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1. 发明授权

US5144147A Ion implantation apparatus and method of cleaning the same 失效
标题翻译：离子植入装置及其清洗方法
公开(公告)号：US5144147A
公开(公告)日：1992-09-01
申请号：US750949
申请日：1991-08-28
申请人： Masakazu Shiozaki , Katsuya Okumura
发明人： Masakazu Shiozaki , Katsuya Okumura
IPC分类号： C23C14/48 , C23G5/00 , H01J37/02 , H01J37/16 , H01J37/18 , H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01J37/02 , H01J2237/006 , H01J2237/022
摘要： The present invention is directed to the cleaning of an ion implantation apparatus. The ion implantation apparatus of the present invention comprises a sample holder 21 and a gauge 23 acting as a passageway of an ion beam running toward a sample held by the sample holder. The gauge is provided with a gas inlet port 25 for introducing a reactive gas into the ion beam passageway. The reactive gas collides against the ion beam within the ion beam passageway so as to be ionized. The ionized reactive permits removing a stain attached to the ion implantation apparatus. If the ion implantation apparatus further comprises a bias source 26 for applying voltage of a desired polarity to the gauge, the cleaning can be performed more efficiently.

2. 发明授权

US4682204A Fuse element for integrated circuit memory device 失效
标题翻译：集成电路存储器件的保险丝元件
公开(公告)号：US4682204A
公开(公告)日：1987-07-21
申请号：US807128
申请日：1985-12-11
申请人： Masakazu Shiozaki , Hidetaro Nishimura
发明人： Masakazu Shiozaki , Hidetaro Nishimura
IPC分类号： G11C17/06 , G11C17/14 , G11C17/16 , H01L23/525 , H01L27/02 , H01L23/48 , H01L29/06
CPC分类号： H01L23/5256 , G11C17/16 , H01L2924/0002
摘要： A fuse element prepared from, for example, polycrystalline silicon is deposited on an insulating layer provided on the main surface of a semiconductor substrate in which an IC memory is formed. Connecting portions are integrally formed at both ends of the melting away portion of the fuse element. Each of the connecting portions has a stepped surface having stepped sections. The stepped surface is tightly contacted with a stepped surface having stepped sections formed on the insulating layer.
摘要翻译：从例如多晶硅制备的熔丝元件沉积在形成IC存储器的半导体衬底的主表面上的绝缘层上。连接部分一体地形成在熔丝元件的熔化部分的两端。每个连接部分都具有台阶部分。台阶表面与形成在绝缘层上的阶梯部分的台阶表面紧密接触。

3. 发明授权

US4532401A Apparatus and method for cutting a wiring pattern 失效
标题翻译：用于切割布线图案的装置和方法
公开(公告)号：US4532401A
公开(公告)日：1985-07-30
申请号：US480382
申请日：1983-03-30
申请人： Masakazu Shiozaki , Hidetaro Nishimura
发明人： Masakazu Shiozaki , Hidetaro Nishimura
IPC分类号： H01L21/3205 , B23K26/00 , B23K26/12 , B23K26/36 , H01L21/82
CPC分类号： B23K26/123 , B23K26/1224 , B23K26/362
摘要： An apparatus for cutting a faulty spot or area of a predetermined wiring pattern by radiating a laser beam and which includes a reset table in which a wafer chip is fixed in place on a support table. A radiating device is disposed above the rest table to permit the laser beam to be directed at the wiring pattern. A positioning device is connected to the radiating device to position the laser beam. Between the radiating device and the support table a cover is disposed to define a hermetically-sealed space including the wafer chip. A hole of the cover is coupled to a vacuum pump. After the space is placed in a vacuum the laser beam is radiated toward the wiring pattern to permit the portion of the wiring pattern to be cut.
摘要翻译：一种用于通过照射激光束来切割预定布线图案的故障点或区域的装置，其包括其中晶片芯片固定在支撑台上的复位台。辐射装置设置在静止台上方，以允许激光束被引导到布线图案。定位装置连接到辐射装置以定位激光束。在辐射装置和支撑台之间设置盖子以限定包括晶片芯片的气密密封空间。盖的孔与真空泵相连。在将空间放置在真空中之后，将激光束朝向布线图案辐射，以允许切割布线图案的部分。

4. 发明授权

US5179433A Breakdown evaluating test element 失效
标题翻译：故障评估测试元件
公开(公告)号：US5179433A
公开(公告)日：1993-01-12
申请号：US713981
申请日：1991-06-12
申请人： Hisanori Misawa , Masakazu Shiozaki
发明人： Hisanori Misawa , Masakazu Shiozaki
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： G01R31/261
摘要： A breakdown evaluating test element insert an oxide film having thin thick portion and formed on a silicon wafer and a polysilicon film formed on the oxide film, in such a way that a capacitor is formed between the silicon wafer and the polysilicon film with the oxide film as dielectric. The area of the polysilicon film is made larger than that of the thin portion of the oxide film so that only the thin portion thereof is brought into breakdown at a predetermined probability by an electric field strength generated at the thin portion when an electric field is applied to the wafer and when no electron shower is used (no breakdown prevention countermeasure is taken) during ion implantation, for instance. Therefore, the effect of the electron shower can be confirmed by checking the resistivity of the thin oxide film portion after the wafer has been ion-implanted by using an electron shower.
摘要翻译：击穿评估测试元件插入形成在硅晶片上的薄厚氧化膜和形成在氧化膜上的多晶硅膜，使得在硅晶片和多晶硅膜之间形成电容器，氧化膜作为电介质。使多晶硅膜的面积比氧化膜的薄部的面积大，使得当施加电场时，在薄部分产生的电场强度只有其薄的部分以预定的概率被击穿例如在离子注入期间，不使用电子淋浴（没有防止击穿的对策）。因此，可以通过使用电子淋浴器在离子注入晶片之后检查薄氧化膜部分的电阻率来确认电子淋浴的效果。

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