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    • 3. 发明授权
    • Vacuum processing apparatus
    • 真空加工设备
    • US07981216B2
    • 2011-07-19
    • US10907023
    • 2005-03-16
    • Keiji IshibashiMasahiko TanakaAkira KumagaiManabu IkemotoKatsuhisa Yuda
    • Keiji IshibashiMasahiko TanakaAkira KumagaiManabu IkemotoKatsuhisa Yuda
    • C23C16/505
    • C23C16/45574C23C16/452C23C16/45565
    • A vacuum processing apparatus, including a reactor and a partitioning plate having a plurality of through-holes through which radicals are allowed to pass and separating the reactor into a plasma generating space and a substrate process space, the process, such as a film deposition process, being carried out on a substrate placed in the substrate process space by delivering a gas into the plasma generating space for generating a plasma, producing radicals with the plasma thus generated, and delivering the radicals through the plurality of through-holes on the partitioning plate into the substrate process space. The partitioning plate includes a partitioning body having a plurality of through-holes and a control plate disposed on the plasma generating space side of the partitioning body and having radical passage holes in the positions corresponding to the plurality of through-holes on the partitioning plate.
    • 一种真空处理装置,包括反应器和具有多个通孔的分隔板,通过该通孔使自由基通过所述通孔并将反应器分离成等离子体产生空间和基板处理空间,所述方法如成膜方法 通过将气体输送到等离子体产生空间中以产生等离子体,在由此产生的等离子体产生自由基的同时在放置在基板处理空间中的基板上进行,并且通过分隔板上的多个通孔输送自由基 进入基板工艺空间。 分隔板包括具有多个通孔的分隔体和设置在分隔体的等离子体产生空间侧的控制板,并且在与分隔板上的多个通孔对应的位置具有自由通过孔。
    • 8. 发明授权
    • Loop antenna and contactless IC card read/write apparatus
    • 环形天线和非接触式IC卡读/写设备
    • US07070101B2
    • 2006-07-04
    • US10885723
    • 2004-07-08
    • Futoshi DeguchiHiroshi YoshinagaMasahiko TanakaHiroaki Haruyama
    • Futoshi DeguchiHiroshi YoshinagaMasahiko TanakaHiroaki Haruyama
    • G06K7/08
    • G06K7/10336G06K7/10316
    • To provide a loop antenna capable of attenuating the distant electric field with the attenuation of the magnetic flux in the vicinity of an electromagnetic wave restrained, and a contactless IC card read/write apparatus.A loop antenna 10 has an electromagnetic wave shield 1 over at least one side of the loop antenna, the electromagnetic wave shield 1 comprising a plurality of electric conductors 2, a ground contact 3 for grounding the plurality of electric conductors and a lead wire 4 for connecting the plurality of electric conductors 2 to the ground contact 3. The plurality of electric conductors 2 are electrically connected via the lead wire 4 to the ground contact 3 and the plurality of electric conductors 2 are arranged so that the paths of the respective electric conductors 2 from any of their given points to the ground contact 3 via the lead wire 4 are determined uniformly.
    • 提供能够衰减受限制的电磁波附近的磁通的衰减的远距离电场的环形天线,以及非接触式IC卡读写装置。 环形天线10在环形天线的至少一侧具有电磁波屏蔽1,电磁波屏蔽1包括多个电导体2,用于使多个电导体接地的接地触头3和用于 将多个电导体2连接到接地触点3.多个电导体2经由引线4电连接到接地触点3,并且多个电导体2被布置成使得各个导体 均匀地确定了从它们给定的点到任何一个通过引线4到达接地触头3的2。
    • 9. 发明申请
    • Chemical vapor deposition apparatus and film deposition method
    • 化学气相沉积装置和薄膜沉积方法
    • US20050170090A1
    • 2005-08-04
    • US11047725
    • 2005-02-02
    • Masahiko Tanaka
    • Masahiko Tanaka
    • H01L21/205C23C16/00C23C16/455C23C16/458H01L21/285
    • C23C16/4583C23C16/45504C23C16/45521
    • A chemical vapor deposition apparatus has a vacuum processing chamber, a susceptor for holding a plurality of substrates each placed with a film deposition surface thereof facing downward; a heater disposed above the susceptor; a first barrier gas supply port for supplying a barrier gas to the upper surface of the susceptor; and a second barrier gas supply port for supplying the barrier gas to the upper surface of the heater. The barrier gas supplied from the first barrier gas supply port and the barrier gas supplied from the second barrier gas supply port have their flow rates controlled independently. By properly setting the ratio between the amount of the barrier gas supplied from the first barrier gas supply port and the amount of the barrier gas supplied from the second barrier gas supply port and the ratio between the amount of the barrier gas supplied and the amount of a raw material gas supplied, it becomes possible to form a film which is reduced in the number of particles adhered thereto.
    • 化学气相沉积装置具有真空处理室,用于保持多个基板的基座,每个基板的薄膜沉积表面面向下放置; 设置在基座上方的加热器; 用于向所述基座的上表面供给阻挡气体的第一阻挡气体供给口; 以及用于将阻挡气体供给到加热器的上表面的第二阻挡气体供给口。 从第一势垒气体供给口供给的阻挡气体和从第二势垒气体供给口供给的势垒气体,其流量独立地被控制。 通过适当地设定从第一势垒气体供给口供给的阻挡气体的量与从第二阻挡气体供给口供给的阻挡气体的量之间的比例与供给的阻隔气体的量之间的比例, 提供原料气体,可以形成减少附着于其上的颗粒数量的膜。