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1. 发明授权

US06874843B2 Vehicle front-end body structure 有权
标题翻译：车辆前端车身结构
公开(公告)号：US06874843B2
公开(公告)日：2005-04-05
申请号：US10640180
申请日：2003-08-13
申请人： Masahiro Awano , Kazufumi Takayanagi , Takanobu Uchida , Yoshinori Yokota , Hiroyuki Kurokawa
发明人： Masahiro Awano , Kazufumi Takayanagi , Takanobu Uchida , Yoshinori Yokota , Hiroyuki Kurokawa
IPC分类号： B62D21/15 , B62D25/08 , B62D25/14
CPC分类号： B62D25/082 , B62D21/152 , B62D25/145
摘要： A vehicle front-end body structure, includes: front side members provided along a left side and a right side of a front portion of a vehicle body, a front deck cross member provided between side walls of the vehicle body, including joint portions for joining the front deck cross member to the side walls; and a connecting member made up of a pipe material including end portions and a middle portion disposed between the end portions. The end portions are joined to the vicinities of the joint portions respectively. The middle portion is joined to the front side members respectively.
摘要翻译：一种车辆前端体结构，包括：沿着车身前部的左侧和右侧设置的前侧构件，设置在车身的侧壁之间的前甲板横梁，包括用于接合的接合部前甲板横梁到侧壁; 以及由包括端部的管材构成的连接构件和设置在端部之间的中间部分。端部分别连接在接合部附近。中间部分分别连接到前侧构件。

2. 发明授权

US5537344A High-speed processing apparatus and method, signal analyzing system, and measurement apparatus and method 失效
标题翻译：高速处理装置及方法，信号分析系统，测量装置及方法
公开(公告)号：US5537344A
公开(公告)日：1996-07-16
申请号：US356250
申请日：1994-12-22
申请人： Nobuyuki Isshiki , Kimie Sannomiya , Takanobu Uchida , Toshiharu Numata
发明人： Nobuyuki Isshiki , Kimie Sannomiya , Takanobu Uchida , Toshiharu Numata
IPC分类号： H03H17/02 , G01R23/16 , G06F17/14 , G06F17/15 , G06F17/10
CPC分类号： G01R23/16 , G06F17/14 , G06F17/15 , G10L25/27
摘要： A convolution of input data S.sub.0 and a Gabor function G.sub..alpha.,.omega. is implemented by a processing unit (20) to obtain a wavelet coefficient T.sub.g (2.sup.0,b) of a 0th stage. The input data S.sub.0 is applied to a low-pass filter (30) and is subjected to Gaussian-type filtering so as to be converted into input data S.sub.1 for a 1st stage. The frequency of the high-frequency components of this input data is halved by this filtering. A convolution of this input data S.sub.1 and a Gabor function G.sub..alpha. /3,2.omega./3 is implemented by a processing unit (21) to obtain a wavelet coefficient T.sub.g (2.sup.1,b) of the 1st stage. In the convolution of the 1st stage, the sampling interval is twice that of the 0th stage. Thenceforth, and in similar fashion, the sampling interval in processing operations of subsequent stages is doubled from one stage to the next. As a result, there is no increase in the amount of processing in each stage and a coefficient T.sub.g (2.sup.j,b) can be obtained with identical precision in each stage.
摘要翻译： PCT No.PCT / JP93 / 00889 Sec。 371日期1994年12月22日第 102（e）日期1994年12月22日PCT Filed 1993年6月29日PCT公布。第WO94 / 00821号公报日期：1994年1月6日。输入数据S0和Gabor函数Gα，ω的卷积由处理单元（20）实现，以获得第0级的小波系数Tg（20，b）。输入数据S0被施加到低通滤波器（30），并进行高斯型滤波，以便转换为第一级的输入数据S1。该输入数据的高频分量的频率通过该滤波减半。通过处理单元（21）实现该输入数据S1和Gabor函数Gα/3,2ω/ 3的卷积，以获得第一级的小波系数Tg（21，b）。在第一阶段的卷积中，采样间隔是第0阶段的两倍。此后，以类似的方式，后续阶段的处理操作中的采样间隔从一个阶段到另一个阶段加倍。结果，每个阶段的处理量没有增加，并且在每个阶段可以以相同的精度获得系数Tg（2j，b）。

3. 发明申请

US20070007245A1 Silicon wafer reclamation method and reclaimed wafer 审中-公开
标题翻译：硅片回收方法和回收晶圆
公开(公告)号：US20070007245A1
公开(公告)日：2007-01-11
申请号：US10571781
申请日：2004-08-24
申请人： Takanobu Uchida , Kazuhide Iijima , Tetsuo Yamazaki , Shinichi Tomaru , Fumiaki Maruyama
发明人： Takanobu Uchida , Kazuhide Iijima , Tetsuo Yamazaki , Shinichi Tomaru , Fumiaki Maruyama
IPC分类号： B44C1/22 , C03C25/68 , C23F1/00
CPC分类号： H01L21/02079 , H01L21/02032 , H01L21/3221
摘要： The present invention is a method for reclaiming a silicon wafer in which a thin film has been formed on its surface, at least, comprising a thin-film removing step for removing the thin film having been formed on the silicon wafer and a mirror-polishing step for mirror-polishing at least one side of the thin-film-removed silicon wafer, wherein, before performing the mirror-polishing step, gettering-site forming treatment for applying damage load to at least one side of the silicon wafer is performed and then the silicon wafer is subjected to heat treatment, thereby impurities inside the silicon wafer are reduced. Thereby, there is provided a method for reclaiming a silicon wafer, in which a thin film such as a metal thin film having been formed on a silicon wafer can be removed, and impurities having diffused inside the wafer can be also reduced, thereby silicon wafers having very little metal contamination can be stably obtained.
摘要翻译：本发明是一种用于回收在其表面上形成薄膜的硅晶片的方法，至少包括用于去除在硅晶片上形成的薄膜的薄膜去除步骤和镜面抛光在进行镜面抛光步骤之前，进行用于对硅晶片的至少一侧施加损伤负荷的吸杂位置形成处理，进行用于对去除薄膜的硅晶片的至少一个侧面进行镜面抛光的步骤，然后对硅晶片进行热处理，从而减小硅晶片内的杂质。因此，提供了一种用于回收硅晶片的方法，其中可以除去已经形成在硅晶片上的诸如金属薄膜的薄膜，并且还可以减少在晶片内扩散的杂质，从而硅晶片可以稳定地获得金属污染很少。

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