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1. 发明授权

US08071456B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08071456B2
公开(公告)日：2011-12-06
申请号：US12870611
申请日：2010-08-27
申请人： Masahiro Moniwa , Fumihiko Nitta , Masamichi Matsuoka , Satoshi Iida
发明人： Masahiro Moniwa , Fumihiko Nitta , Masamichi Matsuoka , Satoshi Iida
IPC分类号： H01L21/20
CPC分类号： H01L45/144 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： Any of a plurality of contact plugs which reaches a diffusion layer serving as a drain layer of an MOS transistor has an end provided in contact with a lower surface of a thin insulating film provided selectively on an interlayer insulating film. A phase change film constituted by GST to be a chalcogenide compound based phase change material is provided on the thin insulating film, and an upper electrode is provided thereon. Any of the plurality of contact plugs which reaches the diffusion layer serving as a source layer has an end connected directly to an end of a contact plug penetrating an interlayer insulating film.
摘要翻译：到达用作MOS晶体管的漏极层的扩散层的多个接触插塞中的任一个具有与选择性地设置在层间绝缘膜上的薄绝缘膜的下表面接触的端部。在该薄绝缘膜上设置由作为硫属化合物系的相变材料的GST构成的相变膜，在其上设置有上部电极。到达用作源层的扩散层的多个接触插塞中的任何一个直接连接到穿过层间绝缘膜的接触插塞的端部的端部。

2. 发明申请

US20100323491A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100323491A1
公开(公告)日：2010-12-23
申请号：US12870611
申请日：2010-08-27
申请人： Masahiro MONIWA , Fumihiko Nitta , Masamichi Matsuoka , Satoshi Iida
发明人： Masahiro MONIWA , Fumihiko Nitta , Masamichi Matsuoka , Satoshi Iida
IPC分类号： H01L21/02
CPC分类号： H01L45/144 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： Any of a plurality of contact plugs which reaches a diffusion layer serving as a drain layer of an MOS transistor has an end provided in contact with a lower surface of a thin insulating film provided selectively on an interlayer insulating film. A phase change film constituted by GST to be a chalcogenide compound based phase change material is provided on the thin insulating film, and an upper electrode is provided thereon. Any of the plurality of contact plugs which reaches the diffusion layer serving as a source layer has an end connected directly to an end of a contact plug penetrating an interlayer insulating film.
摘要翻译：到达用作MOS晶体管的漏极层的扩散层的多个接触插塞中的任一个具有与选择性地设置在层间绝缘膜上的薄绝缘膜的下表面接触的端部。在该薄绝缘膜上设置由作为硫属化合物系的相变材料的GST构成的相变膜，在其上设置有上部电极。到达用作源层的扩散层的多个接触插塞中的任何一个直接连接到穿过层间绝缘膜的接触插塞的端部的端部。

3. 发明授权

US08338817B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08338817B2
公开(公告)日：2012-12-25
申请号：US13278918
申请日：2011-10-21
申请人： Masahiro Moniwa , Fumihiko Nitta , Masamichi Matsuoka , Satoshi Iida
发明人： Masahiro Moniwa , Fumihiko Nitta , Masamichi Matsuoka , Satoshi Iida
IPC分类号： H01L47/00
CPC分类号： H01L45/144 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： Any of a plurality of contact plugs which reaches a diffusion layer serving as a drain layer of an MOS transistor has an end provided in contact with a lower surface of a thin insulating film provided selectively on an interlayer insulating film. A phase change film constituted by GST to be a chalcogenide compound based phase change material is provided on the thin insulating film, and an upper electrode is provided thereon. Any of the plurality of contact plugs which reaches the diffusion layer serving as a source layer has an end connected directly to an end of a contact plug penetrating an interlayer insulating film.
摘要翻译：到达用作MOS晶体管的漏极层的扩散层的多个接触插塞中的任一个具有与选择性地设置在层间绝缘膜上的薄绝缘膜的下表面接触的端部。在该薄绝缘膜上设置由作为硫属化合物系的相变材料的GST构成的相变膜，在其上设置有上部电极。到达用作源层的扩散层的多个接触插塞中的任何一个直接连接到穿过层间绝缘膜的接触插塞的端部的端部。

4. 发明授权

US07902539B2 Semiconductor device and method of manufacturing the same 失效
公开(公告)号：US07902539B2
公开(公告)日：2011-03-08
申请号：US12274740
申请日：2008-11-20
申请人： Masahiro Moniwa , Fumihiko Nitta , Masamichi Matsuoka , Satoshi Iida
发明人： Masahiro Moniwa , Fumihiko Nitta , Masamichi Matsuoka , Satoshi Iida
IPC分类号： H01L47/00
CPC分类号： H01L45/144 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： Any of a plurality of contact plugs which reaches a diffusion layer serving as a drain layer of an MOS transistor has an end provided in contact with a lower surface of a thin insulating film provided selectively on an interlayer insulating film. A phase change film constituted by GST to be a chalcogenide compound based phase change material is provided on the thin insulating film, and an upper electrode is provided thereon. Any of the plurality of contact plugs which reaches the diffusion layer serving as a source layer has an end connected directly to an end of a contact plug penetrating an interlayer insulating film.

5. 发明申请

US20090140234A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090140234A1
公开(公告)日：2009-06-04
申请号：US12274740
申请日：2008-11-20
申请人： Masahiro Moniwa , Fumihiko Nitta , Masamichi Matsuoka , Satoshi Iida
发明人： Masahiro Moniwa , Fumihiko Nitta , Masamichi Matsuoka , Satoshi Iida
IPC分类号： H01L47/00 , H01L21/44
CPC分类号： H01L45/144 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/12 , H01L45/1233 , H01L45/1675 , H01L2924/0002 , H01L2924/00
摘要： Any of a plurality of contact plugs which reaches a diffusion layer serving as a drain layer of an MOS transistor has an end provided in contact with a lower surface of a thin insulating film provided selectively on an interlayer insulating film. A phase change film constituted by GST to be a chalcogenide compound based phase change material is provided on the thin insulating film, and an upper electrode is provided thereon. Any of the plurality of contact plugs which reaches the diffusion layer serving as a source layer has an end connected directly to an end of a contact plug penetrating an interlayer insulating film.
摘要翻译：到达用作MOS晶体管的漏极层的扩散层的多个接触插塞中的任一个具有与选择性地设置在层间绝缘膜上的薄绝缘膜的下表面接触的端部。在该薄绝缘膜上设置由作为硫属化合物系的相变材料的由GST构成的相变膜，在其上设置上电极。到达用作源层的扩散层的多个接触插塞中的任何一个直接连接到穿过层间绝缘膜的接触插塞的端部的端部。

6. 发明申请

US20110298070A1 Semiconductor Device Having Magnetoresistive Element and Manufacturing Method Thereof 审中-公开
标题翻译：具有磁阻元件的半导体器件及其制造方法
公开(公告)号：US20110298070A1
公开(公告)日：2011-12-08
申请号：US13150968
申请日：2011-06-01
申请人： Shoichi Fukui , Satoshi Iida , Shinroku Maejima , Kazuyuki Omori
发明人： Shoichi Fukui , Satoshi Iida , Shinroku Maejima , Kazuyuki Omori
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08
摘要： A semiconductor device has a magnetoresistive element, a bit line over the magnetoresistive element, and a yoke cover over the bit line. To form the yoke cover, a laminate film is first formed over the bit line, the laminate film having a first barrier metal layer, a magnetic layer, and a second barrier metal layer which are formed successively over the bit line. Then, the laminate film is subjected to: reactive ion etching with a gas mixture of a carbon tetrafluoride (CF4) gas and an argon (Ar) gas, reactive ion etching with a gas mixture of carbon monoxide (CO), an ammonia (NH3) gas, and an argon (Ar) gas, and reactive ion etching with a gas mixture of a carbon tetrafluoride (CF4) gas and an argon (Ar) gas.
摘要翻译：半导体器件具有磁阻元件，磁阻元件上的位线和位线上的磁轭盖。为了形成轭盖，首先在位线上形成层压膜，层压膜具有在位线上连续形成的第一阻挡金属层，磁性层和第二阻挡金属层。然后，利用四氟化碳（CF 4）气体和氩气（Ar）气体的气体混合物对层压膜进行反应离子蚀刻，用一氧化碳（CO），氨（NH 3）的气体混合物进行反应离子蚀刻）气体和氩（Ar）气体，以及用四氟化碳（CF 4）气体和氩气（Ar）气体的气体混合物的反应离子蚀刻。

7. 发明授权

US4822965A Lid locking mechanism in automobile switch panel device 失效
标题翻译：汽车开关柜装置中的盖锁定机构
公开(公告)号：US4822965A
公开(公告)日：1989-04-18
申请号：US75507
申请日：1987-07-20
申请人： Yukihiro Hyogo , Kikuo Kimura , Satoshi Iida , Kazuya Arai
发明人： Yukihiro Hyogo , Kikuo Kimura , Satoshi Iida , Kazuya Arai
IPC分类号： B60H1/00 , E05D11/10 , H01H9/28 , H01H13/04
CPC分类号： E05D11/1078 , B60H1/0065 , B60K2350/405 , E05Y2900/20 , E05Y2900/50 , H01H9/287 , Y10T16/540255 , Y10T16/54095
摘要： A lid lock mechanism in an automobile switch panel device. The mechanism includes an open-top case, a switch panel accommodated in said case, a lid to cover the open-top case, pivotal shafts provided in the open-top case, and clutch members provided in a pair of holes in the lid. At a predetermined opening angle, the lid is maintained in a locked condition while the lid is easily closed manually with a force stronger than a predetermined level.
摘要翻译：一种汽车开关面板装置中的盖锁定机构。该机构包括敞开式外壳，容纳在所述壳体中的开关面板，盖顶盖壳体的盖子，设置在敞开式壳体中的枢转轴以及设置在盖子中的一对孔中的离合器构件。在预定的开启角度下，盖子被保持在锁定状态，同时以比预定水平更强的力手动关闭盖子。

8. 发明授权

US5452766A Hydraulic control system for a tractor 失效
标题翻译：拖拉机液压控制系统
公开(公告)号：US5452766A
公开(公告)日：1995-09-26
申请号：US138672
申请日：1993-10-18
申请人： Takeshi Imamura , Satoshi Iida , Seiichi Takahashi
发明人： Takeshi Imamura , Satoshi Iida , Seiichi Takahashi
IPC分类号： A01B63/112
CPC分类号： A01B63/112 , B60G2401/12
摘要： A control system for controlling a hydraulically operable link mechanism mounted on a working vehicle. The link mechanism includes lift arms, a hydraulic actuator for controlling the lift arms, a first and a second lower links each connected at one end thereof to a working implement, and connecting rods interconnecting the lift arms and the first and second lower links, respectively. The control system includes a first coupling for pivotally connecting the first lower link to one side of a vehicle body, a second coupling for pivotally connecting the second lower link to the other side of the vehicle body, strain gauges provided for the first and second couplings, respectively, and a control device for controlling the actuator based on detection signals received from the strain gauges.
摘要翻译：一种用于控制安装在工作车辆上的液压可操作的连杆机构的控制系统。连杆机构包括提升臂，用于控制提升臂的液压致动器，分别在其一端连接到工作工具的第一和第二下部连杆，以及将升降臂与第一和第二下部连杆相互连接的连接杆。所述控制系统包括用于将所述第一下部连杆枢转地连接到车身的一侧的第一联接器，用于将所述第二下部连杆枢转地连接到所述车身的另一侧的第二联接件，用于所述第一和第二联接器以及用于根据从应变计接收到的检测信号来控制致动器的控制装置。

9. 发明授权

US06228755B1 Semiconductor device, and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06228755B1
公开(公告)日：2001-05-08
申请号：US09266853
申请日：1999-03-12
申请人： Yoshihiro Kusumi , Satoshi Iida , Kazunori Yoshikawa
发明人： Yoshihiro Kusumi , Satoshi Iida , Kazunori Yoshikawa
IPC分类号： H01L214763
CPC分类号： H01L21/7681 , H01L21/76804 , H01L21/76807 , H01L21/76808 , H01L21/76813 , H01L23/53295 , H01L2221/1026 , H01L2924/0002 , H01L2924/00
摘要： Described is a semiconductor device having a buried multilayer wiring structure, in which there is ensured good conductivity among a plurality of wiring layers. A lower wiring pattern is formed from conductive material, and an upper wiring pattern is formed from conductive material. Insulating layers are provided between the lower wiring pattern and the upper wiring pattern. A connection section is formed so as to penetrate through the insulating layers to thereby establish continuity between the lower and upper wiring patterns, as well as to have a greater cross-sectional area at the end facing the upper wiring pattern and a smaller cross-sectional area at the end facing the lower wiring pattern.
摘要翻译：描述了具有掩埋多层布线结构的半导体器件，其中确保多个布线层中的良好导电性。由导电材料形成下布线图案，并且由导电材料形成上布线图案。在下布线图案和上布线图案之间设置绝缘层。连接部分形成为穿透绝缘层，从而建立下布线图案和上布线图案之间的连续性，并且在面向上布线图案的端部处具有更大的横截面面积，并且具有较小的横截面面向下方布线图案的一端。

10. 发明授权

US06156639A Method for manufacturing contact structure 失效
标题翻译：制造接触结构的方法
公开(公告)号：US06156639A
公开(公告)日：2000-12-05
申请号：US116340
申请日：1998-07-16
申请人： Tetsuhiro Fukao , Yoshihiro Kusumi , Hiroshi Miyatake , Nobuo Fujiwara , Shigenori Sakamori , Satoshi Iida
发明人： Tetsuhiro Fukao , Yoshihiro Kusumi , Hiroshi Miyatake , Nobuo Fujiwara , Shigenori Sakamori , Satoshi Iida
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522 , H01L23/532 , H01L21/4763
CPC分类号： H01L23/53223 , H01L21/76838 , H01L23/5226 , H01L2924/0002
摘要： Provided are a method for manufacturing contact structure to prevent, in the wire of a borderless structure, erosion in the contact area between the wire and a conductor. An interlayer insulating film (300) having a wire burying hole is formed and a conductor (400) is buried in the hole. Then, a wire layer (500) covering the hole is formed on the interlayer insulating film (300). The wire layer (500) is made so as to have a borderless structure by using a resist (540) as a mask. A barrier metal layer (510) suppresses erosion in the contact area between the conductor (400) and the wire layer (500).
摘要翻译：提供一种用于制造接触结构的方法，以防止无边界结构的电线在导线和导体之间的接触面积中受到侵蚀。形成具有线掩埋孔的层间绝缘膜（300），将导体（400）埋入孔内。然后，在层间绝缘膜（300）上形成覆盖该孔的导线层（500）。通过使用抗蚀剂（540）作为掩模，将导线层（500）制成为具有无边界结构。阻挡金属层（510）抑制导体（400）和导线层（500）之间的接触区域的侵蚀。

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