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1. 发明申请

US20060239321A1 Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20060239321A1
公开(公告)日：2006-10-26
申请号：US11327405
申请日：2006-01-09
申请人： Masahiro Kume , Toshitaka Shimamoto , Isao Kidoguchi , Tomoaki Uno
发明人： Masahiro Kume , Toshitaka Shimamoto , Isao Kidoguchi , Tomoaki Uno
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , B82Y20/00 , G11B7/1275 , G11B2007/0006 , H01S5/028 , H01S5/0287 , H01S5/162 , H01S5/2214 , H01S5/2231 , H01S5/34313 , H01S5/34326 , H01S5/3436 , H01S5/4087
摘要： A semiconductor laser device includes a first semiconductor laser element for emitting a first laser light having a first oscillation wavelength of λ1 and a second semiconductor laser element for emitting a second laser light having a second oscillation wavelength of λ2 (wherein λ2≧λ1), which are formed on a single substrate. A first dielectric film which has a refractive index of n1 with respect to a wavelength λ between the first oscillation wavelength λ1 and the second oscillation wavelength λ2 and has a film thickness of approximately λ/(8n1) is formed at light emitting facets in the first semiconductor laser element and the second semiconductor laser element, from which the laser lights are emitted, and a second dielectric film having a refractive index of n2 and a film thickness of λ/(8n2) are formed on the first dielectric film.
摘要翻译：半导体激光器件包括用于发射具有第一振荡波长λ1的第一激光的第一半导体激光元件和用于发射具有第二振荡波长λ的第二激光元件的第二半导体激光元件其中形成在单个衬底上的第二层（其中λ2

2. 发明申请

US20090232178A1 TWO-WAVELENGTH SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：双波长半导体激光器件
公开(公告)号：US20090232178A1
公开(公告)日：2009-09-17
申请号：US12392469
申请日：2009-02-25
申请人： Koichi HAYAKAWA , Toru Takayama , Masahiro Kume , Tomoya Satoh , Isao Kidoguchi
发明人： Koichi HAYAKAWA , Toru Takayama , Masahiro Kume , Tomoya Satoh , Isao Kidoguchi
IPC分类号： H01S5/327
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/028 , H01S5/1064 , H01S5/2231 , H01S5/3403 , H01S5/3432 , H01S5/34326 , H01S5/4087 , H01S2301/18
摘要： A semiconductor laser device has a first light emitting portion and a second light emitting portion having a longer emission wavelength than that of the first light emitting portion. Each of the first light emitting portion and the second light emitting portion has a stripe-shaped ridge structure used for carrier injection. The ridge structure in the first light emitting portion includes a first front end region having a width Wf1 and having a length L3 from a front facet, a first rear end region having a width Wr1 and having a length L1 from a rear facet, and a first tapered region located between the first front end region and the first rear end region and having a length L2, and the relation of Wf1>Wr1 is satisfied. The ridge structure in the second light emitting portion includes a second front end region having a width Wf2 and having a length L6 from a front facet, a second rear end region having a width Wr2 and having a length L4 from a rear facet, and a second tapered region located between the second front end region and the second rear end region and having a length L5, and the relation of Wf2>Wr2 is satisfied. The relations of L1+L2+L3=L4+L5+L6, Wf1 L4 are also satisfied.
摘要翻译：半导体激光装置具有比第一发光部的发光波长长的第一发光部和第二发光部。第一发光部分和第二发光部分中的每一个具有用于载体注入的条形脊结构。第一发光部的脊结构具有第一前端区域，具有宽度Wf1并且具有来自前端面的长度L3，具有宽度Wr1的第一后端区域和具有来自后面的长度L1的第一前端区域，以及位于第一前端区域和第一后端区域之间并且具有长度L2的第一锥形区域，并且满足Wf1> Wr1的关系。第二发光部的脊部结构包括具有宽度Wf2的第二前端区域，具有来自前端面的长度L6，具有宽度Wr2的第二后端区域，并且具有来自后面的长度L4，位于第二前端区域和第二后端区域之间并且具有长度L5的第二锥形区域，并且满足Wf2> Wr2的关系。还满足L1 + L2 + L3 = L4 + L5 + L6，Wf1 L4的关系。

3. 发明授权

US06165812A Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor 失效
标题翻译：氮化镓化合物半导体发光器件及其制造方法
公开(公告)号：US06165812A
公开(公告)日：2000-12-26
申请号：US913659
申请日：1997-09-19
申请人： Akihiko Ishibashi , Yuuzaburou Ban , Hidemi Takeisi , Nobuyuki Uemura , Masahiro Kume , Isao Kidoguchi
发明人： Akihiko Ishibashi , Yuuzaburou Ban , Hidemi Takeisi , Nobuyuki Uemura , Masahiro Kume , Isao Kidoguchi
IPC分类号： C30B25/02 , H01L33/00 , H01L33/32 , H01L21/00
CPC分类号： H01L33/32 , C30B25/02 , C30B29/406 , H01L33/007
摘要： The method for producing gallium nitride group compound semiconductor includes the steps of: forming a polycrystalline nitride layer 11a in a first temperature range on a substrate 10; forming a nucleus layer 11b of gallium nitride single crystals in a second temperature range on the polycrystalline nitride layer 11a; growing the nucleus layer 11b of gallium nitride single crystals in a third temperature range such that resulting crystals of the nucleus layer 11b of gallium nitride single crystals come into contact with each other in a direction parallel to a surface of the substrate 10; and growing the nucleus layer 11b of gallium nitride single crystals in a fourth temperature range in a direction vertical to the surface of the substrate 10.
摘要翻译： PCT No.PCT / JP97 / 00056 Sec。 371 1999年9月19日第 102（e）1999年9月19日PCT PCT 1997年1月14日PCT公布。公开号WO97 / 26680 日期1997年7月24日制造氮化镓基化合物半导体的方法包括以下步骤：在基板10上形成第一温度范围内的多晶氮化物层11a; 在第二温度范围内在多晶氮化物层11a上形成氮化镓单晶的核层11b; 在第三温度范围内生长氮化镓单晶的核层11b，使得氮化镓单晶的核层11b的晶体在平行于衬底10的表面的方向上彼此接触; 并且在与衬底10的表面垂直的方向上的第四温度范围内生长氮化镓单晶的核层11b。

4. 发明申请

US20090074022A1 DUAL-WAVELENGTH SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：双波长半导体激光器件及其制造方法
公开(公告)号：US20090074022A1
公开(公告)日：2009-03-19
申请号：US12166703
申请日：2008-07-02
申请人： Masahiro Kume , Toru Takayama , Shouichi Takasuka , Isao Kidoguchi
发明人： Masahiro Kume , Toru Takayama , Shouichi Takasuka , Isao Kidoguchi
IPC分类号： H01S5/026
CPC分类号： H01S5/4031 , H01S5/162 , H01S5/209 , H01S5/22 , H01S5/4087
摘要： In a dual-wavelength semiconductor laser in which a first semiconductor laser element and a second semiconductor laser element are integrated onto a substrate made of a compound semiconductor, a constituent material of an etching stopper of the first semiconductor laser element is a material which allows diffusion of impurities less easily than a constituent material of an etching stopper of the second semiconductor laser element.
摘要翻译：在其中将第一半导体激光元件和第二半导体激光元件集成到由化合物半导体制成的基板上的双波长半导体激光器中，第一半导体激光元件的蚀刻阻挡层的构成材料是允许扩散的材料的杂质比第二半导体激光元件的蚀刻停止体的构成材料容易。

5. 发明授权

US07212556B1 Semiconductor laser device optical disk apparatus and optical integrated unit 有权
标题翻译：半导体激光器件光盘设备和光学集成单元
公开(公告)号：US07212556B1
公开(公告)日：2007-05-01
申请号：US09504782
申请日：2000-02-15
申请人： Masahiro Kume , Isao Kidoguchi , Yuzaburo Ban , Ryoko Miyanaga , Masakatsu Suzuki
发明人： Masahiro Kume , Isao Kidoguchi , Yuzaburo Ban , Ryoko Miyanaga , Masakatsu Suzuki
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , B82Y20/00 , G11B7/123 , G11B7/127 , H01L2224/16225 , H01S5/005 , H01S5/0213 , H01S5/02208 , H01S5/02212 , H01S5/0224 , H01S5/02272 , H01S5/02292 , H01S5/0286 , H01S5/0683 , H01S5/1078 , H01S5/2022 , H01S5/2027 , H01S5/22 , H01S5/34333 , H01S2301/02 , H01S2301/173 , H01S2301/176 , H01S2304/04
摘要： A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.
摘要翻译：半导体激光器件包括：第一覆层，其由第一导电类型的氮化物半导体制成并形成在衬底上; 活性层，其由另一个氮化物半导体制成并形成在第一包层上; 以及第二覆层，其由另一种第二导电类型的氮化物半导体制成并形成在有源层上。由第一导电类型的又一个氮化物半导体制成并具有从有源层辐射的吸收自发发射的能隙的自发发射吸收层形成在衬底和第一覆层之间。

6. 发明申请

US20050141579A1 Semiconductor laser and method for fabricating the same 审中-公开
标题翻译：半导体激光器及其制造方法
公开(公告)号：US20050141579A1
公开(公告)日：2005-06-30
申请号：US10980651
申请日：2004-11-04
申请人： Keiji Yamane , Masahiro Kume , Toshiya Kawata , Isao Kidoguchi
发明人： Keiji Yamane , Masahiro Kume , Toshiya Kawata , Isao Kidoguchi
IPC分类号： H01L21/50 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/042 , H01S5/223
CPC分类号： H01S5/0425 , H01S5/0021 , H01S5/02272 , H01S5/2231 , H01S2301/14
摘要： A semiconductor laser includes an n-type semiconductor substrate, an n-type clad layer, an active layer, a p-type first clad layer, a current blocking layer, a p-type second clad layer and a p-type contact layer stacked in this order form the bottom. A p-side ohmic electrode is formed on the p-type contact layer and an n-side ohmic electrode is formed on a back surface of the n-type semiconductor substrate. A stripe is formed in the current blocking layer so as to extend in the optical oscillator direction. In a center portion of the p-type contact layer, a slit is formed so as to extend in the optical oscillator direction and intersect with the stripe with right angles.
摘要翻译：半导体激光器包括n型半导体衬底，n型覆盖层，有源层，p型第一覆盖层，电流阻挡层，p型第二覆盖层和p型接触层堆叠以此顺序形成底部。在p型接触层上形成p侧欧姆电极，在n型半导体衬底的背面上形成n侧欧姆电极。在电流阻挡层中形成条带，以沿光学振荡器方向延伸。在p型接触层的中心部分，形成狭缝，以便在光学振荡器方向上延伸并且与条纹成直角相交。

7. 发明申请

US20050031001A1 Semiconductor laser device, method for fabricating the same, and optical disk apparatus 有权
标题翻译：半导体激光装置及其制造方法以及光盘装置
公开(公告)号：US20050031001A1
公开(公告)日：2005-02-10
申请号：US10943127
申请日：2004-09-17
申请人： Gaku Sugahara , Isao Kidoguchi , Ryoko Miyanaga , Masakatsu Suzuki , Masahiro Kume , Yusaburo Ban , Fukukazu Hirayama
发明人： Gaku Sugahara , Isao Kidoguchi , Ryoko Miyanaga , Masakatsu Suzuki , Masahiro Kume , Yusaburo Ban , Fukukazu Hirayama
IPC分类号： G11B7/125 , H01S5/028 , H01S5/20 , H01S5/223 , H01S5/343 , H01S5/00 , H01S3/08
CPC分类号： B82Y20/00 , G11B7/127 , H01S5/028 , H01S5/2004 , H01S5/2231 , H01S5/34333
摘要： A semiconductor laser device (10) includes a resonant cavity (12) in which a quantum well active layer (11) made up of barrier layers of gallium nitride and well layers of indium gallium nitride is vertically sandwiched between at least light guide layers of n- and p-type aluminum gallium nitride. An end facet reflective film (13) is formed on a reflective end facet (10b) opposite to a light-emitting end facet (10a) in the resonant cavity (12). The end facet reflective film (13) has a structure including a plurality of unit reflective films (130), each of which is made up of a low-refractive-index film (13a) of silicon dioxide and a high-refractive-index film (13b) of niobium oxide. The low-and high-refractive-index films are deposited in this order on the end facet of the resonant cavity (12).
摘要翻译：半导体激光器件（10）包括谐振腔（12），其中由氮化镓的阻挡层和氮化铟镓的阱层构成的量子阱活性层（11）垂直夹在至少导光层n之间和p型氮化镓铝。在谐振腔（12）中的与发光端面（10a）相对的反射端面（10b）上形成端面反射膜（13）。端面反射膜（13）具有包括多个单位反射膜（130）的结构，每个单元反射膜（130）由二氧化硅的低折射率膜（13a）和高折射率膜（13b）的氧化铌。低折射率和高折射率的薄膜依次沉积在谐振腔（12）的端面上。

8. 发明授权

US06466597B1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06466597B1
公开(公告)日：2002-10-15
申请号：US09332163
申请日：1999-06-14
申请人： Masahiro Kume , Yuzaburo Ban , Kenji Harafuji , Isao Kidoguchi , Satoshi Kamiyama , Ayumu Tsujimura , Ryoko Miyanaga , Akihiko Ishibashi , Yoshiaki Hasegawa
发明人： Masahiro Kume , Yuzaburo Ban , Kenji Harafuji , Isao Kidoguchi , Satoshi Kamiyama , Ayumu Tsujimura , Ryoko Miyanaga , Akihiko Ishibashi , Yoshiaki Hasegawa
IPC分类号： G01S500
CPC分类号： B82Y20/00 , H01S5/2009 , H01S5/34333
摘要： A nitride semiconductor laser device includes an n-type contact layer of n-type GaN and an n-type cladding layer of n-type Al0.35Ga0.65N formed on a substrate of sapphire. On the n-type cladding layer, a multiple quantum well active layer of Al0.2Ga0.8N/Al0.25Ga0.75N, a p-type leak barrier layer of p-type Al0.5Ga0.5N0.975P0.025 and a p-type cladding layer of p-type Al0.4Ga0.6N0.98P0.02 are successively formed. The p-type leak barrier layer has a wider energy gap than the n-type cladding layer, and the p-type leak barrier layer and the p-type cladding layer include phosphorus for making an acceptor level shallow with keeping a wide energy gap.
摘要翻译：氮化物半导体激光器件包括形成在蓝宝石衬底上的n型GaN的n型接触层和n型Al0.35Ga0.65N的n型覆层。在n型覆层上，具有Al0.2Ga0.8N / Al0.25Ga0.75N的多量子阱有源层，p型Al0.5Ga0.5N0.975P0.025的p型阻挡层和p型型p型Al0.4Ga0.6N0.98P0.02型包层依次形成。 p型漏电阻层的能隙比n型包覆层宽，p型漏电阻层和p型覆盖层包含磷，以使受主水平浅，保持宽的能隙。

9. 发明授权

US06324200B1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06324200B1
公开(公告)日：2001-11-27
申请号：US09294336
申请日：1999-04-20
申请人： Satoshi Kamiyama , Masahiro Kume , Ryoko Miyanaga , Isao Kidoguchi , Yuzaburo Ban , Ayumu Tsujimura , Yoshiaki Hasegawa , Akihiko Ishibashi
发明人： Satoshi Kamiyama , Masahiro Kume , Ryoko Miyanaga , Isao Kidoguchi , Yuzaburo Ban , Ayumu Tsujimura , Yoshiaki Hasegawa , Akihiko Ishibashi
IPC分类号： H01S319
CPC分类号： B82Y20/00 , H01S5/3054 , H01S5/3063 , H01S5/343 , H01S5/34333
摘要： A GaN buffer layer and an Si-doped n-type GaN contact layer are formed in this order on a sapphire substrate. An n-type Al0.3Ga0.7N cladding layer, an n-type Al0.25Ga0.75N optical guide layer, a multi-quantum well active layer, in which Al0.2Ga0.8N well layers and Al0.25Ga0.75N barrier layers are alternately stacked, an Mg-doped p-type Al0.25Ga0.75N optical guide layer, a p-type Al0.4Ga0.6N0.98P0.02 cladding layer and a p-type GaN contact layer are stacked in this order on an active region on the upper surface of the n-type contact layer.
摘要翻译：在蓝宝石衬底上依次形成GaN缓冲层和Si掺杂n型GaN接触层。 n型Al0.3Ga0.7N覆层，n型Al0.25Ga0.75N光导层，多量子阱有源层，其中Al0.2Ga0.8N阱层和Al0.25Ga0.75N势垒层交替堆叠，将Mg掺杂的p型Al0.25Ga0.75N光导层，p型Al0.4Ga0.6N0.98P0.02包覆层和p型GaN接触层依次层叠在在n型接触层的上表面上的有源区。

10. 发明申请

US20060239311A1 Semiconductor laser device, optical disk apparatus and optical integrated unit 有权
公开(公告)号：US20060239311A1
公开(公告)日：2006-10-26
申请号：US11447951
申请日：2006-06-07
申请人： Masahiro Kume , Isao Kidoguchi , Yuzaburo Ban , Ryoko Miyanaga , Masakatsu Suzuki
发明人： Masahiro Kume , Isao Kidoguchi , Yuzaburo Ban , Ryoko Miyanaga , Masakatsu Suzuki
IPC分类号： H01S3/13 , H01S5/00 , H01S3/04
CPC分类号： H01S5/32341 , B82Y20/00 , G11B7/123 , G11B7/127 , H01L2224/16225 , H01S5/005 , H01S5/0213 , H01S5/02208 , H01S5/02212 , H01S5/0224 , H01S5/02272 , H01S5/02292 , H01S5/0286 , H01S5/0683 , H01S5/1078 , H01S5/2022 , H01S5/2027 , H01S5/22 , H01S5/34333 , H01S2301/02 , H01S2301/173 , H01S2301/176 , H01S2304/04
摘要： A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.

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