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1. 发明申请

US20120199822A1 ORGANIC TRANSISTOR 审中-公开
标题翻译：有机晶体管
公开(公告)号：US20120199822A1
公开(公告)日：2012-08-09
申请号：US13501079
申请日：2010-10-19
申请人： Masakazu Kamura , Shigeru Aomori , Yasutaka Kuzumoto
发明人： Masakazu Kamura , Shigeru Aomori , Yasutaka Kuzumoto
IPC分类号： H01L51/10
CPC分类号： H01L51/105 , H01L51/0545
摘要： An organic transistor (1) includes: an injection improvement layer (40) between a source electrode (14) and an organic semiconductor layer (16); and an extraction improvement layer (50) between a drain electrode (15) and the organic semiconductor layer (16). An electric dipole moment of a material or molecules of the extraction improvement layer (50) has an absolute value lager than that of the injection improvement layer (40). Accordingly, all carriers in the organic semiconductor, which are injected from the source electrode during operation of the transistor, can be drawn out (extracted) into the drain electrode. This reduce contact resistances. Therefore, provided are the organic transistor that reduces a contact resistance between the organic semiconductor layer and the source electrode and a contact resistance between the organic semiconductor layer and the drain electrode and attains to demonstrate stable operation, and a method for fabricating the organic transistor.
摘要翻译：有机晶体管（1）包括：在源电极（14）和有机半导体层（16）之间的注入改进层（40）; 以及在漏电极（15）和有机半导体层（16）之间的提取改进层（50）。提取改善层（50）的材料或分子的电偶极矩的绝对值大于注入改进层（40）的绝对值。因此，可以将在晶体管工作期间从源电极注入的有机半导体中的所有载流子拉出（提取）到漏电极中。这降低了接触电阻。因此，提供了降低有机半导体层与源电极之间的接触电阻的有机晶体管和有机半导体层与漏电极之间的接触电阻，并且实现了稳定的操作，以及制造有机晶体管的方法。

2. 发明申请

US20120132991A1 ORGANIC THIN-FILM TRANSISTOR, AND PROCESS FOR PRODUCTION THEREOF 审中-公开
标题翻译：有机薄膜晶体管及其生产工艺
公开(公告)号：US20120132991A1
公开(公告)日：2012-05-31
申请号：US13389235
申请日：2010-09-02
申请人： Yasutaka Kuzumoto , Shigeru Aomori , Masakazu Kamura
发明人： Yasutaka Kuzumoto , Shigeru Aomori , Masakazu Kamura
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/105 , H01L51/0541 , H01L51/0562
摘要： An organic thin-film transistor (100) includes, on a substrate (1), a gate electrode (2), a gate insulating layer (3), a source electrode (4), and a drain electrode (5). Part of surface of the source electrode (4) is covered by a first organic molecular layer (6a). Part of surface of the drain electrode (5) is covered by a second organic molecular layer (6b). An organic semiconductor layer (7) is formed so as to cover the organic molecular layer (6) (first and second organic molecular layers (6a, 6b)), the source electrode (4), and the drain electrode (5), and get into a channel section (20) which is a gap between the electrodes. Since the organic thin-film transistor (100) has the organic molecular layer (6) covering at least part of surface of each of the source and drain electrodes (4, 5), hole-electron injection efficiency is increased. This makes it possible to obtain large current.
摘要翻译：有机薄膜晶体管（100）在基板（1）上包括栅极（2），栅极绝缘层（3），源电极（4）和漏极（5）。源电极（4）的表面的一部分被第一有机分子层（6a）覆盖。漏电极（5）的表面的一部分被第二有机分子层（6b）覆盖。形成有机半导体层（7），以覆盖有机分子层（6）（第一和第二有机分子层（6a，6b）），源电极（4）和漏电极（5），以及进入作为电极之间的间隙的通道部分（20）。由于有机薄膜晶体管（100）具有覆盖源极和漏极（4,5）中的每一个的表面的至少一部分的有机分子层（6），空穴电子注入效率提高。这使得可以获得大电流。

3. 发明申请

US20100237337A1 ORGANIC TRANSISTOR AND METHOD FOR PRODUCING THE SAME 失效
标题翻译：有机晶体管及其制造方法
公开(公告)号：US20100237337A1
公开(公告)日：2010-09-23
申请号：US12680413
申请日：2008-09-19
申请人： Masakazu Kamura , Shigeru Aomori , Yasutaka Kuzumoto
发明人： Masakazu Kamura , Shigeru Aomori , Yasutaka Kuzumoto
IPC分类号： H01L51/30 , H01L51/10 , H01L51/40
CPC分类号： H01L51/052 , H01L51/0533 , H01L51/0545
摘要： An organic transistor comprising:at least a gate electrode and a gate insulating layer formed on the gate electrode,the gate insulating layer including, on a surface of the gate electrode, a stacked molecular film composed ofa first organic molecular layer binding in a direction substantially perpendicular to the surface of the gate electrode through a first covalent bond anda second organic molecular layer binding to an unreacted end of the first organic molecular layer through a second covalent bond, whereinthe second covalent bond and another second covalent bond adjacent to each other form a hydrogen bond in a direction of a surface perpendicular to a major axis direction of the stacked molecule.
摘要翻译：一种有机晶体管，包括：至少栅电极和栅极绝缘层，形成在所述栅电极上，所述栅极绝缘层包括在所述栅电极的表面上的层叠分子膜，所述层叠分子膜由在第一有机分子层通过第一共价键基本上垂直于栅电极的表面，以及通过第二共价键与第一有机分子层的未反应端结合的第二有机分子层，其中第二共价键和与每个共价键相邻的另一个第二共价键另一个在垂直于堆叠分子的长轴方向的表面的方向上形成氢键。

4. 发明申请

US20120181538A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120181538A1
公开(公告)日：2012-07-19
申请号：US13497240
申请日：2010-10-19
申请人： Masakazu Kamura , Shigeru Aomori , Yasutaka Kuzumoto
发明人： Masakazu Kamura , Shigeru Aomori , Yasutaka Kuzumoto
IPC分类号： H01L29/786 , H01L21/20
CPC分类号： H01L51/105 , H01L27/283 , H01L51/0545
摘要： A semiconductor device (1a) which is constituted by organic semiconductors with excellent transistor characteristics and includes: a p-type organic transistor (P1) having a gate electrode (12), a source electrode (14), a drain electrode (15), and a p-type organic semiconductor layer (16); an n-type organic transistor (N1) electrically connected with the p-type organic transistor (P1) and having a gate electrode (22), a source electrode (24), a drain electrode (25), and an n-type organic semiconductor layer (26); first layers for enhancing electric charge transfer, one of the first layers being provided between the source electrode (14) and the organic semiconductor layer (16), the other of the first layers being provided between the drain electrode (25) and the organic semiconductor (26); and second layers for enhancing electric charge transfer and made from a different material from that of the first layers, one of the second layers being provided between the drain electrode (15) and the organic semiconductor layer (16), the other of the second layers being provided between the source electrode (24) and the organic semiconductor layer (26), all of the source electrodes and the drain electrodes being made from a same electrode material.
摘要翻译：一种半导体器件（1a），由具有优异晶体管特性的有机半导体构成，包括：具有栅电极的p型有机晶体管（P1），源电极（14），漏电极（15），和p型有机半导体层（16）; 与p型有机晶体管（P1）电连接并具有栅电极（22），源电极（24），漏极（25）和n型有机晶体管的n型有机晶体管（N1）半导体层（26）; 用于增强电荷转移的第一层，第一层之一设置在源电极（14）和有机半导体层（16）之间，另一个第一层设置在漏电极（25）和有机半导体（26）; 以及用于增强电荷转移并由不同于第一层的材料制成的第二层，其中一个第二层设置在漏电极（15）和有机半导体层（16）之间，另一个第二层设置在源电极（24）和有机半导体层（26）之间，所有源电极和漏电极均由相同的电极材料制成。

5. 发明授权

US08178871B2 Organic transistor and method for producing the same 失效
标题翻译：有机晶体管及其制造方法
公开(公告)号：US08178871B2
公开(公告)日：2012-05-15
申请号：US12680413
申请日：2008-09-19
申请人： Masakazu Kamura , Shigeru Aomori , Yasutaka Kuzumoto
发明人： Masakazu Kamura , Shigeru Aomori , Yasutaka Kuzumoto
IPC分类号： H01L29/08
CPC分类号： H01L51/052 , H01L51/0533 , H01L51/0545
摘要： An organic transistor comprising: at least a gate electrode and a gate insulating layer formed on the gate electrode, the gate insulating layer including, on a surface of the gate electrode, a stacked molecular film composed of a first organic molecular layer binding in a direction substantially perpendicular to the surface of the gate electrode through a first covalent bond and a second organic molecular layer binding to an unreacted end of the first organic molecular layer through a second covalent bond, wherein the second covalent bond and another second covalent bond adjacent to each other form a hydrogen bond in a direction of a surface perpendicular to a major axis direction of the stacked molecule.
摘要翻译：一种有机晶体管，包括：至少栅电极和栅极绝缘层，形成在所述栅电极上，所述栅极绝缘层包括在所述栅电极的表面上的层叠分子膜，所述层叠分子膜由在第一有机分子层通过第一共价键基本上垂直于栅电极的表面，以及通过第二共价键与第一有机分子层的未反应端结合的第二有机分子层，其中第二共价键和与每个共价键相邻的另一个第二共价键另一个在垂直于堆叠分子的长轴方向的表面的方向上形成氢键。

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