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1. 发明授权

US5812520A Optical disk unit, control method thereof, optical information recording medium and recording-regenerating method using this optical information recording medium 失效
公开(公告)号：US5812520A
公开(公告)日：1998-09-22
申请号：US939677
申请日：1997-09-29
申请人： Masahiko Nakayama , Hiroshi Koide , Akihiko Shimizu
发明人： Masahiko Nakayama , Hiroshi Koide , Akihiko Shimizu
IPC分类号： G11B7/007 , G11B7/013 , G11B7/085 , G11B7/09 , G11B7/26 , G11B3/70 , G11B7/00
CPC分类号： G11B7/08505 , G11B7/00718 , G11B7/00745 , G11B7/24085 , G11B7/261 , G11B7/0901 , G11B7/0938 , G11B7/0943
摘要： In a control method of an optical disk unit, it is judged by performing a tentative tracking operation of an optical pickup in a constant region of an optical disk whether a tracking position of the optical pickup is located in a land or groove portion. After a correct tracking control condition is judged, an access operation according to command information is executed. The optical disk unit has a two-divisional light receiving element for receiving diffracted light caused by a pregroove and a prepit of the optical disk, and a differentiator for generating a difference signal between signals of this light receiving element. The optical disk unit further has an adder for generating a sum signal of the signals of the light receiving element, and a tracking signal selector for selecting the difference or sum signal when the tracking operation is performed in a pregroove or prepit region, respectively. An optical information recording medium and a method for recording and regenerating information by using this optical information recording medium are also shown.

2. 发明授权

US5822286A Optical disk unit, control method thereof, optical information recording medium and recording-regenerating method using this optical information recording medium 失效
标题翻译：光盘单元，其控制方法，光信息记录介质和使用该光信息记录介质的记录再生方法
公开(公告)号：US5822286A
公开(公告)日：1998-10-13
申请号：US940102
申请日：1997-09-29
申请人： Masahiko Nakayama , Hiroshi Koide , Akihiko Shimizu
发明人： Masahiko Nakayama , Hiroshi Koide , Akihiko Shimizu
IPC分类号： G11B7/007 , G11B7/013 , G11B7/085 , G11B7/09 , G11B7/26 , G11B7/00
CPC分类号： G11B7/08505 , G11B7/00718 , G11B7/00745 , G11B7/24085 , G11B7/261 , G11B7/0901 , G11B7/0938 , G11B7/0943
摘要： In a control method of an optical disk unit, it is judged by performing a tentative tracking operation of an optical pickup in a constant region of an optical disk whether a tracking position of the optical pickup is located in a land or groove portion. After a correct tracking control condition is judged, an access operation according to command information is executed. The optical disk unit has a two-divisional light receiving element for receiving diffracted light caused by a pregroove and a prepit of the optical disk, and a differentiator for generating a difference signal between signals of this light receiving element. The optical disk unit further has an adder for generating a sum signal of the signals of the light receiving element, and a tracking signal selector for selecting the difference or sum signal when the tracking operation is performed in a pregroove or prepit region, respectively. An optical information recording medium and a method for recording and regenerating information by using this optical information recording medium are also shown.
摘要翻译：在光盘单元的控制方法中，通过在光盘的恒定区域中执行光学拾取器的暂时跟踪操作来判断光学拾取器的跟踪位置是否位于平台或凹槽部分中。在判断出正确的跟踪控制条件之后，执行根据命令信息的访问操作。光盘单元具有用于接收由光盘的预槽和预凹坑引起的衍射光的二分光接收元件，以及用于在该光接收元件的信号之间产生差分信号的微分器。光盘单元还具有用于产生光接收元件的信号的和信号的加法器和用于在分别在预凹槽或预凹坑区域中执行跟踪操作时选择差值或和信号的跟踪信号选择器。还示出了光信息记录介质和通过使用该光信息记录介质来记录和再生信息的方法。

3. 发明授权

US5638354A Optical information recording medium 失效
标题翻译：光信息记录介质
公开(公告)号：US5638354A
公开(公告)日：1997-06-10
申请号：US276518
申请日：1994-07-15
申请人： Masahiko Nakayama , Hiroshi Koide , Akihiko Shimizu
发明人： Masahiko Nakayama , Hiroshi Koide , Akihiko Shimizu
IPC分类号： G11B7/007 , G11B7/013 , G11B7/085 , G11B7/09 , G11B7/26 , G11B7/00 , G11B7/24
CPC分类号： G11B7/08505 , G11B7/00718 , G11B7/00745 , G11B7/24085 , G11B7/261 , G11B7/0901 , G11B7/0938 , G11B7/0943
摘要： In a control method of an optical disk unit, it is judged by performing a tentative tracking operation of an optical pickup in a constant region of an optical disk whether a tracking position of the optical pickup is located in a land or groove portion. After a correct tracking control condition is judged, an access operation according to command information is executed. The optical disk unit has a two-divisional light receiving element for receiving diffracted light caused by a pregroove and a prepit of the optical disk, and a differentiator for generating a difference signal between signals of this light receiving element. The optical disk unit further has an adder for generating a sum signal of the signals of the light receiving element, and a tracking signal selector for selecting the difference or sum signal when the tracking operation is performed in a pregroove or prepit region, respectively. An optical information recording medium and a method for recording and regenerating information by using this optical information recording medium are also shown.
摘要翻译：在光盘单元的控制方法中，通过在光盘的恒定区域中执行光学拾取器的暂时跟踪操作来判断光学拾取器的跟踪位置是否位于平台或凹槽部分中。在判断出正确的跟踪控制条件之后，执行根据命令信息的访问操作。光盘单元具有用于接收由光盘的预槽和预凹坑引起的衍射光的二分光接收元件，以及用于在该光接收元件的信号之间产生差分信号的微分器。光盘单元还具有用于产生光接收元件的信号的和信号的加法器和用于在分别在预凹槽或预凹坑区域中执行跟踪操作时选择差值或和信号的跟踪信号选择器。还示出了光信息记录介质和通过使用该光信息记录介质来记录和再生信息的方法。

4. 发明授权

US08958239B2 Magnetic memory element, magnetic memory device, spin transistor, and integrated circuit 有权
标题翻译：磁存储元件，磁存储器件，自旋晶体管和集成电路
公开(公告)号：US08958239B2
公开(公告)日：2015-02-17
申请号：US13532981
申请日：2012-06-26
申请人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
发明人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
IPC分类号： G11C11/00 , G11C11/16 , H01L29/66 , H01L43/08 , H01L27/22 , H01L29/06
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/224 , H01L29/0657 , H01L29/66984 , H01L43/08
摘要： One embodiment provides a magnetic memory element, including: a first ferromagnetic layer whose magnetization is variable; a second ferromagnetic layer which has a first band split into a valence band and a conduction band and a second band being continuous at least from the valence band to the conduction band; and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer.
摘要翻译：一个实施例提供了一种磁存储元件，包括：其磁化可变的第一铁磁层; 第二铁磁层，其具有分裂成价带的第一带和导带，以及至少从价带至导带连续的第二带; 以及设置在第一铁磁层和第二铁磁层之间的非磁性层。

5. 发明授权

US08878321B2 Magnetoresistive element and producing method thereof 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US08878321B2
公开(公告)日：2014-11-04
申请号：US13618410
申请日：2012-09-14
申请人： Hisanori Aikawa , Hiroaki Yoda , Masahiko Nakayama , Tatsuya Kishi , Sumio Ikegawa
发明人： Hisanori Aikawa , Hiroaki Yoda , Masahiko Nakayama , Tatsuya Kishi , Sumio Ikegawa
IPC分类号： H01L29/82 , H01L21/8246 , H01L43/08 , H01L43/12 , H01L27/22
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer, in which a magnetization direction is variable and is perpendicular to a film surface, a tunnel barrier layer that is formed on the first magnetic layer, and a second magnetic layer that is formed on the tunnel barrier layer, a magnetization direction of the second magnetic layer being variable and being perpendicular to the film surface. The second magnetic layer comprises a body layer that constitutes an origin of perpendicular magnetic anisotropy, and an interface layer that is formed between the body layer and the tunnel barrier layer. The interface layer has a permeability higher than that of the body layer and a planar size larger than that of the body layer.
摘要翻译：根据一个实施例，磁阻元件包括其中磁化方向可变并且垂直于膜表面的第一磁性层，形成在第一磁性层上的隧道势垒层和形成的第二磁性层在隧道势垒层上，第二磁性层的磁化方向是可变的并垂直于膜表面。第二磁性层包括构成垂直磁各向异性的原点的主体层以及形成在主体层与隧道势垒层之间的界面层。界面层的透过率比体层高，平面尺寸比体层大。

6. 发明授权

US08665639B2 Magnetoresistive element and magnetic memory 有权
标题翻译：磁阻元件和磁记忆体
公开(公告)号：US08665639B2
公开(公告)日：2014-03-04
申请号：US13407039
申请日：2012-02-28
申请人： Toshihiko Nagase , Tadashi Kai , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Masahiko Nakayama , Makoto Nagamine , Shigeto Fukatsu , Masatoshi Yoshikawa , Hiroaki Yoda
发明人： Toshihiko Nagase , Tadashi Kai , Katsuya Nishiyama , Eiji Kitagawa , Tadaomi Daibou , Masahiko Nakayama , Makoto Nagamine , Shigeto Fukatsu , Masatoshi Yoshikawa , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/228 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes a first magnetic layer with a perpendicular and variable magnetization, a second magnetic layer with a perpendicular and invariable magnetization, and a first nonmagnetic layer between the first and second magnetic layer. The first magnetic layer has a laminated structure of first and second ferromagnetic materials. A magnetization direction of the first magnetic layer is changed by a current which pass through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer. A perpendicular magnetic anisotropy of the second ferromagnetic material is smaller than that of the first ferromagnetic material. A film thickness of the first ferromagnetic material is thinner than that of the second ferromagnetic material.
摘要翻译：根据一个实施例，磁阻元件包括具有垂直和可变磁化的第一磁性层，具有垂直和不变磁化的第二磁性层以及第一和第二磁性层之间的第一非磁性层。第一磁性层具有第一和第二铁磁材料的叠层结构。第一磁性层的磁化方向由穿过第一磁性层，第一非磁性层和第二磁性层的电流改变。第二铁磁材料的垂直磁各向异性小于第一铁磁材料的垂直磁各向异性。第一铁磁材料的膜厚比第二铁磁材料薄。

7. 发明授权

US08531875B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US08531875B2
公开(公告)日：2013-09-10
申请号：US13426139
申请日：2012-03-21
申请人： Satoshi Yanagi , Eiji Kitagawa , Masahiko Nakayama , Jyunichi Ozeki , Hisanori Aikawa , Naoharu Shimomura , Masatoshi Yoshikawa , Minoru Amano , Shigeki Takahashi , Hiroaki Yoda
发明人： Satoshi Yanagi , Eiji Kitagawa , Masahiko Nakayama , Jyunichi Ozeki , Hisanori Aikawa , Naoharu Shimomura , Masatoshi Yoshikawa , Minoru Amano , Shigeki Takahashi , Hiroaki Yoda
IPC分类号： H01L29/82 , G11C11/15
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3286 , H01L43/08
摘要： According to one embodiment, a magnetic memory includes at least one memory cell including a magnetoresistive element, and first and second electrodes. The element includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a third magnetic layer provided on the second magnetic layer and having a magnetization antiparallel to the magnetization direction of the second magnetic layer. A diameter of an upper surface of the first magnetic layer is smaller than that of a lower surface of the tunnel barrier layer. A diameter of a lower surface of the second magnetic layer is not more than that of an upper surface of the tunnel barrier layer.
摘要翻译：根据一个实施例，磁存储器包括至少一个包括磁阻元件的存储单元以及第一和第二电极。元件包括第一磁性层，隧道势垒层，第二磁性层和设置在第二磁性层上并且具有与第二磁性层的磁化方向反平行的磁化的第三磁性层。第一磁性层的上表面的直径小于隧道势垒层的下表面的直径。第二磁性层的下表面的直径不大于隧道势垒层的上表面的直径。

8. 发明授权

US08530987B2 Magnetic memory including a magnetoresistive element 有权
标题翻译：磁存储器包括磁阻元件
公开(公告)号：US08530987B2
公开(公告)日：2013-09-10
申请号：US13432486
申请日：2012-03-28
申请人： Hisanori Aikawa , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Naoharu Shimomura , Eiji Kitagawa , Tatsuya Kishi , Jyunichi Ozeki , Hiroaki Yoda , Satoshi Yanagi
发明人： Hisanori Aikawa , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Naoharu Shimomura , Eiji Kitagawa , Tatsuya Kishi , Jyunichi Ozeki , Hiroaki Yoda , Satoshi Yanagi
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228
摘要： A magnetic memory includes a magnetoresistive element. The magnetoresistive element includes a reference layer having an invariable magnetization direction, a storage layer having a variable magnetization direction, and a spacer layer provided between the reference layer and the storage layer. The storage layer has a multilayered structure including first and second magnetic layers, the second magnetic layer is provided between the first magnetic layer and the spacer layer and has a magnetic anisotropy energy lower than that of the first magnetic layer, and an exchange coupling constant Jex between the first magnetic layer and the second magnetic layer is not more than 5 erg/cm2.
摘要翻译：磁存储器包括磁阻元件。磁阻元件包括具有不变磁化方向的参考层，具有可变磁化方向的存储层和设置在参考层和存储层之间的间隔层。存储层具有包括第一和第二磁性层的多层结构，第二磁性层设置在第一磁性层和间隔层之间，其磁各向异性能量低于第一磁性层的磁各向异性能，交换耦合常数Jex 第一磁性层和第二磁性层之间的距离不大于5erg / cm2。

9. 发明申请

US20130099338A1 MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY 审中-公开
标题翻译：磁记忆元件和磁记忆
公开(公告)号：US20130099338A1
公开(公告)日：2013-04-25
申请号：US13604537
申请日：2012-09-05
申请人： Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Hisanori Aikawa , Masaru Toko
发明人： Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Hisanori Aikawa , Masaru Toko
IPC分类号： H01L29/82
CPC分类号： H01S5/065 , G01B9/02091 , G11C11/161 , H01F10/3254 , H01F10/3286 , H01F41/303 , H01L27/228 , H01L43/08 , H01L43/10 , H01S5/50
摘要： According to one embodiment, a magnetic memory element includes a memory layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a first nonmagnetic layer provided on the memory layer, and a reference layer provided on the first nonmagnetic layer, having magnetic anisotropy perpendicular to a film surface, and having an invariable magnetization direction. An area of the memory layer is larger than that of the reference layer. Magnetization in an end portion of the memory layer is smaller than that in a central portion of the memory layer.
摘要翻译：根据一个实施例，磁存储元件包括具有垂直于膜表面并具有可变磁化方向的磁各向异性的存储层，设置在存储层上的第一非磁性层和设置在第一非磁性层上的参考层，具有垂直于膜表面的磁各向异性，并且具有不变的磁化方向。存储层的面积大于参考层的面积。存储层的端部的磁化小于存储层的中央部的磁化。

10. 发明申请

US20130077388A1 MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, SPIN TRANSISTOR, AND INTEGRATED CIRCUIT 有权
标题翻译：磁记忆元件，磁记忆体装置，旋转晶体管和集成电路
公开(公告)号：US20130077388A1
公开(公告)日：2013-03-28
申请号：US13532981
申请日：2012-06-26
申请人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
发明人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/224 , H01L29/0657 , H01L29/66984 , H01L43/08
摘要： One embodiment provides a magnetic memory element, including: a first ferromagnetic layer whose magnetization is variable; a second ferromagnetic layer which has a first band split into a valence band and a conduction band and a second band being continuous at least from the valence band to the conduction band; and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer.
摘要翻译：一个实施例提供了一种磁存储元件，包括：其磁化可变的第一铁磁层; 第二铁磁层，其具有分裂成价带的第一带和导带，以及至少从价带至导带连续的第二带; 以及设置在第一铁磁层和第二铁磁层之间的非磁性层。

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