b）含有以下子组分（1），（2）和（3）的金属陶瓷：（1）TiC和/或TiC-TiN，其一部分可以被碳化物，氮化物，硼化物和或元素周期表IVa，Va和VIa族过渡金属的硅化物; （2）Fe，Co和/或Ni; 和（3）Mo和/或Mo2C。

2. 发明授权

US4668452A Process for producing silicon carbide heating elements 失效
标题翻译：生产碳化硅加热元件的方法
公开(公告)号：US4668452A
公开(公告)日：1987-05-26
申请号：US707257
申请日：1985-03-01
申请人： Masakazu Watanabe , Akiyasu Okuno , Shunkichi Nozaki , Yasushi Matsuo , Isamu Fukuura
发明人： Masakazu Watanabe , Akiyasu Okuno , Shunkichi Nozaki , Yasushi Matsuo , Isamu Fukuura
IPC分类号： C04B35/575 , C04B35/56
CPC分类号： C04B35/5755
摘要： A process for producing a silicon carbide heating element is disclosed comprising: adding boron or a boron compound in an amount corresponding to from 0.3 to 3.0% by weight as boron, and carbon or a carbon compound in an amount corresponding to from 0.1 to 6.0% by weight as carbon, to a SiC powder having an average particle size of 1.0.mu. or less; blending and molding the mixture; conducting a primary sintering in vacuum or in an inert atmosphere, except nitrogen; and thereafter conducting a secondary sintering at from 1500.degree. to 2300.degree. C. in a pressurized nitrogen atmosphere to produce a silicon carbide heating element having a density of at least 80% based on the theoretical density and an electrical resistivity of 1.0 .OMEGA.-cm or less.
摘要翻译：公开了一种制造碳化硅加热元件的方法，其包括：硼或硼化合物的添加量相当于硼原子的0.3〜3.0重量％，碳或碳化合物的添加量相当于0.1〜6.0重量％作为碳的平均粒径为1.0μm以下的SiC粉末; 混合和成型混合物; 在真空或惰性气氛中进行初步烧结，除了氮气; 然后在加压氮气气氛中在1500〜2300℃下进行二次烧结，制成基于理论密度，电阻率为1.0欧姆 - 厘米或以上的密度为至少80％的碳化硅加热元件减。

3. 发明授权

US4336216A Process for producing silicon carbide heating elements 失效
标题翻译：生产碳化硅加热元件的方法
公开(公告)号：US4336216A
公开(公告)日：1982-06-22
申请号：US157738
申请日：1980-06-09
申请人： Masakazu Watanabe , Akiyasu Okuno , Yasushi Matsuo
发明人： Masakazu Watanabe , Akiyasu Okuno , Yasushi Matsuo
IPC分类号： C04B35/565 , H05B3/14 , C04B35/56
CPC分类号： C04B35/565
摘要： A process for producing silicon carbide heating elements is described comprising:a primary sintering wherein a mixture including SiC powder, boron or a boron compound, and carbon or a carbon compound in specific proportions, is molded and sintered to obtain a sintered product having from 70 to 95% of the theoretical density; anda secondary sintering wherein the sintered product obtained in the primary sintering is further sintered at each temperature from 1,600.degree. C. to 2,200.degree. C. to obtain a sintered product having a density of at least 80% of the theoretical density and a specific resistivity of not more than 1.0 .OMEGA.-cm.
摘要翻译：描述了一种生产碳化硅加热元件的方法，其包括：一次烧结，其中将包含SiC粉末，硼或硼化合物的混合物以及特定比例的碳或碳化合物模塑并烧结，得到具有70 至95％的理论密度; 和二次烧结，其中在一次烧结中获得的烧结产品在每个温度从1600℃至2200℃进一步烧结，以获得密度为理论密度的至少80％的密度和比电阻率的烧结产品不超过1.0欧米伽-cm。

4. 发明授权

US5601764A Process for making TiC-base/SiC whisker composite ceramic cutting tools 失效
标题翻译：制造TiC基/ SiC晶须复合陶瓷切削工具的工艺
公开(公告)号：US5601764A
公开(公告)日：1997-02-11
申请号：US512636
申请日：1995-08-08
申请人： Junichiro Suzuki , Shoji Sakakibara , Akiyasu Okuno , Masakazu Watanabe
发明人： Junichiro Suzuki , Shoji Sakakibara , Akiyasu Okuno , Masakazu Watanabe
IPC分类号： C04B35/56 , C22C29/10 , C04B35/52
CPC分类号： C04B35/5603 , C04B35/5607 , C04B35/5611 , C04B35/5622 , C04B35/5626 , C04B35/575 , C04B35/58007 , C04B35/58014 , C04B35/58021 , C04B35/58028 , C04B35/58071 , C04B35/58078 , C04B35/645 , C04B35/6455 , C04B35/806 , C04B35/83
摘要： A ceramic cutting tool of a TiC-based sintered body containing 40 wt % or more of TiC, and 5 to 40 wt % of SiC whisker uniformly dispersed in the sintered body, said SiC whisker having a diameter of 0.2-1.5 .mu.m and a length of 1-20 .mu.m. The sintered body may include up to 40 wt % of Al.sub.2 O.sub.3, and may further contain sintering aid.Up to 40% by weight of TiC may be substituted with at least one of Ti, nitrides, oxides and borides of Ti, and solid-solution of said nitrides, oxides and borides of Ti to form a TiC-base composition.The TiC-base composition may be represented by (Ti.sub.a M.sub.b) (C.sub.c N.sub.d O.sub.e B.sub.f).sub.g where: M denotes at least one of transition metal elements of Groups IVa, Va and VIa, except Ti, according to the International Periodic Table; and a+b=1, 0
摘要翻译：包含均匀分散在烧结体中的TiC为40重量％以上且5〜40重量％的SiC晶须的TiC系烧结体的陶瓷切削工具，所述SiC晶须直径为0.2〜1.5μm，长度1-20亩。该烧结体可以包含至多40重量％的Al 2 O 3，并且还可以含有烧结助剂。高达40重量％的TiC可以被Ti的Ti，氮化物，氧化物和硼化物中的至少一种以及Ti的所述氮化物，氧化物和硼化物的固溶体代替，以形成TiC基组合物。 TiC基组合物可以由（TiaMb）（CcNdOeBf）g表示，其中：M表示除了Ti以外的IVa，Va和VIa族中的至少一种过渡金属元素，根据国际周期表; 和a + b = 1,0,0

5. 发明授权

US5439854A TiC-base/SiC whisker composite ceramic cutting tools 失效
标题翻译： TiC基/ SiC晶须复合陶瓷切割工具
公开(公告)号：US5439854A
公开(公告)日：1995-08-08
申请号：US131571
申请日：1993-10-04
申请人： Junichiro Suzuki , Shoji Sakakibara , Akiyasu Okuno , Masakazu Watanabe
发明人： Junichiro Suzuki , Shoji Sakakibara , Akiyasu Okuno , Masakazu Watanabe
IPC分类号： C04B35/56 , C22C29/10
CPC分类号： C04B35/5603 , C04B35/5607 , C04B35/5611 , C04B35/5622 , C04B35/5626 , C04B35/575 , C04B35/58007 , C04B35/58014 , C04B35/58021 , C04B35/58028 , C04B35/58071 , C04B35/58078 , C04B35/645 , C04B35/6455 , C04B35/806 , C04B35/83
摘要： A ceramic cutting tool formed of a TiC-based sintered body contains 40 wt % or more of TiC, and 5 to 40 wt % of SiC whisker uniformly dispersed in the sintered body. The SiC whisker has a diameter of 0.2-1.5 .mu.m and a length of 1-20 .mu.m. The sintered body may contain up to 40 wt % of Al.sub.2 O.sub.3, and further sintering aids. Up to 40% by weight of the TiC may be substituted with at least one of Ti, nitrides, oxides and borides of Ti, and solid-solutions of these nitrides, oxides and borides of Ti to form a TiC-base composition. The TiC base composition may be represented by the formula (Ti.sub.a M.sub.b) (C.sub.c N.sub.d O.sub.e B.sub.f).sub.g, in which M denotes at least one transition metal element of Groups IVa, Va and VIa according to the International Periodic Table, except Ti; and a+b=1, 0
摘要翻译：由TiC系烧结体形成的陶瓷切削工具包含40重量％以上的TiC和5〜40重量％的均匀分散在烧结体中的SiC晶须。 SiC晶须的直径为0.2-1.5μm，长度为1-20μm。该烧结体可含有至多40重量％的Al 2 O 3，以及其它烧结助剂。高达40重量％的TiC可以被Ti的Ti，氮化物，氧化物和硼化物中的至少一种，Ti的这些氮化物，氧化物和硼化物的固溶体代替，以形成TiC基组合物。 TiC基础组合物可以由式（TiaMb）（CcNdOeBf）g表示，其中M表示除了Ti之外，根据国际周期表的至少一种IVa，Va和VIa族的过渡金属元素; 和a + b = 1,0,0

6. 发明授权

US4956317A Whisker-reinforced ceramics 失效
标题翻译：晶须增强陶瓷
公开(公告)号：US4956317A
公开(公告)日：1990-09-11
申请号：US277374
申请日：1988-11-29
申请人： Hitoshi Yokoi , Masakazu Watanabe , Akiyasu Okuno , Satoshi Iio
发明人： Hitoshi Yokoi , Masakazu Watanabe , Akiyasu Okuno , Satoshi Iio
IPC分类号： C04B35/597 , C04B35/80 , C04B35/81
CPC分类号： C04B35/80 , C04B35/597
摘要： Whisker-reinforced ceramics with high fracture toughness and strength consists essentially of 5-40 weight % SiC including SiC whiskers, 1-30 weight % of at least one kind of oxides of elements selected from the group consisting of Al, Sc, Y and rare-earth elements, and the balance being silicon oxynitride constituents, wherein said SiC whiskers are present in an amount of no less than 5 weight % of the total essential constituents.The silicon oxynitride constituents are Si.sub.2 N.sub.2 O or a mixture of silicon nitride and silica (0.83-1.22 by molar ratio), or a mixture of Si.sub.2 N.sub.2 O and said mixture of silicon nitride and silica. Silicon oxynitride and SiC phases are predominant.
摘要翻译：具有高断裂韧性和强度的晶须强化陶瓷基本上由5-40重量％的SiC组成，包括SiC晶须，1-30重量％的至少一种选自Al，Sc，Y和稀土元素的元素氧化物 - 其余元素为氮氧化硅成分，其中所述SiC晶须的含量为不少于基本成分总量的5重量％。氮氧化硅成分是Si 2 N 2 O或氮化硅和二氧化硅的混合物（摩尔比为0.83-1.22），或Si 2 N 2 O与氮化硅和二氧化硅的混合物的混合物。氮氧化硅和SiC相是主要的。

7. 发明授权

US4695517A Composite layer aluminum nitride base sintered body 失效
标题翻译：复合层氮化铝基体烧结体
公开(公告)号：US4695517A
公开(公告)日：1987-09-22
申请号：US869792
申请日：1986-06-02
申请人： Akiyasu Okuno , Masakazu Watanabe , Kazuhiko Ikoma
发明人： Akiyasu Okuno , Masakazu Watanabe , Kazuhiko Ikoma
IPC分类号： C04B35/581 , C04B37/00 , C04B37/02 , C04B41/50 , C04B41/52 , C04B41/87 , C04B41/89 , H01L23/15 , H05K1/09 , C04B35/58 , F27D7/06
CPC分类号： C04B41/89 , C04B35/00 , C04B35/581 , C04B35/6365 , C04B37/005 , C04B37/006 , C04B37/025 , C04B37/026 , C04B41/5053 , C04B41/52 , C04B41/87 , H01L23/15 , C04B2235/465 , C04B2235/5436 , C04B2235/5445 , C04B2235/6567 , C04B2235/658 , C04B2237/08 , C04B2237/083 , C04B2237/09 , C04B2237/122 , C04B2237/123 , C04B2237/125 , C04B2237/126 , C04B2237/366 , C04B2237/405 , C04B2237/55 , C04B2237/592 , C04B2237/597 , C04B2237/704 , C04B2237/708 , C04B2237/72 , H01L2924/0002 , H05K1/092
摘要： A composite layer aluminum nitride-base sintered body has on at least one surface of AlN-base sintered body having a first layer and a second layer. The first layer is 100 parts by weight of at least one component selected from the group consisting of W, Mo, borides thereof and carbides thereof as a first component(s), and 0.1-50 parts by weight of AlN second component. The second layer has at least one component selected from the group consisting of W, Mo, borides thereof and carbides thereof. The thickness of said first layer is 0.5-40 .mu.m, and the sum of thickness of the first and second layers is 1-50 .mu.m. The AlN may also include sintering aids of oxides of rare earth metal and alkaline earth metals. Hydrides and oxides of Ti, Zr, Nb, V and Mn may be included in the first layer composition.
摘要翻译：复合层状氮化铝基烧结体在具有第一层和第二层的AlN基烧结体的至少一个表面上具有。第一层为100重量份的选自W，Mo，硼化物和其碳化物作为第一组分的至少一种组分和0.1-50重量份的AlN第二组分。第二层具有选自W，Mo，硼化物和碳化物中的至少一种成分。所述第一层的厚度为0.5〜40μm，第一层和第二层的厚度之和为1-50μm。 AlN还可以包括稀土金属和碱土金属的氧化物的烧结助剂。 Ti，Zr，Nb，V和Mn的氢化物和氧化物可以包含在第一层组合物中。

8. 发明授权

US4946807A Composite ceramic material reinforced with silicon carbide whiskers 失效
标题翻译：用碳化硅晶须增强的复合陶瓷材料
公开(公告)号：US4946807A
公开(公告)日：1990-08-07
申请号：US86455
申请日：1987-08-18
申请人： Akiyasu Okuno , Masakazu Watanabe
发明人： Akiyasu Okuno , Masakazu Watanabe
IPC分类号： C04B35/597 , C04B35/80
CPC分类号： C04B35/597 , C04B35/80
摘要： A composite ceramic material reinforced with silicon carbide whiskers consists essentially of 5 to 45% by weight of SiC whiskers, 3 to 20% by weight of at least one selected from the group consisting of oxides and oxynitrides of zirconium calculated on zirconium, and the balance being a SiZlON-based ceramic substance. The SiAlON-based ceramic substance consists essentially of a substance selected from the group consisting of .beta.-SiAlON represented by a compositional formula of Si.sub.6-z Al.sub.z O.sub.z N.sub.8-z (where 0
摘要翻译：用碳化硅晶须增强的复合陶瓷材料基本上由5至45重量％的SiC晶须组成，3至20重量％的选自由锆计算的氧化物和氧氮化物中的至少一种，余量是一种基于SiZlON的陶瓷物质。基于SiAlON的陶瓷物质基本上由选自由Si6-zAlzOzN8-z（其中0

9. 发明授权

US4760312A Dense silicon carbide microwave absorber for electron linear accelerator 失效
标题翻译：电子线性加速器的密集碳化硅微波吸收体
公开(公告)号：US4760312A
公开(公告)日：1988-07-26
申请号：US826463
申请日：1986-02-05
申请人： Masakazu Watanabe , Akiyasu Okuno
发明人： Masakazu Watanabe , Akiyasu Okuno
IPC分类号： H01P1/22 , H01J23/30 , H01P1/26 , H01Q17/00 , H05H7/00 , H05K9/00
CPC分类号： H01J23/30 , H01P1/26
摘要： A microwave absorber composed of dense silicon carbide having an electrical resistivity of one ohm-centimeter or more. In an electron linear accelerator, it is necessary to provide a microwave absorber to absorb excess energy used to accelerate electrons and discharge this excess energy in the form of heat in order for the accelerator to operate safely. The important characteristics are high-frequency wave absorption, good heat resistance, good thermal conductivity, and stability in a vacuum. The invention meets these requirements with a microwave absorber composed of dense silicon carbide. In an electron linear accelerator the absorber is attached to the end portion of an accelerator guide or a branch portion of a power divider to absorb unnecessary wave energy. Such a microwave absorber is found to have characteristics rendering it highly suitable for this application as well as others.
摘要翻译：由具有1欧姆厘米或更大的电阻率的致密碳化硅构成的微波吸收体。在电子线性加速器中，需要提供一种微波吸收器，以吸收用于加速电子的过量能量，并且以热的形式排放多余的能量，以使加速器安全地运行。重要的特点是高频吸波，耐热性好，导热性好，真空稳定性好。本发明利用由致密碳化硅组成的微波吸收器来满足这些要求。在电子线性加速器中，吸收器附着到加速器引导件的端部或功率分配器的分支部分以吸收不必要的波能量。发现这种微波吸收器具有使其非常适合于该应用以及其它应用的特征。

10. 发明授权

US4701426A Silicon carbide-graphite composite material 失效
标题翻译：碳化硅 - 石墨复合材料
公开(公告)号：US4701426A
公开(公告)日：1987-10-20
申请号：US701837
申请日：1985-02-14
申请人： Akiyasu Okuno , Masakazu Watanabe
发明人： Akiyasu Okuno , Masakazu Watanabe
IPC分类号： C04B35/565 , F16J15/34 , C04B35/56
CPC分类号： F16J15/3496 , C04B35/565
摘要： A silicon carbide-graphite composite material is disclosed. The composite material includes graphite as a secondary phase which is segregated along the grain boundaries of all the silicon carbide grains. The graphite has an average grain size of not more than 3 .mu.m and is present in a proportion of 1 to 20 vol % based on the volume of the silicon carbide. The composite material has a density greater than 90% of the theoretical density. The composite material is a high density and high strength material.
摘要翻译：公开了一种碳化硅 - 石墨复合材料。复合材料包括沿着所有碳化硅晶粒的晶界偏析的二次相的石墨。石墨的平均粒径不大于3μm，以碳化硅的体积计为1〜20体积％。复合材料的密度大于理论密度的90％。复合材料是高密度和高强度材料。

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